Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Data Rate | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQD25N15-52_GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 107W | 1 | TO-252, (D-Pak) | 2.2nF | 11 ns | 11ns | 6 ns | 20 ns | 25A | 20V | 150V | 3V | 107W Tc | 52mOhm | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM184BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 14 | 18V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM304BIA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG039N60E-GE3 | Vishay Siliconix | $7.43 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60ege3-datasheets-0082.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4369pF @ 100V | 39mOhm @ 32A, 10V | 5V @ 250μA | 63A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3535DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.753mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 1.5mm | 1μA | 10 | 6V | 1.8V | 400mOhm | 10 | yes | VIDEO APPLICATION | No | 2 | 1nA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | 10 | 1 | 40 | Multiplexer or Switches | 3V | 2 | 82 ns | 73 ns | Single | SEPARATE OUTPUT | 400mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP340PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp340pbf-datasheets-1883.pdf | 400V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 550mOhm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 11A | 20V | 400V | 4V | 150W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM185BEA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHS36N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihs36n50de3-datasheets-2207.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.3mm | 3 | 8 Weeks | 38.000013g | Unknown | 247 | No | 1 | Single | 446W | 1 | R-PSIP-T3 | 33 ns | 89ns | 68 ns | 79 ns | 36A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 446W Tc | TO-274AA | 332 mJ | N-Channel | 3233pF @ 100V | 130m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9076401EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP17N50LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp17n50lpbf-datasheets-2660.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-247-3 | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 320mOhm | N-Channel | 2760pF @ 25V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM304BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N06-6M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sup90n066m0pe3-datasheets-3582.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | 3 | EAR99 | No | SUP90N06 | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 16 ns | 10ns | 8 ns | 25 ns | 90A | 20V | 60V | SILICON | SWITCHING | 3.75W Ta 272W Tc | TO-220AB | 240A | 0.006Ohm | 60V | N-Channel | 4700pF @ 30V | 6m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2720DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2720dnt1e4-datasheets-4490.pdf | 10-UFQFN | 1.8mm | 550μm | 1.4mm | 3V | 620MHz | Lead Free | 10 | 14 Weeks | 7.002332mg | 4.3V | 2.6V | 7Ohm | 10 | yes | unknown | 1 | 2μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | NO LEAD | 260 | 3V | DG2720 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | 2 | Not Qualified | 480 Mbps | 30 ns | 25 ns | Single | 4 | 7Ohm | 30 dB | 0.35Ohm | BREAK-BEFORE-MAKE | 2:2 | 2.6V~4.3V | DPDT | 100nA | 4pF | 30ns, 25ns | 0.5pC | 350m Ω | -49dB @ 240MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf22n60ee3-datasheets-6204.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 180mOhm | 3 | yes | No | 1 | Single | 35W | 1 | 18 ns | 27ns | 35 ns | 66 ns | 21A | 20V | SILICON | SWITCHING | 2V | 35W Tc | TO-220AB | 56A | 600V | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 44V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | DG411 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 250MOhm | 3 | No | 1 | Single | 470W | 1 | TO-247-3 | 5.02nF | 31 ns | 110ns | 42 ns | 47 ns | 26A | 30V | 600V | 5V | 470W Tc | 210mOhm | 600V | N-Channel | 5020pF @ 25V | 5 V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG612 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 15-3V | 500MHz | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU2N80E-GE3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu2n80ege3-datasheets-7575.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 9.78mm | 18 Weeks | 1 | 62.5W | 150°C | IPAK (TO-251) | 11 ns | 19 ns | 2.8A | 30V | 800V | 62.5W Tc | 2.38Ohm | 800V | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2019DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2019dnt1e4-datasheets-5316.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | No SVHC | 5.5V | 1.8V | 8Ohm | 16 | yes | No | 4 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 850mW | QUAD | 260 | 3V | 0.5mm | DG2019 | 16 | 1 | 40 | 850mW | Multiplexers or Switches | 3/5V | 180MHz | 48 ns | 33 ns | Single | 8 | 4 | 8Ohm | 54 dB | 3Ohm | BREAK-BEFORE-MAKE | 35ns | 65ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 7.5pF | 48ns, 33ns | -2.46pC | 600m Ω | -72dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40010EL-GE3 | Vishay Siliconix | $9.33 |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup40010elge3-datasheets-8071.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | TO-220AB | 120A | 300A | 0.0018Ohm | 320 mJ | N-Channel | 11155pF @ 30V | 1.8m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2041DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2043dnt1e4-datasheets-5348.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 5.5V | 1.8V | 1.5Ohm | yes | No | 4 | Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier | 1.88W | QUAD | 260 | 2V | 0.65mm | DG2041 | 16 | 1 | 30 | Multiplexer or Switches | 2/5V | 4 | S-XQCC-N16 | SPST | 42 ns | 32 ns | Single | SEPARATE OUTPUT | 1.5Ohm | 63 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 82ns | NC | 1:1 | 1.8V~5.5V | SPST - NC | 26pF | 42ns, 32ns | 3pC | 300m Ω (Max) | -93dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3457EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sq3457evt1ge3-datasheets-9122.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 5W | 1 | 6-TSOP | 6 ns | 9ns | 6 ns | 18 ns | 6.8A | 20V | 30V | 5W Tc | P-Channel | 705pF @ 15V | 65mOhm @ 6A, 10V | 2.5V @ 250μA | 6.8A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2718DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2718dnt1e4-datasheets-5386.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | 3.6V | 1.65V | 600mOhm | 16 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.385W | QUAD | NO LEAD | 260 | 1.8V | 0.5mm | DG2718 | 16 | 2 | 40 | Multiplexer or Switches | 1.8/3V | 2 | Not Qualified | 57 ns | 45 ns | Single | SEPARATE OUTPUT | 600mOhm | 74 dB | BREAK-BEFORE-MAKE | 55ns | 94ns | 2:2 | 1.65V~3.6V | DPDT | 1nA | 102pF | 57ns, 45ns | 232pC | 50m Ω | -75dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1013X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1013rt1ge3-datasheets-5895.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 250mW | 1 | Other Transistors | 5 ns | 9ns | 9 ns | 35 ns | -400mA | 6V | SILICON | SWITCHING | 20V | -450mV | 250mW Ta | -20V | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 350mA Ta | 1.5nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2535DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2536dqt1e3-datasheets-8379.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 3V | 1μA | 10 | 10 Weeks | 50.008559mg | 6V | 1.8V | 500mOhm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.191W | QUAD | NO LEAD | 260 | 3V | 0.5mm | DG2535 | 10 | 1 | 40 | 1.191W | Multiplexer or Switches | 3V | Not Qualified | 82 ns | 73 ns | Single | 4 | 2 | 500mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | NO/NC | 2:1 | SPDT | 1nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2366DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2366dst1ge3-datasheets-2125.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 5 ns | 12ns | 8 ns | 14 ns | 5.8A | 20V | SILICON | SWITCHING | 30V | 1.2V | 1.25W Ta 2.1W Tc | N-Channel | 335pF @ 15V | 1.2 V | 36m Ω @ 4.5A, 10V | 2.5V @ 250μA | 5.8A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2733DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1mA | 10 | No SVHC | 4.3V | 1.65V | 400mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2733 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 110 ns | 30 ns | Single | 4 | 2 | 450mOhm | 300mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7615CDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si7615cdnt1ge3-datasheets-3458.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 20V | 33W Tc | P-Channel | 3860pF @ 10V | 9m Ω @ 12A, 4.5V | 1V @ 250μA | 35A Tc | 63nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3535ADB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 400mOhm | 10 | DG3535 | 2 | 10-Micro Foot® (2x1.5) | SPDT | Single | 400mOhm | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50mOhm (Max) | -69dB @ 100kHz |
