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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6638US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6643us-datasheets-0665.pdf | MELF | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 300mA | 1.1V | ISOLATED | SILICON | 500nA | 125V | 2.5A | 4.5 ns | RECTIFIER DIODE | 0.3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5615US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 45pF @ 12V 1MHz | 200V | 500nA @ 200V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3209 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3209-datasheets-9208.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3209 | DO-5 | 15A | 297A | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 100V | 100V | Standard | 100V | 15A | 100V | 10μA @ 50V | 1.5V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5621 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | 1.6V | Fast Recovery =< 500ns, > 200mA (Io) | 500nA | 800V | 30A | 150 ns | Standard | 800V | 1A | 20pF @ 12V 1MHz | 800V | 500nA @ 800V | 1.6V @ 3A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5614 | Microsemi Corporation | $6.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| 1N3209R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | /files/genesicsemiconductor-1n3209r-datasheets-9211.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3209R | 175°C | 1 | O-MUPM-D1 | 15A | 297A | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 15A | 1 | 10μA @ 50V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3957 | Microsemi Corporation | $9.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | ISOLATED | 38 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 30A | Standard | 1kV | 1A | 1A | 1000V | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N3212 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3212-datasheets-9213.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3212 | DO-5 | 15A | 297A | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 400V | Standard | 400V | 15A | 400V | 10μA @ 50V | 1.5V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4249 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 2 | Single | Qualified | 1.3V | Standard Recovery >500ns, > 200mA (Io) | 1μA | 1kV | 25A | 5 μs | Standard | 1kV | 1A | 1000V | 1μA @ 1000V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DH60-14A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/ixys-dh6014a-datasheets-6055.pdf | TO-247-2 | Lead Free | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | 415W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 2.57V | 700A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 1.4kV | 700A | TO-247AD | 230 ns | 230 ns | Standard | 1.4kV | 60A | 650A | 1 | 64A | 32pF @ 1200V 1MHz | 1400V | 200μA @ 1200V | 2.04V @ 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-41HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | Standard, Reverse Polarity | 200V | 40A | 1 | 9mA @ 200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSDI60-14A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsdi6018a-datasheets-5777.pdf | TO-247-2 | Lead Free | 2 | 20 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE, SNUBBER DIODE | unknown | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | Rectifier Diodes | Not Qualified | 4.1V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 1.4kV | 540A | 1.4kV | 300 ns | 40 ns | Standard | 1.4kV | 63A | 500A | 1 | 1400V | 2mA @ 1400V | 4.1V @ 70A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2131A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 36.9062mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N2131 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 60A | 1.3V | 900A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 900A | 10mA | 200V | 900A | 200V | Standard | 200V | 60A | 1 | 10mA @ 200V | 1.3V @ 188A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N4944 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 15A | 150 ns | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| IDC05S120C5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | Die | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D10120E-TR | Cree/Wolfspeed | $6.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 754pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 10A | 33A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6643 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 75V | 6ns | Standard | 0.3A | 5pF @ 0V 1MHz | 50V | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N3213 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3213-datasheets-9226.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3213 | DO-5 | 15A | 297A | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 500V | 500V | Standard | 500V | 15A | 500V | 10μA @ 50V | 1.5V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5811US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 7 Weeks | 2 | Yes | Single | B, SQ-MELF | 6A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 125A | 30 ns | Standard | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDC42D120H8X1SA3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc42d120h8x1sa3-datasheets-6015.pdf | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | S-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 27μA | Standard | 1 | 1200V | 27μA @ 1200V | 1.97V @ 50A | 75A DC | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 70A | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 600V | Standard | 600V | 70A | 600V | 9mA @ 600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PF140W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 1.8kA | Standard | 1.4kV | 95A | 1 | 1400V | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDC42D60E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc42d60e6x1sa1-datasheets-6019.pdf | Die | Contains Lead | 1 | 17 Weeks | no | EAR99 | 8541.10.00.40 | Halogen Free | UPPER | NO LEAD | NOT SPECIFIED | 1 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-XUUC-N1 | 100A | 600V | SINGLE | 600V | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 600V | 100A | 1 | 27μA @ 600V | 1.25V @ 100A | 100A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3210R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1N3210R | 175°C | 1 | O-MUPM-D1 | 15A | 297A | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 15A | 1 | 10μA @ 50V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3208R | GeneSiC Semiconductor | $40.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3208r-datasheets-9196.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N3208R | 175°C | 1 | O-MUPM-D1 | 15A | 297A | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 50V | Standard, Reverse Polarity | 50V | 15A | 1 | 10μA @ 50V | 1.5V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7051-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 70V | CURRENT REGULATOR DIODE | 6.8mA | 4.9V | 70000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 190°C | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard | 1kV | 40A | 1 | 1000V | 9mA @ 1000V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR30 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 1.35V | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.25kA | 300V | 15000μA | Standard, Reverse Polarity | 300V | 70A | 1 | 1.35V @ 220A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP3065A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ffsp3065a-datasheets-6026.pdf | TO-220-2 | 2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | HIGH RELIABILITY, PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | 175°C | Single | 1 | R-PSFM-T2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 240W | 150A | 650V | 200μA | TO-220AC | Silicon Carbide Schottky | 1 | 30A | 1705pF @ 1V 100kHz | 200μA @ 650V | 1.75V @ 30A | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6640 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | 2 | 6 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 300mA | ISOLATED | SILICON | 50V | 0.1μA | DO-35 | 1V | RECTIFIER DIODE | 0.3A | 0.004μs |
