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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSS16-0045B | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dss160045b-datasheets-5021.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 480mV | 320A | 10mA | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90W | 320A | Schottky | 45V | 16A | 300A | 1 | 10mA @ 45V | 480mV @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA40IM800PC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 185W | 800V | 10μA | Standard | 275A | 1 | 40A | 10pF @ 400V 1MHz | 800V | 10μA @ 800V | 1.3V @ 40A | 40A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2-12A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ds212a-datasheets-5798.pdf | Axial | 2 | 16 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | Nickel (Ni) | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.25V | 120A | 2mA | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 127A | Standard | 1.2kV | 3.6A | 1 | 1200V | 2mA @ 1200V | 1.25V @ 7A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-12B | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | AVALANCHE | TO-220-2 | 2 | 28 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 165W | 1200V | 100μA | TO-220AC | 140ns | Standard | 200A | 1 | 12pF @ 600V 1MHz | 1200V | 100μA @ 1200V | 3.76V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA30P1600HB | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | TO-247-3 | 20 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 11pF @ 400V 1MHz | 1600V | 40μA @ 1600V | 1.26V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1411LC360 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | Standard | 3600V | 30mA @ 3600V | 2V @ 2870A | 1411A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1494NK250 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | 3.9μs | Standard | 2500V | 1.15V @ 1000A | 1975A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W2054NC420 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W5 | Standard Recovery >500ns, > 200mA (Io) | Standard | 4200V | 50mA @ 4200V | 1.7V @ 3000A | 2055A | -40°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W5282ZC240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | W7 | Standard Recovery >500ns, > 200mA (Io) | Standard | 2400V | 100mA @ 2400V | 1.35V @ 6000A | 5282A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W5715ED600 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 2 | 8 Weeks | YES | END | NO LEAD | 150°C | 1 | O-CEDB-N2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6000V | 120000μA | 73μs | Standard | 66600A | 1 | 5750A | 6000V | 120mA @ 6000V | 1.4V @ 4000A | 5750A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M0437WC140 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W1 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1400V | 20mA @ 1400V | 1.47V @ 635A | 437A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA120E2200KO | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | ISOPLUS264™ | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 88pF @ 700V 1MHz | 2200V | 100μA @ 2200V | 1.31V @ 120A | 120A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS10-030A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dgs10030a-datasheets-1684.pdf | TO-220-2 | 2 | EAR99 | HIGH SWITCHING SPEED | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | 20A | 1.3mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | TO-220AC | Schottky | 300V | 11A | 1 | 1.3mA @ 300V | 2V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS2-40BB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dss240bb-datasheets-1748.pdf | DO-214AA, SMB | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW NOISE | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 500mV | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | Schottky | 40V | 2A | 1 | 2A | 500μA @ 40V | 420mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-03A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-dsep2903a-datasheets-1849.pdf | TO-220-2 | 2 | No SVHC | 2 | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 1 | Rectifier Diodes | Not Qualified | 30A | 930mV | 300A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 170W | 300A | 250μA | 300V | 300A | 300V | 30 ns | 30 ns | Standard | 300V | 30A | 1 | 10μA @ 300V | 1.26V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDO1200-20N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | Y1-CU | MDO1200 | Y1-CU | Standard Recovery >500ns, > 200mA (Io) | Standard | 2kV | 2000V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP140P05T | IXYS | $3.34 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140p05t-datasheets-1699.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 298W Tc | TO-220AB | 420A | 0.009Ohm | 1000 mJ | P-Channel | 13500pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 200nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX230N20T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx230n20t-datasheets-3117.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 1.67kW | 1 | FET General Purpose Power | R-PSIP-T3 | 230A | 20V | DRAIN | SWITCHING | 1670W Tc | 630A | 0.0075Ohm | 3000 mJ | 200V | N-Channel | 28000pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 8mA | 230A Tc | 378nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X60-015X2-SMD | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-gmm3x60015x2smd-datasheets-0346.pdf | ISOPLUS-DIL™ | 24 | EAR99 | e2 | TIN SILVER | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | FET General Purpose Power | R-PDSO-G24 | 50A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | METAL-OXIDE SEMICONDUCTOR | 57A | 0.024Ohm | 6 N-Channel (3-Phase Bridge) | 5800pF @ 25V | 24m Ω @ 38A, 10V | 4.5V @ 1mA | 97nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP130N15X4 | IXYS | $5.49 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp130n15x4-datasheets-7535.pdf | TO-220-3 | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8.5m Ω @ 70A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA26N30X3 | IXYS | $3.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP80N075L2 | IXYS | $5.93 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n075l2-datasheets-0936.pdf | TO-220-3 | 24 Weeks | 80A | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX4N300P3HV | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtx4n300p3hv-datasheets-8647.pdf | TO-247-3 Variant | 24 Weeks | unknown | 4A | 3000V | 960W Tc | N-Channel | 3680pF @ 25V | 12.5 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA80N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp80n10t-datasheets-0277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 54ns | 48 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 220A | 400 mJ | 100V | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N10T | IXYS | $2.41 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp60n10t-datasheets-3593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 176W | 1 | FET General Purpose Power | R-PSSO-G2 | 40ns | 37 ns | 43 ns | 60A | SILICON | DRAIN | SWITCHING | 176W Tc | 500 mJ | 100V | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N15X4 | IXYS | $11.32 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta130n15x4-datasheets-5545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8m Ω @ 65A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR48N60P | IXYS | $17.07 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr48n60p-datasheets-5650.pdf | 600V | 48A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 32A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 110A | 0.15Ohm | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 150m Ω @ 24A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX210P10T | IXYS | $25.77 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtx210p10t-datasheets-6326.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1040W Tc | 800A | 0.0075Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 7.5m Ω @ 105A, 10V | 4.5V @ 250μA | 210A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA80N25X3TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK200N10P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk200n10p-datasheets-7141.pdf | TO-264-3, TO-264AA | Lead Free | 28 Weeks | No SVHC | 3 | Single | 800W | TO-264 (IXTK) | 7.6nF | 35ns | 90 ns | 150 ns | 200A | 20V | 100V | 5V | 800W Tc | 7.5mOhm | 100V | N-Channel | 7600pF @ 25V | 7.5mOhm @ 100A, 10V | 5V @ 500μA | 200A Tc | 240nC @ 10V | 7.5 mΩ | 10V | ±20V |
