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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Interface IC Type | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Output Peak Current Limit-Nom | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Turn Off Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise / Fall Time (Typ) | High Side Driver | Channel Type | Trigger Device Type | Utilized IC / Part | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | Logic Voltage - VIL, VIH | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFR80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n20q-datasheets-9024.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 71A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 80A | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 80A, 10V | 4V @ 4mA | 71A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV110N25TS | IXYS | $52.66 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv110n25ts-datasheets-0994.pdf | PLUS-220SMD | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | THROUGH-HOLE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T2 | 27ns | 27 ns | 60 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 694W Tc | 0.024Ohm | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 1mA | 110A Tc | 157nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N60Q | IXYS | $16.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n60q-datasheets-7472.pdf | TO-247-3 | Lead Free | 3 | 350mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 20ns | 20 ns | 45 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 3300pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFI7N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80p-datasheets-9747.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 32ns | 24 ns | 55 ns | 7A | 30V | SILICON | SWITCHING | 200W Tc | TO-263 | 7A | 18A | 300 mJ | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV18N90PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | PLUS-220SMD | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN64N50PD3 | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfn64n50pd3-datasheets-8511.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 52A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 625W Tc | 50A | 200A | 0.085Ohm | 2500 mJ | N-Channel | 11000pF @ 25V | 85m Ω @ 32A, 10V | 5V @ 8mA | 50A Tc | 186nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH67N10Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfh67n10q-datasheets-3230.pdf | TO-247-3 | 100V | 300W Tc | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ80N20Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK14N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-264-3, TO-264AA | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 360W Tc | 14A | 56A | 0.75Ohm | 1500 mJ | N-Channel | 4500pF @ 25V | 750m Ω @ 7A, 10V | 5V @ 4mA | 14A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD1R4N60P 11 | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 600V | 50W Tc | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM21N50L | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD2N60P-1J | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | Die | 600V | 56W Tc | N-Channel | 240pF @ 25V | 5.1Ohm @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN402 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn402-datasheets-5919.pdf | Yes | FET Driver (External FET) | IXDN402 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD414 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Lead Free | Yes | FET Driver (External FET) | IX DD414 DVR | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N200P3 | IXYS | $7.63 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-247-3 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N50 | IXYS | $90.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 120mOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | 60ns | 30 ns | 100 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 500V | N-Channel | 8400pF @ 25V | 120m Ω @ 500mA, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N200P3HV | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-247-3 Variant | 24 Weeks | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ180N10T | IXYS | $22.82 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth180n10t-datasheets-4587.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN82N60Q3 | IXYS | $45.92 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn82n60q3-datasheets-2592.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 300ns | 60 ns | 66A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 0.0075Ohm | 600V | N-Channel | 13500pF @ 25V | 75m Ω @ 41A, 10V | 6.5V @ 8mA | 66A Tc | 275nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN300N20X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn300n20x3-datasheets-7332.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 695W Tc | N-Channel | 23800pF @ 25V | 3.5m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEC16-12AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | AVALANCHE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsec1612as-datasheets-4461.pdf | TO-263-3 | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 4 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 2.94V | 40A | 250μA | SOFT RECOVERY | SILICON | 60W | 40A | 40 ns | 40 ns | RECTIFIER DIODE | 1.2kV | 10A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP40-03AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Bulk | 175°C | -55°C | RoHS Compliant | TO-263 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.81V | 340A | CATHODE | FAST SOFT RECOVERY | SILICON | 5μA | 340A | 300V | 35 ns | 35 ns | RECTIFIER DIODE | 300V | 40A | 300A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS16-01AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 175°C | -55°C | RoHS Compliant | TO-263-3 | Lead Free | 3 | Single | 16A | 790mV | 230A | 500μA | 500μA | 100V | 230A | 100V | 16A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXDN504PI | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | CMOS | Non-Inverting | 4.57mm | RoHS Compliant | 2007 | /files/ixys-ixdn504d1tr-datasheets-4609.pdf | 8-DIP (0.300, 7.62mm) | 9.59mm | 8 | 599.989307mg | 2 | EAR99 | 2 | 10mA | 4.5V~30V | DUAL | NOT SPECIFIED | 18V | IXD*504 | 8 | NOT SPECIFIED | MOSFET Drivers | 4.5/30V | Not Qualified | R-PDIP-T8 | BUFFER OR INVERTER BASED MOSFET DRIVER | 16ns | 14 ns | 4A | 0.06 μs | 0.05 μs | 9ns 8ns | NO | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | 0.8V 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VWO60-08IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-vwo6008io7-datasheets-4667.pdf | Module | 12 | 12 | yes | FAST | 8541.30.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | VWO | 12 | NOT SPECIFIED | 6 | Not Qualified | 43A | 3 BANKS, ANTI-PARALLEL, 2 ELEMENTS | ISOLATED | 200mA | 800V | SCR | 43A | 1.5V | 550A 600A | 100mA | 27A | 3-Phase Controller - All SCRs | 6 SCRs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI12-12A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei1212a-datasheets-2174.pdf&product=ixys-dsei1212a-5831717 | 1.2kV | 11A | TO-220-2 | 10.66mm | 9.15mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 78W | 1 | Rectifier Diodes | 11A | 11A | 2.6V | 25A | 80A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 250μA | 1.2kV | 80A | 1.2kV | 70 ns | 70 ns | Standard | 1.2kV | 11A | 1 | 1200V | 250μA @ 1200V | 2.6V @ 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP20N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp20n120-datasheets-0483.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | 3 | yes | unknown | 150W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | MOTOR CONTROL | N-CHANNEL | 150W | TO-220AB | 1.2kV | 3V | 57 ns | 1.2kV | 40A | 1200V | 1250 ns | 800V, 20A, 47 Ω, 15V | 20V | 5V | 2.5V @ 15V, 20A | PT | 63nC | 80A | 28ns/400ns | 6.5mJ (off) | 700ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBA16N170AHV | IXYS |
Min: 1 Mult: 1 |
download | BIMOSFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/ixys-ixbt16n170ahv-datasheets-0833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | 150W | 25ns | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 6V @ 15V, 10A | 65nC | 40A | 15ns/250ns | 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDNA300P2200PTSF | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | SimBus F | 16 Weeks | Standard | 2200V | 300A | 1 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ110A19K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz110a16k-datasheets-7630.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ110 | 3 | NOT SPECIFIED | 2 | Not Qualified | 18.3V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 1.9kV | Standard | 19kV | 3.5A | 1 | 19000V | 500μA @ 19000V | 18.3V @ 12A | 1 Pair Series Connection |
