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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Voltage - Output | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Supplied Contents | Frequency - Switching | Main Purpose | Signal Current-Max | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| 2N7002-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 1.437803g | 3 | No | DUAL | GULL WING | 2N7002 | 1 | Single | 1 | FET General Purpose Powers | 115mA | 40V | SILICON | SWITCHING | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2732DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 1μA | 10 | 50.008559mg | 4.3V | 1.65V | 400mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2732 | 10 | 1 | 40 | Multiplexer or Switches | 2 | Not Qualified | 110 ns | 30 ns | Single | SEPARATE OUTPUT | 450mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4403DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4403ddyt1ge3-datasheets-2587.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 5W Tc | 15.4A | 0.014Ohm | P-Channel | 3250pF @ 10V | 14m Ω @ 9A, 4.5V | 1V @ 250μA | 15.4A Tc | 99nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2532DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2532dqt1e3-datasheets-5438.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1μA | 10 | 5.5V | 1.8V | 600mOhm | 10 | yes | 2 | e3 | MATTE TIN | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2532 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | 3V | Not Qualified | 70 ns | 65 ns | Single | 4 | 2 | 600mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 77ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 143pF | 70ns, 65ns | 54pC | 50m Ω (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | 345mOhm | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | SI2309 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 5 ns | 35ns | 35 ns | 15 ns | -1.2A | 20V | SILICON | SWITCHING | 60V | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 12 Weeks | 540.001716mg | No SVHC | 12V | 2.7V | 18.5Ohm | 8 | yes | No | 400mW | DG417 | 8 | 400mW | SPST | 41 ns | 32 ns | 6V | 5V | Dual, Single | 3V | 1 | 20Ohm | 20Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqja68ept1ge3-datasheets-5578.pdf | PowerPAK® SO-8L | 1.267mm | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 45W | 1 | 175°C | R-PSSO-G4 | 9 ns | 15 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 0.092Ohm | 20 pF | 4 mJ | 100V | N-Channel | 280pF @ 25V | 40ns | 25ns | 92m Ω @ 4A, 10V | 2.5V @ 250μA | 14A Tc | 8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | Lead Free | 500μA | 16 | 172.98879mg | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | No | 1 | e3 | Matte Tin (Sn) | 650mW | GULL WING | 260 | 5V | 0.65mm | DG408 | 16 | 8 | 40 | 650mW | 1 | 150 ns | 150 ns | 6V | Multiplexer | Dual, Single | 3V | -5V | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA60EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja60ept1ge3-datasheets-6810.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 45W | 1 | 175°C | R-PSSO-G4 | 9 ns | 21 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 24.6A | 84A | 26 mJ | 60V | N-Channel | 1600pF @ 25V | 12.5m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG642DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | 500MHz | Lead Free | 6mA | 8 | 540.001716mg | No SVHC | 21V | 10V | 15Ohm | 8 | yes | VIDEO APPLICATION | Tin | No | 1 | 3.5mA | e3 | Non-Inverting | 300mW | GULL WING | 260 | 15V | DG642 | 8 | 1 | AUDIO/VIDEO SWITCH | 40 | 300mW | Multiplexer or Switches | 100 ns | 60 ns | 15V | 12V | Dual, Single | 10V | -3V | 2 | 100mA | 1 | 8Ohm | 8Ohm | 63 dB | 0.5Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 20pF 20pF | 100ns, 60ns | 40pC | 500m Ω | -85dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4050EY-T1_GE3 | Vishay Siliconix | $2.90 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4050eyt1ge3-datasheets-7615.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 6W Tc | N-Channel | 2406pF @ 20V | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 19A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9263DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | yes | unknown | 2 | 1μA | e3 | MATTE TIN | 400mW | DUAL | GULL WING | 260 | 3V | DG9263 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | SPST | 75 ns | 50 ns | Single | 2 | SEPARATE OUTPUT | 60Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA26DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sira26dpt1re3-datasheets-8337.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.9W | 150°C | 9 ns | 16 ns | 30.3A | 43.1W Tc | 25V | N-Channel | 2247pF @ 10V | 2.65m Ω @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 44nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9432DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9433dqt1e3-datasheets-5516.pdf | SOT-23-8 | 2.9mm | 1.2mm | 1.65mm | -1μA | 8 | 40.001177mg | 12V | 2.7V | 60Ohm | 8 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 515mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG9432 | 8 | 1 | 10 | 515mW | Multiplexer or Switches | Not Qualified | SPST | 35 ns | 18 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 77 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 100ns | 1:1 | 2.7V~12V | SPST - NC | 1nA | 7.5pF 7.8pF | 35ns, 18ns | 0.36pC | 300m Ω | -96dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 38 ns | 74 ns | -3.3A | 16V | SILICON | SWITCHING | 40V | 1.1W Ta | 30A | 0.054Ohm | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9052DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9052dqt1e3-datasheets-7329.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 3V | 1μA | 16 | 172.98879mg | 12V | 2.7V | 40Ohm | 16 | yes | No | 1 | 1μA | e3 | Matte Tin (Sn) | 925mW | GULL WING | 260 | 5V | 0.65mm | DG9052 | 16 | 4 | 40 | 925mW | 2 | 90 ns | 30 ns | 6V | Multiplexer | 80 ns | Dual, Single | 2.7V | -5V | 8 | 40Ohm | 79 dB | 5Ohm | 50ns | 70ns | 2.7V~12V ±2.7V~6V | 4:1 | SP4T | 1nA | 4pF 8pF | 35ns, 30ns | 38pC | 5 Ω (Max) | -83dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414CENW-T1_GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq7414cenwt1ge3-datasheets-0299.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 60V | 62W Tc | N-Channel | 1590pF @ 30V | 23mOhm @ 8.7A, 10V | 2.5V @ 250μA | 18A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32455EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32454dbt2ge1-datasheets-4013.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32455 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2319ddst1ge3-datasheets-2020.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 40V | 1W Ta 1.7W Tc | P-Channel | 650pF @ 20V | 75mOhm @ 2.7A, 10V | 2.5V @ 250μA | 2.7A Ta 3.6A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32430EVB | Vishay Siliconix | $44.37 |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32430dnt1ge4-datasheets-2298.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32430 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3440DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3440dvt1ge3-datasheets-7527.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 375mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 6 | 1 | Single | 1.14W | 1 | 8 ns | 10ns | 15 ns | 20 ns | 1.5A | 20V | SILICON | SWITCHING | 150V | 4V | 1.14W Ta | N-Channel | 4 V | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 1.2A Ta | 8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12110DB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | /files/vishaysiliconix-sip12110dmpt1ge4-datasheets-9107.pdf | 8 Weeks | 4.5V~15V | SiP12110 | 0.6V~5.5V | 6A | Board(s) | 1MHz | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR862DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir862dpt1ge3-datasheets-6739.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 16ns | 17 ns | 39 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 25V | 25V | 5.2W Ta 69W Tc | 50A | 70A | N-Channel | 3800pF @ 10V | 2.8m Ω @ 15A, 10V | 2.3V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC461EVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7892BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7892bdpt1ge3-datasheets-7461.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 20 ns | 13ns | 13 ns | 62 ns | 25A | 20V | SILICON | DRAIN | 1.8W Ta | 60A | 0.0042Ohm | 30V | N-Channel | 3775pF @ 15V | 4.2m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30393-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9020TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 42W | 1 | Other Transistors | R-PSSO-G2 | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | -4V | 42W Tc | 40A | 250 mJ | -50V | P-Channel | 490pF @ 25V | -2 V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP32N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp32n50k-datasheets-5497.pdf | 500V | 32A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 11 Weeks | 38.000013g | No SVHC | 135mOhm | 3 | Tin | No | 1 | Single | 460W | 1 | TO-247-3 | 5.28nF | 28 ns | 120ns | 54 ns | 48 ns | 32A | 30V | 500V | 5V | 460W Tc | 160mOhm | 500V | N-Channel | 5280pF @ 25V | 5 V | 160mOhm @ 32A, 10V | 5V @ 250μA | 32A Tc | 190nC @ 10V | 160 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4630DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4630dyt1e3-datasheets-7093.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | 17 ns | 93ns | 9 ns | 60 ns | 36A | 16V | SILICON | SWITCHING | 1V | 3.5W Ta 7.8W Tc | 27A | 70A | 0.0027Ohm | 45 mJ | 25V | N-Channel | 6670pF @ 15V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC430 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant |
