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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH10N100D | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-247-3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFQ23N60Q | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 23A | 600V | N-Channel | 23A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUV170N075S | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | PLUS-220SMD | 220 | 300W | Single | 300W | 175A | 5.3mOhm | 75V | N-Channel | 175A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT16N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 1200V | 660W Tc | N-Channel | 6900pF @ 25V | 950m Ω @ 8A, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n60p3-datasheets-4547.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | FET General Purpose Power | 48 ns | 87 ns | 48A | 30V | 600V | 540W Tc | N-Channel | 13100pF @ 25V | 76m Ω @ 40A, 10V | 5V @ 8mA | 48A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK44N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n50-datasheets-7596.pdf | 500V | 44A | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 176A | 0.12Ohm | 500V | N-Channel | 8400pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA102N15T | IXYS | $4.19 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta102n15t-datasheets-9411.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH74N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | THROUGH-HOLE | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-220AB | 40A | 0.36Ohm | 300 mJ | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 540W Tc | N-Channel | 3230pF @ 25V | 100m Ω @ 17A, 10V | 5V @ 2.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA76N15T2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp76n15t2-datasheets-5436.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 76A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 350W Tc | TO-263AA | 200A | 0.02Ohm | 500 mJ | N-Channel | 5800pF @ 25V | 20m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA44N25X3 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 250V | 240W Tc | N-Channel | 2200pF @ 25V | 40m Ω @ 22A, 10V | 4.5V @ 1mA | 44A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 24 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 21 ns | 43 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 327W Tc | TO-247AD | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFP102N15T | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfa102n15t-datasheets-0109.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 102A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | TO-220AB | 300A | 0.018Ohm | 750 mJ | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFA72N30X3-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 390W Tc | N-Channel | 5400pF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP30N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n60x-datasheets-0441.pdf | TO-220-3 | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ26P20P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtp26p20p-datasheets-1592.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 70A | 0.17Ohm | 1500 mJ | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTQ72N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 72A | 300V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N65X2-4 | IXYS | $14.03 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x24-datasheets-0591.pdf | TO-247-4 | 19 Weeks | compliant | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 38m Ω @ 500mA, 10V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR4N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr4n100q-datasheets-0626.pdf | ISOPLUS247™ | 3 | 36 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 80W | 1 | Not Qualified | 15ns | 18 ns | 32 ns | 3.5A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 80W Tc | 16A | 3Ohm | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1.5mA | 3.5A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTX170P10P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx170p10p-datasheets-0670.pdf | TO-247-3 | 3 | 28 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 170A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 890W Tc | 510A | 0.012Ohm | 3500 mJ | -100V | P-Channel | 12600pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 1mA | 170A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTK550N055T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk550n055t2-datasheets-0709.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.6m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FMD40-06KC | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-fmd4006kc-datasheets-0754.pdf | i4-Pac™-5 | 5 | 32 Weeks | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 280W | 1 | FET General Purpose Power | Not Qualified | 30ns | 10 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 0.07Ohm | 600V | N-Channel | 70m Ω @ 20A, 10V | 3.9V @ 2.7mA | 38A Tc | 250nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFX20N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx20n120-datasheets-0789.pdf | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 750mOhm | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 780W | 1 | 45ns | 20 ns | 75 ns | 20A | 30V | 1.2kV | SILICON | DRAIN | SWITCHING | 1200V | 4.5V | 780W Tc | 300 ns | 80A | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 4.5 V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FMD47-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf | ISOPLUSi5-Pak™ | 5 | 32 Weeks | 5 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFR27N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr27n80q-datasheets-0859.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK48N60Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx48n60q3-datasheets-3687.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1kW | 1 | FET General Purpose Power | 37 ns | 300ns | 40 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 1000W Tc | 120A | 0.14Ohm | 2000 mJ | 600V | N-Channel | 7020pF @ 25V | 140m Ω @ 24A, 10V | 6.5V @ 4mA | 48A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFR12N100Q | IXYS | $2.81 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr12n100q-datasheets-0945.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 23ns | 15 ns | 40 ns | 10A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 250W Tc | 48A | 1kV | N-Channel | 2900pF @ 25V | 1.1 Ω @ 6A, 10V | 5.5V @ 4mA | 10A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFL44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n60-datasheets-0989.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSIP-T3 | 42 ns | 55ns | 45 ns | 110 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 500W Tc | 176A | 0.13Ohm | 3000 mJ | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 41A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN40N90P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n90p-datasheets-1026.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | 33A | 30V | SILICON | ISOLATED | SWITCHING | 695W Tc | 80A | 900V | N-Channel | 14000pF @ 25V | 210m Ω @ 20A, 10V | 6.5V @ 1mA | 33A Tc | 230nC @ 10V | 10V | ±30V |
