Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQD40081EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40081elge3-datasheets-4084.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 71W Tc | P-Channel | 9950pF @ 25V | 8.5mOhm @ 25A, 10V | 2.5V @ 250μA | 50A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS407ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs407enwt1ge3-datasheets-8401.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 30V | 62.5W Tc | P-Channel | 4572pF @ 20V | 10.8mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 18 ns | 120ns | 58 ns | 20 ns | -18A | 20V | SILICON | SWITCHING | 60V | 3.7W Ta 88W Tc | 72A | -60V | P-Channel | 1100pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR210TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 2.5W Ta 25W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQM10250E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm10250ege3-datasheets-6271.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 250V | 375W Tc | N-Channel | 4050pF @ 25V | 30mOhm @ 15A, 10V | 3.5V @ 250μA | 65A Tc | 75nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7421DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7421dnt1e3-datasheets-6759.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 13ns | 42 ns | 57 ns | -9.8A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 1.5W Ta | 6.4A | 30A | 0.025Ohm | -30V | P-Channel | 25m Ω @ 9.8A, 10V | 3V @ 250μA | 6.4A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQM200N04-1M1L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm200n041m1lge3-datasheets-6936.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 12 Weeks | TO-263-7 | 40V | 375W Tc | N-Channel | 20655pF @ 25V | 1.1mOhm @ 30A, 10V | 2.5V @ 250μA | 200A Tc | 413nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA811ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia811adjt1ge3-datasheets-0720.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 14 Weeks | 28.009329mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | 260 | 6 | 1 | 40 | 1.8W | 1 | Other Transistors | 15 ns | 45ns | 10 ns | 20 ns | 3.2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 1.8W Ta 6.5W Tc | 4.5A | -20V | P-Channel | 345pF @ 10V | 116m Ω @ 2.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 13nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI5448DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si5448dut1ge3-datasheets-3652.pdf | PowerPAK® ChipFET™ Single | 850μm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 3.1W | 150°C | 10 ns | 15 ns | 15.9A | 20V | 31W Tc | 40V | N-Channel | 1765pF @ 20V | 7.75m Ω @ 15A, 10V | 2.5V @ 250μA | 25A Tc | 20nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4842BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4842bdyt1ge3-datasheets-3156.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 125 ns | 190ns | 13 ns | 38 ns | 28A | 20V | SILICON | 30V | 30V | 3W Ta 6.25W Tc | 20A | 0.0042Ohm | N-Channel | 3650pF @ 15V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIRA00DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sira00dpt1ge3-datasheets-3704.pdf | PowerPAK® SO-8 | 5.99mm | 1.07mm | 5mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4mOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 6.25W | 1 | R-PDSO-C5 | 18 ns | 14ns | 11 ns | 67 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 6.25W Ta 104W Tc | 400A | 30V | N-Channel | 11700pF @ 15V | 1.1 V | 1m Ω @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 220nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
| SI7430DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7430dpt1ge3-datasheets-4795.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 45mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 7 ns | 20 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 5.2W Ta 64W Tc | 7.2A | 50A | 20 mJ | 150V | N-Channel | 1735pF @ 50V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 26A Tc | 43nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI8824EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8824edbt2e1-datasheets-8952.pdf | 4-XFBGA | 4 | 44 Weeks | Unknown | 60mOhm | 4 | EAR99 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 800mV | 500mW Ta | N-Channel | 400pF @ 10V | 75m Ω @ 1A, 4.5V | 800mV @ 250μA | 6nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8483DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8483dbt2e1-datasheets-9921.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 6 | 21 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 1 | Single | 2.77W | 1 | Other Transistors | 20 ns | 20ns | 20 ns | 80 ns | -16A | 10V | SILICON | SWITCHING | 12V | -400mV | 2.77W Ta 13W Tc | 25A | 0.035Ohm | P-Channel | 1840pF @ 6V | 26m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 65nC @ 10V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IRF740BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740bpbf-datasheets-1180.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 1 | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | SILICON | SWITCHING | 400V | 400V | 5V | 147W Tc | TO-220AB | 0.6Ohm | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9530GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi9530gpbf-datasheets-1713.pdf | -100V | -7.7A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 300mOhm | 3 | No | 1 | Single | 38W | 1 | TO-220-3 | 860pF | 2.5kV | 12 ns | 52ns | 39 ns | 31 ns | -7.7A | 20V | 100V | -4V | 42W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | -4 V | 300mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF730APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf730apbf-datasheets-2354.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 4.5V | 74W Tc | 550 ns | 1Ohm | 400V | N-Channel | 600pF @ 25V | 4.5 V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF9Z14SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | -60V | -6.7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 500mOhm | 3 | 1 | Single | 3.7W | 1 | D2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | 60V | 3.7W Ta 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFIZ34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfiz34gpbf-datasheets-3812.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 42W | 1 | 13 ns | 100ns | 52 ns | 29 ns | 20A | 20V | SILICON | SWITCHING | 60V | 60V | 4V | 42W Tc | TO-220AB | 80A | N-Channel | 1200pF @ 25V | 4 V | 50m Ω @ 12A, 10V | 4V @ 250μA | 20A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ44STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp10n40dge3-datasheets-4383.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | FET General Purpose Power | 12 ns | 18ns | 14 ns | 18 ns | 10A | 5V | SILICON | SWITCHING | 147W Tc | TO-220AB | 0.6Ohm | 400V | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI820GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfi820gpbf-datasheets-5120.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | yes | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 30W | 1 | 2kV | 8 ns | 8.6ns | 16 ns | 33 ns | 2.1A | 20V | SILICON | SWITCHING | 4V | 30W Tc | TO-220AB | 520 ns | 8.4A | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF740ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Lead Free | 2.387001g | Unknown | 550mOhm | 3 | 1 | Single | 3.1W | 1 | I2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF830PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf830pbf-datasheets-8583.pdf | 500V | 4.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | Tin | No | 1 | Single | 74W | 1 | TO-220AB | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 4V | 74W Tc | 640 ns | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 4 V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI8424CDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8424cdbt1e1-datasheets-9622.pdf | 4-UFBGA, WLCSP | Lead Free | 4 | 21 Weeks | No SVHC | 20mOhm | 4 | EAR99 | Tin | No | BOTTOM | BALL | 1 | Single | 2.7W | 1 | FET General Purpose Power | 30 ns | 40ns | 40 ns | 150 ns | 10A | 5V | SILICON | SWITCHING | 8V | 8V | 800mV | 1.1W Ta 2.7W Tc | N-Channel | 2340pF @ 4V | 20m Ω @ 2A, 4.5V | 800mV @ 250μA | 40nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||
| SIR846ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir846adpt1ge3-datasheets-0740.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 9.5MOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 14 ns | 28 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 5.4W Ta 83W Tc | 200A | 100V | N-Channel | 2350pF @ 50V | 7.8m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 66nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIRA99DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira99dpt1ge3-datasheets-1405.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 6.35W Ta 104W Tc | P-Channel | 10955pF @ 15V | 1.7mOhm @ 20A, 10V | 2.5V @ 250μA | 47.9A Ta 195A Tc | 260nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP052N60EF-GE3 | Vishay Siliconix | $5.94 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp052n60efge3-datasheets-1984.pdf | TO-220-3 | TO-220AB | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irll014trpbf-datasheets-2710.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 3 | 8 Weeks | 250.212891mg | Unknown | 200mOhm | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 2A | 55V | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | R-PDSO-G3 | 9.3 ns | 110ns | 26 ns | 17 ns | 2.7A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2W Ta 3.1W Tc | 60V | N-Channel | 400pF @ 25V | 1 V | 200m Ω @ 1.6A, 5V | 2V @ 250μA | 2.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| SQJ464EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sqj464ept1ge3-datasheets-3981.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 45W Tc | 32A | 130A | 0.017Ohm | 31 mJ | N-Channel | 2086pF @ 30V | 17m Ω @ 7.1A, 10V | 2.5V @ 250μA | 32A Tc | 44nC @ 10V | 4.5V 10V | ±20V |
