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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA16N50P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 500V | 300W Tc | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA27N20T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 27A | 20V | N-Channel | 27A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N120P | IXYS | $13.28 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 150°C | FET General Purpose Power | 1A | Single | 63W | 1200V | 1A | N-Channel | 1A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU05N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtu05n100-datasheets-2119.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP74N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N065T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n065t2-datasheets-2316.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 250W Tc | 330A | 0.0066Ohm | 600 mJ | N-Channel | 4800pF @ 25V | 6.6m Ω @ 50A, 10V | 4V @ 250μA | 130A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTP270N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-220-3 | 24 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 36A | 200V | N-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 180W Tc | N-Channel | 3290pF @ 25V | 10m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP2N65X2 | IXYS | $2.72 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixty2n65x2-datasheets-9221.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 2A | 650V | 55W Tc | N-Channel | 180pF @ 25V | 2.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 4.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA18P10T | IXYS | $0.85 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18p10t-datasheets-2547.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 83W Tc | 60A | 0.12Ohm | 200 mJ | P-Channel | 2100pF @ 25V | 120m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||
| IXTA08N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 50W Tc | N-Channel | 333pF @ 25V | 25 Ω @ 400mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-220AB | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFV26N50PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n50p-datasheets-9078.pdf | 500V | 26A | PLUS-220SMD | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 4mA | 26A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTI10N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixti10n60p-datasheets-5893.pdf | 600V | 10A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 24ns | 18 ns | 55 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-263 | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFV30N60PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFR50N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr50n50-datasheets-7374.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 43A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 200A | 0.1Ohm | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 43A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFT17N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh17n80q-datasheets-0604.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 16 ns | 53 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 68A | 0.6Ohm | 1000 mJ | 800V | N-Channel | 3600pF @ 25V | 600m Ω @ 500mA, 10V | 4.5V @ 4mA | 17A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFT20N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n60q-datasheets-7472.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 45 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 80A | 0.35Ohm | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTC220N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc220n055t-datasheets-7515.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 62ns | 53 ns | 53 ns | 130A | SILICON | ISOLATED | SWITCHING | 150W Tc | 600A | 0.0044Ohm | 500 mJ | 55V | N-Channel | 7200pF @ 25V | 4.4m Ω @ 25A, 10V | 4V @ 250μA | 130A Tc | 158nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTC240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc240n055t-datasheets-7548.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 54ns | 75 ns | 63 ns | 132A | SILICON | ISOLATED | SWITCHING | 150W Tc | 650A | 0.004Ohm | 500 mJ | 55V | N-Channel | 7600pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 1mA | 132A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTH280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth280n055t-datasheets-7581.pdf | TO-247-3 | Lead Free | 3 | 3.2MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 55ns | 37 ns | 49 ns | 280A | SILICON | DRAIN | SWITCHING | 550W Tc | 600A | 1500 mJ | 55V | N-Channel | 9700pF @ 25V | 3.2m Ω @ 50A, 10V | 4V @ 250μA | 280A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTQ180N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth180n085t-datasheets-7552.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 5.5MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | 70ns | 65 ns | 55 ns | 180A | SILICON | DRAIN | SWITCHING | 430W Tc | 480A | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTV200N10TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtv200n10ts-datasheets-7656.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 31ns | 34 ns | 45 ns | 200A | SILICON | DRAIN | SWITCHING | 550W Tc | 500A | 0.0055Ohm | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTV280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv280n055ts-datasheets-7688.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 280A | SILICON | DRAIN | SWITCHING | 550W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.2m Ω @ 50A, 10V | 4V @ 250μA | 280A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTP160N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n085t-datasheets-7462.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 61ns | 36 ns | 65 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 350A | 0.006Ohm | 1000 mJ | 85V | N-Channel | 6400pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 1mA | 160A Tc | 164nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFX34N80 | IXYS | $3.57 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk34n80-datasheets-5290.pdf | 800V | 34A | TO-247-3 | Lead Free | 3 | 8 Weeks | 240MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 45ns | 40 ns | 100 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 5V @ 8mA | 34A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRFP250 | IXYS | $0.51 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp250-datasheets-8428.pdf | TO-247-3 | Lead Free | 3 | 3 | EAR99 | 3 | Single | 190W | 1 | FET General Purpose Power | Not Qualified | 130ns | 98 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-247AD | 120A | 0.085Ohm | 200V | N-Channel | 2970pF @ 25V | 85m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH30N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n50-datasheets-4425.pdf | TO-247-3 | 3 | 6g | No SVHC | 160mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 42ns | 26 ns | 110 ns | 30A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 360W Tc | 250 ns | 120A | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 4 V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFK30N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk30n50q-datasheets-8591.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 150nC @ 10V | 10V | ±20V |
