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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4565ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4565adyt1e3-datasheets-4456.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 506.605978mg | 8 | 3.1W | SI4565 | 2 | 8-SO | 625pF | 21 ns | 90ns | 56 ns | 33 ns | 5.6A | 16V | 40V | 3.1W | 54mOhm | 40V | N and P-Channel | 625pF @ 20V | 39mOhm @ 5A, 10V | 2.2V @ 250μA | 6.6A 5.6A | 22nC @ 10V | Standard | 39 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 12V | Lead Free | 500μA | 28 | 10 Weeks | 4.190003g | 36V | 7.5V | 100Ohm | 28 | yes | Tin | unknown | 1 | e3 | 625mW | NOT SPECIFIED | 15V | 2.54mm | DG406 | 28 | 16 | NOT SPECIFIED | 625mW | 1 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 148 ns | Dual, Single | 5V | -15V | 30mA | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4923DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4923dyt1ge3-datasheets-2270.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 15 ns | 10ns | 10 ns | 135 ns | 6.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.021Ohm | -30V | 2 P-Channel (Dual) | 21m Ω @ 8.3A, 10V | 3V @ 250μA | 70nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 40Ohm | 8 | yes | No | 1 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG418 | 8 | 1 | 30 | 400mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 2 | Other Transistors | Not Qualified | 2.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.1A | 0.075Ohm | N and P-Channel | 75m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-TSSOP (0.173, 4.40mm Width) | 20 | 15 Weeks | No SVHC | 40V | 5V | 45Ohm | 20 | No | 4 | YES | DUAL | GULL WING | 15V | 0.635mm | 4 | Multiplexer or Switches | 1 | 22V | 4V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6933DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6933dqt1e3-datasheets-2333.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 45mOhm | 8 | EAR99 | e3 | MATTE TIN | 1W | GULL WING | 260 | 8 | Dual | 40 | 1W | 2 | Not Qualified | 13 ns | 10ns | 10 ns | 33 ns | -2.3A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 3.5A | -30V | 2 P-Channel (Dual) | 45m Ω @ 3.5A, 10V | 1V @ 250μA (Min) | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2536DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2536dqt1e3-datasheets-8379.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 3V | 1μA | 10 | 12 Weeks | 3.3V | 2.7V | 500mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2536 | 10 | 1 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 82 ns | 73 ns | Single | SEPARATE OUTPUT | 500mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | NO/NC | 2:1 | SPDT | 1nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6993DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6993dqt1e3-datasheets-4694.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | SI6993 | 8 | Dual | 830mW | 2 | Other Transistors | 13 ns | 14ns | 14 ns | 52 ns | -4.7A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6A | 0.031Ohm | 2 P-Channel (Dual) | 31m Ω @ 4.7A, 10V | 3V @ 250μA | 3.6A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 20 Weeks | No SVHC | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 0.65mm | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | -5V | 23Ohm | 51ns | 80ns | 3V~16V ±3.3V~8V | 4:1 | SP4T | 1nA | 5.5pF 13.5pF | 72ns, 47ns | -10pC | 1 Ω | -109dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7909DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7909dnt1e3-datasheets-2419.pdf | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | 12V | 1.3W | 2 P-Channel (Dual) | 37mOhm @ 7.7A, 4.5V | 1V @ 700μA | 5.3A | 24nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LEDJ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442ledyt1ge3-datasheets-7337.pdf | 16-PowerDIP (0.300, 7.62mm) | 16 Weeks | 26Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 26Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 6.6pC | 100m Ω | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6955ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6955adqt1ge3-datasheets-2330.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 830mW | GULL WING | 260 | 8 | Dual | 40 | 830mW | 2 | Not Qualified | 8 ns | 9ns | 9 ns | 21 ns | 2.5A | 20V | SILICON | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | 2 P-Channel (Dual) | 80m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9426EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9425edqt1ge3-datasheets-1380.pdf | 16-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 3Ohm | 16 | NOT SPECIFIED | NOT SPECIFIED | 4 | 3Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7113ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7113adnt1ge3-datasheets-3802.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 1 | 150°C | S-PDSO-F5 | 10 ns | 20 ns | -3.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 27.8W Tc | 20A | -100V | P-Channel | 515pF @ 50V | 132m Ω @ 3.8A, 10V | 2.6V @ 250μA | 10.8A Tc | 16.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 50μA | 16 | 13 Weeks | 665.986997mg | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 100μA | e3 | Matte Tin (Sn) | Inverting | 640mW | GULL WING | 260 | 15V | 1.27mm | DG201 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 30mA | 4 | 85Ohm | 45Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2316dst1e3-datasheets-5080.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50mOhm | 3 | yes | EAR99 | No | 2A | e3 | Matte Tin (Sn) | 30V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | FET General Purpose Power | 9 ns | 9ns | 9 ns | 14 ns | 3.4A | 20V | SILICON | SWITCHING | 700mW Ta | N-Channel | 215pF @ 15V | 800 mV | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 2.9A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 12 Weeks | 1.627801g | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 470mW | NOT SPECIFIED | 15V | DG411 | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4966DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 25mOhm | 8 | EAR99 | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4966 | 8 | 2 | Dual | 40 | 2W | 2 | Not Qualified | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 20V | 2 N-Channel (Dual) | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 1μA | 8 | 139.989945mg | Unknown | 12V | 2.7V | 20Ohm | 8 | yes | VIDEO APPLICATION | No | 1 | 20nA | e3 | Matte Tin (Sn) | 5V | 320mW | GULL WING | 260 | 5V | 0.65mm | DG419 | 8 | 1 | 40 | 320mW | Multiplexer or Switches | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 2 | 1 | 20Ohm | 35Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2004 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | CDIP | 15 Weeks | 1.200007g | 14 | No | 2W | 4 | 1.3W | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1Ohm | 30V | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | 16 | no | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 16 | Multiplexer or Switches | 5+-15V | 2 | Not Qualified | R-PDSO-G16 | SEPARATE OUTPUT | 45Ohm | BREAK-BEFORE-MAKE | 150ns | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA16DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir662dpt1ge3-datasheets-0190.pdf | PowerPAK® SO-8 | 14 Weeks | Unknown | 8 | EAR99 | 3.9W | NOT SPECIFIED | SIRA16 | NOT SPECIFIED | 16A | 30V | N-Channel | 2060pF @ 15V | 6.8m Ω @ 15A, 10V | 2.3V @ 250μA | 16A Ta | 47nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 1μA | 16 | 665.986997mg | No SVHC | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 25Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH101DN-T1-GE3 | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish101dnt1ge3-datasheets-7796.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | P-Channel | 3595pF @ 15V | 7.2mOhm @ 15A, 10V | 2.5V @ 250μA | 16.9A Ta 35A Tc | 102nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2010 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 35Ohm | 16 | no | Lead, Tin | No | 4 | e0 | Tin/Lead (Sn/Pb) | Non-Inverting | 600mW | GULL WING | 1.27mm | 16 | 600mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 30mA | 4 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 54mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 12 ns | 74 ns | -4.5A | 16V | SILICON | SWITCHING | 40V | -2.2V | 1.1W Ta | 3.3A | 30A | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200bdje3-datasheets-2765.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 50μA | 14 | 8 Weeks | 1.620005g | Unknown | 36V | 13V | 85Ohm | 14 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 14 | 470mW | Multiplexer or Switches | 1 μs | 425 ns | 22V | 15V | Dual | 7V | -15V | 2 | SEPARATE OUTPUT | 85Ohm | 70Ohm | BREAK-BEFORE-MAKE | 1000ns | NC | 1:1 | SPST - NC | ±15V | 2nA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-CDIP (0.300, 7.62mm) | 50μA | 15 Weeks | 25V | 4.5V | 85Ohm | 16 | No | 900mW | 4 | 16-CERDIP | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 85Ohm | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz |
