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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Data Rate | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG3539DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3539 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6966EDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6966edqt1e3-datasheets-2342.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 157.991892mg | 30mOhm | 8 | 1.25W | SI6966 | 2 | Dual | 1.25W | 2 | 8-TSSOP | 100 ns | 130ns | 130 ns | 420 ns | 5.2A | 12V | 20V | 1.25W | 30mOhm | 20V | 2 N-Channel (Dual) | 30mOhm @ 5.2A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2722DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2722dnt1e4-datasheets-8533.pdf | 10-UFQFN | 1.8mm | 550μm | 1.4mm | 3V | 900MHz | 10 | 7.002332mg | 4.3V | 2.6V | 8Ohm | 10 | No | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 208mW | QUAD | 260 | 3V | DG2722 | 10 | 1 | 30 | 208mW | Multiplexer or Switches | 3V | 2 | 480 Mbps | 30 ns | 25 ns | Single | 4 | 8Ohm | 30 dB | 0.8Ohm | BREAK-BEFORE-MAKE | 2:2 | 2.6V~4.3V | DPDT | 100nA | 2.2pF | 30ns, 25ns | 0.5pC | 800m Ω | -45dB @ 240MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4834CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4834cdyt1e3-datasheets-2250.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.9W | GULL WING | 260 | SI4834 | 8 | 2 | Dual | 30 | 2 | 17 ns | 12ns | 10 ns | 7.5A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 160Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 640mW | GULL WING | 260 | 15V | 1.27mm | DG444 | 16 | 1 | 40 | Multiplexer or Switches | 4 | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7925DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7925dnt1e3-datasheets-2425.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 42mOhm | 1.3W | 2 | Dual | PowerPAK® 1212-8 Dual | 20 ns | 50ns | 50 ns | 70 ns | 4.8A | 8V | 12V | 1.3W | 42mOhm | 2 P-Channel (Dual) | 42mOhm @ 6.5A, 4.5V | 1V @ 250μA | 4.8A | 12nC @ 4.5V | Logic Level Gate | 42 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 12 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | 15V | 2.54mm | DG417 | 8 | 1 | Multiplexer or Switches | 1 | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA485DJ-T1-GE3 | Vishay Siliconix | $2.87 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia485djt1ge3-datasheets-3092.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 15.6W Tc | 1.6A | 2A | 2.7Ohm | 0.1 mJ | P-Channel | 155pF @ 75V | 2.6 Ω @ 500mA, 10V | 4.5V @ 250μA | 1.6A Tc | 6.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3257DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg3257dnt1ge4-datasheets-5873.pdf | 6-XFDFN | 19 Weeks | unknown | 1 | 714MHz | 6Ohm | 2:1 | 1.65V~5.5V | SPDT | 3pF 9pF | 50ns, 45ns | 4pC | 600m Ω | -32dB @ 240MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8499DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8499dbt2e1-datasheets-4241.pdf | 6-UFBGA | Lead Free | 6 | 21 Weeks | No SVHC | 32MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 6 | 1 | Single | 30 | 2.77W | 1 | Other Transistors | 10ns | 30 ns | 55 ns | 7.8A | 12V | SILICON | SWITCHING | 20V | -500mV | 2.77W Ta 13W Tc | 20A | -20V | P-Channel | 1300pF @ 10V | 32m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 16A Tc | 30nC @ 5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | 44V | 13V | 80Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG412 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ900DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz900dtt1ge3-datasheets-5706.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | 8 | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | DUAL | C BEND | SIZ900 | 8 | 2 | 2 | FET General Purpose Power | 10 ns | 24A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 48W 100W | 90A | 30V | 2 N-Channel (Half Bridge) | 1830pF @ 15V | 7.2m Ω @ 19.4A, 10V | 2.4V @ 250μA | 24A 28A | 45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | TSSOP | 20 | 15 Weeks | No SVHC | 40V | 5V | 45Ohm | 20 | No | 4 | YES | DUAL | GULL WING | 15V | 0.635mm | 4 | Multiplexer or Switches | 1 | 20-TSSOP | 22V | 4V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | PDIP | 14 | 18 Weeks | 14 | EAR99 | 8541.29.00.75 | NO | 2W | DUAL | 4 | Not Qualified | 14-DIP | 830mA | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.83A | 3A | 1Ohm | 35 pF | 4 N-Channel | 110pF @ 15V | 30ns | 30ns | 1.75 Ω @ 200mA, 5V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | 85°C | -40°C | 20μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 100μA | 8 Weeks | 722.005655mg | 36V | 13V | 150Ohm | 20 | No | 800mW | DG429 | 2 | 800mW | 2 | 20-PLCC (9x9) | 300 ns | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | 2 | 8 | 100Ohm | 12V ±15V | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4830CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4830cdyt1ge3-datasheets-1925.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.9W | DUAL | GULL WING | 260 | SI4830 | 8 | 2 | 30 | 2 | 17 ns | 12ns | 12 ns | 18 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.5A | 30V | 2 N-Channel (Half Bridge) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 25Ohm | 8 | no | No | 4 | e0 | TIN LEAD | 400mW | 15V | 2.54mm | DG418 | 8 | 1 | 400mW | Multiplexer or Switches | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 99ns | NC | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIAA00DJ-T1-GE3 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa40djt1ge3-datasheets-7512.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 25V | 3.5W Ta 19.2W Tc | N-Channel | 1090pF @ 12.5V | 5.6mOhm @ 15A, 10V | 2.5V @ 250μA | 20.1A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1412EN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-VQFN Exposed Pad | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | QUAD | 5V | 0.65mm | DG1412 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS128LDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis128ldnt1ge3-datasheets-8251.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 80V | 3.6W Ta 39W Tc | N-Channel | 1250pF @ 40V | 15.6mOhm @ 10A, 10V | 2.5V @ 250μA | 10.2A Ta 33.7A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG183BP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -25°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 15Ohm | 16 | Yes | 2 | 16-DIP | 18V | 10V | 15Ohm | 2:1 | DPST - NO | ±15V | 15nA | 21pF 17pF | 600ns, 220ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS407ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407adnt1ge3-datasheets-9675.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 1 | 150°C | R-PDSO-F5 | 12 ns | 4ns | 36 ns | 120 ns | -16.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 3.7W Ta 39.1W Tc | 0.009Ohm | -20V | P-Channel | 5875pF @ 10V | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 18A Tc | 168nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | TO-100-10 Metal Can | 9.4mm | 4.7mm | 9.4mm | 15V | 2mA | 36V | 13V | 70Ohm | 10 | No | 450mW | 2 | 450mW | 2 | TO-100-10 | 1 μs | 425 ns | 22V | 15V | Dual | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ480E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq480et1ge3-datasheets-1251.pdf | 8-PowerTDFN | 4 | 14 Weeks | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 136W Tc | 150A | 210A | 0.003Ohm | 140 mJ | N-Channel | 8625pF @ 25V | 3m Ω @ 20A, 10V | 3.5V @ 250μA | 150A Tc | 144nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2000 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 50μA | 16 | 6 Weeks | 1.627801g | No SVHC | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | +-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | -200V | -3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 14A | 200V | 1 | Single | 42W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | -3.6A | 20V | 200V | -4V | 2.5W Ta 42W Tc | 300 ns | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | -4 V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2711DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2711dlt1ge3-datasheets-7686.pdf | 6-TSSOP, SC-88, SOT-363 | 1 | SC-70-6 | 600mOhm | 2:1 | 1.6V~3.6V | SPDT | 1nA | 70pF | 46ns, 38ns | 28pC | 70mOhm (Max) | -56dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz34pbf-datasheets-3177.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.2nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 4V | 88W Tc | 50mOhm | N-Channel | 1200pF @ 25V | 4 V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 4.5mA | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg201hsdyt1-datasheets-7679.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 16.5V | Contains Lead | 10mA | 16 | 8 Weeks | 547.485991mg | 25V | 13V | 50Ohm | 16 | no | No | 4 | 4.5mA | e0 | Tin/Lead (Sn/Pb) | Inverting | 600mW | GULL WING | 15V | 1.27mm | 16 | 600mW | Multiplexer or Switches | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 50Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfpe50pbf-datasheets-4213.pdf | 800V | 7.8A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.2Ohm | 3 | 5.45mm | No | 1 | Single | 190W | 1 | TO-247-3 | 3.1nF | 19 ns | 38ns | 39 ns | 120 ns | 7.8A | 20V | 800V | 800V | 4V | 190W Tc | 980 ns | 1.2Ohm | 800V | N-Channel | 3100pF @ 25V | 4 V | 1.2Ohm @ 4.7A, 10V | 4V @ 250μA | 7.8A Tc | 200nC @ 10V | 1.2 Ω | 10V | ±20V |
