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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Evaluation Kit | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Function | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Voltage - Output | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Frequency - Switching | Main Purpose | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG2042DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2043dnt1e4-datasheets-5348.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 5.5V | 1.8V | 1.5Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 450mW | DUAL | GULL WING | 260 | 2V | 0.65mm | DG2042 | 16 | 1 | 30 | 450mW | Multiplexer or Switches | 2/5V | SPST | 42 ns | 32 ns | Single | 4 | SEPARATE OUTPUT | 1.5Ohm | 63 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 82ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 26pF | 42ns, 32ns | 3pC | 300m Ω (Max) | -93dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5468DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5468dct1ge3-datasheets-1673.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 28MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 2.3W | 1 | 5 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.3W Ta 5.7W Tc | 6A | N-Channel | 435pF @ 15V | 28m Ω @ 6.8A, 10V | 2.5V @ 250μA | 6A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32103EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32101dbt1ge1-datasheets-4693.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32103 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120TRLPBF | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 600MOhm | 3 | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | 2.5W Ta 42W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9121DB-3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 70°C | -10°C | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-si9121dy3t1e3-datasheets-7766.pdf | SOIC | No | Yes | -10V~-60V | Si9121 | 3.3V | 400mA | Board(s) | 95kHz | DC/DC Converter | Fully Populated | 1, Non-Isolated | Buck-Boost | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR464DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir464dpt1ge3-datasheets-6315.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.1mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 69W | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 35 ns | 16ns | 16 ns | 48 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5.2W Ta 69W Tc | 29.5A | 70A | 30V | N-Channel | 3545pF @ 15V | 3.1m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC431BEVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS606BDN-T1-GE3 | Vishay Siliconix | $5.16 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis606bdnt1ge3-datasheets-7292.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 100V | 3.7W Ta 52W Tc | 14.5mOhm | N-Channel | 1470pF @ 50V | 17.4mOhm @ 10A, 10V | 4V @ 250μA | 9.4A Ta 35.3A Tc | 30nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC437BEVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1N60ATRLPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 36W | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 36W Tc | 7Ohm | 600V | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG32N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg32n50de3-datasheets-9768.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 27 ns | 75ns | 55 ns | 58 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3V | 390W Tc | TO-247AC | 89A | 225 mJ | N-Channel | 2550pF @ 100V | 150m Ω @ 16A, 10V | 5V @ 250μA | 30A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR020TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr020trpbf-datasheets-8493.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 100mOhm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1403BDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1403bdlt1e3-datasheets-0031.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 6 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | 13 ns | 30ns | 28 ns | 1.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 625mW Ta | 0.15Ohm | P-Channel | 150m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 1.5A Ta | 4.5nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR638DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir638dpt1ge3-datasheets-9150.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 104W Tc | N-Channel | 10500pF @ 20V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 204nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg70n60efge3-datasheets-2460.pdf | TO-247-3 | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 520W Tc | TO-247AC | 229A | 0.038Ohm | 1706 mJ | N-Channel | 7500pF @ 100V | 38m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 380nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD100N04-3M6_GE3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n043m6ge3-datasheets-8900.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 136W Tc | TO-252AA | 100A | 400A | 0.0036Ohm | 192 mJ | N-Channel | 6700pF @ 25V | 3.6m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF8N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf8n50de3-datasheets-3095.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 33W | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 33W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH14N60EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh14n60eft1ge3-datasheets-0533.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 15A | 600V | 4V | 147W Tc | N-Channel | 1449pF @ 100V | 266m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 4V | 3.1W Ta 50W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7613DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7613dnt1ge3-datasheets-2466.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | Other Transistors | S-XDSO-C5 | 14 ns | 7ns | 9 ns | 42 ns | 17A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 3.8W Ta 52.1W Tc | 35A | 60A | -20V | P-Channel | 2620pF @ 10V | 8.7m Ω @ 17A, 10V | 2.2V @ 250μA | 35A Tc | 87nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR870ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir870adpt1ge3-datasheets-6229.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 1 | Single | 104W | 1 | FET General Purpose Powers | 150°C | R-PDSO-C5 | 13 ns | 15ns | 9 ns | 35 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3V | 6.25W Ta 104W Tc | 300A | 0.007Ohm | 100V | N-Channel | 2866pF @ 50V | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4168DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4168dyt1ge3-datasheets-3515.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 25 ns | 14ns | 15 ns | 30 ns | 24mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5.7W Tc | 24A | 0.0057Ohm | 30V | N-Channel | 1720pF @ 15V | 5.7m Ω @ 20A, 10V | 3V @ 250μA | 24A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392ADS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2392adst1ge3-datasheets-7821.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 1.25W | 1 | 150°C | 8 ns | 10 ns | 2.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3V | 1.25W Ta 2.5W Tc | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4116DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4116dyt1e3-datasheets-4103.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8.6MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 13 ns | 11ns | 15 ns | 50 ns | 12.7A | 12V | SILICON | SWITCHING | 25V | 25V | 2.5W Ta 5W Tc | N-Channel | 1925pF @ 15V | 8.6m Ω @ 10A, 10V | 1.4V @ 250μA | 18A Tc | 56nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4090DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4090dyt1ge3-datasheets-8780.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 10MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3.5W | 1 | 16 ns | 36 ns | 19.7A | 20V | SILICON | SWITCHING | 2V | 3.5W Ta 7.8W Tc | 100V | N-Channel | 2410pF @ 50V | 10m Ω @ 15A, 10V | 3.3V @ 250μA | 19.7A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM100N10-10_GE3 | Vishay Siliconix | $2.64 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n1010ge3-datasheets-6088.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | 1 | 375W | 1 | TO-263 (D2Pak) | 8.05nF | 13 ns | 14ns | 10 ns | 44 ns | 100A | 20V | 100V | 375W Tc | N-Channel | 8050pF @ 25V | 10.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 185nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7629DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7629dnt1ge3-datasheets-1286.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 4.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 21.3A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 3.7W Ta 52W Tc | 35A | 20 mJ | P-Channel | 5790pF @ 10V | 4.6m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 177nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM70040E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum70040ege3-datasheets-6464.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 4V | 375W Tc | 480A | 0.004Ohm | 266 mJ | N-Channel | 5100pF @ 50V | 4m Ω @ 20A, 10V | 4V @ 250μA | 120A Tc | 120nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4164DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4164dyt1ge3-datasheets-2194.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 3.2MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 3W | 1 | 35 ns | 16ns | 16 ns | 48 ns | 30A | 20V | SILICON | SWITCHING | 30V | 30V | 2.5V | 3W Ta 6W Tc | N-Channel | 3545pF @ 15V | 3.2m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH14N60E-T1-GE3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh14n60et1ge3-datasheets-7048.pdf | 8-PowerTDFN | Lead Free | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 147W Tc | 0.255Ohm | 173 mJ | N-Channel | 1416pF @ 100V | 255m Ω @ 7A, 10V | 4V @ 250μA | 16A Tc | 82nC @ 10V | 10V | ±30V |
