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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH16N50D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n50d2-datasheets-4362.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 695W Tc | 0.24Ohm | N-Channel | 5250pF @ 25V | 240m Ω @ 8A, 0V | 16A Tc | 199nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTT60N10 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtt60n10-datasheets-4393.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 18 ns | 70 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 80A | 320A | 0.02Ohm | 1500 mJ | 100V | N-Channel | 3200pF @ 25V | 20m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTH75N10L2 | IXYS | $14.05 |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt75n10l2-datasheets-3647.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 75A | 20V | SILICON | DRAIN | AMPLIFIER | 400W Tc | 225A | 0.021Ohm | 2500 mJ | 100V | N-Channel | 8100pF @ 25V | 21m Ω @ 500mA, 10V | 4.5V @ 250μA | 75A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFT50N30Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n30q3-datasheets-1982.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 80MOhm | 3 | EAR99 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 250ns | 24 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 1500 mJ | 300V | N-Channel | 3165pF @ 25V | 80m Ω @ 25A, 10V | 6.5V @ 4mA | 50A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTL2N470 | IXYS | $89.01 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtl2n470-datasheets-4540.pdf | ISOPLUSi5-Pak™ | 24 Weeks | compliant | 4700V | 220W Tc | N-Channel | 6860pF @ 25V | 20 Ω @ 1A, 10V | 6V @ 250μA | 2A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH22N55 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n55-datasheets-7589.pdf | 550V | 22A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 88A | 0.27Ohm | 550V | N-Channel | 4200pF @ 25V | 150ns | 100ns | 270m Ω @ 11A, 10V | 4.5V @ 4mA | 22A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTA3N100P | IXYS |
Min: 1 Mult: 1 |
download | PolarVHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100p-datasheets-9405.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTA230N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 480W Tc | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA230N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 75V | 480W Tc | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44N30T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 44A | 300V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP54N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 54A | 300V | N-Channel | 54A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH90N15T | IXYS | $2.38 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | TO-247AD | 250A | 0.02Ohm | 0.75 mJ | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTH62N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 62A | 250V | N-Channel | 62A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA260N055T2-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta260n055t27-datasheets-0382.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFQ24N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH98N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 98A | 200V | N-Channel | 98A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP34N65X2 | IXYS | $6.52 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth34n65x2-datasheets-6886.pdf | TO-220-3 | 15 Weeks | compliant | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKC15N60C5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkc15n60c5-datasheets-0588.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 165MOhm | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 114W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 15A | 20V | SILICON | ISOLATED | SWITCHING | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 900μA | 15A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH12N100Q | IXYS | $5.55 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-247-3 | 300W | Single | 300W | 12A | 1000V | 1.05Ohm | 1kV | N-Channel | 12A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP230N075T2 | IXYS | $6.09 |
Min: 1 Mult: 1 |
download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfa230n075t2-datasheets-0343.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | TO-220AB | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | ||||||||||||||||||||||||||||
| IXTR40P50P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr40p50p-datasheets-0706.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 312W Tc | 120A | 0.26Ohm | P-Channel | 11500pF @ 25V | 260m Ω @ 20A, 10V | 4V @ 1mA | 22A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFP7N80PM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80pm-datasheets-0750.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSFM-T3 | 55 ns | 3.5A | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 300 mJ | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 3.5A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFR230N20T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr230n20t-datasheets-0787.pdf | TO-247-3 | 3 | 30 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 156A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 600W Tc | 630A | 0.008Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 8mA | 156A Tc | 378nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFB120N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb120n50p2-datasheets-3471.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 264 | AVALANCHE RATED | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 120A | 30V | SILICON | DRAIN | SWITCHING | 1890W Tc | 300A | 0.043Ohm | 4000 mJ | 500V | N-Channel | 19000pF @ 25V | 43m Ω @ 500mA, 10V | 5V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFE48N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 192A | 0.11Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 110m Ω @ 24A, 10V | 4V @ 4mA | 41A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFB210N20P | IXYS | $34.33 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb210n20p-datasheets-0910.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | 264 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.5kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | 20V | SILICON | DRAIN | SWITCHING | 1500W Tc | 600A | 0.0105Ohm | 4000 mJ | 200V | N-Channel | 18600pF @ 25V | 10.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFN100N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n65x2-datasheets-0941.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 650V | 595W Tc | N-Channel | 10800pF @ 25V | 30m Ω @ 50A, 10V | 5V @ 4mA | 78A Tc | 183nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR26N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n120p-datasheets-0984.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 55ns | 58 ns | 76 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 320W Tc | 60A | 0.5Ohm | 1500 mJ | 1.2kV | N-Channel | 14000pF @ 25V | 500m Ω @ 13A, 10V | 6.5V @ 1mA | 15A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFT80N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft80n085-datasheets-1019.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 85A | 320A | 0.009Ohm | 2500 mJ | 85V | N-Channel | 4800pF @ 25V | 9m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V |
