Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SIR492DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sir492dpt1ge3-datasheets-8736.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 4.7MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 27 ns | 125ns | 12 ns | 53 ns | 40A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 1V | 4.2W Ta 36W Tc | 27A | 60A | N-Channel | 3720pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 40A Tc | 110nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||
V961-0007-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIRC04DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sirc04dpt1ge3-datasheets-9148.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | 1 | 5W | 150°C | 12 ns | 25 ns | 33.6A | 50W Tc | 30V | N-Channel | 2850pF @ 15V | 2.45m Ω @ 15A, 10V | 2.1V @ 250μA | 60A Tc | 56nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 11 Weeks | 1.437803g | Unknown | 3 | 1 | Single | 110W | 1 | D-Pak | 490pF | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | 500V | 4.5V | 110W Tc | 1.7Ohm | 500V | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SI7880ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7880adpt1e3-datasheets-0004.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 14ns | 30 ns | 96 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta 83W Tc | 70A | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
IRFI634GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi634g-datasheets-8518.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 5.6A | 20V | 250V | 2V | 35W Tc | 450mOhm | 250V | N-Channel | 770pF @ 25V | 450mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
SIHH21N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh21n65et1ge3-datasheets-1492.pdf | 8-PowerTDFN | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 20.3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 156W Tc | 53A | 0.17Ohm | 353 mJ | N-Channel | 2404pF @ 100V | 170m Ω @ 11A, 10V | 4V @ 250μA | 20.3A Tc | 99nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
SQM40020E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40020ege3-datasheets-4030.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | N-Channel | 8000F @ 25V | 2.33mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQD70140EL_GE3 | Vishay Siliconix | $0.96 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd70140elge3-datasheets-3052.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 100V | 71W Tc | N-Channel | 2100pF @ 25V | 15mOhm @ 30A, 10V | 2.5V @ 250μA | 30A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2304BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2304bdst1ge3-datasheets-5031.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 70mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 7.5 ns | 12.5ns | 12.5 ns | 19 ns | 3.2A | 20V | SILICON | SWITCHING | 1.5V | 750mW Ta | 2.6A | 30V | N-Channel | 225pF @ 15V | 1.5 V | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 2.6A Ta | 4nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
SI7804DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si7804dnt1e3-datasheets-3704.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 14 Weeks | 18.5mOhm | 8 | No | 1 | Single | PowerPAK® 1212-8 | 8 ns | 12ns | 12 ns | 32 ns | 10A | 20V | 30V | 1.5W Ta | 18.5mOhm | N-Channel | 18.5mOhm @ 10A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 18.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SQS405EN-T1_GE3 | Vishay Siliconix | $0.32 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs405enwt1ge3-datasheets-6349.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 12V | 39W Tc | P-Channel | 2650pF @ 6V | 20mOhm @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 75nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7434DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7434dpt1e3-datasheets-5766.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 155MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 23ns | 23 ns | 47 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 1.9W Ta | 2.3A | 40A | N-Channel | 155m Ω @ 3.8A, 10V | 4V @ 250μA | 2.3A Ta | 50nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
SISA01DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa01dnt1ge3-datasheets-0170.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | 1 | 3.7W | 150°C | PowerPAK® 1212-8 | 15 ns | 39 ns | -22.4A | 30V | 3.7W Ta 52W Tc | 4.1mOhm | -30V | P-Channel | 3490pF @ 15V | 4.9mOhm @ 15A, 10V | 2.2V @ 250μA | 22.4A Ta 60A Tc | 84nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHJ240N60E-T1-GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj240n60et1ge3-datasheets-5900.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 600V | 89W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7386DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7386dpt1ge3-datasheets-7400.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 12 ns | 9ns | 10 ns | 35 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.8W Ta | 50A | 32 mJ | 30V | N-Channel | 7m Ω @ 19A, 10V | 2.5V @ 250μA | 12A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
SI7174DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7174dpt1ge3-datasheets-6883.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 11ns | 12 ns | 38 ns | 60A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4.5V | 6.25W Ta 104W Tc | N-Channel | 2770pF @ 40V | 4.5 V | 7m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
SI1441EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1441edht1ge3-datasheets-0412.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.6W | 1 | Other Transistors | 4A | 10V | SILICON | SWITCHING | 20V | 2.8W Tc | 4A | -20V | P-Channel | -400 mV | 41m Ω @ 5A, 4.5V | 1V @ 250μA | 4A Tc | 33nC @ 8V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||
SI8457DB-T1-E1 | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8457dbt1e1-datasheets-2199.pdf | 4-UFBGA | 21 Weeks | Unknown | 15mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | -10.2A | 12V | -900mV | 1.1W Ta 2.7W Tc | P-Channel | 2900pF @ 6V | 19m Ω @ 3A, 4.5V | 700mV @ 250μA | 93nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9024TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 280mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 42W Tc | P-Channel | 570pF @ 25V | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
SUD35N10-26P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sud35n1026pe3-datasheets-3743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 14 Weeks | 1.437803g | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 8.3W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 10ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 100V | 8.3W Ta 83W Tc | 35A | 40A | 0.026Ohm | 55 mJ | N-Channel | 2000pF @ 12V | 26m Ω @ 12A, 10V | 4.4V @ 250μA | 35A Tc | 47nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||
SIR826ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir826adpt1ge3-datasheets-4671.pdf&product=vishaysiliconix-sir826adpt1ge3-6841328 | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | DUAL | C BEND | 8 | 1 | Single | 6.25W | 1 | 150°C | R-PDSO-C5 | 9 ns | 15ns | 8 ns | 34 ns | 23.8A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 6.25W Ta 104W Tc | 60A | 80V | N-Channel | 2800pF @ 40V | 5.5m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
SQM40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40p1040lge3-datasheets-8725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | No | 150W | 1 | TO-263 (D2Pak) | 10 ns | 10ns | 20 ns | 63 ns | 40A | 20V | 100V | 150W Tc | P-Channel | 5295pF @ 25V | 40mOhm @ 17A, 10V | 2.5V @ 250μA | 40A Tc | 134nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
SI4178DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4178dyt1ge3-datasheets-0934.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 8 | 1 | Single | 2.4W | 1 | 20 ns | 10 ns | 12 ns | 12A | 25V | SILICON | SWITCHING | 30V | 30V | 2.8V | 2.4W Ta 5W Tc | N-Channel | 405pF @ 15V | 1.4 V | 21m Ω @ 8.4A, 10V | 2.8V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||
SQP50P03-07_GE3 | Vishay Siliconix | $2.28 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp50p0307ge3-datasheets-1693.pdf | TO-220-3 | 12 Weeks | TO-220AB | 30V | 150W Tc | P-Channel | 5380pF @ 25V | 7mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL640SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 180mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 2V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
IRF530SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.946308g | Unknown | 160mOhm | 3 | Tin | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 4V | 3.7W Ta 88W Tc | 160mOhm | N-Channel | 670pF @ 25V | 4 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRL630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irl630pbf-datasheets-3769.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 2V | 74W Tc | 350 ns | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 2 V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
SUP70060E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sup70060ege3-datasheets-4309.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 131A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 200W Tc | TO-220AB | 240A | 0.0064Ohm | 125 mJ | N-Channel | 3330pF @ 50V | 5.8m Ω @ 30A, 10V | 4V @ 250μA | 131A Tc | 81nC @ 10V | 7.5V 10V | ±20V |
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