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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ME0500-06DA | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-meo50006da-datasheets-9142.pdf | 600V | 514A | Y4-M6 | Lead Free | 18 Weeks | Standard | Single | Y4-M6 | 582A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | Standard | 600V | 514A | 600V | 24mA @ 600V | 1.36V @ 300A | 514A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSI75-08B | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsai7516b-datasheets-8519.pdf | DO-203AB, DO-5, Stud | 38.3mm | 17mm | 1 | 18 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 110A | 1.17V | 1.4kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5kA | 6mA | 800V | 1.5kA | 800V | Standard | 800V | 110A | 1 | 6mA @ 800V | 1.17V @ 150A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS3-025AS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-dgsk8025a-datasheets-8384.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 350.003213mg | EAR99 | HIGH SWITCHING SPEED | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 5.4A | 1.6V | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | 10A | 700μA | 250V | TO-252AA | Schottky | 250V | 5.4A | 1 | 700μA @ 250V | 1.6V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1-12D | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | Not Applicable | 150°C | -40°C | AVALANCHE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ds112d-datasheets-1752.pdf | Radial | 2 | 1 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T2 | 1.3V | 110A | 700μA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 118A | Standard | 1.2kV | 2.3A | 1 | 1200V | 700μA @ 1200V | 1.3V @ 7A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-03A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dsep6003a-datasheets-1879.pdf | TO-247-2 | 2 | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 1 | Rectifier Diodes | Not Qualified | 1.71V | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 300V | 60A | 700A | 1 | 650μA @ 300V | 1.71V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDO1200-18N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | Y1-CU | MDO1200 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.8kV | 1800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP80N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfp80n25x3-datasheets-1727.pdf | TO-220-3 | 19 Weeks | yes | 250V | 390W Tc | N-Channel | 5430pF @ 25V | 16m Ω @ 40A, 10V | 4.5V @ 1.5mA | 80A Tc | 83nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA180N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n10t-datasheets-2185.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 6.4MOhm | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | 450A | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TUB | IXYS | $71.19 |
Min: 1 Mult: 1 |
download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA90N20X3 | IXYS | $4.55 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa90n20x3-datasheets-9879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N20T | IXYS | $14.28 |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n20t-datasheets-4838.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1150W Tc | 470A | 0.011Ohm | 3000 mJ | N-Channel | 19600pF @ 25V | 11m Ω @ 60A, 10V | 5V @ 4mA | 170A Tc | 265nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 26 Weeks | 3 | Single | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN22N100L | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn22n100l-datasheets-9234.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 600mOhm | 4 | yes | UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 36 ns | 35ns | 50 ns | 80 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 700W Tc | 50A | 1500 mJ | 1kV | N-Channel | 7050pF @ 25V | 600m Ω @ 11A, 20V | 5.5V @ 250μA | 22A Tc | 270nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN70N100X | IXYS | $56.50 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n100x-datasheets-2376.pdf | SOT-227-4, miniBLOC | 19 Weeks | 1000V | 1200W Tc | N-Channel | 9150pF @ 25V | 89m Ω @ 35A, 10V | 6V @ 8mA | 56A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N85XM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n85xm-datasheets-5212.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 35W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36N50P | IXYS | $36.88 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-247-3 | Lead Free | 3 | No SVHC | 170MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 540W Tc | TO-247AD | 108A | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 5 V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT240N15X4HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth240n15x4-datasheets-5560.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | 150V | 940W Tc | N-Channel | 8900pF @ 25V | 4.4m Ω @ 120A, 10V | 4.5V @ 250μA | 240A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2 | IXYS | $8.93 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n100d2-datasheets-2865.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | TO-263AA | N-Channel | 1020pF @ 25V | 5.5 Ω @ 1.5A, 0V | 3A Tc | 37.5nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA120P065T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120p065t-datasheets-5518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 10MOhm | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 298W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 28ns | 21 ns | 120A | 15V | SILICON | DRAIN | SWITCHING | 65V | 298W Tc | 0.12A | 360A | 1000 mJ | -65V | P-Channel | 13200pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX420N10T | IXYS | $2.14 |
Min: 1 Mult: 1 |
download | GigaMOS™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx420n10t-datasheets-7144.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 420A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1670W Tc | 0.0026Ohm | 5000 mJ | N-Channel | 47000pF @ 25V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 420A Tc | 670nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY8N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixty8n70x2-datasheets-0423.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | yes | 700V | 150W Tc | N-Channel | 800pF @ 10V | 500m Ω @ 500mA, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 180W | 1 | FET General Purpose Power | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP5N100PM | IXYS | $7.20 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100pm-datasheets-2755.pdf | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 2.3A | 1000V | 42W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 2.3A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU64N055T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 64A | 55V | N-Channel | 4V @ 25μA | 64A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N70X2M | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n70x2m-datasheets-1751.pdf | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | yes | 700V | 32W Tc | N-Channel | 800pF @ 10V | 550m Ω @ 500mA, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36P15P-TRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixta36p15ptrl-datasheets-9545.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 150V | 300W Tc | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N20X3 | IXYS | $8.42 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3-datasheets-4593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 200V | 320W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N300P3HV | IXYS | $33.68 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-247-3 Variant | 24 Weeks | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK8N150L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk8n150l-datasheets-3766.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 1500V | 700W Tc | 8A | 20A | N-Channel | 8000pF @ 25V | 3.6 Ω @ 4A, 20V | 8V @ 250μA | 8A Tc | 250nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP18N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp18n60x-datasheets-3822.pdf | TO-220-3 | 19 Weeks | 18A | 600V | 320W Tc | N-Channel | 1440pF @ 25V | 230m Ω @ 9A, 10V | 4.5V @ 1.5mA | 18A Tc | 35nC @ 10V | 10V | ±30V |
