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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Interface IC Type | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | On-State Resistance | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | High Side Driver | Topology | Synchronous Rectifier | Clock Sync | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Control Features | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Duty Cycle (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIP11205DLP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip11205dlpt1e3-datasheets-9854.pdf | PowerPAK® MLP44-16 | 16 | 16 | EAR99 | 1MHz | YES | QUAD | 12V | SIP11205 | BUFFER OR INVERTER BASED MOSFET DRIVER | Transistor Driver | Step-Up/Step-Down | 1 | Positive, Isolation Capable | YES | Forward Converter | Yes | No | Enable, Frequency Control, Soft Start | 10.5V~13.2V | 100kHz~500kHz | 47% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6943BDQ-T1-E3 | Vishay Siliconix | $2.95 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6943bdqt1e3-datasheets-4688.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | Unknown | 80mOhm | 8 | Tin | No | 800mW | SI6943 | Dual | 800mW | 2 | 8-TSSOP | 15 ns | 35ns | 35 ns | 35 ns | 2.3A | 8V | 12V | 800mW | 80mOhm | -12V | 2 P-Channel (Dual) | -450 mV | 80mOhm @ 2.5A, 4.5V | 800mV @ 250μA | 2.3A | 10nC @ 4.5V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | Lead Free | 500μA | 28 | 8 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | yes | Tin | No | 1 | 50μA | e3 | 450mW | QUAD | J BEND | 15V | DG406 | 28 | 16 | 450mW | 1 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 30mA | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.03A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB911DK-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib911dkt1e3-datasheets-4835.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 95.991485mg | 6 | No | 1.1W | SIB911 | 2 | Dual | PowerPAK® SC-75-6L Dual | 115pF | 12 ns | 45ns | 45 ns | 10 ns | 1.5A | 8V | 20V | 3.1W | 295mOhm | -20V | 2 P-Channel (Dual) | 115pF @ 10V | 295mOhm @ 1.5A, 4.5V | 1V @ 250μA | 2.6A | 4nC @ 8V | Standard | 295 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9421EDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg9421edvt1ge3-datasheets-1097.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 1 | 6-TSOP | 161MHz | 3.2Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 34pF 36pF | 36ns, 22ns | 19pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7224DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7224dnt1ge3-datasheets-5443.pdf | PowerPAK® 1212-8 Dual | 3.3mm | 1.04mm | 3.3mm | 6 | 15 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7224 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | S-XDSO-C6 | 20 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17.8W 23W | 6A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 570pF @ 15V | 35m Ω @ 6.5A, 10V | 2.2V @ 250μA | 14.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BCJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Through Hole | CMOS | 5.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg271bdye3-datasheets-5527.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | Lead Free | 7.5mA | 16 | 12 Weeks | 1.627801g | Unknown | 36V | 13V | 50Ohm | 16 | yes | No | 4 | 5.5mA | e3 | Matte Tin (Sn) | 470mW | 15V | DG271 | 16 | 1 | 470mW | Multiplexer or Switches | SPST | 65 ns | 65 ns | 22V | 15V | Dual | 7V | -15V | 4 | 50Ohm | 85 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7844DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7844dpt1e3-datasheets-4755.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7844 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6.4A | 2 N-Channel (Dual) | 22m Ω @ 10A, 10V | 2.4V @ 250μA | 6.4A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG467DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg467dvt1e3-datasheets-9273.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 15μA | 6 | 10 Weeks | 19.986414mg | 36V | 7V | 9Ohm | 6 | yes | Tin | No | 1 | 5μA | e3 | Non-Inverting | 570mW | GULL WING | 260 | 15V | 0.95mm | DG467 | 6 | 1 | 40 | 570mW | Multiplexer or Switches | 1 | SPST | 140 ns | 80 ns | 20V | Dual, Single | 4.5V | -15V | 7Ohm | 30mA | 2 | 9Ohm | 7Ohm | 61 dB | BREAK-BEFORE-MAKE | NC | 7V~36V ±4.5V~20V | 1:1 | SPST - NC | 1nA | 30pF 15pF | 140ns, 80ns | 21pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4505DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | 1.2W | 8-SO | 3.8A | 8V | 30V 8V | 1.2W | 42mOhm | N and P-Channel | 18mOhm @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg4157edlt1ge3-datasheets-5824.pdf | 6-XFDFN | 19 Weeks | 1 | 6-UDFN (1x1) | 152MHz | 1.2Ohm | 2:1 | 1.65V~5.5V | SPDT | 3nA | 32ns, 28ns | -5pC | 120mOhm (Max) | -41dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7962DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7962dpt1e3-datasheets-0110.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7962 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-C6 | 15ns | 15 ns | 55 ns | 11.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.1A | 0.017Ohm | 40V | 2 N-Channel (Dual) | 17m Ω @ 11.1A, 10V | 4.5V @ 250μA | 7.1A | 70nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG411 | 16 | 1 | 40 | Multiplexer or Switches | 4 | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3585DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3585dvt1e3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3585 | 6 | Dual | 30 | 2 | Other Transistors | 1.8A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 2A | 0.125Ohm | 20V | N and P-Channel | 600 mV | 125m Ω @ 2.4A, 4.5V | 600mV @ 250μA (Min) | 2A 1.5A | 3.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 16.5V | Lead Free | 10mA | 16 | 13 Weeks | 547.485991mg | 25V | 13V | 90Ohm | 16 | yes | No | 4 | 3.5mA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG201 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | SPST | 75 ns | 70 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | 50ns | 60ns | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4947ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4947adyt1e3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.2W | GULL WING | 260 | SI4947 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 8 ns | 9ns | 10 ns | 21 ns | -3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3A | 30V | 2 P-Channel (Dual) | 80m Ω @ 3.9A, 10V | 1V @ 250μA (Min) | 3A | 8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | 1μA | 8 | 14 Weeks | 540.001716mg | Unknown | 36V | 13V | 25Ohm | 8 | yes | No | 4 | 5μA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG419 | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 1 | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ702DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz702dtt1ge3-datasheets-2076.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | No | 4.5W | SIZ702 | 2 | 2 | 6-PowerPair™ | 790pF | 15 ns | 12ns | 10 ns | 20 ns | 14A | 20V | 30V | 27W 30W | 12mOhm | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12mOhm @ 13.8A, 10V | 2.5V @ 250μA | 16A | 21nC @ 10V | Logic Level Gate | 12 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DW-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.91mm | 2.34mm | 7.49mm | 15V | Lead Free | 500μA | 28 | 10 Weeks | 2.214806g | 44V | 7.5V | 100Ohm | 28 | yes | No | 1 | e3 | Matte Tin (Sn) | 450mW | GULL WING | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4388DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4388dyt1e3-datasheets-4448.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 3.5W | DUAL | GULL WING | 260 | SI4388 | 8 | 2 | 30 | 2 | FET General Purpose Power | Not Qualified | 11.3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 10.7A | 0.016Ohm | 30V | 2 N-Channel (Half Bridge) | 946pF @ 15V | 16m Ω @ 8A, 10V | 3V @ 250μA | 10.7A 11.3A | 27nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg308bdye3-datasheets-1370.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 22V | 1μA | 16 | 13 Weeks | 665.986997mg | 44V | 4V | 160Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG309 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | +-15/12V | SPST | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4565ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4565adyt1e3-datasheets-4456.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 506.605978mg | 8 | 3.1W | SI4565 | 2 | 8-SO | 625pF | 21 ns | 90ns | 56 ns | 33 ns | 5.6A | 16V | 40V | 3.1W | 54mOhm | 40V | N and P-Channel | 625pF @ 20V | 39mOhm @ 5A, 10V | 2.2V @ 250μA | 6.6A 5.6A | 22nC @ 10V | Standard | 39 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 12V | Lead Free | 500μA | 28 | 10 Weeks | 4.190003g | 36V | 7.5V | 100Ohm | 28 | yes | Tin | unknown | 1 | e3 | 625mW | NOT SPECIFIED | 15V | 2.54mm | DG406 | 28 | 16 | NOT SPECIFIED | 625mW | 1 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 148 ns | Dual, Single | 5V | -15V | 30mA | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4923DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4923dyt1ge3-datasheets-2270.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 15 ns | 10ns | 10 ns | 135 ns | 6.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.021Ohm | -30V | 2 P-Channel (Dual) | 21m Ω @ 8.3A, 10V | 3V @ 250μA | 70nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 8 | 14 Weeks | 540.001716mg | 36V | 13V | 40Ohm | 8 | yes | No | 1 | 1nA | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | DG418 | 8 | 1 | 30 | 400mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NC | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 2 | Other Transistors | Not Qualified | 2.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3.1A | 0.075Ohm | N and P-Channel | 75m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-TSSOP (0.173, 4.40mm Width) | 20 | 15 Weeks | No SVHC | 40V | 5V | 45Ohm | 20 | No | 4 | YES | DUAL | GULL WING | 15V | 0.635mm | 4 | Multiplexer or Switches | 1 | 22V | 4V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6933DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6933dqt1e3-datasheets-2333.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 45mOhm | 8 | EAR99 | e3 | MATTE TIN | 1W | GULL WING | 260 | 8 | Dual | 40 | 1W | 2 | Not Qualified | 13 ns | 10ns | 10 ns | 33 ns | -2.3A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 3.5A | -30V | 2 P-Channel (Dual) | 45m Ω @ 3.5A, 10V | 1V @ 250μA (Min) | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2536DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2536dqt1e3-datasheets-8379.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 3V | 1μA | 10 | 12 Weeks | 3.3V | 2.7V | 500mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2536 | 10 | 1 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 82 ns | 73 ns | Single | SEPARATE OUTPUT | 500mOhm | 69 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 78ns | 90ns | NO/NC | 2:1 | SPDT | 1nA | 145pF | 82ns, 73ns | 21pC | 50m Ω (Max) | -69dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6993DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6993dqt1e3-datasheets-4694.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | SI6993 | 8 | Dual | 830mW | 2 | Other Transistors | 13 ns | 14ns | 14 ns | 52 ns | -4.7A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6A | 0.031Ohm | 2 P-Channel (Dual) | 31m Ω @ 4.7A, 10V | 3V @ 250μA | 3.6A | 20nC @ 4.5V | Logic Level Gate |
