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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Output Voltage | Output Current | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | Input Voltage-Nom | Topology | Synchronous Rectifier | Max Duty Cycle | Clock Sync | Number of Inputs | Output | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Control Features | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Duty Cycle (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI9118DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | BCDMOS | 3mA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9118dyt1e3-datasheets-9814.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16.5V | 16 | 547.485991mg | 16 | yes | EAR99 | 1MHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | SI9118 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 11.5V | 500mA | Transistor Driver | 40ns | 40 ns | Step-Up/Step-Down | 1 | Positive, Isolation Capable | 10V | Forward Converter | No | 80 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Current Limit, Enable, Frequency Control, Soft Start | 10V~16.5V | 40kHz~1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1563DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1563dht1e3-datasheets-4306.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 490mOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 570mW | DUAL | GULL WING | 260 | SI1563 | 6 | 30 | 740mW | 2 | Other Transistors | 25ns | 25 ns | 15 ns | 1.13A | 8V | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mV | 20V | N and P-Channel | 1 V | 280m Ω @ 1.13A, 4.5V | 1V @ 100μA | 1.13A 880mA | 2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9122DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si9122dlpt1e3-datasheets-9909.pdf | 20-TSSOP (0.173, 4.40mm Width) | 6.5mm | 4.4mm | 72V | 20 | 190.990737mg | 20 | yes | EAR99 | 750kHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 0.65mm | SI9122 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 3.3V | 2.5mA | Transistor Driver | Step-Up/Step-Down | 1 | Positive, Isolation Capable | 12V | Half-Bridge | Yes | 95 % | No | VOLTAGE-MODE | PULSE WIDTH MODULATION | PUSH-PULL | Current Limit, Sequencing, Soft Start | 10V~13.2V | 500kHz | 92% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7872DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7872dpt1e3-datasheets-4752.pdf | 30V | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7872 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 9 ns | 10ns | 10 ns | 40 ns | 6.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 22m Ω @ 7.5A, 10V | 3V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG604EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg604eeqt1ge4-datasheets-3696.pdf | 14-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 2 | 14-TSSOP | 414MHz | 101Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 4.2pF 6.8pF | 54ns, 52ns | -0.3pC | 5Ohm | -65dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA911DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 94MOhm | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | 3.6A | 8V | 20V | 6.5W | 94mOhm | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9425EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9425edqt1ge3-datasheets-1380.pdf | 16-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 3Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 3Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4226DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4226dyt1ge3-datasheets-5518.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4226 | 8 | 2 | Dual | 30 | 2W | 2 | 14 ns | 10ns | 8 ns | 30 ns | 8A | 12V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 3.2W | 7.5A | 0.0195Ohm | 25V | 2 N-Channel (Dual) | 1255pF @ 15V | 19.5m Ω @ 7A, 4.5V | 2V @ 250μA | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG448DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 16μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg447dvt1e3-datasheets-7330.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 30μA | 6 | 10 Weeks | 19.986414mg | 36V | 7V | 25Ohm | 6 | yes | No | 1 | 16μA | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | 15V | 0.95mm | DG448 | 6 | 1 | 40 | 570mW | Multiplexer or Switches | SPST | 130 ns | 95 ns | 20V | Dual, Single | 4.5V | -15V | 1 | SEPARATE OUTPUT | 25Ohm | 17Ohm | 72 dB | BREAK-BEFORE-MAKE | NO | 7V~36V ±4.5V~20V | 1:1 | SPST - NO | 1nA | 8pF | 130ns, 95ns | 10pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7501DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7501dnt1e3-datasheets-4745.pdf | PowerPAK® 1212-8 Dual | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.6W | C BEND | 260 | SI7501 | 8 | Dual | 30 | 3.1W | 2 | Other Transistors | S-XDSO-C5 | 10 ns | 20ns | 20 ns | 25 ns | 5.4A | 25V | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | N and P-Channel, Common Drain | 35m Ω @ 7.7A, 10V | 3V @ 250μA | 5.4A 4.5A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | Unknown | 36V | 13V | 80Ohm | 16 | yes | Tin | No | 4 | 100pA | e3 | Non-Inverting | 600mW | GULL WING | 260 | 15V | 1.27mm | DG411 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 35Ohm | 45Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8902EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si8902edbt2e1-datasheets-9750.pdf | 6-MICRO FOOT®CSP | 6 | 24 Weeks | yes | EAR99 | ESD PROTECTED, ULTRA-LOW RESISTANCE | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | SI8902 | 6 | 40 | 2 | FET General Purpose Power | Not Qualified | R-XBGA-B6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.7W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 3.9A | 0.072Ohm | 2 N-Channel (Dual) Common Drain | 1V @ 980μA | 3.9A | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 50μA | 16 | 15 Weeks | 172.98879mg | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG202 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia922edjt4ge3-datasheets-1416.pdf | PowerPAK® SC-70-6 Dual | 30V | 1.9W Ta 7.8W Tc | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.4A Ta 4.5A Tc | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG418 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | Not Qualified | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3850ADV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3850advt1e3-datasheets-4389.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.08W | GULL WING | 260 | SI3850 | 6 | Dual | 30 | 1.06W | 2 | Other Transistors | 1.4A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.41Ohm | 20V | N and P-Channel, Common Drain | 300m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.4A 960mA | 1.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1409EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | Non-RoHS Compliant | /files/vishaysiliconix-dg1409eent1ge4-datasheets-9163.pdf | 16-VQFN Exposed Pad | 4mm | 16 | 16 Weeks | unknown | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 5V | 0.65mm | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | S-XQCC-N16 | 90MHz | -5V | 4.2Ohm | 58 dB | 0.36Ohm | 155ns | 4.5V~24V ±4.5V~16.5V | 4:2 | 550pA | 13pF 43pF | 130ns, 105ns | 103pC | 270m Ω | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1972DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si1972dht1e3-datasheets-4344.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1972 | 6 | 30 | 740mW | 2 | FET General Purpose Power | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 75pF @ 15V | 225m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 15μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg441dje3-datasheets-4856.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 13V | 85Ohm | 16 | yes | No | 4 | 15μA | e3 | Matte Tin (Sn) | 12V | 900mW | GULL WING | 260 | 15V | 1.27mm | DG442 | 16 | 1 | 30 | 900mW | Multiplexer or Switches | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 60 dB | 4Ohm | BREAK-BEFORE-MAKE | 210ns | NO | 1:1 | SPST - NO | ±15V | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1905BDH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1905bdht1e3-datasheets-2156.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | Unknown | 542MOhm | 6 | No | 357mW | SI1905 | Dual | 3.01W | 2 | SC-70-6 (SOT-363) | 62pF | 9 ns | 40ns | 60 ns | 50 ns | -630mA | 8V | 8V | -1V | 357mW | 542mOhm | 2 P-Channel (Dual) | 62pF @ 4V | -1 V | 542mOhm @ 580mA, 4.5V | 1V @ 250μA | 630mA | 1.5nC @ 4.5V | Logic Level Gate | 542 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442ledyt1ge3-datasheets-7337.pdf | 16-TSSOP (0.173, 4.40mm Width) | 20 Weeks | No SVHC | 26Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 6.6pC | 100m Ω | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4622DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4622dyt1ge3-datasheets-1933.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | 3.1W | GULL WING | SI4622 | 8 | 2 | 2.2W | FET General Purpose Power | 14 ns | 12ns | 11 ns | 21 ns | 8A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.1W | 8A | 2 N-Channel (Dual) | 2458pF @ 15V | 16m Ω @ 9.6A, 10V | 2.5V @ 1mA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LEDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 26Ohm | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 4 | R-PDSO-G16 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4940DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4940dyt1e3-datasheets-2267.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | 36mOhm | 8 | 1.1W | 2 | Dual | 1.1W | 2 | 8-SO | 7 ns | 12ns | 12 ns | 15 ns | 4.2A | 20V | 40V | 1.1W | 36mOhm | 40V | 2 N-Channel (Dual) | 36mOhm @ 5.7A, 10V | 1V @ 250μA (Min) | 4.2A | 14nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2034EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg2034edqt1ge3-datasheets-5382.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 19 Weeks | unknown | SINGLE-ENDED MULTIPLEXER | 1 | 166MHz | 2.5Ohm | 4:1 | 1.8V~5.5V | SP4T | 2nA | 7pF - | 25ns, 20ns | -2.6pC | 20m Ω | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5504dct1e3-datasheets-4592.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5504 | 8 | 30 | 2 | Other Transistors | 2.1A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.9A | N and P-Channel | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 2.9A 2.1A | 7.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2737DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2739dnt1e4-datasheets-5106.pdf | 8-UFQFN | 1μA | 8 | 12 Weeks | 4.3V | 2.3V | 8Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2737 | 8 | 1 | 40 | Multiplexer or Switches | 3V | 1 | Not Qualified | 720MHz | SPST | 60 ns | 50 ns | Single | SEPARATE OUTPUT | 8Ohm | 28 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 2:1 | 2.3V~4.3V | SPDT | 10nA | 4.4pF 3.8pF | 60ns, 50ns | 10.4pC | 100m Ω | -109dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4940DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4940dyt1e3-datasheets-2267.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | 8 | 1.1W | 2 | Dual | 8-SO | 4.2A | 20V | 40V | 1.1W | 36mOhm | 2 N-Channel (Dual) | 36mOhm @ 5.7A, 10V | 1V @ 250μA (Min) | 4.2A | 14nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3537DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3537 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 1.1W | GULL WING | 260 | SI6969 | 8 | 2 | Dual | 40 | 1.1W | 2 | Not Qualified | 25 ns | 35ns | 35 ns | 80 ns | 4.6A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.034Ohm | 2 P-Channel (Dual) | 34m Ω @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate |
