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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIHH24N65E-T1-GE3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh24n65et1ge3-datasheets-6253.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 23A | 650V | 202W Tc | N-Channel | 2814pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF30PBF | Vishay Siliconix | $19.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf30pbf-datasheets-6551.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | 3.7Ohm | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9262DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | no | unknown | 400mW | 8 | 400mW | 75 ns | 50 ns | Single | 2 | 60Ohm | 40Ohm | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50PBF | Vishay Siliconix | $4.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | 900V | 6.7A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.6Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 4V | 190W Tc | 920 ns | 1.6Ohm | 900V | N-Channel | 2900pF @ 25V | 2 V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 1μA | 16 | 1.627801g | Unknown | 18V | 10V | 45Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | SPST | 470mW | Multiplexer or Switches | 1 | 35 ns | 25 ns | 15V | Dual, Single | 10V | 4 | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfu110pbf-datasheets-7868.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 25W | 1 | FET General Purpose Power | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 25W Tc | 75 mJ | 100V | N-Channel | 180pF @ 25V | 540m Ω @ 900mA, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM181BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | 14 | 825mW | 18V | 10V | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfd020pbf-datasheets-8701.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 3 | 8 Weeks | Unknown | 100mOhm | 4 | EAR99 | No | DUAL | 3 | Single | 1.3W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.7 ns | 55ns | 26 ns | 16 ns | 2.4A | 20V | SILICON | SWITCHING | 50V | 4V | 1W Tc | 60V | N-Channel | 400pF @ 25V | 100m Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM190BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N06-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0609lge3-datasheets-9517.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 136W | 1 | TO-252, (D-Pak) | 3.065nF | 10 ns | 11ns | 8 ns | 27 ns | 50A | 20V | 60V | 2V | 136W Tc | 9mOhm | 60V | N-Channel | 3065pF @ 25V | 9mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 72nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM301BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 36V | 13V | 14 | 1 | 22V | 7V | 2 | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfpc60pbf-datasheets-9807.pdf | 600V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 1 | Single | 280W | 1 | TO-247-3 | 3.9nF | 19 ns | 54ns | 56 ns | 110 ns | 16A | 20V | 600V | 4V | 280W Tc | 920 ns | 400mOhm | 600V | N-Channel | 3900pF @ 25V | 4 V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 210nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM304BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | /files/vishay-sjm304bca01-datasheets-0210.pdf | CDIP | 36V | 13V | 22V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD403ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud403edt1ge3-datasheets-1702.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.25W Ta | P-Channel | 31pF @ 10V | 1.25 Ω @ 300mA, 4.5V | 900mV @ 250μA | 500mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8671601EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16 | 4 | NO | DUAL | THROUGH-HOLE | 15V | 2.54mm | 16 | MILITARY | 125°C | -55°C | SPST | Multiplexer or Switches | +-15V | Not Qualified | R-XDIP-T16 | 38535Q/M;38534H;883B | -15V | SEPARATE OUTPUT | 75Ohm | BREAK-BEFORE-MAKE | 50ns | NC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp25n60eflge3-datasheets-2035.pdf | TO-220-3 | 19.31mm | 21 Weeks | 1 | 250W | 150°C | 25 ns | 47 ns | 25A | 30V | 250W Tc | 600V | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7801401CA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | DIP | 14 | 14 | no | 2 | 825mW | DUAL | 14 | MILITARY | 2 | DPST | 825mW | Multiplexer or Switches | Not Qualified | 18V | 30mA | 4 | MAKE-BEFORE-BREAK | 900ns | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg73n60aege3-datasheets-2318.pdf | TO-247-3 | 25.11mm | 14 Weeks | 1 | 417W | 150°C | 43 ns | 212 ns | 60A | 30V | 417W Tc | 600V | N-Channel | 5500pF @ 100V | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 60A Tc | 394nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9068901EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-9068901ea-datasheets-0565.pdf | 16 | 2 | 900mW | 18V | 10V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA14BDP-T1-GE3 | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira14bdpt1ge3-datasheets-3342.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.7W Ta 36W Tc | N-Channel | 917pF @ 15V | 5.38mOhm @ 10A, 10V | 2.2V @ 250μA | 21A Ta 64A Tc | 22nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2011DXA-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2011dxat1e3-datasheets-3982.pdf | SOT-563, SOT-666 | Lead Free | 1μA | 6 | 14 Weeks | Unknown | 5.5V | 1.8V | 2.7Ohm | 6 | yes | 1 | 10nA | e3 | Matte Tin (Sn) | 172mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2011 | 6 | 1 | 40 | 172mW | Multiplexer or Switches | Not Qualified | 75 ns | 59 ns | Single | 2 | 1 | 2.7Ohm | 1.8Ohm | 62 dB | 0.2Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 1nA | 29pF | 75ns, 59ns | 2pC | 200m Ω (Max) | -69dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC40PBF | Vishay Siliconix | $2.84 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc40pbf-datasheets-3826.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.8A | 20V | 600V | 4V | 150W Tc | 940 ns | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 4 V | 1.2Ohm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4051AEN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | -1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg4051aent1e4-datasheets-4533.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 330MHz | Lead Free | 1μA | 16 | Unknown | 12V | 2.7V | 100Ohm | 16 | yes | Gold | 1 | 50nA | 525mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG4051 | 16 | 8 | 40 | 525mW | 1 | Not Qualified | 151 ns | 138 ns | 5V | 3V | Multiplexer | 172 ns | Dual, Single | 2.5V | -3V | 30mA | 8 | 100Ohm | 67 dB | 3Ohm | BREAK-BEFORE-MAKE | 2.7V~12V ±2.5V~5V | 8:1 | 1nA | 3pF 12pF | 108ns, 92ns | 0.25pC | 3 Ω | -67dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp33n60ege3-datasheets-4563.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 278W | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 2V | 278W Tc | TO-220AB | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9422DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9422dvt1e3-datasheets-4676.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 1μA | 14 Weeks | 19.986414mg | No SVHC | 12V | 2.7V | 3Ohm | 6 | yes | No | 20nA | 570mW | DG9422 | 6 | 570mW | SPST | 45 ns | 47 ns | 6V | Dual, Single | 2.7V | 1 | 3Ohm | 3Ohm | 2.7V~12V ±2.7V~6V | 1:1 | SPST - NO | 1nA | 31pF 30pF | 45ns, 47ns | 43pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | 100V | 4.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 540MOhm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 250pF | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | 100V | 2V | 2.5W Ta 25W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | BICMOS | 1μA | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 16 | 12V | 2.7V | 50Ohm | 16 | yes | No | 4 | 20nA | e3 | Matte Tin (Sn) | GULL WING | 260 | 5V | 0.65mm | DG413 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 280MHz | SPST | 6V | 5V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD9N60E-GE3 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd9n60ege3-datasheets-7757.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 18 Weeks | 1 | 78W | 150°C | 14 ns | 31 ns | 9A | 30V | 78W Tc | 600V | N-Channel | 778pF @ 100V | 368m Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2035DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2035dqt1e3-datasheets-5334.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1μA | 10 | 5.5V | 1.8V | 1Ohm | 10 | yes | No | 2 | 10nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2035 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | 3V | 58 ns | 49 ns | Single | 4 | 2 | 1Ohm | 71 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 2nA | 117pF | 58ns, 49ns | 4pC | 50m Ω (Max) | -71dB @ 100kHz |
