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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Operating Temperature (Max) | Supply Voltage-Min (Vsup) | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | JESD-30 Code | Output Current | Circuit Type | Forward Current | Forward Voltage | Output Type | Turn On Delay Time | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Number of Outputs | Speed | Output Configuration | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Topology | Synchronous Rectifier | Repetitive Peak Reverse Voltage | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Current - Hold (Ih) (Max) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Control Features | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | Current - Off State (Max) | RMS On-state Current-Max | Desc. of Quick-Connects | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Frequency - Switching | Structure | Number of SCRs, Diodes | Operating Temperature - Junction | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Duty Cycle (Max) |
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| IXFT14N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN48N50U2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | 260 | 4 | Single | 35 | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 520W Tc | 192A | 0.1Ohm | 500V | N-Channel | 8400pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ80N28T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq80n28t-datasheets-8715.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 280V | 280V | 500W Tc | 240A | 0.049Ohm | N-Channel | 5000pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 1mA | 80A Tc | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN260N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfn260n17t-datasheets-9078.pdf | SOT-227-4, miniBLOC | 3 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | NICKEL | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 245A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 170V | 170V | 1090W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 245A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N120PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120p-datasheets-4453.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 543W Tc | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH13N80Q | IXYS | $7.23 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV18N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP14N60P3 | IXYS | $2.71 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 10 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 21 ns | 43 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 327W Tc | TO-220AB | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ40N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfj40n30q-datasheets-3240.pdf | TO-220-3, Short Tab | 300V | 300W Tc | N-Channel | 4800pF @ 25V | 80m Ω @ 20A, 10V | 4V @ 4mA | 40A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N10Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT58N20Q TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft58n20qtrl-datasheets-3348.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 200V | 300W Tc | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM12N100 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 12A | 48A | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM15N60 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2 | NO | BOTTOM | PIN/PEG | 150°C | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-204AE | 15A | 0.5Ohm | 300W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXMS150PSI | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | Not Applicable | CMOS | 400kHz | RoHS Compliant | 1998 | /files/ixys-ixms150psi-datasheets-1756.pdf&product=ixys-ixms150psi-7812344 | 24-DIP (0.300, 7.62mm) | Contains Lead | 24 | yes | EAR99 | NO | DUAL | 12V | IXMS150 | 10.8V | STEPPER MOTOR CONTROLLER | 45mA | 10mA | Transistor Driver | Step-Up/Step-Down | 2 | Positive | Half-Bridge | No | Dead Time Control, Enable, Frequency Control | 12V | 10kHz~400kHz | 95% | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN404 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdi404-datasheets-5921.pdf | Yes | FET Driver (External FET) | IXDN404 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA100A1600NB | IXYS |
Min: 1 Mult: 1 |
download | 28 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT90P10P | IXYS | $10.83 |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt90p10p-datasheets-8682.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 462W Tc | 225A | 0.025Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 25m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN27N80 | IXYS | $5.12 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk27n80-datasheets-0806.pdf | 800V | 27A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 300mOhm | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 80ns | 40 ns | 75 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 250 ns | 108A | 800V | N-Channel | 9740pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 8mA | 27A Tc | 400nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH8P50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt8p50-datasheets-3920.pdf | -500V | -8A | TO-247-3 | Lead Free | 3 | 28 Weeks | 1.2Ohm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 27ns | 35 ns | 35 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | TO-247AD | 8A | -500V | P-Channel | 3400pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX120N65X2 | IXYS | $43.58 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtx120n65x2-datasheets-2474.pdf | TO-247-3 | 15 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 13600pF @ 25V | 24m Ω @ 60A, 10V | 4.5V @ 8mA | 120A Tc | 240nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH90N20X3 | IXYS | $47.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-247-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30x3-datasheets-2094.pdf | TO-247-3 | 19 Weeks | 300V | 890W Tc | N-Channel | 13.1nF @ 25V | 8.3m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 254nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-018AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 180V | 23A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-06AT | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | AVALANCHE | RoHS Compliant | TO-268-3 | Lead Free | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 2.04V | 600A | CATHODE | GENERAL PURPOSE | SILICON | 650μA | 600V | 600A | 600V | TO-268AA | 35 ns | 35 ns | RECTIFIER DIODE | 600V | 60A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG10IM300UC | IXYS | $9.32 |
Min: 1 Mult: 1 |
Surface Mount | Tape and Reel | 175°C | -55°C | RoHS Compliant | TO-252 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.45V | 140A | CATHODE | FAST SOFT RECOVERY | SILICON | 1μA | 140A | 300V | 35 ns | 35 ns | RECTIFIER DIODE | 300V | 10A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CS19-08HO1S-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TJ | 2015 | /files/ixys-cs1908ho1strl-datasheets-8164.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | CS19 | SCR | 800V | 31A | 50mA | 1.5V | 180A 195A | 28mA | 20A | Standard Recovery | 1.32V | 50μA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VHF55-12IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/ixys-vko5508io7-datasheets-4359.pdf | 53A | FO-T-A | 6 | 25 Weeks | 6 | yes | 8541.30.00.80 | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | VHF55 | NOT SPECIFIED | 2 | Silicon Controlled Rectifiers | Not Qualified | SCR | 41000A | BRIDGE, HALF-CONTROLLED, COMMON CATHODE WITH BUILT-IN DIODE | ISOLATED | 5mA | 200mA | 1200V | SCR | 1.2kV | 1200V | 200mA | 1.5V | 550A 600A | 100mA | 41A | 2G-2AK-CA-CK | Bridge, Single Phase - SCRs/Diodes (Layout 1) | 2 SCRs, 2 Diodes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI60-06A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -55°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6006a-datasheets-6221.pdf&product=ixys-dsei6006a-5831809 | 600V | 60A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | No SVHC | 2 | yes | EAR99 | FREEWHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | 3 | Single | 166W | 1 | Rectifier Diodes | R-PSFM-T3 | 60A | 60A | 1.8V | 600A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 550A | 200μA | 600V | 600A | 600V | 50 ns | 50 ns | Standard | 600V | 60A | 1 | 200μA @ 600V | 1.8V @ 70A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH50N90B2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixgh50n90b2-datasheets-0569.pdf | TO-247-3 | 3 | 30 Weeks | 6.500007g | 3 | yes | 400W | NOT SPECIFIED | IXG*50N90 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 400W | TO-247AD | 900V | 48 ns | 900V | 75A | 820 ns | 720V, 50A, 5 Ω, 15V | 2.7V @ 15V, 50A | PT | 135nC | 200A | 20ns/350ns | 4.7mJ (off) |
