Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Current - Supply | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Max Output Voltage | Min Input Voltage | Min Output Voltage | Differential Output | Input Characteristics | Interface IC Type | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Threshold Voltage | Power - Max | Power Dissipation-Max | Output Current Flow Direction | Driver Number of Bits | Topology | Voltage - Output 2 | Current - Output 2 | Protocol | Number of Transceivers | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Number of Receive Buffers | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Nominal Vgs | Number of Drivers/Receivers | Duplex | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIP11204DLP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 15.5mA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip11203dlpt1e3-datasheets-6340.pdf | PowerPAK® MLP44-16 | 16 | 16 | EAR99 | Secondary-Side Controller, Synchronous Rectifier | 5.5V~13V | QUAD | NO LEAD | SIP11204 | 16 | Not Qualified | HALF BRIDGE BASED PERIPHERAL DRIVER | 1 | SOURCE SINK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3473DV-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3473dvt1e3-datasheets-8163.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 19.986414mg | 6 | EAR99 | ULTRA LOW RESISTANCE | No | DUAL | GULL WING | 1 | Single | 1 | 25 ns | 50ns | 110 ns | 130 ns | -5.9A | 8V | SILICON | SWITCHING | 12V | 1.1W Ta | 0.023Ohm | P-Channel | 23m Ω @ 7.9A, 4.5V | 1V @ 250μA | 5.9A Ta | 33nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9241AEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Transceiver | Surface Mount | Surface Mount | -40°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | BCDMOS | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9241aeyt1e3-datasheets-6015.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 9V | Lead Free | 8 | 540.001716mg | Unknown | 8 | Serial | EAR99 | No | 1 | e3 | MATTE TIN | 4.5V~5.5V | DUAL | GULL WING | 260 | 5V | SI9241 | 8 | 40 | NO | SCHMITT TRIGGER | 1 | ISO 9141 | 3 | 1 | 1/1 | Half | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4426DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4426dyt1e3-datasheets-7666.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 40 ns | 40ns | 40 ns | 90 ns | 6.5A | 12V | SILICON | 1.5W Ta | 0.025Ohm | 20V | N-Channel | 25m Ω @ 8.5A, 4.5V | 1.4V @ 250μA | 6.5A Ta | 50nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC414CD-T1-GE3 | Vishay Siliconix | $2.65 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 130μA | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic424cdt1ge3-datasheets-8892.pdf | 28-WFQFN Exposed Pad | 4mm | 28V | Lead Free | 44 | 15 Weeks | No SVHC | 28 | EAR99 | 28V | 3V~28V | QUAD | SIC414 | 44 | SWITCHING REGULATOR | S-XQCC-N44 | 5A | 5.5V | 3V | 750mV | 5.5V | 6A | 2 | 5.5V | 6A | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 5V | 200mA | 200kHz~1MHz | No | 0.75V~5.5V 6A | 5V 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4840DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4840dyt1e3-datasheets-8414.pdf | 8-SOIC (0.154, 3.90mm Width) | 186.993455mg | 8 | 1 | Single | 8-SO | 10A | 20V | 40V | 1.56W Ta | 9mOhm | 40V | N-Channel | 3 V | 9mOhm @ 14A, 10V | 3V @ 250μA | 10A Ta | 28nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG542DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 665.986997mg | 18V | 10V | 60Ohm | 16 | yes | No | 4 | e3 | RGB, T-Switch Configuration | Matte Tin (Sn) | Video | 640mW | GULL WING | 260 | 15V | 1.27mm | DG542 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 15-3V | 100 ns | 60 ns | 15V | Dual, Single | 10V | -3V | 4 | 60Ohm | 75 dB | 2Ohm | BREAK-BEFORE-MAKE | 85ns | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4346DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4346dyt1e3-datasheets-9282.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.31W | 1 | 9 ns | 11ns | 7 ns | 40 ns | 5.9A | 12V | SILICON | SWITCHING | 2V | 1.31W Ta | 0.023Ohm | 30V | N-Channel | 23m Ω @ 8A, 10V | 2V @ 250μA | 5.9A Ta | 10nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG541DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | 3.5mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 547.485991mg | 18V | 10V | 60Ohm | 16 | no | No | 4 | e0 | RGB, T-Switch Configuration | TIN LEAD | Video | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | 15-3V | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | 4 | 60Ohm | 60 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4486EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4486eyt1e3-datasheets-8380.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 100V | 1.8W Ta | N-Channel | 25mOhm @ 7.9A, 10V | 2V @ 250μA (Min) | 5.4A Ta | 44nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ260EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj260ept1ge3-datasheets-0863.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 60V | 27W Tc 48W Tc | 15.5mOhm | 2 N-Channel (Dual) | 1100pF @ 25V 2500pF @ 25V | 19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V | 2.5V @ 250μA | 20A Tc 54A Tc | 20nC @ 10V, 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5853CDC-T1-E3 | Vishay Siliconix | $0.08 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5853cdct1e3-datasheets-6493.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 104mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | Other Transistors | 5 ns | 15ns | 15 ns | 20 ns | -4A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.5W Ta 3.1W Tc | 4A | P-Channel | 350pF @ 10V | 104m Ω @ 2.5A, 4.5V | 1V @ 250μA | 4A Tc | 11nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4961EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4961eyt1ge3-datasheets-1499.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 2 | 8-SO | 11 ns | 13ns | 8 ns | 36 ns | 4.4A | 20V | 60V | 3.3W | 2 P-Channel (Dual) | 1140pF @ 25V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 4.4A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5485DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5485dut1e3-datasheets-8566.pdf | PowerPAK® ChipFET™ Single | 25mOhm | 1 | Single | PowerPAK® ChipFet Single | 1.1nF | 7 ns | 15ns | 80 ns | 50 ns | -12A | 12V | 20V | 3.1W Ta 31W Tc | 25mOhm | P-Channel | 1100pF @ 10V | 25mOhm @ 5.9A, 4.5V | 1.5V @ 250μA | 12A Tc | 42nC @ 8V | 25 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 19.2mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | -8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 8A | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4831BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4831bdyt1ge3-datasheets-6455.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 8 | 1 | 2W | 1 | 8-SO | 625pF | 8 ns | 8ns | 7 ns | 24 ns | -6.6A | 20V | 30V | 2W Ta 3.3W Tc | 42mOhm | -30V | P-Channel | 625pF @ 15V | 42mOhm @ 5A, 10V | 3V @ 250μA | 6.6A Tc | 26nC @ 10V | Schottky Diode (Isolated) | 42 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1026X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1026xt1ge3-datasheets-4252.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 3Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1026 | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | 15 ns | 20 ns | 500mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | 2 N-Channel (Dual) | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7405BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7405bdnt1ge3-datasheets-0240.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 13mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | Other Transistors | S-XDSO-C5 | 22 ns | 60ns | 45 ns | 80 ns | 13.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.6W Ta 33W Tc | 40A | P-Channel | 3500pF @ 6V | 13m Ω @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 115nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 16mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 3.1W | 8A | 30V | 2 N-Channel (Dual) | 2070pF @ 15V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7425DN-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7425dnt1ge3-datasheets-6629.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 16mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 55ns | 100 ns | 130 ns | 8.3A | 8V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 25A | 12V | P-Channel | 16m Ω @ 12.6A, 4.5V | 1V @ 300μA | 8.3A Ta | 39nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4554DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4554dyt1ge3-datasheets-6501.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | 14 Weeks | 506.605978mg | No SVHC | 8 | Tin | No | 3.2W | 2 | 2W | 2 | 150°C | 8-SO | 690pF | 42 ns | 40ns | 18 ns | 40 ns | 8A | 20V | 40V | 1V | 3.1W 3.2W | 21mOhm | 40V | N and P-Channel | 690pF @ 20V | 24mOhm @ 6.8A, 10V | 2.2V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4829DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 45ns | 10 ns | 15 ns | 2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ914EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj914ept1ge3-datasheets-7918.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 27W Tc | 9.8mOhm | 2 N-Channel (Dual) | 1110pF @ 15V | 12mOhm @ 4.5A, 10V | 2.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1417EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1417edht1e3-datasheets-7948.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | Other Transistors | 600 ns | 1.4μs | 4.9 μs | 4.9 μs | 2.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1W Ta | 0.085Ohm | P-Channel | 85m Ω @ 3.3A, 4.5V | 450mV @ 250μA (Min) | 2.7A Ta | 8nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 10A | 2 N-Channel (Dual) | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4470EY-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4470eyt1e3-datasheets-8331.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | No | 1 | Single | 1.85W | 1 | 8-SO | 16 ns | 12ns | 30 ns | 50 ns | 9A | 20V | 60V | 2V | 1.85W Ta | 11mOhm | 60V | N-Channel | 2 V | 11mOhm @ 12A, 10V | 2V @ 250μA (Min) | 9A Ta | 70nC @ 10V | 11 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ998DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/vishaysiliconix-siz998dtt1ge3-datasheets-0405.pdf | 8-PowerWDFN | 14 Weeks | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 20V | 30V | 20.2W 32.9W | 2 N-Channel (Dual), Schottky | 930pF @ 15V 2620pF @ 15V | 6.7m Ω @ 15A, 10V, 2.8m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 19.8nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7462dpt1e3-datasheets-6195.pdf | PowerPAK® SO-8 | Lead Free | 5 | 130MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.9W | DUAL | C BEND | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 20 ns | 40 ns | 2.6A | 20V | DRAIN | SWITCHING | 12A | 1.8 mJ | 200V | N-Channel | 130m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A Ta | 30nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1912EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1912eht1ge3-datasheets-1230.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.8A | 0.28Ohm | 12 pF | 2 N-Channel (Dual) | 75pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.15nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1304BDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1304bdlt1e3-datasheets-7824.pdf | SC-70, SOT-323 | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 340mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 10 ns | 5 ns | 850mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 340mW Ta 370mW Tc | 0.85A | 0.27Ohm | N-Channel | 100pF @ 15V | 270m Ω @ 900mA, 4.5V | 1.3V @ 250μA | 900mA Tc | 2.7nC @ 4.5V | 2.5V 4.5V | ±12V |
