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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4940DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4940dyt1e3-datasheets-2267.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | 36mOhm | 8 | 1.1W | 2 | Dual | 1.1W | 2 | 8-SO | 7 ns | 12ns | 12 ns | 15 ns | 4.2A | 20V | 40V | 1.1W | 36mOhm | 40V | 2 N-Channel (Dual) | 36mOhm @ 5.7A, 10V | 1V @ 250μA (Min) | 4.2A | 14nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2034EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg2034edqt1ge3-datasheets-5382.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 19 Weeks | unknown | SINGLE-ENDED MULTIPLEXER | 1 | 166MHz | 2.5Ohm | 4:1 | 1.8V~5.5V | SP4T | 2nA | 7pF - | 25ns, 20ns | -2.6pC | 20m Ω | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5504dct1e3-datasheets-4592.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | C BEND | 260 | SI5504 | 8 | 30 | 2 | Other Transistors | 2.1A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.9A | N and P-Channel | 85m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 2.9A 2.1A | 7.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2737DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2739dnt1e4-datasheets-5106.pdf | 8-UFQFN | 1μA | 8 | 12 Weeks | 4.3V | 2.3V | 8Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2737 | 8 | 1 | 40 | Multiplexer or Switches | 3V | 1 | Not Qualified | 720MHz | SPST | 60 ns | 50 ns | Single | SEPARATE OUTPUT | 8Ohm | 28 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 2:1 | 2.3V~4.3V | SPDT | 10nA | 4.4pF 3.8pF | 60ns, 50ns | 10.4pC | 100m Ω | -109dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4940DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4940dyt1e3-datasheets-2267.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | 8 | 1.1W | 2 | Dual | 8-SO | 4.2A | 20V | 40V | 1.1W | 36mOhm | 2 N-Channel (Dual) | 36mOhm @ 5.7A, 10V | 1V @ 250μA (Min) | 4.2A | 14nC @ 10V | Logic Level Gate | 36 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3537DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3537 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6969dqt1e3-datasheets-2341.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 1.1W | GULL WING | 260 | SI6969 | 8 | 2 | Dual | 40 | 1.1W | 2 | Not Qualified | 25 ns | 35ns | 35 ns | 80 ns | 4.6A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.034Ohm | 2 P-Channel (Dual) | 34m Ω @ 4.6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2750DN1-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2750dn1t1ge4-datasheets-8523.pdf | 19 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7218DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7218dnt1e3-datasheets-0762.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 6 | 15 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7218 | 8 | Dual | 40 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 15 ns | 12ns | 10 ns | 10 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 35A | 5 mJ | 30V | 2 N-Channel (Dual) | 700pF @ 15V | 25m Ω @ 8A, 10V | 3V @ 250μA | 24A | 17nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg213dye3-datasheets-4404.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 12 Weeks | 1.627801g | 40V | 3V | 110Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG213 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4946EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sq4946eyt1e3-datasheets-2453.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | 1.7W | GULL WING | 260 | 8 | 2 | 40 | 1.7W | 2 | FET General Purpose Power | Not Qualified | 13 ns | 11ns | 11 ns | 36 ns | 4.5A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4W | 30A | 0.055Ohm | 60V | 2 N-Channel (Dual) | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG412 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8472DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si8472dbt2e1-datasheets-2941.pdf | 4-UFBGA | Lead Free | 4 | 33 Weeks | 44MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 1 | FET General Purpose Powers | S-PBGA-B4 | 4.5A | 8V | SILICON | SWITCHING | 780mW Ta | 20V | N-Channel | 630pF @ 10V | 44m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 18nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 10μA | 16 | 13 Weeks | 547.485991mg | Unknown | 25V | 4.5V | 85Ohm | 16 | yes | No | 4 | 50μA | e3 | MATTE TIN | 640mW | GULL WING | 260 | 15V | 1.27mm | DG212 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 19 Weeks | 1.437803g | Unknown | 39mOhm | 3 | No | 1 | Single | 750mW | 1 | SOT-23-3 (TO-236) | 1.02nF | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | 20V | -1V | 750mW Ta | 39mOhm | -20V | P-Channel | 1020pF @ 10V | -1 V | 39mOhm @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 39 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1μA | 16 | 13 Weeks | 665.986997mg | 44V | 13V | 80Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG413 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5999EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5999edut1ge3-datasheets-5713.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 59mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 10.4W | C BEND | 260 | SI5999 | 8 | 2 | Dual | 30 | 2.3W | 2 | Other Transistors | Not Qualified | R-PDSO-C6 | 17 ns | 21ns | 13 ns | 26 ns | 5A | 12V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | -20V | 2 P-Channel (Dual) | 496pF @ 10V | -600 mV | 59m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG405 | 16 | 2 | DPST | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 1.3W | 4 | 14-DIP | 400mA | 20V | SILICON | 90V | 90V | METAL-OXIDE SEMICONDUCTOR | 2A | 3.5Ohm | 10 pF | 4 N-Channel | 60pF @ 25V | 10ns | 10ns | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9461DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9461dvt1e3-datasheets-6647.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 1μA | 6 | 19.986414mg | Unknown | 12V | 2.7V | 60Ohm | 6 | yes | 1 | 1μA | e3 | Matte Tin (Sn) | 400mW | DUAL | GULL WING | 260 | 3V | DG9461 | 6 | 1 | 40 | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 60Ohm | 50Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA88BDP-T1-GE3 | Vishay Siliconix | $0.43 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira88bdpt1ge3-datasheets-6913.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 680pF @ 15V | 6.83mOhm @ 10A, 10V | 2.4V @ 250μA | 19A Ta 40A Tc | 19nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 80μA | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 9V | 100μA | 28 | 8 Weeks | 4.190003g | Unknown | 34V | 5V | 100Ohm | 28 | no | No | 1 | 50μA | e0 | Tin/Lead (Sn/Pb) | 625mW | 28 | 8 | DIFFERENTIAL MULTIPLEXER | 625mW | Multiplexer or Switches | 2 | 600 ns | 300 ns | 20V | 9V | 300 ns | Dual, Single | 5V | 30mA | 16 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS423ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs423enwt1ge3-datasheets-7595.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 30V | 62.5W Tc | P-Channel | 1975pF @ 15V | 21mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 36V | Lead Free | 500μA | 16 | 1.627801g | 44V | 13V | 100Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 450mW | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 450mW | Multiplexer or Switches | 1 | DPST | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA413ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sia413adjt1ge3-datasheets-8276.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 14 Weeks | Unknown | 6 | yes | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 10 ns | 12ns | 40 ms | 70 ns | -12A | 8V | 12V | 19W Tc | P-Channel | 1800pF @ 10V | 29m Ω @ 6.7A, 4.5V | 1V @ 250μA | 12A Tc | 57nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqs484enwt1ge3-datasheets-9352.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 12 Weeks | unknown | YES | DUAL | FLAT | 1 | 62.5W | 1 | 175°C | S-PDSO-F5 | 11 ns | 25 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 64A | 40V | N-Channel | 1800pF @ 25V | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 16 | 30Ohm | 16 | no | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 2 | Not Qualified | 18V | 10V | 4 | SEPARATE OUTPUT | 30Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4825DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4825ddyt1ge3-datasheets-0870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | No SVHC | 12.5MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.7W | 1 | 48 ns | 92ns | 19 ns | 34 ns | 10.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.4V | 2.7W Ta 5W Tc | -30V | P-Channel | 2550pF @ 15V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 14.9A Tc | 86nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG183AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 14 | 10Ohm | 16 | no | Yes | unknown | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 2 | Not Qualified | 18V | 10V | 4 | SEPARATE OUTPUT | 10Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 10nA | 21pF 17pF | 400ns, 200ns |
