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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-16FLR40S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 225A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 16A | 400V | 50μA @ 400V | 1.4V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-175BGQ030HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs175bgq030hf4-datasheets-5845.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | R-PSFM-X1 | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 7.4kA | 4500μA | Schottky | 30V | 175A | 7400A | 1 | 8500pF @ 5V 1MHz | 2mA @ 30V | 590mV @ 175A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5619 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 32 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N5619 | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 250 ns | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR80W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | 2.09kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 2.09kA | 800V | Standard, Reverse Polarity | 800V | 95A | 1 | 1.4V @ 267A | -55°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH2065ADN-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | AVALANCHE | /files/onsemiconductor-ffsh2065adnf155-datasheets-5849.pdf | TO-247-3 | 3 | 10 Weeks | yes | HIGH RELIABILITY, PD-CASE | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 175°C | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 93W | 650V | 200μA | TO-247AB | 1.75V | 0ns | Silicon Carbide Schottky | 580A | 1 | 13A | 575pF @ 1V 100kHz | 650V | 200μA @ 650V | 13A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6638 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n6642-datasheets-6195.pdf | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | 2 | Single | 1 | 1.1V | ISOLATED | SILICON | 500nA | 150V | 2.5A | 4.5 ns | RECTIFIER DIODE | 0.3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12BR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | ANODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard, Reverse Polarity | 100V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-175BGQ045HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs175bgq045hf4-datasheets-5854.pdf | PowerTab® | 1 | 12 Weeks | 2 | EAR99 | No | UNSPECIFIED | Single | 1 | R-PSFM-X1 | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 8.7kA | Schottky | 45V | 175A | 8700A | 1 | 5600pF @ 5V 1MHz | 2mA @ 45V | 750mV @ 175A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3890 | GeneSiC Semiconductor | $33.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3890-datasheets-9060.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N3890 | DO-4 | 12A | 90A | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 100V | 100V | 200 ns | 200 ns | Standard | 100V | 12A | 100V | 25μA @ 50V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5415 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| IDC28D120T6MX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/infineontechnologies-idc28d120t6mx1sa2-datasheets-5835.pdf | Die | Lead Free | 1 | 13 Weeks | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | 1 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | Standard | 1 | 50A | 1200V | 10μA @ 1200V | 2.05V @ 50A | 50A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12G05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 500 ns | 500 ns | Standard | 400V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3893 | GeneSiC Semiconductor | $38.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n3893-datasheets-9044.pdf | DO-203AA, DO-4, Stud | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | 2 | Right Angle | 1N3893 | DO-4 | 3.96mm | 12A | 90A | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 600V | 12A | 600V | 25μA @ 50V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1185 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1185 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 150V | 150V | Standard | 150V | 35A | 1 | 10mA @ 150V | 1.7V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||
| VS-12FL80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 12A | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 800V | 500 ns | 500 ns | Standard | 800V | 12A | 800V | 50μA @ 800V | 1.4V @ 12A | 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-16FR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 1.23V | 370A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 370A | 12mA | 1kV | 370A | 1kV | Standard, Reverse Polarity | 1kV | 16A | 1 | 1000V | 12mA @ 1000V | 1.23V @ 50A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| FR12J05 | GeneSiC Semiconductor | $8.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 500 ns | 500 ns | Standard | 600V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GB10SLT12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | -55°C | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | No SVHC | 3 | yes | EAR99 | 8541.10.00.80 | GB10SLT12 | Single | 1 | Rectifier Diodes | 10A | 0.8 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 10A | 520pF @ 1V 1MHz | 1200V | 250μA @ 1200V | 2V @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF12FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | TO-220-2 Full Pack | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 20ETF12 | Single | NOT APPLICABLE | 1 | 1.31V | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 355A | 100μA | 400 ns | Standard | 1.2kV | 20A | 1 | 1200V | 100μA @ 1200V | 1.31V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4942 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 15A | 150 ns | Standard | 200V | 1A | 1A | 1μA @ 200V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-6FL100S05 | Vishay Semiconductor Diodes Division | $7.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Unknown | 2 | No | Single | DO-203AA | 6A | 1.4V | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 1kV | 135A | 1kV | 500 ns | 500 ns | Standard | 1kV | 6A | 1000V | 50μA @ 1000V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FLR80S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 180A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 800V | 500ns | 500 ns | Standard, Reverse Polarity | 800V | 12A | 800V | 50μA @ 800V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2000 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 13 Weeks | Unknown | 2 | No | Single | DO-203AB | 70A | 1.35V | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 15mA | 100V | 1.25kA | 100V | Standard, Reverse Polarity | 100V | 70A | 100V | 15mA @ 100V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5806USE3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 175°C | -65°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Tin | Single | D-5A | 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150V | 25ns | Standard | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 975mV @ 2.5A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-150EBU02HF4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Screw, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs150ebu02hf4-datasheets-5830.pdf | PowerTab® | 1 | 14 Weeks | 2 | EAR99 | No | 8541.10.00.80 | UNSPECIFIED | Single | 1 | R-PSFM-X1 | 1.6kA | CATHODE | ULTRA FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 200V | 1.6kA | 200V | 48 ns | Standard | 200V | 150A | 1600A | 1 | 50μA @ 200V | 1.1V @ 150A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-06AT-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsep6006attub-datasheets-5809.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 600V | 650μA @ 600V | 2.04V @ 60A | 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR140W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 95A | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 1.8kA | Standard, Reverse Polarity | 1.4kV | 95A | 1 | 1400V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80PF140W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80pfr140w-datasheets-5654.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | WIRE | Single | 1 | O-MUPM-W1 | 80A | 1.25kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.4kV | 1.25kA | 1.4kV | Standard | 1.4kV | 80A | 1 | 1400V | 1.46V @ 220A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBJSC51200-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjsc51200g-datasheets-5832.pdf | TO-220-2 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 475pF @ 0V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR10S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 420A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 500 ns | 500 ns | Standard, Reverse Polarity | 100V | 40A | 500A | 1 | 100μA @ 100V | 1.95V @ 40A | -40°C~125°C |
