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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH450P2 | IXYS | $6.47 |
Min: 1 Mult: 1 |
download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth450p2-datasheets-0479.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 35A | 0.33Ohm | 750 mJ | 500V | N-Channel | 2530pF @ 25V | 330m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFN150N65X2 | IXYS | $37.05 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n65x2-datasheets-8511.pdf | SOT-227-4, miniBLOC | 19 Weeks | 145A | 650V | 1040W Tc | N-Channel | 21000pF @ 25V | 17m Ω @ 75A, 10V | 5V @ 8mA | 145A Tc | 355nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFB90N85X | IXYS | $38.59 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfb90n85x-datasheets-2302.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | unknown | 90A | 850V | 1785W Tc | N-Channel | 13300pF @ 25V | 41m Ω @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP1R6N50D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | UL RECOGNIZED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 41 ns | 35 ns | 1.6A | 20V | SILICON | DRAIN | AMPLIFIER | 100W Tc | TO-220AB | 500V | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||
| IXTA100N15X4 | IXYS | $9.18 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp100n15x4-datasheets-5520.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 375W Tc | N-Channel | 3970pF @ 25V | 11.5m Ω @ 50A, 10V | 4.5V @ 250μA | 100A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N100X | IXYS | $17.50 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft32n100xhv-datasheets-5642.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 890W Tc | N-Channel | 4075pF @ 25V | 220m Ω @ 16A, 10V | 6V @ 4mA | 32A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN74N100X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn74n100x-datasheets-5745.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 1170W Tc | N-Channel | 17000pF @ 25V | 66m Ω @ 37A, 10V | 5.5V @ 8mA | 74A Tc | 425nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA06N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1200V | 42W Tc | N-Channel | 236pF @ 25V | 34 Ω @ 300mA, 10V | 4V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX400N15X4 | IXYS | $41.96 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtk400n15x4-datasheets-5726.pdf | TO-247-3 | 15 Weeks | 150V | 1500W Tc | N-Channel | 14500pF @ 25V | 3.1m Ω @ 100A, 10V | 4.5V @ 1mA | 400A Tc | 430nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH120P065T | IXYS | $31.87 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120p065t-datasheets-5518.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 28ns | 21 ns | 120A | 15V | SILICON | DRAIN | SWITCHING | 65V | 298W Tc | 0.12A | 360A | 0.01Ohm | 1000 mJ | -65V | P-Channel | 13200pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||
| IXFH30N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n85x-datasheets-1375.pdf | TO-247-3 | 19 Weeks | yes | 850V | 695W Tc | N-Channel | 2460pF @ 25V | 220m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 30A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTT440N04T4HV | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtt440n04t4hv-datasheets-2739.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | yes | unknown | 440A | 40V | 940W Tc | N-Channel | 26000pF @ 25V | 1.25m Ω @ 100A, 10V | 4V @ 250μA | 440A Tc | 480nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IXTU55N075T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 55A | 75V | N-Channel | 4V @ 25μA | 55A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N65X2 | IXYS | $1.86 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTA50N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta50n20p-datasheets-3223.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IXTT88N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq88n30p-datasheets-2251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | R-PSSO-G2 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXFX32N100Q3 | IXYS | $112.35 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100q3-datasheets-1617.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 20 Weeks | 247 | EAR99 | 3 | Single | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 45 ns | 250ns | 54 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1250W Tc | 96A | 0.32Ohm | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 32A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| IXTH1N450HV | IXYS | $35.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n450hv-datasheets-9122.pdf | TO-247-3 Variant | 24 Weeks | 1A | 4500V | 520W Tc | N-Channel | 1700pF @ 25V | 80 Ω @ 50mA, 10V | 6V @ 250μA | 1A Tc | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH52P10P | IXYS | $7.08 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta52p10p-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 50MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | 130A | 1500 mJ | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||
| IXTT74N20P | IXYS | $26.24 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt74n20p-datasheets-3845.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 34MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 250μA | 74A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||
| IXTQ470P2 | IXYS | $15.45 |
Min: 1 Mult: 1 |
download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq470p2-datasheets-3877.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1300 mJ | 500V | N-Channel | 5400pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 250μA | 42A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTV102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 102A | 250V | N-Channel | 102A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA30N65X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH35N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkh35n60c5-datasheets-3990.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 20 Weeks | 100MOhm | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 800 mJ | 600V | N-Channel | 2800pF @ 100V | 100m Ω @ 18A, 10V | 3.9V @ 1.2mA | 35A Tc | 70nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||
| IXFT96N20P | IXYS | $9.01 |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n20p-datasheets-3565.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||
| IXFQ50N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixft50n50p3-datasheets-3600.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 25 ns | 53 ns | 50A | 30V | 500V | 960W Tc | N-Channel | 4335pF @ 25V | 120m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFR15N100P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1000V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ120N20P | IXYS | $16.35 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk120n20p-datasheets-4157.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 714W | 1 | 35ns | 31 ns | 100 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 714W Tc | 0.022Ohm | 2000 mJ | 200V | N-Channel | 6000pF @ 25V | 22m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXFT24N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 96A | 0.23Ohm | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| IXFT20N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n100p-datasheets-7106.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 570MOhm | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37ns | 45 ns | 56 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 660W Tc | 50A | 800 mJ | 1kV | N-Channel | 7300pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 126nC @ 10V | 10V | ±30V |
