Products
Manufacturer
RFQ
NEWS
ContactIXYS(5222)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Diode Element Material | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSEP60-03A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dsep6003a-datasheets-1879.pdf | TO-247-2 | 2 | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 1 | Rectifier Diodes | Not Qualified | 1.71V | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 300V | 60A | 700A | 1 | 650μA @ 300V | 1.71V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDO1200-18N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | Y1-CU | MDO1200 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.8kV | 1800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP80N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfp80n25x3-datasheets-1727.pdf | TO-220-3 | 19 Weeks | yes | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA180N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n10t-datasheets-2185.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 6.4MOhm | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | 450A | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TUB | IXYS | $71.19 |
Min: 1 Mult: 1 |
download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA90N20X3 | IXYS | $4.55 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa90n20x3-datasheets-9879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N20T | IXYS | $14.28 |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20t-datasheets-4838.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1150W Tc | 470A | 0.011Ohm | 3000 mJ | N-Channel | 19600pF @ 25V | 11m Ω @ 60A, 10V | 5V @ 4mA | 170A Tc | 265nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 26 Weeks | 3 | Single | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN22N100L | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn22n100l-datasheets-9234.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 600mOhm | 4 | yes | UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 36 ns | 35ns | 50 ns | 80 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 700W Tc | 50A | 1500 mJ | 1kV | N-Channel | 7050pF @ 25V | 600m Ω @ 11A, 20V | 5.5V @ 250μA | 22A Tc | 270nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFN70N100X | IXYS | $56.50 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n100x-datasheets-2376.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 1200W Tc | N-Channel | 9150pF @ 25V | 89m Ω @ 35A, 10V | 6V @ 8mA | 56A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP02N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp02n120p-datasheets-4830.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 33W Tc | TO-220AB | 0.2A | 0.6A | 0.075Ohm | 40 mJ | N-Channel | 104pF @ 25V | 75 Ω @ 100mA, 10V | 4V @ 100μA | 200mA Tc | 4.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N15X4-7 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta130n15x4-datasheets-5545.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15 Weeks | 150V | 400W Tc | N-Channel | 4770pF @ 25V | 8m Ω @ 65A, 10V | 4.5V @ 250μA | 130A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH11P50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | -500V | -11A | TO-247-3 | Lead Free | 3 | 17 Weeks | 750MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | Other Transistors | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | TO-247AD | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX210P10T | IXYS | $25.77 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtx210p10t-datasheets-6326.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1040W Tc | 800A | 0.0075Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 7.5m Ω @ 105A, 10V | 4.5V @ 250μA | 210A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA80N25X3TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK200N10P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk200n10p-datasheets-7141.pdf | TO-264-3, TO-264AA | Lead Free | 28 Weeks | No SVHC | 3 | Single | 800W | TO-264 (IXTK) | 7.6nF | 35ns | 90 ns | 150 ns | 200A | 20V | 100V | 5V | 800W Tc | 7.5mOhm | 100V | N-Channel | 7600pF @ 25V | 7.5mOhm @ 100A, 10V | 5V @ 500μA | 200A Tc | 240nC @ 10V | 7.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP4N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n70x2m-datasheets-0341.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 700V | 30W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB132N50P3 | IXYS | $20.22 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb132n50p3-datasheets-1416.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | No SVHC | 264 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 44 ns | 9ns | 8 ns | 72 ns | 132A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1890W Tc | 330A | 0.039Ohm | 3000 mJ | 500V | N-Channel | 18600pF @ 25V | 39m Ω @ 66A, 10V | 5V @ 8mA | 132A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85x-datasheets-4389.pdf | TO-247-3 | 19 Weeks | yes | 850V | 460W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 500mA, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA100N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 150W Tc | N-Channel | 2690pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 100A Tc | 25.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY44N10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 100V | 130W Tc | N-Channel | 1262pF @ 25V | 30m Ω @ 22A, 10V | 4.5V @ 25μA | 44A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA460P2 | IXYS |
Min: 1 Mult: 1 |
download | PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtq460p2-datasheets-2745.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | unknown | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N50Q3 | IXYS | $11.38 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50q3-datasheets-3628.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 250ns | 26 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | TO-247AD | 90A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3200pF @ 25V | 200m Ω @ 15A, 10V | 6.5V @ 4mA | 30A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK140N30P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.04kW | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 140A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 0.024Ohm | 5000 mJ | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 500μA | 140A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR64N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n60q3-datasheets-3760.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 568W | 1 | FET General Purpose Power | R-PSIP-T3 | 45 ns | 300ns | 50 ns | 42A | 30V | SILICON | ISOLATED | SWITCHING | 568W Tc | 250A | 0.104Ohm | 3000 mJ | 600V | N-Channel | 9930pF @ 25V | 104m Ω @ 32A, 10V | 6.5V @ 4mA | 42A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH32N65X | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-247-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 600V | 1.04kW Tc | N-Channel | 6300pF @ 25V | 145m Ω @ 25A, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT26N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 0.23Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N110 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSFM-T3 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | TO-220AB | 3A | 12A | 4Ohm | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36P15P | IXYS | $30.85 |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp36p15p-datasheets-7043.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 90A | 0.11Ohm | 1500 mJ | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V |
