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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA4N80P | IXYS | $7.11 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n80p-datasheets-1592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTP4N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N65X2 | IXYS | $2.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 8A | 14A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTP5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTY3N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 2.9Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTY2N60P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFR90N30 | IXYS | $116.07 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr90n30-datasheets-7376.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 400W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 75A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4.5V @ 4mA | 75A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA180N055T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 600A | 0.004Ohm | 1000 mJ | N-Channel | 4V @ 1mA | 180A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX66N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx66n50q2-datasheets-7474.pdf | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 16ns | 10 ns | 60 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTA200N085T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t7-datasheets-7517.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 5MOhm | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G6 | 80ns | 64 ns | 65 ns | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480W Tc | 540A | 1 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTC180N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | ISOPLUS220™ | 4mOhm | 55V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP55N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp55n075t-datasheets-7621.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 50ns | 41 ns | 44 ns | 55A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 50A | 250 mJ | 75V | N-Channel | 1400pF @ 25V | 19.5m Ω @ 27.5A, 10V | 4V @ 25μA | 55A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTQ200N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n085t-datasheets-7562.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| VMO80-05P1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | ECO-PAC2 | 18 | yes | UL RECOGNIZED | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 18 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X18 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 82A | 0.05Ohm | 3000 mJ | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc280n055t-datasheets-7929.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 145A | SILICON | DRAIN | SWITCHING | 160W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.6m Ω @ 50A, 10V | 4V @ 250μA | 145A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n60-datasheets-5296.pdf | 600V | 38A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 130MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 55ns | 45 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 60A | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 4mA | 38A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFC40N30Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | ISOPLUS220™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 36A | 160A | 0.08Ohm | 1000 mJ | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | No SVHC | 700mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 15A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 360W Tc | 60A | 1kV | N-Channel | 4500pF @ 25V | 4.5 V | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 15A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK35N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 42ns | 23 ns | 110 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 140A | 0.15Ohm | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 16.5A, 10V | 4V @ 4mA | 35A Tc | 227nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR150N15 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr150n15-datasheets-8652.pdf | ISOPLUS247™ | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFX180N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-247-3 | 3 | Single | 560W | PLUS247™-3 | 9.1nF | 90ns | 55 ns | 140 ns | 180A | 20V | 85V | 560W Tc | 7mOhm | 85V | N-Channel | 9100pF @ 25V | 7mOhm @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTJ36N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixtj36n20-datasheets-8710.pdf | TO-3P-3 Full Pack | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSIP-T3 | 130ns | 98 ns | 110 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 144A | 0.07Ohm | 200V | N-Channel | 2970pF @ 25V | 70m Ω @ 18A, 10V | 4V @ 4mA | 36A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH80N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-247-3 | Lead Free | 3 | 9MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | AVALANCHE RATED | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 89W Tc | 4A | 10A | 2Ohm | 150 mJ | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFC96N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc96n15p-datasheets-4288.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 33ns | 18 ns | 66 ns | 42A | 20V | 150V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 250A | 0.026Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 5 V | 26m Ω @ 48A, 10V | 5V @ 4mA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK32N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN44N80 | IXYS | $31.19 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n80-datasheets-4415.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 165mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 48ns | 24 ns | 100 ns | 44A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4.5V | 700W Tc | 250 ns | 176A | 4000 mJ | 800V | N-Channel | 10000pF @ 25V | 4.5 V | 165m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTF1N400 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n400-datasheets-1240.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | yes | EAR99 | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 4000V | 160W Tc | 1A | 3A | N-Channel | 2530pF @ 25V | 60 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 78nC @ 10V | 10V | ±20V |
