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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIDR610DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr610dpt1ge3-datasheets-5162.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 200V | 6.25W Ta 125W Tc | N-Channel | 1380pF @ 100V | 31.9mOhm @ 10A, 10V | 4V @ 250μA | 8.9A Ta 39.6A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 800μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg221bdyt1e3-datasheets-0185.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 1.5mA | 16 | 12 Weeks | 1.627801g | 18V | 13V | 90Ohm | 16 | yes | EAR99 | No | 4 | e3 | Matte Tin (Sn) | 470mW | 15V | DG221 | 16 | 1 | 470mW | Multiplexer or Switches | SPST | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | 70 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH11N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihh11n65eft1ge3-datasheets-5480.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 650V | 130W Tc | N-Channel | 1243pF @ 100V | 382m Ω @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 8-CDIP (0.300, 7.62mm) | 10.16mm | 3.94mm | 7.62mm | 1μA | 12 Weeks | 36V | 13V | 35Ohm | 8 | No | 600mW | 1 | 600mW | 1 | 8-CERDIP | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 2 | 1 | 35Ohm | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA25N50E-E3 | Vishay Siliconix | $11.78 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n50ee3-datasheets-5891.pdf | TO-220-3 Full Pack | 18 Weeks | 6.000006g | 145mOhm | 1 | Single | TO-220 Full Pack | 1.98nF | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | 500V | 35W Tc | 145mOhm | 500V | N-Channel | 1980pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-CDIP (0.300, 7.62mm) | 12 Weeks | 1 | 8-CERDIP | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf15n65ege3-datasheets-6194.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | 650V | 34W Tc | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | VIDEO APPLICATION | No | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 15-3V | 500MHz | 50 ns | 35 ns | 15V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N65E-GE3 | Vishay Siliconix | $23.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n65ege3-datasheets-6467.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | Unknown | 3 | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 650V | 650V | 227W Tc | TO-220AB | 56A | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG528BK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg529ak883-datasheets-2725.pdf | 18-CDIP (0.300, 7.62mm) | 36V | 13V | 450Ohm | 18 | 1 | 18-CERDIP | 22V | 7V | 450Ohm | 8:1 | ±15V | 5nA | 5pF 25pF | 4pC | 27Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB180N60E-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb180n60ege3-datasheets-6754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | no | VIDEO APPLICATION | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 16 | 1 | SPST | 30 | 600mW | Multiplexer or Switches | 1 | Not Qualified | 500MHz | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NO/NC | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR638ADP-T1-RE3 | Vishay Siliconix | $2.18 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir638adpt1re3-datasheets-7448.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 104W Tc | N-Channel | 9100pF @ 100V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 165nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM184BEA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishay-sjm184bea01-datasheets-0083.pdf | 16 | No | 18V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | -400V | -1.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 7Ohm | 3 | No | 18A | 400V | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | -1.8A | 20V | 400V | -4V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM190BEA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N03-2M2P-E3 | Vishay Siliconix | $3.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n032m2pe3-datasheets-9104.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 2.2mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 55 ns | 180ns | 12 ns | 55 ns | 33A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | 90A | 90A | 30V | N-Channel | 12065pF @ 15V | 2.2m Ω @ 32A, 10V | 2.5V @ 250μA | 90A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM187BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60E-GE3 | Vishay Siliconix | $1.90 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd14n60ege3-datasheets-9777.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 147W Tc | N-Channel | 1205pF @ 100V | 309mOhm @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM181BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-GE3 | Vishay Siliconix | $9.82 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 14 Weeks | 38.000013g | Unknown | 39mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 520W | 1 | FET General Purpose Power | 63 ns | 105ns | 120 ns | 290 ns | 73A | 20V | SILICON | SWITCHING | 2V | 520W Tc | TO-247AC | 600V | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073704PA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | -55°C~125°C TA | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | 2016 | 9.78mm | 7.62mm | 8 | 1 | NO | DUAL | THROUGH-HOLE | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | 1 | R-GDIP-T8 | -15V | 25Ohm | 82 dB | 88ns | 1:1 | SPST - NC | ±15V | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92041022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | LCC | 36V | 13V | 20 | No | 4 | 1.2W | 22V | 7V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60ege3-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 89961012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | CMOS | Non-RoHS Compliant | LCC | 20 | 36V | 13V | 20 | 2 | QUAD | NO LEAD | 20 | MILITARY | 2 | DPST | 900mW | Multiplexer or Switches | 5+-15V | Not Qualified | 22V | 7V | 4 | SEPARATE OUTPUT | BREAK-BEFORE-MAKE | 150ns | NO | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 30V | 30V | 1.7W Ta 2.7W Tc | 5A | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9204201XC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2011 | FlatPack | 16 | 44V | 13V | 16 | No | 1 | DUAL | 15V | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 1 | 20V | 5V | -15V | 30mA | 8 | 100Ohm | 75 dB | 15Ohm | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB9N65APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfb9n65apbf-datasheets-3633.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 930mOhm | 3 | Tin | No | 1 | Single | 167W | 1 | TO-220AB | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 8.5A | 30V | 650V | 4V | 167W Tc | 739 ns | 930mOhm | N-Channel | 1417pF @ 25V | 4 V | 930mOhm @ 5.1A, 10V | 4V @ 250μA | 8.5A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 10 Weeks | 1.627801g | Unknown | 12V | 2.7V | 50Ohm | 16 | 1μA | 900mW | DG413 | 4 | 900mW | 4 | 16-DIP | 280MHz | SPST | 85 ns | 60 ns | 6V | 5V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz |
