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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFL32N120P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfl32n120p-datasheets-1127.pdf | ISOPLUSi5-Pak™ | 20.29mm | 26.42mm | 5.21mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 70 ns | 62ns | 51 ns | 88 ns | 24A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 520W Tc | 100A | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 340m Ω @ 16A, 10V | 6.5V @ 1mA | 24A Tc | 360nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTF2N300P3 | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf2n300p3-datasheets-1168.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 3000V | 160W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 1.6A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN90P20P | IXYS | $32.83 |
Min: 1 Mult: 1 |
download | PolarP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtn90p20p-datasheets-1418.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | 38.000013g | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | 3500 mJ | P-Channel | 12000pF @ 25V | 44m Ω @ 500mA, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA50N20P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 360W Tc | N-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ28N15P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtq28n15p-datasheets-1812.pdf | TO-3P-3, SC-65-3 | TO-3P | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA08N120P | IXYS | $3.37 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp08n120p-datasheets-2050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 50W Tc | 0.8A | 80 mJ | 1.2kV | N-Channel | 333pF @ 25V | 25 Ω @ 500mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA170N075T2 | IXYS | $19.60 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta170n075t2-datasheets-2178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | Single | 360W | TO-263 (IXTA) | 6.86nF | 11ns | 19 ns | 25 ns | 170A | 20V | 75V | 360W Tc | 5.4mOhm | 75V | N-Channel | 6860pF @ 25V | 5.4mOhm @ 50A, 10V | 4V @ 250μA | 170A Tc | 109nC @ 10V | 5.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA74N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 74A | 150V | N-Channel | 74A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P10T | IXYS | $1.70 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 150W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15ns | 1 ns | 37 ns | 26A | 15V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 80A | 0.09Ohm | 300 mJ | 100V | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| IXTA86N20T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 550W Tc | N-Channel | 4500pF @ 25V | 33m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY26P10T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | TO-252 | 100V | 150W Tc | P-Channel | 3820pF @ 25V | 90mOhm @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFA12N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA120N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120n04t2-datasheets-4305.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 8ns | 11 ns | 16 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 360A | 0.0061Ohm | 400 mJ | 40V | N-Channel | 3240pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 120A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTY3N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTV30N50PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTV36N50PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 108A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTV26N60PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFR26N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr26n60q-datasheets-7367.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | Not Qualified | 32ns | 15 ns | 80 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 92A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 23A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFV12N80PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfq12n80p-datasheets-0104.pdf | PLUS-220SMD | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 26ns | 25 ns | 70 ns | 12A | 30V | 800V | SILICON | DRAIN | SWITCHING | 5V | 360W Tc | 250 ns | 36A | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 5 V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFT60N25Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA70N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta70n085t-datasheets-7511.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSSO-G2 | 72ns | 40 ns | 40 ns | 70A | SILICON | DRAIN | SWITCHING | 176W Tc | 190A | 0.0135Ohm | 500 mJ | 85V | N-Channel | 2570pF @ 25V | 13.5m Ω @ 25A, 10V | 4V @ 50μA | 70A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTH12N120 | IXYS | $125.39 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n120-datasheets-7543.pdf | TO-247-3 | Lead Free | 3 | No SVHC | 1.4Ohm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 25ns | 17 ns | 35 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 500W Tc | TO-247AD | 850 ns | 48A | 1000 mJ | 1.2kV | N-Channel | 3400pF @ 25V | 1.4 Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTP180N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-220-3 | 3 | yes | EAR99 | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | TO-220AB | 600A | 0.0051Ohm | 450 mJ | N-Channel | 4V @ 1mA | 180A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK250N10 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtk250n10-datasheets-7612.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 3 | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 730W | 1 | Not Qualified | 40ns | 55 ns | 120 ns | 250A | 20V | SILICON | DRAIN | SWITCHING | 730W Tc | 1000A | 0.005Ohm | 4000 mJ | 100V | N-Channel | 12700pF @ 25V | 5m Ω @ 90A, 10V | 4V @ 250μA | 250A Tc | 430nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP64N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp64n055t-datasheets-7652.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSFM-T3 | 52ns | 30 ns | 37 ns | 64A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 170A | 0.013Ohm | 250 mJ | 55V | N-Channel | 1420pF @ 25V | 13m Ω @ 500mA, 10V | 4V @ 25μA | 64A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTU05N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 500mA | 1200V | N-Channel | 500mA Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA220N075T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n075t7-datasheets-7764.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-G6 | 65ns | 47 ns | 55 ns | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480W Tc | 600A | 0.0045Ohm | 1000 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFK34N80 | IXYS | $9.26 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk34n80-datasheets-5290.pdf | 800V | 34A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 240mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 45ns | 40 ns | 100 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 250 ns | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 5V @ 8mA | 34A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFC60N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfc60n20-datasheets-8413.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 63ns | 26 ns | 85 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 240A | 1000 mJ | 200V | N-Channel | 5200pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 4mA | 60A Tc | 155nC @ 10V | 10V | ±20V |
