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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN400N15X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn400n15x3-datasheets-1064.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 150V | 695W Tc | N-Channel | 23700pF @ 25V | 2.5m Ω @ 200A, 10V | 4.5V @ 8mA | 400A Tc | 365nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F420N10T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f420n10t-datasheets-1096.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 21 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 680W | 1 | FET General Purpose Power | 47 ns | 115 ns | 334A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 680W Tc | 0.0026Ohm | 5000 mJ | N-Channel | 4700pF @ 10V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 334A Tc | 670nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTT3N200P3HV | IXYS | $43.36 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth3n200p3hv-datasheets-3758.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 3A | 2000V | 520W Tc | N-Channel | 1860pF @ 25V | 8 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN240N075L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Chassis Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | SOT-227-4, miniBLOC | 28 Weeks | compliant | 75V | 735W Tc | N-Channel | 19000pF @ 25V | 7m Ω @ 120A, 10V | 4.5V @ 3mA | 225A Tc | 546nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 125W Tc | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA75N10P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 360W Tc | N-Channel | 2250pF @ 25V | 25m Ω @ 37.5A, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP8N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp8n65x2-datasheets-1933.pdf | TO-220-3 | 19 Weeks | compliant | 650V | 150W Tc | N-Channel | 790pF @ 25V | 450m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP10N60P | IXYS | $3.40 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfp10n60p-datasheets-2120.pdf | 600V | 10A | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 26 Weeks | No SVHC | 740MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 23 ns | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 200W Tc | TO-220AB | 25A | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 1mA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||
| IXTA3N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 125W Tc | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36N30T | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 300W | 36A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 500mA, 10V | 36A Tc | 70nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP120N075T2 | IXYS | $15.36 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta120n075t2-datasheets-2352.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | TO-220AB | 300A | 0.0077Ohm | 600 mJ | N-Channel | 4740pF @ 25V | 7.7m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA15P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-263AA | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||
| IXTP16N50P | IXYS | $0.69 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXTA4N80P | IXYS | $7.11 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n80p-datasheets-1592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTP4N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N65X2 | IXYS | $2.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 8A | 14A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTP5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTY3N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 2.9Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTY2N60P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFR90N30 | IXYS | $116.07 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr90n30-datasheets-7376.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 400W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 75A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4.5V @ 4mA | 75A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA180N055T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 600A | 0.004Ohm | 1000 mJ | N-Channel | 4V @ 1mA | 180A Tc | ||||||||||||||||||||||||||||||||||||||||||
| IXFX66N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx66n50q2-datasheets-7474.pdf | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 16ns | 10 ns | 60 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTA200N085T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t7-datasheets-7517.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 5MOhm | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G6 | 80ns | 64 ns | 65 ns | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480W Tc | 540A | 1 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTC180N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | ISOPLUS220™ | 4mOhm | 55V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP55N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp55n075t-datasheets-7621.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 50ns | 41 ns | 44 ns | 55A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 50A | 250 mJ | 75V | N-Channel | 1400pF @ 25V | 19.5m Ω @ 27.5A, 10V | 4V @ 25μA | 55A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTQ200N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n085t-datasheets-7562.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| VMO80-05P1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | ECO-PAC2 | 18 | yes | UL RECOGNIZED | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 18 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X18 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 82A | 0.05Ohm | 3000 mJ | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc280n055t-datasheets-7929.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 145A | SILICON | DRAIN | SWITCHING | 160W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.6m Ω @ 50A, 10V | 4V @ 250μA | 145A Tc | 200nC @ 10V | 10V | ±20V |
