Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IXTP2R4N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty2r4n50p-datasheets-5764.pdf | 500V | 2A | TO-220-3 | Lead Free | 3 | 7 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 55W | 1 | Not Qualified | R-PSFM-T3 | 29ns | 28 ns | 65 ns | 2.4A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-220AB | 4.5A | 100 mJ | 500V | N-Channel | 240pF @ 25V | 3.75 Ω @ 500mA, 10V | 5.5V @ 25μA | 2.4A Tc | 6.1nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
IXTV26N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
IXFV20N80PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh20n80p-datasheets-5587.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 24 ns | 85 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 0.52Ohm | 1000 mJ | 800V | N-Channel | 4685pF @ 25V | 520m Ω @ 10A, 10V | 5V @ 4mA | 20A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
IXFX26N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n60q-datasheets-7450.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | 360W Tc | 104A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
IXTA220N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 65ns | 47 ns | 55 ns | 220A | SILICON | DRAIN | SWITCHING | 480W Tc | 130A | 350A | 0.0085Ohm | 750 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXTH220N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth220n055t-datasheets-7530.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-T3 | 62ns | 53 ns | 53 ns | 220A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-247AD | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXTH230N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth230n085t-datasheets-7564.pdf | TO-247-3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSFM-T3 | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | TO-247AD | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
IXTH250N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth250n075t-datasheets-7601.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSFM-T3 | 50ns | 45 ns | 58 ns | 250A | SILICON | DRAIN | SWITCHING | 550W Tc | TO-247AD | 560A | 0.004Ohm | 1500 mJ | 75V | N-Channel | 9900pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 250A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXTH200N075T | IXYS | $4.60 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n075t-datasheets-7639.pdf | TO-247-3 | Lead Free | 3 | 5MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-T3 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-247AD | 540A | 750 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
IXTV250N075TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv250n075ts-datasheets-7668.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSSO-G2 | 50ns | 45 ns | 58 ns | 250A | SILICON | DRAIN | SWITCHING | 550W Tc | 560A | 0.004Ohm | 1500 mJ | 75V | N-Channel | 9900pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 250A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
IXTY64N055T | IXYS | $1.61 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp64n055t-datasheets-7652.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSSO-G2 | 52ns | 30 ns | 37 ns | 64A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-252AA | 250 mJ | 55V | N-Channel | 1420pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 25μA | 64A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
IXTP90N075T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n075t2-datasheets-2997.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 28ns | 20 ns | 35 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-220AB | 225A | 0.01Ohm | 400 mJ | 75V | N-Channel | 3290pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXFN60N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn60n60-datasheets-5322.pdf | 600V | 60A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 40g | No SVHC | 75MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 52ns | 26 ns | 110 ns | 60A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 700W Tc | 240A | 4000 mJ | 600V | N-Channel | 15000pF @ 25V | 4.5 V | 75m Ω @ 500mA, 10V | 4.5V @ 8mA | 60A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||
IXFH74N20 | IXYS | $0.73 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20-datasheets-8472.pdf | TO-247-3 | Lead Free | 3 | 30MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 26 ns | 120 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 296A | 200V | N-Channel | 5400pF @ 25V | 30m Ω @ 500mA, 10V | 4V @ 4mA | 74A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXFJ40N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfj40n30-datasheets-8534.pdf | TO-220-3, Short Tab | Lead Free | 3 | 80MOhm | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 60ns | 45 ns | 75 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-268AA | 160A | 300V | N-Channel | 4800pF @ 25V | 80m Ω @ 20A, 10V | 4V @ 4mA | 40A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
IXFL55N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS264™ | 55A | 500V | N-Channel | 55A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFN48N50U3 | IXYS | $4.04 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | 260 | 4 | Single | 35 | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 30 ns | 100 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 520W Tc | 192A | 0.08Ohm | 500V | N-Channel | 8400pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
IXTC72N30T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 72A | 300V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTA72N20T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 72A | 200V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK210N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk210n17t-datasheets-9134.pdf | TO-264-3, TO-264AA | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1150W Tc | 580A | 0.0075Ohm | 2000 mJ | N-Channel | 18800pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 4mA | 210A Tc | 285nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
IXTC110N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/ixys-ixtc110n25t-datasheets-1069.pdf | ISOPLUS220™ | Lead Free | 3 | 27MOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 27ns | 27 ns | 60 ns | 50A | 20V | SILICON | ISOLATED | SWITCHING | 180W Tc | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 27m Ω @ 55A, 10V | 4.5V @ 1mA | 50A Tc | 157nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
IXFC20N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
IXCY01N90E | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IXFV12N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSIP-T3 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
IXTA02N250 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth02n250-datasheets-2386.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 1 | R-PSSO-G2 | 19ns | 33 ns | 32 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 2500V | 2500V | 83W Tc | 0.2A | 0.6A | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IXFJ15N100Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFR32N50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | yes | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 30A | 120A | 0.15Ohm | 1500 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||
IXFT1874 TR | IXYS |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFM15N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n60-datasheets-7594.pdf | TO-204AE | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 300W Tc | 15A | 60A | 0.05Ohm | N-Channel | 4500pF @ 25V | 500m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IXFM1627 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant |
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