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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Voltage | Turn On Delay Time | RMS Current (Irms) | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Leakage Current (Max) | Threshold Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Peak Reverse Current | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Channel Type | Non-Repetitive Pk On-state Cur | Repetitive Peak Reverse Voltage | Voltage @ Pmpp | Power (Watts) - Max | Current @ Pmpp | Voltage - Open Circuit | Current - Short Circuit (Isc) | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Voltage - Peak Reverse (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Desc. of Quick-Connects | Voltage - Collector Emitter Breakdown (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Desc. of Screw Terminals | Vce(on) (Max) @ Vge, Ic | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Nominal Vgs | Embedded | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Mounting | Package Height | Package Length | Package Width | PCB changed | HTS | Maximum Power Dissipation (mW) | Military | Maximum Drain Source Voltage (V) | Maximum Gate Source Voltage (V) | Channel Mode | Number of Elements per Chip | Maximum Continuous Drain Current (A) | Maximum Drain Source Resistance (mOhm) | Typical Input Capacitance @ Vds (pF) | Typical Reverse Transfer Capacitance @ Vds (pF) | Typical Output Capacitance @ Vds (pF) | Typical Gate Charge @ Vgs (nC) | Typical Turn-Off Delay Time (ns) | Typical Turn-On Delay Time (ns) |
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| IXFH80N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n10-datasheets-8709.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 63ns | 26 ns | 90 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0125Ohm | 2500 mJ | 100V | N-Channel | 4800pF @ 25V | 12.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC75N10 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtc75n10-datasheets-8873.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 0.02Ohm | 100V | N-Channel | 4500pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 250μA | 72A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT80N10Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n10q-datasheets-8192.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 70ns | 30 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 320A | 0.015Ohm | 1500 mJ | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH23N60Q | IXYS | $17.48 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf | TO-247-3 | 3 | 6g | No SVHC | 320mOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20ns | 20 ns | 45 ns | 23A | 30V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 400W Tc | TO-247AD | 250 ns | 92A | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 4.5 V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 23A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK15N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n30-datasheets-5288.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX74N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk74n50p2-datasheets-4293.pdf | TO-247-3 | 3 | 247 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.4kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 74A | 30V | SILICON | DRAIN | SWITCHING | 1400W Tc | 185A | 0.077Ohm | 3000 mJ | 500V | N-Channel | 9900pF @ 25V | 77m Ω @ 500mA, 10V | 5V @ 4mA | 74A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN24N100F | IXYS | $129.04 |
Min: 1 Mult: 1 |
download | HiPerRF™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn24n100f-datasheets-3060.pdf | SOT-227-4, miniBLOC | 10 Weeks | No SVHC | 4 | 600W | SOT-227B | 18ns | 11 ns | 52 ns | 24A | 20V | 1000V | 600W Tc | 390mOhm | 1kV | N-Channel | 6600pF @ 25V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD24N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR20N80Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH35N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30q-datasheets-3509.pdf | TO-247-3 | 300V | 300W Tc | N-Channel | 4800pF @ 25V | 100m Ω @ 17.5A, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| T-TD1R4N60P 11 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTD3N60P-2J | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Die | 600V | 70W Tc | N-Channel | 411pF @ 25V | 2.9 Ω @ 1.5A, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI430CI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDI430CI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDBD4410 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-gdbd4410-datasheets-6153.pdf | 52 | Yes | High and Low Side Driver (External FET) | IXBD4410, IXBD4411 | Board(s) | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100 | IXYS | $0.94 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf | 1kV | 6A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 180W Tc | 250 ns | 6A | 24A | 1kV | N-Channel | 2600pF @ 25V | 4.5 V | 2 Ω @ 500mA, 10V | 4.5V @ 2.5mA | 6A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK66N85X | IXYS | $26.77 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfk66n85x-datasheets-8865.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | 66A | 850V | 1250W Tc | N-Channel | 8900pF @ 25V | 65m Ω @ 500mA, 10V | 5.5V @ 8mA | 66A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ44P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX102N65X2 | IXYS | $12.79 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtk102n65x2-datasheets-4817.pdf | TO-247-3 | 15 Weeks | 102A | 650V | 1040W Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 102A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB44N100Q3 | IXYS | $39.36 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb44n100q3-datasheets-2532.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 20 Weeks | 220MOhm | 264 | 3 | Single | 1.56kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 48 ns | 300ns | 66 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1560W Tc | 110A | 4000 mJ | 1kV | N-Channel | 13600pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 264nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh24n50-datasheets-4823.pdf | 500V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | Unknown | 200mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 26A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 250 ns | 500V | N-Channel | 4200pF @ 25V | 4 V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA5P800UC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-252-3 | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | -55°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | EFFICIENCY | SILICON | 60W | 5μA | TO-252AA | 1.38V | RECTIFIER DIODE | 800V | 5A | 64A | 1 | 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSP25-12AT | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 180°C | -40°C | AVALANCHE | RoHS Compliant | TO-268-3 | 2 | yes | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | Dual | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.6V | 300A | ANODE AND CATHODE | GENERAL PURPOSE | SILICON | 2mA | 330A | 1.2kV | TO-268AA | RECTIFIER DIODE | 1.2kV | 28A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK38-0025BS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Common Cathode | 25V | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DE475-102N21A | IXYS |
Min: 1 Mult: 1 |
download | MOSFET | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-de475102n21a-datasheets-7491.pdf | 6 | Single Quad Source | N | -55 | 175 | Surface Mount | 3.18 | 21.08 | 23.24 | 6 | 8541.29.00.95 | 1800000 | No | 1000 | ±20 | Enhancement | 1 | 24 | 450@15V | 5500@800V | 52@800V | 190@800V | 155@10V | 5 | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SM400K10L | IXYS |
Min: 1 Mult: 1 |
download | Monocrystalline | IXOLAR™ | -40°C~90°C | Tray | 1.299Lx0.591W x 0.071 H 33.00mmx15.00mmx1.80mm | Not Applicable | ROHS3 Compliant | /files/ixys-sm400k10l-datasheets-5364.pdf | Cells | 9 Weeks | 5.58V | 85.7mW | 15.4mA | 6.91V | 16.4mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCMA140P1400TA | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~140°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/ixys-mcma140p1400ta-datasheets-0760.pdf | TO-240AA | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Silicon Controlled Rectifiers | 220A | 140000A | 10mA | 200mA | 2590 A | 1400V | SCR | 1.4kV | 220A | 1.5V | 2400A 2590A | 150mA | 140A | 2G-2GR | Series Connection - All SCRs | 2 SCRs | A-K-AK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBO160-14NO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-vbo16014no7-datasheets-2365.pdf | PWS-E | 94mm | 30mm | 54mm | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VBO160 | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 1.43V | 2.8kA | 300μA | ISOLATED | SILICON | 3.3kA | Single Phase | 174A | 2500A | 1 | 1.4kV | 300μA @ 1400V | 1.43V @ 300A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR40N60C2G1 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | ISOPLUS247™ | IXG*40N60 | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR35N120BD1 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixgr35n120bd1-datasheets-0784.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 247 | yes | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | NOT SPECIFIED | IXG*35N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 40 ns | 1.2kV | 105 ns | 1.2kV | 54A | 1200V | 780 ns | 960V, 35A, 3 Ω, 15V | 3.5V @ 15V, 35A | 140nC | 200A | 40ns/270ns | 900μJ (on), 3.8mJ (off) |
