Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI7868ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 120ns | 12 ns | 58 ns | 40A | 16V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 35A | 70A | 45 mJ | 20V | N-Channel | 6110pF @ 10V | 600 mV | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 20V | 1μA | 8 | 8 Weeks | 540.001716mg | 36V | 13V | 25Ohm | 8 | no | No | 4 | e0 | TIN LEAD | 400mW | GULL WING | 240 | 15V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 1 | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60030E-GE3 | Vishay Siliconix | $2.54 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60030ege3-datasheets-5853.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | TO-220AB | 250A | 0.0034Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | Not Qualified | 41 ns | 32 ns | 6V | Dual, Single | 3V | 1 | 20Ohm | BREAK-BEFORE-MAKE | 75ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH14N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh14n65et1ge3-datasheets-5720.pdf | 8-PowerTDFN | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 4V | 156W Tc | 0.26Ohm | 226 mJ | N-Channel | 1712pF @ 100V | 260m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2012 | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 16 Weeks | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | NO | DUAL | 5V | 2.54mm | 8 | 2 | DPST | Multiplexer or Switches | 1 | 6V | 3V | -5V | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120P06-6M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 | 12 Weeks | TO-220AB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG643DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 665.986997mg | 21V | 10V | 15Ohm | 16 | no | VIDEO APPLICATION | unknown | 2 | e0 | TIN LEAD | YES | 600mW | DUAL | GULL WING | 240 | 15V | 16 | 1 | AUDIO/VIDEO SWITCH | 30 | Multiplexer or Switches | 15-3V | 2 | Not Qualified | 70 ns | 50 ns | 15V | Single | 10V | -3V | SEPARATE OUTPUT | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | 140ns | NO/NC | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-GE3 | Vishay Siliconix | $2.73 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM181BIA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG180N60E-GE3 | Vishay Siliconix | $2.43 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg180n60ege3-datasheets-7378.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM185BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P04-13L_GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0413lge3-datasheets-8473.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 13MOhm | 3 | Tin | No | 1 | Single | 83W | 1 | TO-252, (D-Pak) | 3.59nF | 10 ns | 12ns | 16 ns | 40 ns | 50A | 20V | 40V | -1.5V | 3W Ta 136W Tc | 10mOhm | P-Channel | 3590pF @ 20V | 13mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 90nC @ 10V | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM201BEAP1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM40010EL-GE3 | Vishay Siliconix | $28.59 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40010elge3-datasheets-8898.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 120A | 300A | 0.0016Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.6m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60efge3-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 41 ns | 32 ns | 6V | Dual, Single | 3V | 1 | 20Ohm | 20Ohm | BREAK-BEFORE-MAKE | 75ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP050N60E-GE3 | Vishay Siliconix | $6.66 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp050n60ege3-datasheets-0118.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 278W Tc | N-Channel | 3459pF @ 100V | 50mOhm @ 23A, 10V | 5V @ 250μA | 51A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9408DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg9409dnt1e4-datasheets-6670.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 12V | 2.7V | 7Ohm | 16 | yes | No | 1 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 1.88W | QUAD | 260 | 5V | 0.65mm | DG9408 | 16 | 8 | 40 | 1.88W | 1 | 162 ns | 97 ns | 6V | 5V | Multiplexer | 71 ns | Dual, Single | 3V | -5V | 100mA | 7Ohm | 3.9Ohm | 81 dB | 3.6Ohm | BREAK-BEFORE-MAKE | 94ns | 2.7V~12V ±3V~6V | 8:1 | 2nA | 21pF 211pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 555mOhm | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 208W | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 500V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-220AB | 28A | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073102EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-9073102ea-datasheets-0541.pdf | CDIP | 36V | 13V | 16 | No | 900mW | 22V | 7V | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60efge3-datasheets-2218.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 30 ns | 56ns | 56 ns | 91 ns | 47A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 4V | 379W Tc | TO-247AC | 0.065Ohm | N-Channel | 4854pF @ 100V | 67m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7801401XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 14 | 14 | 2 | DUAL | FLAT | 14 | MILITARY | 2 | DPST | Multiplexer or Switches | Not Qualified | 18V | 30mA | 4 | MAKE-BEFORE-BREAK | 600ns | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD401ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siud401edt1ge3-datasheets-2675.pdf | PowerPAK® 0806 | 14 Weeks | PowerPAK® 0806 | 30V | 1.25W Ta | P-Channel | 33pF @ 15V | 1.573Ohm @ 200mA, 10V | 1.4V @ 250μA | 500mA Ta | 2nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL9N60APBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl9n60apbf-datasheets-3597.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | Unknown | 750mOhm | 3 | No | 1 | Single | 170W | 1 | I2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 4V | 170W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2735DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2735dnt1e4-datasheets-4508.pdf | 8-UFQFN | 1.8mm | 550μm | 1.4mm | 1μA | 10 | 14 Weeks | 7.002332mg | 4.3V | 1.65V | 500mOhm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | NO LEAD | 260 | 3V | DG2735 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | R-XQCC-N10 | 50MHz | 78 ns | 58 ns | Single | 4 | 2 | 500mOhm | 70 dB | 0.06Ohm | BREAK-BEFORE-MAKE | 60ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 55pF | 78ns, 58ns | 60m Ω | -70dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | D2PAK | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3157bdnt1e4-datasheets-4600.pdf | 6-UFDFN | 1μA | 14 Weeks | 5.5V | 1.65V | 15Ohm | 6 | No | 160mW | DG3157 | 1 | 6-miniQFN | 300MHz | SPDT | 25 ns | 21 ns | Single | 15Ohm | 2:1 | 1.65V~5.5V | SPDT | 1μA | 7pF | 25ns, 21ns | 7pC | 800mOhm | -64dB @ 10MHz |
