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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFX220N17T2 | IXYS | $12.48 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfx220n17t2-datasheets-4243.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1250W Tc | 550A | 0.0063Ohm | 2000 mJ | N-Channel | 31000pF @ 25V | 6.3m Ω @ 60A, 10V | 5V @ 8mA | 220A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFR44N50P | IXYS | $14.48 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n50p-datasheets-4277.pdf | 500V | 44A | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 150MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | Not Qualified | 27ns | 18 ns | 70 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 208W Tc | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 150m Ω @ 22A, 10V | 5V @ 4mA | 24A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTX660N04T4 | IXYS |
Min: 1 Mult: 1 |
download | 28 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH48N15 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth48n15-datasheets-4350.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 20ns | 17 ns | 68 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AD | 192A | 1000 mJ | 150V | N-Channel | 3200pF @ 25V | 32m Ω @ 500mA, 10V | 48A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTP30N25L2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 24 Weeks | compliant | 250V | 355W Tc | N-Channel | 3200pF @ 25V | 140m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT23N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 45 ns | 23A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 92A | 0.32Ohm | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 23A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFR58N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr58n20-datasheets-4446.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 300W Tc | 232A | 0.04Ohm | 1000 mJ | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXUV170N075 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3, Short Tab | 220 | 300W | Single | 300W | 175A | 5mOhm | 75V | N-Channel | 175A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR9N80Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 800V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf | 900V | 6A | TO-247-3 | Lead Free | 3 | 1.8Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 35 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 6A | 24A | N-Channel | 2600pF @ 25V | 2 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFA130N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | 350A | 0.0091Ohm | 750 mJ | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 1mA | 130A Tc | 104nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||
| IXFP36N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa36n30p3-datasheets-6952.pdf | TO-220-3 | 26 Weeks | 36A | 300V | 347W Tc | N-Channel | 2040pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP13N60C5M | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5m-datasheets-9720.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 32W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6.5A | 20V | SILICON | SWITCHING | TO-220AB | 0.3Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 300m Ω @ 6.6A, 10V | 3.5V @ 440μA | 6.5A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA300N04T2 | IXYS | $27.26 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 300A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 900A | 0.0025Ohm | 600 mJ | 40V | N-Channel | 10700pF @ 25V | 2.5m Ω @ 500mA, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 300W Tc | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N110 | IXYS | $30.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 4.5Ohm | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | 3A | 12A | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP14N55X2 | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH340N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtp340n04t4-datasheets-9887.pdf | TO-247-3 | 17 Weeks | yes | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ32P20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-3P-3, SC-65-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 32A | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA90N20X3TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ130N15T | IXYS | $7.33 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq130n15t-datasheets-0505.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 750W Tc | 0.012Ohm | 1200 mJ | N-Channel | 9800pF @ 25V | 12m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTT96N20P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 200V | 600W Tc | N-Channel | 4800pF @ 25V | 24m Ω @ 48A, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N100 | IXYS | $0.82 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-247-3 | Lead Free | 3 | 1.05Ohm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 62 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 48A | 1kV | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK16N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfk16n90q-datasheets-0642.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 21 ns | 24ns | 14 ns | 56 ns | 16A | 20V | SILICON | DRAIN | 360W Tc | 64A | 0.65Ohm | 1500 mJ | 900V | N-Channel | 4000pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 16A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA4N150HV-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1500V | 280W Tc | N-Channel | 1576pF @ 25V | 6 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 44.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX600N04T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx600n04t2-datasheets-0723.pdf | TO-247-3 | 3 | 28 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 40V | 600A | 40 ns | 20ns | 250 ns | 90 ns | 600A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.5m Ω @ 100A, 10V | 3.5V @ 250μA | 600A Tc | 590nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTK160N20 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtk160n20-datasheets-0759.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 13MOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730W | 1 | Not Qualified | 38ns | 30 ns | 150 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 730W Tc | 640A | 4000 mJ | 200V | N-Channel | 12900pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 250μA | 160A Tc | 415nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFT18N100Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 37 ns | 32ns | 13 ns | 40 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 830W Tc | 60A | 0.66Ohm | 1500 mJ | 1kV | N-Channel | 4890pF @ 25V | 660m Ω @ 9A, 10V | 6.5V @ 4mA | 18A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXKT70N60C5-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | 600V | N-Channel | 68A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN36N50 | IXYS | $150.99 |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | SOT-227-4, miniBLOC | Lead Free | 4 | 18 Weeks | No SVHC | 120mOhm | 3 | yes | EAR99 | 8541.29.00.95 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 36A | 500V | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 400W Tc | 120MOhm | N-Channel | 5 V | 4V @ 20mA | 36A Tc |
