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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM50010E-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50010ege3-datasheets-6517.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 1.75mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI260N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi260n6f6-datasheets-6519.pdf | TO-262-3 Full Pack, I2Pak | 2.240009g | 3 | OBSOLETE (Last Updated: 7 months ago) | EAR99 | No | STFI260N | 1 | Single | FET General Purpose Powers | 31.4 ns | 165ns | 62.6 ns | 144.4 ns | 80A | 20V | 60V | 41.7W Tc | N-Channel | 11400pF @ 25V | 3m Ω @ 60A, 10V | 4V @ 250μA | 80A Tc | 183nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP52N25M5 |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP13NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk60z-datasheets-6353.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP13N | 3 | Single | 35W | 1 | FET General Purpose Power | 22 ns | 14ns | 12 ns | 61 ns | 4.5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 35W Tc | TO-220AB | 52A | 0.55Ohm | 400 mJ | 600V | N-Channel | 2030pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 13A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPW60R125CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 92W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 18A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP120N08S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp120n08s403aksa1-datasheets-6454.pdf | TO-220-3 | 20.7mm | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 278W | 1 | 175°C | 30 ns | 15ns | 50 ns | 60 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 278W Tc | TO-220AB | 480A | 0.0028Ohm | 920 mJ | 80V | N-Channel | 11550pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 223μA | 120A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHG16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihg16n50ce3-datasheets-6459.pdf | TO-247-3 | 3 | 11 Weeks | 38.000013g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-247AC | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STFI20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi20n65m5-datasheets-6464.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | Lead Free | 3 | EAR99 | No | STFI20N | Single | FET General Purpose Powers | 43 ns | 7.5ns | 7.5 ns | 11.5 ns | 18A | 25V | 130W Tc | 650V | N-Channel | 1345pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N65E-GE3 | Vishay Siliconix | $23.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n65ege3-datasheets-6467.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | Unknown | 3 | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 650V | 650V | 227W Tc | TO-220AB | 56A | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCP110N65F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp110n65f-datasheets-6412.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | 3 | 12 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 31 ns | 21ns | 5.7 ns | 89 ns | 35A | 30V | SILICON | SWITCHING | 357W Tc | TO-220AB | 809 mJ | 650V | N-Channel | 4895pF @ 100V | 110m Ω @ 17.5A, 10V | 5V @ 3.5mA | 35A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP10N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10n105k5-datasheets-5764.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP10 | NOT SPECIFIED | FET General Purpose Power | 6A | Single | 1050V | 130W Tc | 6A | N-Channel | 545pF @ 100V | 1.3 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 21.5nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP400N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 1.7mOhm | 3 | EAR99 | No | STP400 | 1 | Single | FET General Purpose Powers | 120A | 20V | 300W Tc | 40V | N-Channel | 20000pF @ 25V | 1.7m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 377nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N60EF-GE3 | Vishay Siliconix | $15.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n60efge3-datasheets-6421.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6018JNXC7G | ROHM Semiconductor | $4.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6018jnxc7g-datasheets-6430.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 72W Tc | TO-220AB | 18A | 54A | 0.286Ohm | 526 mJ | N-Channel | 1300pF @ 100V | 286m Ω @ 9A, 15V | 7V @ 4.2mA | 18A Tc | 42nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP244PBF | Vishay Siliconix | $3.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp244pbf-datasheets-6432.pdf | 250V | 15A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 49ns | 24 ns | 42 ns | 15A | 20V | 250V | 4V | 150W Tc | 280mOhm | 250V | N-Channel | 1400pF @ 25V | 4 V | 280mOhm @ 9A, 10V | 4V @ 250μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STI18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw18n65m5-datasheets-4903.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | No | STI18N | Single | 110W | 1 | R-PSIP-T3 | 36 ns | 7ns | 9 ns | 11 ns | 15A | 25V | SILICON | DRAIN | SWITCHING | 110W Tc | 60A | 0.22Ohm | 650V | N-Channel | 1240pF @ 100V | 220m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120P06-6M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 | 12 Weeks | TO-220AB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP076N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp076n15n5aksa1-datasheets-6440.pdf | 20.7mm | 3 | 13 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 214W | 1 | 175°C | R-PSFM-T3 | 14 ns | 20 ns | 112A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 448A | 5.9mOhm | 150V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK22A65X5,S5X | Toshiba Semiconductor and Storage | $5.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R125CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 92W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 18A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60EF-GE3 | Vishay Siliconix | $4.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60efge3-datasheets-6385.pdf | TO-247-3 | 21 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF120NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb120nf10t4-datasheets-5136.pdf | TO-220-3 Full Pack | Lead Free | 3 | 10.5MOhm | 3 | yes | EAR99 | No | 41A | e3 | Matte Tin (Sn) - annealed | 100V | STF12 | 3 | Single | 45W | 1 | FET General Purpose Power | 25 ns | 90ns | 68 ns | 132 ns | 41A | 20V | SILICON | ISOLATED | SWITCHING | 45W Tc | TO-220AB | 550 mJ | 100V | N-Channel | 5200pF @ 25V | 10.5m Ω @ 60A, 10V | 4V @ 250μA | 41A Tc | 233nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCP104N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fcp104n60-datasheets-6393.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | 3 | 12 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 26 ns | 18ns | 3.3 ns | 72 ns | 37A | 30V | SILICON | SWITCHING | 600V | 600V | 357W Tc | TO-220AB | 809 mJ | N-Channel | 4165pF @ 380V | 104m Ω @ 18.5A, 10V | 3.5V @ 250μA | 37A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FCA20N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fca20n60f-datasheets-6400.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | FCA20N60 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | SWITCHING | 208W Tc | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STFI31N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi31n65m5-datasheets-6407.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | Lead Free | 3 | EAR99 | No | STFI31N | Single | 30W | FET General Purpose Powers | 46 ns | 8ns | 8.5 ns | 11 ns | 22A | 25V | 30W Tc | 650V | N-Channel | 1865pF @ 100V | 148m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP38N30X3M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 300V | 34W Tc | N-Channel | 2440pF @ 10V | 38A Tc | 35nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP104N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcp104n60f-datasheets-6338.pdf | TO-220-3 | 10.36mm | 15.215mm | 4.672mm | 3 | 12 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 34 ns | 50ns | 21.4 ns | 102 ns | 37A | 5V | SILICON | SWITCHING | 357W Tc | TO-220AB | 809 mJ | 600V | N-Channel | 6130pF @ 25V | 104m Ω @ 18.5A, 10V | 5V @ 250μA | 37A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHB23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb23n60ege3-datasheets-6346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPZA60R180P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r180p7xksa1-datasheets-6350.pdf | TO-247-4 | 4 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 72W Tc | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW13NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk60z-datasheets-6353.pdf | 600V | 13A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 550mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW13N | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 14ns | 12 ns | 61 ns | 13A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | 52A | 400 mJ | 600V | N-Channel | 2030pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 13A Tc | 92nC @ 10V | 10V | ±30V |
