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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH40N50Q | IXYS | $5.83 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf | 500V | 40A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 160A | 0.14Ohm | 2 mJ | 500V | N-Channel | 3800pF @ 25V | 140m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFH240N15X3 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 19 Weeks | compliant | 150V | 780W Tc | N-Channel | 9580pF @ 25V | 5.4m Ω @ 120A, 10V | 4.5V @ 4mA | 240A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n120-datasheets-0692.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 500W | 1 | 25ns | 17 ns | 35 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 500W Tc | TO-247AD | 48A | 1.2kV | N-Channel | 3400pF @ 25V | 1.4 Ω @ 500mA, 10V | 5V @ 4mA | 12A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTK32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN/SILVER/COPPER (SN/AG/CU) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH18N100Q3 | IXYS | $14.82 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n100q3-datasheets-0763.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | Single | 830W | 1 | FET General Purpose Power | 37 ns | 33ns | 13 ns | 40 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 6.5V | 830W Tc | 60A | 0.66Ohm | 1kV | N-Channel | 4890pF @ 25V | 660m Ω @ 9A, 10V | 6.5V @ 4mA | 18A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTH06N220P3HV | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth06n220p3hv-datasheets-0798.pdf | TO-247-3 Variant | 24 Weeks | compliant | 2200V | 104W Tc | N-Channel | 290pF @ 25V | 80 Ω @ 300mA, 10V | 4V @ 250μA | 600mA Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE44N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n50q-datasheets-0847.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2.5 mJ | 500V | N-Channel | 7000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFT150N25X3HV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 250V | 780W Tc | N-Channel | 10400pF @ 25V | 9m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTE250N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-227-4, miniBLOC | 3 | Single | 730W | 250A | 100V | 5mOhm | 100V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR64N50Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50q3-datasheets-0957.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 500W | 1 | FET General Purpose Power | R-PSIP-T3 | 36 ns | 250ns | 46 ns | 45A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 160A | 0.094Ohm | 4000 mJ | 500V | N-Channel | 6950pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 45A Tc | 145nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFK44N80Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk44n80q3-datasheets-0999.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 63 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 0.19Ohm | 800V | N-Channel | 9840pF @ 25V | 190m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 185nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFN64N50PD2 | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfn64n50pd2-datasheets-1034.pdf | SOT-227-4, miniBLOC | 4 | 38.000013g | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 52A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 625W Tc | 50A | 200A | 0.085Ohm | 2500 mJ | N-Channel | 11000pF @ 25V | 85m Ω @ 32A, 10V | 5V @ 8mA | 52A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFN20N120 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn20n120-datasheets-1072.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 780W | 1 | Not Qualified | 45ns | 20 ns | 75 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 780W Tc | 80A | 0.75Ohm | 2000 mJ | 1.2kV | N-Channel | 7400pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 8mA | 20A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFE44N50QD2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfe48n50qd3-datasheets-1077.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 10 ns | 75 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 176A | 0.12Ohm | 2500 mJ | 500V | N-Channel | 8000pF @ 25V | 120m Ω @ 22A, 10V | 4V @ 4mA | 39A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFN72N55Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn72n55q2-datasheets-1152.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | Not Qualified | 23ns | 10 ns | 58 ns | 72A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 288A | 0.072Ohm | 5000 mJ | 550V | N-Channel | 10500pF @ 25V | 72m Ω @ 500mA, 10V | 5V @ 8mA | 72A Tc | 258nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFN30N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn30n120p-datasheets-1204.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 890W Tc | 75A | 0.35Ohm | 2000 mJ | 1.2kV | N-Channel | 19000pF @ 25V | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 30A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFN24N90Q | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PUFM-X4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | 900V | 900V | 500W Tc | 0.45Ohm | N-Channel | 24A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA62N15P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 350W Tc | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 700V | 80W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP10N60PM | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp10n60pm-datasheets-2143.pdf | 600V | 10A | TO-220-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | 24ns | 18 ns | 55 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 5A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 5A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTP44N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 44A | 250V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP230N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta230n04t4-datasheets-2098.pdf | TO-220-3 | 24 Weeks | compliant | 40V | 340W Tc | N-Channel | 7400pF @ 25V | 2.9m Ω @ 115A, 10V | 4V @ 250μA | 230A Tc | 140nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N075T2 | IXYS | $2.57 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixta90n075t2-datasheets-2435.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 20 ns | 35 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 225A | 0.01Ohm | 400 mJ | 75V | N-Channel | 3290pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA270N04T4-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | yes | unknown | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP15N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 15A | 200V | N-Channel | 15A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY5N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfa5n50p3-datasheets-1424.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | FET General Purpose Power | 5A | Single | 500V | 114W Tc | 5A | N-Channel | 370pF @ 25V | 1.65 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N60P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-263-3 | 30 Weeks | 2.299997g | 200W | 1 | 23 ns | 27ns | 21 ns | 21 ns | 10A | 30V | 600V | 740mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH50P085 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p085-datasheets-7665.pdf | -85V | -50A | TO-247-3 | Lead Free | 3 | 8 Weeks | 55MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | 3 | Single | 300W | 1 | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 85V | 300W Tc | TO-247AD | 200A | -85V | P-Channel | 4200pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTI12N50P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTP4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | 600V | 4A | TO-220-3 | Lead Free | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | Not Qualified | R-PSFM-T3 | 10ns | 20 ns | 50 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 4A | 10A | 2Ohm | 150 mJ | 600V | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V |
