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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Voltage - Input (Max) | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Data Rate | Max Output Current | Max Output Voltage | Min Output Voltage | Interface IC Type | Output Voltage | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | Input Voltage-Nom | Built-in Protections | Output Current Flow Direction | Topology | Synchronous Rectifier | Clock Sync | Number of Inputs | Output | Efficiency | Control Mode | Control Technique | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Control Features | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Duty Cycle (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIC413CB-T1-E3 | Vishay Siliconix | $1.86 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -25°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 10mA | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic413cbt1e3-datasheets-6350.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 12V | Lead Free | 8 | 506.605978mg | No SVHC | 4.75V | 8 | EAR99 | No | 26V | DUAL | GULL WING | SIC413 | SWITCHING REGULATOR | 4A | 13.2V | 600mV | 13.2V | Adjustable | Step-Down | 1 | Positive | 12V | Buck | Yes | 93 % | VOLTAGE-MODE | PULSE WIDTH MODULATION | 0.6V | 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5935DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5935dct1e3-datasheets-4636.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | Unknown | 8 | No | 1.1W | SI5935 | 2 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 18 ns | 32ns | 32 ns | 42 ns | -4.1A | 8V | 20V | 1V | 1.1W | 86mOhm | -20V | 2 P-Channel (Dual) | 86mOhm @ 3A, 4.5V | 1V @ 250μA | 3A | 8.5nC @ 4.5V | Logic Level Gate | 86 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP11206DLP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip11206dlpt1e3-datasheets-9851.pdf | PowerPAK® MLP44-16 | 4mm | 4mm | 16 | 28 | yes | EAR99 | 1MHz | e3 | Matte Tin (Sn) | QUAD | 260 | 12V | 0.65mm | SIP11206 | 40 | HALF BRIDGE BASED PERIPHERAL DRIVER | Transistor Driver | Step-Up/Step-Down | 1 | Positive, Isolation Capable | THERMAL; UNDER VOLTAGE | SOURCE SINK | Forward Converter | Yes | No | Enable, Frequency Control, Soft Start | 10.5V~13.2V | 200kHz~1MHz | 47% | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6928DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6928dqt1e3-datasheets-4686.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 35MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6928 | 8 | Dual | 40 | 1W | 2 | 12 ns | 9ns | 20 ns | 25 ns | 4A | 20V | SILICON | 30V | METAL-OXIDE SEMICONDUCTOR | 4A | 30V | 2 N-Channel (Dual) | 35m Ω @ 4A, 10V | 1V @ 250μA | 14nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG455EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg455eqt1e3-datasheets-7819.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 100μA | 16 | 15 Weeks | 172.98879mg | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | Tin | No | 4 | e3 | Non-Inverting | 450mW | GULL WING | 260 | 5V | 0.65mm | DG455 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 100mA | 4 | 5.3Ohm | 60 dB | 0.12Ohm | BREAK-BEFORE-MAKE | 112ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7945DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7945dpt1e3-datasheets-4778.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 20mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7945 | 8 | Dual | 40 | 1.4W | 2 | Other Transistors | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 130 ns | -10.9A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 P-Channel (Dual) | -3 V | 20m Ω @ 10.9A, 10V | 3V @ 250μA | 7A | 74nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDW-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 200μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-SOIC (0.295, 7.50mm Width) | 12.8mm | 2.34mm | 7.49mm | Lead Free | 1μA | 20 | 12 Weeks | 800.987426mg | 40V | 5V | 75Ohm | 20 | yes | unknown | 4 | e3 | MATTE TIN | 800mW | GULL WING | 260 | 15V | DG333 | 20 | 4 | 40 | 800mW | Multiplexer or Switches | 1 | Not Qualified | 175 ns | 145 ns | 22V | Dual, Single | 4V | -15V | 8 | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7948DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7948dpt1ge3-datasheets-5429.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1.4W | SI7948 | 2 | Dual | 1.4W | 2 | PowerPAK® SO-8 Dual | 7 ns | 8ns | 8 ns | 15 ns | 4.6A | 20V | 60V | 1.4W | 75mOhm | 60V | 2 N-Channel (Dual) | 75mOhm @ 4.6A, 10V | 3V @ 250μA | 3A | 20nC @ 10V | Logic Level Gate | 75 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2003 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500μA | 16 | 13 Weeks | 665.986997mg | Unknown | 36V | 5V | 40Ohm | 16 | yes | No | 2 | 10μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG409 | 16 | 4 | 30 | 600mW | 2 | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 8 | 100Ohm | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 5V~36V ±5V~20V | 4:1 | SP4T | 500pA | 14pF 25pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6562dqt1e3-datasheets-4653.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6562 | 8 | Dual | 40 | 1W | 2 | Other Transistors | 30ns | 30 ns | 57 ns | 3.5A | 12V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.0045A | 0.03Ohm | 20V | N and P-Channel | 30m Ω @ 4.5A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2730DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2730dnt1ge4-datasheets-1104.pdf | 10-UFQFN | 3V | 10 | 10 Weeks | 4.3V | 2.6V | 8Ohm | 10 | yes | No | 1 | 2μA | e4 | NICKEL PALLADIUM GOLD | 208mW | QUAD | 260 | 3V | DG2730 | 10 | 2 | 40 | 208mW | Multiplexer or Switches | 3V | 1 | 900MHz | 480 Mbps | 30 ns | 25 ns | Single | 4 | 2 | 8Ohm | 30 dB | 0.8Ohm | BREAK-BEFORE-MAKE | 2:2 | 2.6V~4.3V | DPDT | 100nA | 2.2pF | 30ns, 25ns | 0.5pC | 800m Ω | -45dB @ 240MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4505DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | 8 | 40 | 2 | Other Transistors | Not Qualified | 3.8A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 8V | METAL-OXIDE SEMICONDUCTOR | 6A | 8V | N and P-Channel | 18m Ω @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2001EDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishay-dg2012edlt1ge3-datasheets-2547.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | 1 | 6-TSOP | 1.6Ohm | 2:1 | 1.8V~5.5V | SPDT | 32ns, 26ns | 8pC | -63dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8900EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8900edbt2e1-datasheets-0037.pdf | 10-UFBGA, CSPBGA | 10 | 13 Weeks | 40mOhm | 10 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8900 | 10 | Dual | 40 | 1W | 2 | FET General Purpose Power | Not Qualified | 4.5μs | 4.5 μs | 55 μs | 7A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 5.4A | 24mOhm | 20V | 2 N-Channel (Dual) Common Drain | 1V @ 1.1mA | 5.4A | Logic Level Gate | 24 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | 1mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-VQFN Exposed Pad | 1μA | 16 | 12 Weeks | 57.09594mg | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 850mW | QUAD | NO LEAD | 260 | 15V | 0.65mm | DG444 | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1553DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1553dlt1e3-datasheets-4314.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No SVHC | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1553 | 6 | Dual | 30 | 270mW | 2 | Other Transistors | 410mA | 12V | SILICON | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.385Ohm | N and P-Channel | 385m Ω @ 660mA, 4.5V | 600mV @ 250μA (Min) | 660mA 410mA | 1.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADW-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 200μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-SOIC (0.295, 7.50mm Width) | 12.8mm | 2.34mm | 7.49mm | Lead Free | 200μA | 20 | 12 Weeks | 537.308512mg | 40V | 5V | 75Ohm | 20 | No | 4 | 200μA | 800mW | GULL WING | 15V | DG333 | 4 | 800mW | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | -15V | 8 | 45Ohm | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 0.03A | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4914BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | Dual | 2 | 8-SO | 10 ns | 9ns | 8 ns | 16 ns | 8A | 20V | 30V | 2.7W 3.1W | 15.5mOhm | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 10μA | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 160Ohm | 16 | No | 50μA | 470mW | DG212 | 4 | 470mW | 4 | 16-PDIP | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 50Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7222DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7222dnt1e3-datasheets-4699.pdf | PowerPAK® 1212-8 Dual | 6 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7222 | 8 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-PDSO-C6 | 12ns | 6 ns | 21 ns | 5A | 12V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 17.8W | 5.7A | 2 N-Channel (Dual) | 700pF @ 20V | 42m Ω @ 5.7A, 10V | 1.6V @ 250μA | 6A | 29nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 36V | Lead Free | 500μA | 16 | 15 Weeks | 172.98879mg | 44V | 13V | 90Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 0.65mm | DG409 | 16 | 4 | 30 | 600mW | 2 | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 8 | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 5V~36V ±5V~20V | 4:1 | SP4T | 500pA | 14pF 25pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1557DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1557dht1e3-datasheets-2214.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | No | 470mW | Dual | 470mW | 2 | Other Transistors | 30ns | 10 ns | 15 ns | 1.2A | 8V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 235m Ω @ 1.2A, 4.5V | 1V @ 100μA | 1.2A 770mA | 1.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LEDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 26Ohm | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 4 | R-PDSO-G16 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3529DV-T1-GE3 | Vishay Siliconix | $2.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3529dvt1e3-datasheets-2169.pdf | SOT-23-6 Thin, TSOT-23-6 | Unknown | 6 | No | 1.15W | Dual | 1.15W | 2 | 6-TSOP | 205pF | 2.5A | 20V | 40V | 3V | 1.4W | 215mOhm | 40V | N and P-Channel | 205pF @ 20V | 3 V | 125mOhm @ 2.2A, 10V | 3V @ 250μA | 2.5A 1.95A | 7nC @ 10V | Logic Level Gate | 125 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | 1.75mm | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg309dyt1e3-datasheets-1594.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 15V | 10μA | 16 | 13 Weeks | 36V | 13V | 100Ohm | yes | Tin | No | 4 | 1nA | e3 | Non-Inverting | 600mW | GULL WING | 260 | 15V | 1.27mm | DG309 | 16 | 1 | 40 | Multiplexer or Switches | 4 | R-PDSO-G16 | SPST | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 20mA | 85Ohm | 78 dB | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4816dyt1ge3-datasheets-2280.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 30 | 1.25W | 2 | FET General Purpose Powers | 5ns | 7.7A | 20V | SILICON | COMPLEX | METAL-OXIDE SEMICONDUCTOR | 1W 1.25W | 5.3A | 0.022Ohm | 30V | 2 N-Channel (Half Bridge) | 22m Ω @ 6.3A, 10V | 2V @ 250μA | 5.3A 7.7A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4053EEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 16 | 18 Weeks | 78Ohm | 16 | unknown | 3 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 3 | 930MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 2:1 | SPDT | 1nA | 2pF 3.1pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5905BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5905bdct1ge3-datasheets-2307.pdf | 8-SMD, Flat Lead | 3.1W | SI5905 | 1206-8 ChipFET™ | 350pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 350pF @ 4V | 80mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 11nC @ 8V | Logic Level Gate | 80 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2517EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2517edqt1ge3-datasheets-6857.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 19 Weeks | unknown | 2 | 221MHz | 3.1Ohm | 2:1 | 1.8V~5.5V | SPDT | 40ns, 33ns | -19.4pC | 10m Ω | -62dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6966DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6966dqt1ge3-datasheets-2331.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 830mW | SI6966 | 2 | Dual | 830mW | 2 | 8-TSSOP | 11 ns | 9ns | 11 ns | 36 ns | 4.5A | 12V | 20V | 830mW | 30mOhm | 2 N-Channel (Dual) | 30mOhm @ 4.5A, 4.5V | 1.4V @ 250μA | 4A | 20nC @ 4.5V | Logic Level Gate | 30 mΩ |
