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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Switching | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG541DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 3.5mA | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500MHz | 6mA | 16 | 200.686274mg | 18V | 10V | 60Ohm | 16 | no | No | 4 | e0 | RGB, T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | Non-Inverting | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 15-3V | 70 ns | 50 ns | 15V | 12V | Dual, Single | 10V | 4 | 20mA | 60Ohm | BREAK-BEFORE-MAKE | NO | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6404DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6404dqt1ge3-datasheets-6476.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | No | 1 | Single | 8-TSSOP | 35 ns | 35ns | 50 ns | 100 ns | 8.6A | 12V | 30V | 1.08W Ta | 9mOhm | N-Channel | 9mOhm @ 11A, 10V | 600mV @ 250μA | 8.6A Ta | 48nC @ 4.5V | 9 mΩ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4932DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4932dyt1ge3-datasheets-1274.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 15MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.2W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | 21 ns | 10ns | 8 ns | 26 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 15m Ω @ 7A, 10V | 2.5V @ 250μA | 48nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6404DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6404dqt1ge3-datasheets-6476.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | Unknown | 8 | 1 | Single | 1.08W | 1 | 8-TSSOP | 35 ns | 35ns | 35 ns | 100 ns | 8.6A | 12V | 30V | 1.08W Ta | 9mOhm | 30V | N-Channel | 600 mV | 9mOhm @ 11A, 10V | 600mV @ 250μA | 8.6A Ta | 48nC @ 4.5V | 9 mΩ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4917EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq4917eyt1ge3-datasheets-2053.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 12 Weeks | 8 | unknown | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 5W | 2 | 8A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W Tc | 8A | 2 P-Channel (Dual) | 1910pF @ 30V | 48m Ω @ 4.3A, 10V | 2.5V @ 250μA | 8A Tc | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7196DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7196dpt1ge3-datasheets-0247.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 13 Weeks | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | R-PDSO-C5 | 21 ns | 12ns | 12 ns | 22 ns | 15.8A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 41.6W Tc | 50A | 20 mJ | 30V | N-Channel | 1577pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1922EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1922edht1ge3-datasheets-3847.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1922 | 6 | Dual | 30 | 740mW | 2 | FET General Purpose Power | 150°C | 22 ns | 80ns | 220 ns | 645 ns | 1.3A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 198m Ω @ 1A, 4.5V | 1V @ 250μA | 2.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7392ADP-T1-E3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392adpt1e3-datasheets-6602.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 35ns | 8 ns | 23 ns | 17.5A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 30A | 50A | 0.0075Ohm | 30 mJ | 30V | N-Channel | 1465pF @ 15V | 7.5m Ω @ 12.5A, 10V | 2.5V @ 250μA | 30A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4909DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4909dyt1ge3-datasheets-5118.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 3.2W | 2 | Dual | 2W | 2 | 150°C | 8-SO | 2nF | 10 ns | 9ns | 13 ns | 50 ns | -8A | 20V | 40V | -1.2V | 3.2W | 21mOhm | -40V | 2 P-Channel (Dual) | 2000pF @ 20V | 27mOhm @ 8A, 10V | 2.5V @ 250μA | 8A | 63nC @ 10V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7388DP-T1-GE3 | Vishay Siliconix | $7.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7388dpt1e3-datasheets-6596.pdf | PowerPAK® SO-8 | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | 14 ns | 10ns | 20 ns | 44 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 12A | 50A | 0.007Ohm | 30V | N-Channel | 7m Ω @ 19A, 10V | 1.6V @ 250μA | 12A Ta | 24nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA923AEDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia923aedjt1ge3-datasheets-5929.pdf | PowerPAK® SC-70-6 Dual | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | EAR99 | 7.8W | NO LEAD | SIA923 | 2 | Dual | 2 | 15 ns | 16ns | 10 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 0.054Ohm | -20V | 2 P-Channel (Dual) | 770pF @ 10V | 54m Ω @ 3.8A, 4.5V | 900mV @ 250μA | 25nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7668ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7668adpt1e3-datasheets-6674.pdf | PowerPAK® SO-8 | 5.15mm | 1.04mm | 6.15mm | 5 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 33 ns | 33ns | 14 ns | 56 ns | 31A | 12V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 40A | 70A | 0.003Ohm | 30V | N-Channel | 8820pF @ 15V | 3m Ω @ 25A, 10V | 1.8V @ 250μA | 40A Tc | 170nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ956EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sqj956ept1ge3-datasheets-7384.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 60V | 34W | 2 N-Channel (Dual) | 1395pF @ 30V | 26.7mOhm @ 5.2A, 10V | 2.5V @ 250μA | 23A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1039X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1039xt1e3-datasheets-7770.pdf | SOT-563, SOT-666 | 6 | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | DUAL | FLAT | 260 | 6 | Single | 40 | 1 | Other Transistors | 15 ns | 20ns | 16 ns | 30 ns | 870mA | 8V | SILICON | SWITCHING | 12V | 170mW Ta | 0.87A | -12V | P-Channel | 165m Ω @ 870mA, 4.5V | 450mV @ 250μA (Min) | 870mA Ta | 6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | 2 | Dual | 40 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.5V | 10A | 100V | 2 N-Channel (Dual) | 3.5 V | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4446DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4446dyt1e3-datasheets-8321.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.1W | 1 | 7 ns | 11ns | 8 ns | 27 ns | 3.9A | 12V | SILICON | SWITCHING | 40V | 40V | 1.6V | 1.1W Ta | 30A | 0.04Ohm | N-Channel | 700pF @ 20V | 40m Ω @ 5.2A, 10V | 1.6V @ 250μA | 3.9A Ta | 12nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS944ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs944enwt1ge3-datasheets-0142.pdf | PowerPAK® 1212-8W Dual | 14 Weeks | PowerPAK® 1212-8W Dual | 40V | 27.8W Tc | 2 N-Channel (Dual) | 615pF @ 25V | 25mOhm @ 1.25A, 10V | 2.5V @ 250μA | 6A Tc | 10nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5486DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5486dut1e3-datasheets-8521.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | Lead Free | 3 | Unknown | 15MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Powers | R-XDSO-N3 | 7 ns | 15ns | 10 ns | 55 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 1V | 3.1W Ta 31W Tc | 40A | 20V | N-Channel | 2100pF @ 10V | 15m Ω @ 7.7A, 4.5V | 1V @ 250μA | 12A Tc | 54nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4937EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4937eyt1ge3-datasheets-0291.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 6 ns | 8ns | 8 ns | 15 ns | 5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 480pF @ 25V | 75mOhm @ 3.9A, 10V | 2.5V @ 250μA | 5A Tc | 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7774DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7774dpt1ge3-datasheets-2402.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 5W Ta 48W Tc | N-Channel | 2630pF @ 15V | 3.8m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 66nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1563AEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sq1563aeht1ge3-datasheets-3427.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | PowerPAK® SC-70-6 Dual | 20V | 1.5W | N and P-Channel | 89pF @ 10V 84pF @ 10V | 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V | 1.5V @ 250μA | 850mA Tc | 1.25nC @ 4.5V, 1.33nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5433BDC-T1-GE3 | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5433bdct1e3-datasheets-8454.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 12 ns | 25ns | 55 ns | 80 ns | -5A | 8V | SILICON | 20V | 1.3W Ta | 0.037Ohm | -20V | P-Channel | 37m Ω @ 4.8A, 4.5V | 1V @ 250μA | 4.8A Ta | 22nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA906EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia906edjt1ge3-datasheets-4245.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 850μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 46mOhm | 6 | yes | EAR99 | Tin | C-07431-DUAL | unknown | e3 | 7.8W | NO LEAD | 260 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | Not Qualified | 150°C | 5 ns | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7886ADP-T1-E3 | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7886adpt1e3-datasheets-3150.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | 8 | 1 | Single | PowerPAK® SO-8 | 6.45nF | 17 ns | 14ns | 14 ns | 158 ns | 15A | 12V | 30V | 1.9W Ta | 4mOhm | N-Channel | 6450pF @ 15V | 4mOhm @ 25A, 10V | 1.5V @ 250μA | 15A Ta | 60nC @ 4.5V | 4 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7223DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7223dnt1ge3-datasheets-5177.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 30V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 1425pF @ 15V | 26.4mOhm @ 8A, 10V | 2.5V @ 250μA | 6A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE848DF-T1-E3 | Vishay Siliconix | $0.49 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie848dft1ge3-datasheets-2513.pdf | 10-PolarPAK® (L) | Lead Free | 2.2MOhm | 10 | No | Single | 5.2W | 1 | 10-PolarPAK® (L) | 6.1nF | 45 ns | 30ns | 40 ns | 70 ns | 43A | 20V | 30V | 5.2W Ta 125W Tc | 1.6mOhm | 30V | N-Channel | 6100pF @ 15V | 1.6mOhm @ 25A, 10V | 2.5V @ 250μA | 60A Tc | 138nC @ 10V | 1.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 150mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 2 | 30 | 1.7W | 2 | 4A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 20V | N and P-Channel | 285pF @ 10V | 600 mV | 55m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF8N50L-E3 | Vishay Siliconix | $4.55 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf8n50le3-datasheets-3238.pdf | TO-220-3 Full Pack | 3 | 6.000006g | 3 | yes | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 17.3 ns | 35ns | 17 ns | 23.6 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 8A | 22A | 1Ohm | N-Channel | 873pF @ 25V | 1 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1902CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902cdlt1ge3-datasheets-8642.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 235mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 420mW | GULL WING | 260 | Dual | 30 | 300mW | 2 | FET General Purpose Powers | 150°C | 4 ns | 13ns | 9 ns | 11 ns | 1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 62pF @ 10V | 235m Ω @ 1A, 4.5V | 1.5V @ 250μA | 1.1A | 3nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P08-11-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110p0811e3-datasheets-3282.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | TO-263 (D2Pak) | 11.5nF | 25 ns | 410ns | 470 ns | 145 ns | 110A | 20V | 80V | 13.6W Ta 375W Tc | 11.1mOhm | P-Channel | 11500pF @ 40V | 11.1mOhm @ 20A, 10V | 4V @ 250μA | 110A Tc | 280nC @ 10V | 11.1 mΩ | 10V | ±20V |
