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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIRA60DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | No SVHC | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100A | 30V | 2.2V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94m Ω @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 60nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC931EVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET®, WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4686dyt1e3-datasheets-5730.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 20 ns | 20ns | 8 ns | 20 ns | 18.2A | 20V | SILICON | SWITCHING | 30V | 30V | 3W Ta 5.2W Tc | 0.0095Ohm | N-Channel | 1220pF @ 15V | 3 V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 18.2A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| V30391-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9110TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 27ns | 17 ns | 15 ns | -3.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2.5W Ta 25W Tc | P-Channel | 200pF @ 25V | 1.2 Ω @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIB441EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib441edkt1ge3-datasheets-0168.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 14 Weeks | 6 | yes | EAR99 | No | DUAL | Single | 13W | 1 | S-PDSO-N3 | 42ns | 50 ns | 60 ns | 8.3A | 8V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 40A | 0.028Ohm | -12V | P-Channel | 1180pF @ 6V | 25.5m Ω @ 4A, 4.5V | 900mV @ 250μA | 9A Tc | 33nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7655DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7655dnt1ge3-datasheets-8919.pdf | PowerPAK® 1212-8S | 3.3mm | 780μm | 3.3mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | C BEND | 2 | Dual | 4.8W | 1 | S-PDSO-C5 | 45 ns | 110 ns | -40A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 4.8W Ta 57W Tc | 0.0036Ohm | -20V | P-Channel | 6600pF @ 10V | 3.6m Ω @ 20A, 10V | 1.1V @ 250μA | 40A Tc | 225nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| IRFIB6N60APBF | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib6n60a-datasheets-8555.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 750mOhm | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 5.5A | 30V | 600V | 4V | 60W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 4 V | 750mOhm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SI7636DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7636dpt1e3-datasheets-9141.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 4mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 5600pF @ 15V | 1 V | 4m Ω @ 25A, 10V | 3V @ 250μA | 17A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SIHD7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | Tin | No | GULL WING | 1 | Single | 78W | 1 | R-PSSO-G2 | 26 ns | 26ns | 28 ns | 48 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 600V | 609V | 2V | 78W Tc | TO-252AA | 7A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRFBC40STRLPBF | Vishay Siliconix | $0.28 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.2Ohm | 3 | Tin | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHA6N80E-GE3 | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha6n80ege3-datasheets-3351.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 31W Tc | 820mOhm | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA10DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sisa10dnt1ge3-datasheets-2152.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | FLAT | 240 | 1 | Dual | 40 | 3.6W | 1 | FET General Purpose Powers | S-PDSO-F5 | 20 ns | 20 ns | 27 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 3.6W Ta 39W Tc | 0.0037Ohm | 20 mJ | 30V | N-Channel | 2425pF @ 15V | 3.7m Ω @ 10A, 10V | 2.2V @ 250μA | 30A Tc | 51nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||
| SQM50034EL_GE3 | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50034elge3-datasheets-4101.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | N-Channel | 6100pF @ 25V | 3.9mOhm @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ433EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj433ept1ge3-datasheets-3220.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 30V | 83W Tc | P-Channel | 4877pF @ 15V | 8.1mOhm @ 16A, 10V | 2.5V @ 250μA | 75A Tc | 108nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1440EH-T1_GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1440eht1ge3-datasheets-7915.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 3.3W Tc | 1.7A | 0.12Ohm | 17 pF | N-Channel | 344pF @ 15V | 120m Ω @ 3.8A, 10V | 2.5V @ 250μA | 1.7A Tc | 5.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7810DN-T1-GE3 | Vishay Siliconix | $1.18 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | 1 | Single | 1.5W | 1 | FET General Purpose Powers | S-PDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 0.062Ohm | 100V | N-Channel | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQJA20EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja20ept1ge3-datasheets-8593.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 14 ns | 27 ns | 22.5A | 20V | 200V | 68W Tc | 41mOhm | 200V | N-Channel | 1300pF @ 25V | 50mOhm @ 10A, 10V | 3.5V @ 250μA | 22.5A Tc | 27nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-09L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50n0609le3-datasheets-5807.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 9.3mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 10 ns | 15ns | 20 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 136W Tc | TO-252AA | 60V | N-Channel | 2650pF @ 25V | 2 V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SIJA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija58dpt1ge3-datasheets-0836.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.1W | 175°C | 10 ns | 28 ns | 29.3A | 27.7W Tc | 40V | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N03-1M5L_GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n031m5lge3-datasheets-6370.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | 375W | 1 | TO-263 | 15.605nF | 18 ns | 11ns | 11 ns | 64 ns | 120A | 20V | 30V | 2V | 375W Tc | 1.5mOhm | 30V | N-Channel | 15605pF @ 15V | 1.5mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 1.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4848DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 10ns | 17 ns | 24 ns | 2.7A | 20V | SILICON | 2V | 1.5W Ta | 150V | N-Channel | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFBE30STRLPBF | Vishay Siliconix | $2.65 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | 3 | No | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ2348ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq2348est1ge3-datasheets-0805.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | TO-236AB | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQA410EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa410ejt1ge3-datasheets-2530.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | N-Channel | 485pF @ 10V | 28mOhm @ 5A, 4.5V | 1.1V @ 250μA | 7.8A Tc | 8nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR640ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir640adpt1ge3-datasheets-3002.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 260 | 1 | Single | 30 | 6.25W | 1 | R-PDSO-F5 | 38 ns | 70ns | 12 ns | 42 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2V | 6.25W Ta 104W Tc | 350A | 0.0025Ohm | 40V | N-Channel | 4240pF @ 20V | 2m Ω @ 20A, 10V | 2V @ 250μA | 41.6A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7858ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7858adpt1ge3-datasheets-0758.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 40 ns | 40ns | 70 ns | 140 ns | 29A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 20A | 60A | 12V | N-Channel | 5700pF @ 6V | 2.6m Ω @ 29A, 4.5V | 1.5V @ 250μA | 20A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||
| SI7611DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7611dnt1ge3-datasheets-7908.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 10 ns | 11ns | 9 ns | 30 ns | -18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 39W Tc | 9.3A | 20A | 26 mJ | -40V | P-Channel | 1980pF @ 20V | -3 V | 25m Ω @ 9.3A, 10V | 3V @ 250μA | 18A Tc | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||
| SISA96DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa96dnt1ge3-datasheets-9179.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 150°C | 8 ns | 13 ns | 14.8A | 26.5W Tc | 30V | N-Channel | 1385pF @ 15V | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 16A Tc | 15nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8439DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8439dbt1e1-datasheets-9962.pdf | 4-UFBGA | 4 | 13 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 1 | 30 ns | 25ns | 210 ns | 330 ns | -9.2A | -800mV | SILICON | SWITCHING | 8V | -400mV | 1.1W Ta 2.7W Tc | 0.025Ohm | -8V | P-Channel | 25m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 50nC @ 4.5V | 1.2V 4.5V | ±5V |
