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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA80N075L2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 357W Tc | N-Channel | 3600pF @ 25V | 24m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N60P3 | IXYS | $11.68 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFR20N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $10.14 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt100n25p-datasheets-5585.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | No SVHC | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 26ns | 28 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 250A | 2000 mJ | 250V | N-Channel | 6300pF @ 25V | 24m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXTT11P50 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixth11p50-datasheets-5654.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 750mOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 27ns | 35 ns | 35 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 44A | -500V | P-Channel | 4700pF @ 25V | 750m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFR30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n60p-datasheets-4214.pdf | 600V | 30A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 20ns | 25 ns | 75 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 80A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 3820pF @ 25V | 250m Ω @ 15A, 10V | 5V @ 4mA | 15A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXFT60N65X2HV | IXYS | $12.18 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft60n65x2hv-datasheets-4251.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 650V | 780W Tc | N-Channel | 6300pF @ 25V | 52m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 108nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n50-datasheets-4223.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 26A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 24A | 104A | 0.2Ohm | 500V | N-Channel | 4200pF @ 25V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFH60N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n60x-datasheets-4330.pdf | TO-247-3 | 19 Weeks | 60A | 600V | 890W Tc | N-Channel | 5800pF @ 25V | 55m Ω @ 30A, 10V | 4.5V @ 8mA | 60A Tc | 143nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ30N50L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTR200N10P | IXYS | $14.87 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr200n10p-datasheets-4384.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 120A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | 400A | 0.008Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFR24N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n90p-datasheets-4422.pdf | ISOPLUS247™ | 3 | 30 Weeks | yes | UL RECOGNIZED, AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 230W Tc | 48A | 0.46Ohm | 1000 mJ | N-Channel | 7200pF @ 25V | 460m Ω @ 12A, 10V | 6.5V @ 1mA | 13A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFH150N20T | IXYS | $69.00 |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n20t-datasheets-4462.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | TO-247AD | 375A | 0.015Ohm | 1500 mJ | N-Channel | 11700pF @ 25V | 15m Ω @ 75A, 10V | 5V @ 4mA | 150A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| MCB60I1200TZ-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~175°C TJ | SiCFET (Silicon Carbide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | 1.2kV | N-Channel | 2790pF @ 1000V | 34m Ω @ 50A, 20V | 4V @ 15mA | 90A Tc | 160nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH13N50 | IXYS | $3.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n50-datasheets-7571.pdf | 500V | 13A | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 32 ns | 76 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 52A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 13A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTY26P10T | IXYS | $1.42 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 150W | 1 | Other Transistors | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||
| IXFA7N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 300W Tc | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA180N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 480W Tc | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU06N120P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 600mA | 1200V | N-Channel | 600mA Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH270N04T4 | IXYS | $2.77 |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-247-3 | 28 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP60N20T | IXYS |
Min: 1 Mult: 1 |
download | Trench™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-220-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | TO-220AB | 150A | 0.04Ohm | 700 mJ | 200V | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFA5N100P | IXYS | $7.16 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 250W Tc | 5A | 10A | 300 mJ | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTQ86N20T | IXYS | $12.11 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp86n20t-datasheets-0035.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 480W Tc | 260A | 0.029Ohm | 1000 mJ | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTP2R4N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta2r4n120p-datasheets-6875.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 32 ns | 70 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 125W Tc | TO-220AB | 6A | 200 mJ | 1.2kV | N-Channel | 1207pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFA3N120-TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n120-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 3A | 1200V | 200W Tc | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta230n075t27-datasheets-0484.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFP24N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-220-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n60x-datasheets-4513.pdf | TO-264-3, TO-264AA | 19 Weeks | 90A | 600V | 1100W Tc | N-Channel | 8500pF @ 25V | 38m Ω @ 45A, 10V | 4.5V @ 8mA | 90A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N90 | IXYS | $1.01 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | 900V | 12A | TO-247-3 | Lead Free | 3 | 900mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 12ns | 18 ns | 51 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 900V | N-Channel | 4200pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH44N50Q3 | IXYS | $16.78 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V |
