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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Current | Circuit Type | Forward Current | Forward Voltage | Turn On Delay Time | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Collector Emitter Voltage (VCEO) | Max Collector Current | Non-Repetitive Pk On-state Cur | Repetitive Peak Reverse Voltage | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Current - Hold (Ih) (Max) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | RMS On-state Current-Max | Desc. of Quick-Connects | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Operating Temperature - Junction | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Capacitance - Input |
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| IXFX100N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk100n25-datasheets-8553.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 110 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 400A | 0.027Ohm | 250V | N-Channel | 9100pF @ 25V | 27m Ω @ 50A, 10V | 4V @ 8mA | 100A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 320A | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA62N25T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 62A | 250V | N-Channel | 62A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX260N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx260n17t-datasheets-9075.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1670W Tc | 700A | 0.0065Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 6.5m Ω @ 60A, 10V | 5V @ 8mA | 260A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV15N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100p-datasheets-4049.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 44ns | 58 ns | 44 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 543W Tc | 40A | 0.76Ohm | 500 mJ | 1kV | N-Channel | 5140pF @ 25V | 760m Ω @ 500mA, 10V | 6.5V @ 1mA | 15A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC52N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfc52n30p-datasheets-4304.pdf | ISOPLUS220™ | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | 22ns | 20 ns | 60 ns | 24A | 20V | SILICON | ISOLATED | SWITCHING | 100W Tc | 150A | 0.075Ohm | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 75m Ω @ 26A, 10V | 5V @ 4mA | 24A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC14N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc14n80p-datasheets-4347.pdf | ISOPLUS220™ | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSIP-T3 | 75 ns | 8A | SILICON | ISOLATED | SWITCHING | 130W Tc | 8A | 40A | 0.77Ohm | 1200 mJ | 800V | N-Channel | 3900pF @ 25V | 770m Ω @ 7A, 10V | 5.5V @ 4mA | 8A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL44N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n80-datasheets-4432.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSIP-T3 | 35 ns | 48ns | 24 ns | 100 ns | 44A | 20V | SILICON | ISOLATED | SWITCHING | 550W Tc | 176A | 0.165Ohm | 4000 mJ | 800V | N-Channel | 10000pF @ 25V | 165m Ω @ 22A, 10V | 4V @ 8mA | 44A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA14N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 327W Tc | 35A | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD80N20Q-8XQ | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 200V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX30N50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | yes | AVALANCHE RATED | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 30A | 120A | 0.16Ohm | 1500 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT40N30Q TR | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft40n30qtr-datasheets-3345.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 300V | 300W Tc | N-Channel | 3560pF @ 25V | 85m Ω @ 20A, 10V | 4V @ 4mA | 40A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM10N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | TO-204AA, TO-3 | 2 | yes | AVALANCHE RATED | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 300W Tc | 10A | 40A | N-Channel | 4200pF @ 25V | 1.1 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1630 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP28N15P | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI404 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdi404-datasheets-5921.pdf | Yes | FET Driver (External FET) | IXDI404 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDP610 | IXYS |
Min: 1 Mult: 1 |
download | Timing | 1 (Unlimited) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-evdp610-datasheets-0179.pdf | 18 Weeks | Yes | PWM Signal Generator | IXDP610 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT120N30X3HV | IXYS | $17.58 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n30x3-datasheets-9080.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 300V | 735W Tc | N-Channel | 10.5nF @ 25V | 11m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK300N20X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx300n20x3-datasheets-2423.pdf | TO-264-3, TO-264AA | 19 Weeks | 200V | 1250W Tc | N-Channel | 23800pF @ 25V | 4m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP6N100D2 | IXYS | $6.90 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n100d2-datasheets-5417.pdf | TO-220-3 | 3 | 24 Weeks | yes | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-220AB | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH88N30P | IXYS | $1.50 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq88n30p-datasheets-2251.pdf | TO-247-3 | Lead Free | 3 | 35 Weeks | 40MOhm | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 600W | 1 | R-PSFM-T3 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 220A | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB70N60Q2 | IXYS | $163.30 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb70n60q2-datasheets-2615.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 8 Weeks | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 12 ns | 60 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 890W Tc | 280A | 0.088Ohm | 5 mJ | 600V | N-Channel | 12000pF @ 25V | 88m Ω @ 35A, 10V | 5.5V @ 8mA | 70A Tc | 265nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB150N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfb150n65x2-datasheets-7399.pdf | TO-264-3, TO-264AA | 19 Weeks | 150A | 650V | 1560W Tc | N-Channel | 20400pF @ 25V | 17m Ω @ 75A, 10V | 5.5V @ 8mA | 150A Tc | 430nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS10-018AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 180V | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP25-16AT | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 180°C | -40°C | AVALANCHE | RoHS Compliant | TO-268-3 | 2 | yes | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | Dual | 2 | Rectifier Diodes | R-PSSO-G2 | 1.6V | 300A | GENERAL PURPOSE | SILICON | 2mA | 330A | 1.6kV | TO-268AA | RECTIFIER DIODE | 1.6kV | 28A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC3902CTR | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 110°C | -55°C | RoHS Compliant | SOT-89 | 2.5Ohm | NOT SPECIFIED | NOT SPECIFIED | 250V | 1.8W | 2.5 Ω | 230pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMA50E1600TZ-TRL | IXYS |
Min: 1 Mult: 1 |
download | CMA50E1600TZ | Surface Mount | -40°C~150°C TJ | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | SCR | 1.6kV | 79A | 100mA | 1.5V | 550A 595A | 50mA | 50A | Standard Recovery | 1.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VTO70-14IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | /files/ixys-vvzf7008io7-datasheets-4736.pdf | 70A | FO-T-A | 11 | yes | FAST | 8541.30.00.80 | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | VTO | NOT SPECIFIED | 6 | Silicon Controlled Rectifiers | Not Qualified | R-XUFM-D11 | SCR | 70000A | 3 PHASE BRIDGE | ISOLATED | 5mA | 200mA | 550 A | 1400V | SCR | 1.4kV | 1400V | 200mA | 1.5V | 550A 600A | 100mA | 36A | 3AK-CA-CK | Bridge, 3-Phase - All SCRs | 6 SCRs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI60-12A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6012a-datasheets-5983.pdf&product=ixys-dsei6012a-5831756 | 1.2kV | 52A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | 3 | Single | 189W | 1 | Rectifier Diodes | 52A | 52A | 2.55V | 450A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 2.2mA | 1.2kV | 450A | 1.2kV | 60 ns | 60 ns | Standard | 1.2kV | 52A | 1 | 1200V | 2.2mA @ 1200V | 2.55V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N65C3D1 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixyq40n65c3d1-datasheets-0445.pdf | TO-247-3 | 28 Weeks | 300W | 300W | 120 ns | 650V | 2.35V | 80A | 400V, 30A, 10 Ω, 15V | 2.35V @ 15V, 40A | PT | 66nC | 180A | 23ns/110ns | 830μJ (on), 360μJ (off) |
