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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | Threshold Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MDD600-16N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-mdd60018n1-datasheets-7995.pdf | WC-500 | 500 | MD*600 | WC-500 | Standard Recovery >500ns, > 200mA (Io) | 1.6kV | Standard | 1.6kV | 600A | 1600V | 50mA @ 1600V | 880mV @ 500A | 600A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI30-06A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei3006a-datasheets-7846.pdf&product=ixys-dsei3006a-5980011 | 600V | 37A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 125W | 1 | Rectifier Diodes | 37A | 37A | 1.6V | 320A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 320A | 600V | 50 ns | 50 ns | Standard | 600V | 37A | 1 | 100μA @ 600V | 1.6V @ 37A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI12-06AS-TUB | IXYS | $2.35 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 50μA @ 600V | 1.7V @ 16A | 14A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI12-06A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei1206a-datasheets-0561.pdf&product=ixys-dsei1206a-5997878 | 300V | 14A | TO-220-2 | 10.66mm | 9.15mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 62W | 1 | Rectifier Diodes | 14A | 14A | 1.7V | 110A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 50μA | 600V | 110A | 600V | 50 ns | 50 ns | Standard | 600V | 14A | 1 | 50μA @ 600V | 1.7V @ 16A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA20IM800PC-TRL | IXYS | $2.56 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dla20im800pctrl-datasheets-3831.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 4pF @ 400V 1MHz | 800V | 10μA @ 800V | 1.2V @ 20A | 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA10IM100UC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50W | 100V | 200μA | TO-252AA | Schottky | 200A | 1 | 10A | 68pF @ 24V 1MHz | 100V | 200μA @ 100V | 890mV @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP12-12AZ-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 95W | 1200V | 100μA | 40ns | Standard | 90A | 1 | 12A | 5pF @ 600V 1MHz | 1200V | 100μA @ 1200V | 2.62V @ 15A | 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG10I600PM | IXYS | $6.39 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhg10i600pm-datasheets-5007.pdf | TO-220-3 Full Pack | 15.8mm | 20.3mm | 4.9mm | 2 | 28 Weeks | 2.299997g | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | 10A | 100A | 15μA | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 15μA | 600V | TO-220AC | 35 ns | 35 ns | Standard | 600V | 10A | 1 | 15μA @ 600V | 2.35V @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10IM1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG60I1200HA | IXYS | $43.62 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-dhg60i1200ha-datasheets-5732.pdf | TO-247-3 | Lead Free | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 3.06V | 430A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125μA | 500A | 1.2kV | 200 ns | 75 ns | Standard | 1.2kV | 60A | 1 | 1200V | 125μA @ 1200V | 2.32V @ 60A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG20I600HA | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhg20i600ha-datasheets-6422.pdf | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | 2 | 20 Weeks | 6.500007g | No SVHC | 3 | yes | EAR99 | FREEWHEELING, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 20A | 2.31V | 150A | 25μA | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 140W | 150A | 30μA | 600V | 150A | 35 ns | 35 ns | Standard | 600V | 20A | 1 | 25μA @ 600V | 2.24V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-dna30e2200pc-datasheets-6408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | ANODE | HIGH VOLTAGE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 40μA | Standard | 2.2kV | 30A | 340A | 1 | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1411LC320 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | Standard | 3200V | 30mA @ 3200V | 2V @ 2870A | 1411A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W3842MC240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W54 | Standard Recovery >500ns, > 200mA (Io) | 34μs | Standard | 2400V | 50mA @ 2400V | 1.2V @ 3000A | 3842A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W3477MC360 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W54 | Standard Recovery >500ns, > 200mA (Io) | 38μs | Standard | 3600V | 100mA @ 3600V | 1.34V @ 3000A | 3470A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W6262ZC240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | W7 | Standard Recovery >500ns, > 200mA (Io) | Standard | 2400V | 150mA @ 2400V | 1.18V @ 6800A | 6262A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W108CED220 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 2200V | 10815A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M0437WC080 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W1 | Standard Recovery >500ns, > 200mA (Io) | Standard | 80V | 20mA @ 80V | 1.47V @ 635A | 437A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DCG17P1200HR | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | TO-247-3 | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1500pF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 20A | 18A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-018A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dgsk40018a-datasheets-7890.pdf | TO-220-2 | 2 | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 1 | Not Qualified | R-PSFM-T2 | 30A | 2mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | TO-220AC | Schottky | 180V | 23A | 1 | 0.014μs | 2mA @ 180V | 1V @ 7.5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA9-18F | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-dsa916f-datasheets-5603.pdf | DO-203AA, DO-4, Stud | Lead Free | 1 | 6 Weeks | No SVHC | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.4V | 250A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3mA | 1.8kV | 265A | 1.8kV | Avalanche | 1.8kV | 11A | 1 | 1800V | 3mA @ 1800V | 1.4V @ 36A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP30-03A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dsep3003a-datasheets-1825.pdf | TO-247-2 | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 300A | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 170W | 250μA | 300V | TO-247AD | 25 ns | 25 ns | Standard | 300V | 30A | 1 | 250μA @ 300V | 1.55V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB2I40SB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dsb2i40sb-datasheets-6497.pdf | DO-214AA, SMB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | 75A | 100μA | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 2A | 1 | 2A | 100μA @ 40V | 500mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH200N10T | IXYS | $1.35 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n10t-datasheets-1667.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 5.5MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31ns | 34 ns | 45 ns | 200A | SILICON | DRAIN | SWITCHING | 550W Tc | 500A | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | 1kV | 12A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 1.05Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 62 ns | 12A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 300W Tc | TO-247AD | 48A | 1kV | N-Channel | 4000pF @ 25V | 4.5 V | 1.05 Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN66N85X | IXYS | $35.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfn66n85x-datasheets-2691.pdf | SOT-227-4, miniBLOC | 19 Weeks | yes | unknown | 65A | 850V | 830W Tc | N-Channel | 8900pF @ 25V | 65m Ω @ 33A, 10V | 5.5V @ 8mA | 65A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N200P3HVTRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH72N30X3 | IXYS | $11.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-247-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH52N30Q | IXYS | $24.17 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | 300V | 52A | TO-247-3 | Contains Lead | 3 | 8 Weeks | 6g | No SVHC | 60mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 3 | Single | 360W | 1 | FET General Purpose Power | 60ns | 25 ns | 80 ns | 52A | 20V | 300V | SILICON | DRAIN | 4V | 360W Tc | 250 ns | 208A | 300V | N-Channel | 5300pF @ 25V | 4 V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF02N450 | IXYS | $36.41 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtf02n450-datasheets-8292.pdf | i4-Pac™-5 (3 Leads) | 28 Weeks | 3 | unknown | Single | 78W | 1 | FET General Purpose Power | 48ns | 143 ns | 28 ns | 200mA | 20V | 4500V | 78W Tc | 0.2A | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V |
