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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-80APF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs80apf02m3-datasheets-6175.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 190 ns | Standard | 200V | 80A | 1000A | 1 | 200V | 100μA @ 200V | 1.25V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| S40K | GeneSiC Semiconductor | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40k-datasheets-9315.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard | 800V | 40A | 1 | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| JAN1N5806US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 2.5A | 1 | 25pF @ 10V 1MHz | 1μA @ 150V | 975mV @ 2.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| S40QR | GeneSiC Semiconductor | $9.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.1V | 595A | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 40A | 1 | 1200V | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | |||||||||||||||||||||||||||||||
| S40VR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40vr-datasheets-9320.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.4kV | 1.4kV | Standard, Reverse Polarity | 1.4kV | 40A | 1 | 1400V | 10μA @ 100V | 1.1V @ 40A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||
| 1N1184AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n1184ar-datasheets-9304.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1184AR | 200°C | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| S40GR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40gr-datasheets-9305.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 40A | 1 | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| JAN1N5811 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 150V | 125A | 30 ns | Standard | 150V | 6A | 1 | 6A | 60pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||
| 1N5621US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 300 ns | Standard | 800V | 1A | 1A | 20pF @ 12V 1MHz | 500nA @ 800V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||
| 1N5194 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5194-datasheets-6152.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | 200mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 70V | 2A | Standard | 70V | 200mA | 0.1A | 25nA @ 70V | 1V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| JANTX1N5804 | Microsemi Corporation | $9.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 35A | 25 ns | Standard | 100V | 1A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 100V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||
| JAN1N3595UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/241 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | DO-213AA | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 150mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 1nA | 125V | 4A | 3 μs | Standard | 0.15A | 1nA @ 125V | 920mV @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JAN1N6639 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75V | 4ns | Standard | 0.3A | 100nA @ 75V | 1.2V @ 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTX1N4247 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 5 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||
| 1N3766R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n3766r-datasheets-9295.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3766R | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||
| VS-71HFR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 15mA | 100V | Standard, Reverse Polarity | 100V | 70A | 100V | 15mA @ 100V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 40A | 420A | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 600V | 420A | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 40A | 1 | 100μA @ 600V | 1.95V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||
| 1N1187R | GeneSiC Semiconductor | $40.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n1187r-datasheets-9299.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1187R | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 300V | 300V | Standard, Reverse Polarity | 300V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||
| 120SPC060A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4800pF @ 5V 1MHz | 60V | 11mA @ 60V | 600mV @ 120A | 120A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1186R | GeneSiC Semiconductor | $51.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1186R | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||
| S40D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40d-datasheets-9303.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard | 200V | 40A | 1 | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||
| 1N1190R | GeneSiC Semiconductor | $9.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1190R | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard, Reverse Polarity | 600V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| CDLL5819/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AA | 2 | No | Single | DO-213AA | 1A | 900mV | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 40V | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5416 | Microsemi Corporation | $9.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 1 | 3A | 1μA @ 100V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||
| 1N1190 | GeneSiC Semiconductor | $40.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1190 | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard | 600V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| 1N1188 | GeneSiC Semiconductor | $20.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | 1N1188 | DO-5 | 35A | 595A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 400V | Standard | 400V | 35A | 400V | 10μA @ 50V | 1.2V @ 35A | 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6661 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 500mA | ISOLATED | SILICON | 225V | DO-35 | RECTIFIER DIODE | 0.5A | ||||||||||||||||||||||||||||||||||||||||||||
| 1N3768 | GeneSiC Semiconductor | $9.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N3768 | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 35A | 1 | 1000V | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||
| 1N3765R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3765r-datasheets-9282.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3765R | 190°C | 1 | O-MUPM-D1 | 35A | 475A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 700V | 700V | Standard, Reverse Polarity | 700V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||
| 1N1189R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n1189r-datasheets-9283.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1189R | 190°C | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 500V | 500V | Standard, Reverse Polarity | 600V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C |
