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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTV120N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3, Short Tab | 120A | 150V | N-Channel | 120A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH86N25T | IXYS | $8.07 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 540W Ta | TO-247AD | 86A | 190A | 0.037Ohm | 1500 mJ | N-Channel | 5330pF @ 25V | 37m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFP36N55X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA3N80 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n80-datasheets-3925.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 11ns | 14 ns | 25 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 14.4A | 400 mJ | 800V | N-Channel | 685pF @ 25V | 3.6 Ω @ 500mA, 10V | 4.5V @ 1mA | 3.6A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA80N075L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3 | IXYS | $11.68 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFR20N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $10.14 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | No SVHC | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTT11P50 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 750mOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFR30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n60p-datasheets-4214.pdf | 600V | 30A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 20ns | 25 ns | 75 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 80A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 3820pF @ 25V | 250m Ω @ 15A, 10V | 5V @ 4mA | 15A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFT60N65X2HV | IXYS | $12.18 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft60n65x2hv-datasheets-4251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 780W Tc | N-Channel | 6300pF @ 25V | 52m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 108nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 26A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 24A | 104A | 0.2Ohm | 500V | N-Channel | 4200pF @ 25V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH60N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-247-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ30N50L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTR200N10P | IXYS | $14.87 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr200n10p-datasheets-4384.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 120A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | 400A | 0.008Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFR24N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n90p-datasheets-4422.pdf | ISOPLUS247™ | 3 | 30 Weeks | yes | UL RECOGNIZED, AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 230W Tc | 48A | 0.46Ohm | 1000 mJ | N-Channel | 7200pF @ 25V | 460m Ω @ 12A, 10V | 6.5V @ 1mA | 13A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFH150N20T | IXYS | $69.00 |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | TO-247AD | 375A | 0.015Ohm | 1500 mJ | N-Channel | 11700pF @ 25V | 15m Ω @ 75A, 10V | 5V @ 4mA | 150A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| MCB60I1200TZ-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~175°C TJ | SiCFET (Silicon Carbide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | 1.2kV | N-Channel | 2790pF @ 1000V | 34m Ω @ 50A, 20V | 4V @ 15mA | 90A Tc | 160nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH13N50 | IXYS | $3.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n50-datasheets-7571.pdf | 500V | 13A | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 32 ns | 76 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 52A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 13A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTY26P10T | IXYS | $1.42 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 150W | 1 | Other Transistors | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||
| IXFA7N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 300W Tc | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA180N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 480W Tc | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP36N20X3M | IXYS | $3.89 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp36n20x3m-datasheets-9803.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N120P | IXYS | $5.00 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 13Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 29 ns | 78 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 86W Tc | 3A | 1.2kV | N-Channel | 666pF @ 25V | 13 Ω @ 500mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFP270N06T3 | IXYS |
Min: 1 Mult: 1 |
download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-220-3 | 26 Weeks | yes | unknown | 270mA | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP20N50P3 | IXYS | $4.21 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-220-3 | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | TO-220AB | 20A | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXKP20N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-220-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXKH20N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-3P-3 Full Pack | 3 | 32 Weeks | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 0.2Ohm | 435 mJ | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTP300N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf | TO-220-3 | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 300A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 480W Tc | TO-220AB | 900A | 0.0025Ohm | 600 mJ | N-Channel | 10700pF @ 25V | 2.5m Ω @ 500mA, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V |
