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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JAN1N5621 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | DO-7 | 300 ns | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| FFSB20120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ffsb20120a-datasheets-6109.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | PD-CASE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON CARBIDE | 333W | 1200V | 200μA | 1200V | Schottky | 135A | 1 | 32A | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 1.75V @ 20A | 32A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3211 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3211-datasheets-9254.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3211 | DO-5 | 15A | 297A | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 300V | 300V | Standard | 300V | 15A | 300V | 10μA @ 50V | 1.5V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-42HFR120 | Vishay Semiconductor Diodes Division | $6.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 40A | 1 | 1200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HF80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 40A | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 595A | 800V | Standard | 800V | 40A | 1 | 9mA @ 800V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5809 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 100V | 125A | 30 ns | Standard | 100V | 6A | 1 | 6A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| 1N6642 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | 2 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | AXIAL | WIRE | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | O-LALF-W2 | SINGLE | ISOLATED | SILICON | 75V | RECTIFIER DIODE | 0.3A | 0.005μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5190 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 3A | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 2μA @ 600V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| FFSP20120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp20120a-datasheets-6086.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY, PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | 175°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | No Recovery Time > 500mA (Io) | 340W | 135A | 1.2kV | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1.2kV | 20A | 1 | 1220pF @ 1V 100KHz | 1200V | 200μA @ 1200V | 1.75V @ 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6638U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125V | 20ns | Standard | 0.3A | 2.5pF @ 0V 1MHz | 150V | 500nA @ 150V | 1.1V @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6620 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | 30 ns | Standard | 220V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| DH60-16A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/ixys-dh6016a-datasheets-6102.pdf | TO-247-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | 415W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 2.57V | 700A | 2mA | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700A | 230 ns | 230 ns | Standard | 1.6kV | 60A | 650A | 1 | 64A | 32pF @ 1200V 1MHz | 1600V | 200μA @ 1400V | 2.04V @ 60A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| JAN1N5804 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jan1n5804-datasheets-9249.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Rectifier Diodes | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3W | 1μA | 100V | 35A | 25 ns | Standard | 100V | 2.5A | 1 | 25pF @ 10V 1MHz | 1μA @ 100V | 975mV @ 2.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 126SPC200A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1800pF @ 5V 1MHz | 200V | 2.1mA @ 200V | 950mV @ 120A | 120A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5551 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 400V | 5A | 1 | 5A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| APT60D100SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60d100bg-datasheets-1144.pdf | 1kV | 60A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | Pure Matte Tin (Sn) | GULL WING | 245 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 60A | 60A | 2.5V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1kV | 540A | 280 ns | Standard | 1kV | 60A | 1 | 1000V | 250μA @ 1000V | 2.5V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-41HF10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 100V | Standard | 100V | 40A | 1 | 9mA @ 100V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80PFR160W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr140w-datasheets-5654.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-MUPM-W1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4500μA | Standard, Reverse Polarity | 1.6kV | 80A | 1250A | 1 | 1600V | 1.46V @ 220A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL5817 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll5817-datasheets-6079.pdf | DO-213AB, MELF | 2 | 10 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 1A | 900mV | ISOLATED | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 1A | 1A | 100μA @ 20V | 600mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FL100S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | 2 | Single | DO-203AA | 12A | 1.4V | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 180A | 1kV | 500 ns | 500 ns | Standard | 1kV | 12A | 1000V | 50μA @ 1000V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6638US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6643us-datasheets-0665.pdf | MELF | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 300mA | 1.1V | ISOLATED | SILICON | 500nA | 125V | 2.5A | 4.5 ns | RECTIFIER DIODE | 0.3A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 120SPC045A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4800pF @ 5V 1MHz | 45V | 900μA @ 45V | 600mV @ 120A | 120A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 129SPC150A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3000pF @ 5V 1MHz | 150V | 3mA @ 150V | 870mV @ 120A | 120A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3211R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3211R | 175°C | 1 | O-MUPM-D1 | 15A | 297A | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 300V | 300V | Standard, Reverse Polarity | 300V | 15A | 1 | 10μA @ 50V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5415 | Microsemi Corporation | $8.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-95PF160W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | 1.8kA | Standard | 1.6kV | 95A | 1 | 1600V | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 100V | Standard, Reverse Polarity | 100V | 40A | 1 | 9mA @ 100V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6641 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | 2 | 6 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Not Qualified | 300mA | ISOLATED | SILICON | 50V | 0.1μA | DO-35 | 1.1V | RECTIFIER DIODE | 0.3A | 0.005μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-97PF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard | 1.2kV | 95A | 2090A | 1 | 1200V | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 122SPC030A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 6600pF @ 5V 1MHz | 30V | 12mA @ 30V | 530mV @ 120A | 120A | -55°C~150°C |
