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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Isolation Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Max Repetitive Reverse Voltage (Vrrm) | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH13N110 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth13n110-datasheets-5222.pdf | 1.1kV | 13A | TO-247-3 | Lead Free | 3 | 8 Weeks | 920mOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 21ns | 36 ns | 80 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 360W Tc | TO-247AD | 52A | 1.1kV | N-Channel | 5650pF @ 25V | 920m Ω @ 500mA, 10V | 4.5V @ 250μA | 13A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N20Q | IXYS | $2.28 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | 200V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 28MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC24N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50-datasheets-8452.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 84A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 21A Tc | 135nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N55 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk48n55-datasheets-8541.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 550V | 560W Tc | 192A | 0.11Ohm | N-Channel | 8900pF @ 25V | 110m Ω @ 24A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK60N25Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN80N48 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n48-datasheets-8672.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 320A | 6000 mJ | 480V | N-Channel | 9890pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 8mA | 80A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA54N30T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 54A | 300V | N-Channel | 54A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUC200N055 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixuc200n055-datasheets-8753.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 300W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 115ns | 155 ns | 230 ns | 200A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 300W Tc | 0.0051Ohm | 500 mJ | 55V | N-Channel | 5.1m Ω @ 100A, 10V | 4V @ 2mA | 200A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP264 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp264-datasheets-9257.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | No | 3 | Single | 280W | 1 | FET General Purpose Power | 99ns | 92 ns | 110 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 280W Tc | TO-247AD | 0.075Ohm | 250V | N-Channel | 4800pF @ 25V | 75m Ω @ 23A, 10V | 4V @ 250μA | 38A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV52N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | TO-220-3, Short Tab | Lead Free | 3 | 66MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDM100-0045SP | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fdm1000045sp-datasheets-4322.pdf | i4-Pac™-5 | 5 | 5 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | SINGLE | 260 | 5 | 35 | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 0.0072Ohm | N-Channel | 7.2m Ω @ 80A, 10V | 4V @ 1mA | 100A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN66N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfn66n50q2-datasheets-4366.pdf | SOT-227-4, miniBLOC | 4 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 16ns | 12 ns | 60 ns | 66A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 6800pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 199nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN90N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfn90n30-datasheets-4509.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 33MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 560W | 1 | Not Qualified | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560W Tc | 360A | 3000 mJ | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTT12N140 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtt12n140-datasheets-8289.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 150°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1400V | 1400V | 890W Tc | 40A | 2Ohm | 750 mJ | N-Channel | 3720pF @ 25V | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH32N48Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 480V | 360W Tc | N-Channel | 5200pF @ 25V | 130m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT74N20Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/ixys-ixft74n20q-datasheets-3300.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX24N100F | IXYS | $14.42 |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk24n100f-datasheets-3062.pdf | TO-247-3 | 3 | 10 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | R-PSIP-T3 | 18ns | 11 ns | 52 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 0.0039Ohm | 3000 mJ | 1kV | N-Channel | 6600pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM42N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 42A | 168A | 0.06Ohm | N-Channel | 4400pF @ 25V | 60m Ω @ 21A, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM1766 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN409 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Yes | FET Driver (External FET) | IXDN409 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN430YI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDN430YI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP72N30X3M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n30x3m-datasheets-8413.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 300V | 36W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH220N20X3 | IXYS | $17.02 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-247-3 | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ26N50P | IXYS | $6.16 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | TO-3P-3, SC-65-3 | Lead Free | 3 | 17 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ140N20X3 | IXYS | $11.86 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh140n20x3-datasheets-4865.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 200V | 520W Tc | N-Channel | 7660pF @ 25V | 9.6m Ω @ 70A, 10V | 4.5V @ 4mA | 140A Tc | 127nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK120N65X2 | IXYS | $36.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtx120n65x2-datasheets-2474.pdf | TO-264-3, TO-264AA | 15 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 13600pF @ 25V | 24m Ω @ 60A, 10V | 4.5V @ 8mA | 120A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ72N20X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3-datasheets-4593.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 200V | 320W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG60IM300PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Cut Tape | SMD/SMT | 150°C | -55°C | AVALANCHE | RoHS Compliant | /files/ixys-dpg60im300pc-datasheets-6897.pdf | TO-263-3 | Lead Free | 2 | 1.59999g | No SVHC | 3 | yes | EAR99 | FREEWHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 60A | 1.1V | 550A | 350μA | CATHODE | FAST SOFT RECOVERY | SILICON | 335W | 550A | 300V | 35 ns | 35 ns | RECTIFIER DIODE | 300V | 60A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38P600LB | IXYS |
Min: 1 Mult: 1 |
Surface Mount | Bulk | RoHS Compliant | SMD/SMT | yes | 50A | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP8-12AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-4 | 1.2kV | 11A |
