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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA36N30T | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 300W | 36A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 500mA, 10V | 36A Tc | 70nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP120N075T2 | IXYS | $15.36 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta120n075t2-datasheets-2352.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | TO-220AB | 300A | 0.0077Ohm | 600 mJ | N-Channel | 4740pF @ 25V | 7.7m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTA15P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-263AA | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||
| IXTP16N50P | IXYS | $0.69 |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||
| IXTA4N80P | IXYS | $7.11 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n80p-datasheets-1592.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 29 ns | 60 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 8A | 250 mJ | 800V | N-Channel | 750pF @ 25V | 3.4 Ω @ 500mA, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTP4N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTY4N65X2 | IXYS | $2.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTP8N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 8A | 14A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| IXTP5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| IXTY3N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 2.9Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | |||||||||||||||||||
| IXTY2N60P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| IXFR90N30 | IXYS | $116.07 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr90n30-datasheets-7376.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 400W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 75A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4.5V @ 4mA | 75A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTA180N055T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 600A | 0.004Ohm | 1000 mJ | N-Channel | 4V @ 1mA | 180A Tc | ||||||||||||||||||||||||||||||||||||
| IXFX66N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx66n50q2-datasheets-7474.pdf | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 16ns | 10 ns | 60 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTA180N085T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n085t7-datasheets-7519.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 70ns | 65 ns | 55 ns | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 480A | 0.0055Ohm | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXTH180N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth180n085t-datasheets-7552.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 65 ns | 55 ns | 180A | SILICON | DRAIN | SWITCHING | 430W Tc | 480A | 0.0055Ohm | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTP240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t-datasheets-7497.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-220AB | 650A | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTP8N50PM | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50pm-datasheets-7623.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 41W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 23 ns | 65 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 41W Tc | TO-220AB | 4A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTU44N10T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 44A | 100V | N-Channel | 4.5V @ 25μA | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY50N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n085t-datasheets-7614.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 33 ns | 38 ns | 50A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-252AA | 250 mJ | 85V | N-Channel | 1460pF @ 25V | 23m Ω @ 25A, 10V | 4V @ 25μA | 50A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTY5N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFK120N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n20-datasheets-8098.pdf | 200V | 120A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFC80N08 | IXYS | $5.91 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc80n08-datasheets-8450.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 75A | 0.009Ohm | 1000 mJ | 80V | N-Channel | 4800pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFH60N25Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFK52N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 52A | 20V | SILICON | DRAIN | 360W Tc | 208A | 0.06Ohm | 1500 mJ | 300V | N-Channel | 5300pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR30N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr30n50q-datasheets-8654.pdf | ISOPLUS247™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 29A | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFT74N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20-datasheets-8472.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 55ns | 26 ns | 120 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 296A | 0.3Ohm | 200V | N-Channel | 5400pF @ 25V | 30m Ω @ 500mA, 10V | 4V @ 4mA | 74A Tc | 280nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFT30N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 128A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 4925pF @ 25V | 160m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXFE80N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe80n50-datasheets-8957.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 72A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 580W Tc | 320A | 0.055Ohm | 6000 mJ | 500V | N-Channel | 9890pF @ 25V | 55m Ω @ 40A, 10V | 4.5V @ 8mA | 72A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTV102N20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv102n20t-datasheets-0961.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | 10V | ±30V |
