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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-60APF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 180 ns | Standard | 600V | 60A | 830A | 1 | 600V | 100μA @ 600V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL486B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll486b-datasheets-5936.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 100μA | 225V | Standard | 250V | 200mA | 0.2A | 100μA @ 250V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FR12MR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | ANODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 12A | 1 | 1000V | 25μA @ 100V | 1.4V @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 95A | 1.4V | 2.09kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.09kA | 9mA | 800V | 800V | Standard, Reverse Polarity | 800V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N7048-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 80V | CURRENT REGULATOR DIODE | 5.1mA | 3.67V | 100000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1186R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1186 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 200V | 400A | 200V | Standard, Reverse Polarity | 200V | 35A | 1 | 10mA @ 200V | 1.7V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-60APF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 180 ns | Standard | 200V | 60A | 830A | 1 | 200V | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5620 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||
| FR12B05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard | 100V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1187 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1187 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 300V | 400A | 300V | Standard | 300V | 35A | 1 | 10mA @ 300V | 1.7V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||
| VS-1N1187RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1187 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 300V | 300V | Standard, Reverse Polarity | 300V | 40A | 1 | 2.5mA @ 300V | 1.3V @ 126A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||
| VS-50PF140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs50pfr140-datasheets-5691.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | PIN/PEG | Single | 1 | O-MUPM-P1 | 50A | 595A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 595A | 1.4kV | Standard | 1.4kV | 50A | 1 | 1400V | 1.5V @ 125A | -55°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PF80 | Vishay Semiconductor Diodes Division | $7.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 36.4mm | 17.25mm | 18.9mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 95A | 1.4V | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.09kA | 9mA | 800V | 800V | Standard | 800V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-80APF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishay-vs80apf10pbf-datasheets-8418.pdf | TO-247-3 | 3 | 8 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | Common Anode | NOT APPLICABLE | 1 | 1.35V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kA | 100μA | TO-247AC | 480 ns | Standard | 1kV | 80A | 1250A | 1 | 1000V | 100μA @ 1000V | 1.35V @ 80A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1189RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1189 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 800A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.5mA | 500V | Standard, Reverse Polarity | 500V | 40A | 1 | 2.5mA @ 500V | 1.3V @ 126A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-42HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 190°C | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard | 1.2kV | 40A | 1 | 1200V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6638 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | D, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 20ns | Standard | 0.3A | 2.5pF @ 0V 1MHz | 500nA @ 150V | 1.1V @ 200mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-42HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard | 1kV | 40A | 1 | 1000V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1189R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1189 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 400A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 500V | Standard, Reverse Polarity | 500V | 35A | 500A | 1 | 10mA @ 500V | 1.7V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-12FLR100S05 | Vishay Semiconductor Diodes Division | $9.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 1kV | 500ns | 500 ns | Standard, Reverse Polarity | 1kV | 12A | 1000V | 50μA @ 1000V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 12A | 1 | 1000V | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80PF140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr140w-datasheets-5654.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 150°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.57kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | Standard | 1.4kV | 80A | 1250A | 1 | 1400V | 1.46V @ 220A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3612 | Microsemi Corporation | $4.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | Single | 1.1V | 38 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1μA | 400V | 30A | Standard | 400V | 1A | 400V | 1μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5806 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jantx1n5806-datasheets-9116.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | 36 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N6642US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | Standard | 5pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-42HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | Standard, Reverse Polarity | 800V | 40A | 1 | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HF140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 4.5mA | 1.4kV | 1.4kV | Standard | 1.4kV | 40A | 1 | 1400V | 4.5mA @ 1400V | 1.5V @ 125A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3613 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | 38 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30A | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2128RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N2128 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 900A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 50V | Standard, Reverse Polarity | 50V | 60A | 1 | 10mA @ 50V | 1.3V @ 188A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR12JR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Right Angle | 6mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 12A | 180A | SINGLE | ANODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C |
