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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N6661 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 500mA | ISOLATED | SILICON | 225V | DO-35 | RECTIFIER DIODE | 0.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3768 | GeneSiC Semiconductor | $9.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3768 | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 35A | 1 | 1000V | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N3765R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3765r-datasheets-9282.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3765R | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 700V | 700V | Standard, Reverse Polarity | 700V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N1189R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n1189r-datasheets-9283.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1189R | 190°C | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 500V | 500V | Standard, Reverse Polarity | 600V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| APT100DL60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt100dl60bg-datasheets-6142.pdf | TO-247-2 | 2 | 24 Weeks | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 2 weeks ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | Common Cathode | 1 | R-PSFM-T2 | 100A | 1.6V | ULTRA SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600A | Standard | 600V | 100A | 1 | 0.487μs | 1.6V @ 100A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N3767 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3767-datasheets-9284.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3767 | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 900V | 900V | Standard | 900V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N3595A-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AH, DO-35, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | MIL-19500/241 | NO | WIRE | 2 | 175°C | 1 | Rectifier Diodes | Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 125V | 3μs | Standard | 4A | 0.15A | 125V | 2nA @ 125V | 920mV @ 100mA | 150mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N1189 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n1189-datasheets-9285.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N1189 | DO-5 | 35A | 595A | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 500V | 500V | Standard | 600V | 35A | 600V | 10μA @ 50V | 1.2V @ 35A | 35A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5187 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 7 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | Standard | 200V | 2μA @ 200V | 1.5V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6858-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 150°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | Single | 1 | 75mA | ISOLATED | SILICON | 70V | DO-35 | RECTIFIER DIODE | 0.075A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3212R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3212R | 175°C | 1 | O-MUPM-D1 | 15A | 297A | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 15A | 1 | 10μA @ 50V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6642 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 500nA | 100V | 2.5A | 5 ns | Standard | 0.3A | 5pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| 1N5195UR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5195ur-datasheets-6116.pdf | DO-213AA (Glass) | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 180V | 2A | Standard | 180V | 200mA | 25nA @ 180V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5819-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | Single | 1 | 1A | 850mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1nA | 40V | 50A | Schottky | 45V | 1A | 1A | 70pF @ 5V 1MHz | 50μA @ 45V | 340mV @ 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||
| VS-1N1183RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1183 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 50V | 800A | 50V | Standard, Reverse Polarity | 50V | 40A | 1 | 2.5mA @ 50V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||
| JANTX1N5550 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 200V | 5A | 1 | 5A | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N5196 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5196-datasheets-6121.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 225V | 2A | Standard | 225V | 200mA | 0.1A | 25nA @ 225V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-95PF140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | Standard | 1.4kV | 95A | 1800A | 1 | 1400V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6638US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125V | 2.5A | 20ns | Standard | 0.3A | 2.5pF @ 0V 1MHz | 150V | 500nA @ 150V | 1.1V @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| IDW20G65C5BXKSA2 | Infineon Technologies | $8.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idw20g65c5bxksa1-datasheets-4452.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | PD-CASE | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 130W | 650V | 180μA | 0ns | Silicon Carbide Schottky | 46A | 1 | 300pF @ 1V 1MHz | 650V | 180μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60HFU-200 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 21 Weeks | 60HFU | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3765 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n3765-datasheets-9268.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3765 | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 700V | 700V | Standard | 700V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR40S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.95V | 420A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 420A | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 40A | 500A | 1 | 100μA @ 400V | 1.95V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| 1N1183 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n1183-datasheets-9270.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N1183 | DO-203AB | 35A | 595A | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 50V | 50V | Standard | 50V | 35A | 50V | 10μA @ 50V | 1.2V @ 35A | 35A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5195 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5195-datasheets-6129.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 180V | 2A | Standard | 180V | 200mA | 25nA @ 180V | 1V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N5186 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 7 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 100V | 2μA @ 100V | 1.5V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6642 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | 2 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | AXIAL | WIRE | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | O-LALF-W2 | SINGLE | ISOLATED | SILICON | 75V | RECTIFIER DIODE | 0.3A | 0.005μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5190 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 3A | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 2μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| FFSP20120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp20120a-datasheets-6086.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY, PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | 175°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | No Recovery Time > 500mA (Io) | 340W | 135A | 1.2kV | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1.2kV | 20A | 1 | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 1.75V @ 20A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N6638U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125V | 20ns | Standard | 0.3A | 2.5pF @ 0V 1MHz | 150V | 500nA @ 150V | 1.1V @ 200mA | -65°C~175°C |
