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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Source Url Status Check Date | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRF2903ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf2903zstrl-datasheets-2158.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 231W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 100ns | 37 ns | 48 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 231W Tc | 0.0024Ohm | 30V | N-Channel | 6320pF @ 25V | 2 V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 160A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| AUIRF3415 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf3415-datasheets-0693.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 200W | 1 | FET General Purpose Power | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-220AB | 0.042Ohm | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 2 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| AUIRFS3004 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3004trl-datasheets-9862.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | AUIRFS3004 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 220ns | 130 ns | 90 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 380W Tc | 40V | N-Channel | 9200pF @ 25V | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| AUIRFS3006-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs30067p-datasheets-0708.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 6 | 16 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G6 | 14 ns | 61ns | 69 ns | 118 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 375W Tc | TO-263CB | 303 mJ | 60V | N-Channel | 8850pF @ 50V | 2.1m Ω @ 168A, 10V | 4V @ 250μA | 240A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||
| AUIRF7207QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7207qtr-datasheets-0643.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 26 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 11 ns | 24ns | 41 ns | 43 ns | 5.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -700mV | 2.5W Ta | 43A | 0.06Ohm | -20V | P-Channel | 780pF @ 15V | 60m Ω @ 5.4A, 4.5V | 1.6V @ 250μA | 5.4A Ta | 22nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||
| AUIRLR2908 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/infineontechnologies-auirlr2908-datasheets-0651.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 3 | EAR99 | No | Single | 120W | 1 | FET General Purpose Power | 12 ns | 95ns | 55 ns | 36 ns | 30A | 16V | 120W Tc | 80V | N-Channel | 1890pF @ 25V | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 30A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| AUIRFZ24NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfz24ns-datasheets-3018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN OVER NICKEL | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PDSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | TO-263AB | 17A | 68A | 0.07Ohm | 71 mJ | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| AUIRLS3034-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirls30347trl-datasheets-0181.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 6 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 380W Tc | TO-263CB | 240A | 1540A | 0.0014Ohm | 250 mJ | N-Channel | 10990pF @ 40V | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 240A Tc | 180nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| AUIRFZ46NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-auirfz46nl-datasheets-0672.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 9 Weeks | 3 | EAR99 | No | Single | 3.8W | 1 | FET General Purpose Power | 14 ns | 76ns | 57 ns | 52 ns | 39A | 20V | 3.8W Ta 107W Tc | 55V | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 39A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRF3315S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3315strl-datasheets-0176.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | No SVHC | 3 | EAR99 | No | Single | 3.8W | 1 | FET General Purpose Power | 9.6 ns | 32ns | 38 ns | 49 ns | 21A | 20V | 2V | 3.8W Ta 94W Tc | 150V | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRLS3114Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirls3114z-datasheets-0613.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.67mm | 4.83mm | 9.65mm | 16 Weeks | 3 | EAR99 | Tin | No | 143W | 1 | FET General Purpose Power | 28 ns | 271ns | 60 ns | 43 ns | 56A | 20V | Single | 143W Tc | 40V | N-Channel | 3617pF @ 25V | 4.9m Ω @ 56A, 10V | 2.5V @ 100μA | 56A Tc | 53nC @ 4.5V | 10V | ±16V | ||||||||||||||||||||||||||||||||||
| AUIRLS4030 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirls4030trl-datasheets-9730.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 74 ns | 330ns | 170 ns | 110 ns | 180A | 16V | SILICON | DRAIN | SWITCHING | 370W Tc | 100V | N-Channel | 11360pF @ 50V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||
| AUIRLS3036-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirls30367trl-datasheets-9867.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 6 | 12 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 81 ns | 540ns | 170 ns | 89 ns | 240A | 16V | SILICON | DRAIN | SWITCHING | 1V | 380W Tc | TO-263CB | 300 mJ | 60V | N-Channel | 11270pF @ 50V | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 240A Tc | 160nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||
| AUIRFR9024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr9024n-datasheets-0633.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 38W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 55ns | 37 ns | 23 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 55V | 38W Tc | TO-252AA | 44A | 62 mJ | -55V | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||
| AUIRLR014N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirlr014ntrl-datasheets-0154.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 13 Weeks | No SVHC | 3 | EAR99 | Tin | No | Single | 28W | 1 | FET General Purpose Power | 6.5 ns | 47ns | 23 ns | 12 ns | 10A | 16V | 1V | 28W Tc | 55V | N-Channel | 265pF @ 25V | 140m Ω @ 6A, 10V | 3V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| AUIRFS3206 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3206trl-datasheets-7386.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 82ns | 83 ns | 55 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 840A | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IRF6892STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6892str1pbf-datasheets-8406.pdf | DirectFET™ Isometric S3C | Lead Free | 13 Weeks | 1.3mOhm | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 125A | Single | 25V | 2.1W Ta 42W Tc | N-Channel | 2510pF @ 13V | 1.7m Ω @ 28A, 10V | 2.1V @ 50μA | 28A Ta 125A Tc | 25nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| 2N7002-G | Comchip Technology | $0.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/comchiptechnology-2n7002g-datasheets-0592.pdf | TO-236-3, SC-59, SOT-23-3 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 250mA | Single | 60V | 350mW Ta | 0.25A | N-Channel | 25pF @ 25V | 3 Ω @ 250mA, 10V | 2.5V @ 250μA | 250mA Ta | 1nC @ 10V | 4.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||
| RP1L055SNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1l055sntr-datasheets-0026.pdf | 6-SMD, Flat Leads | 6 | EAR99 | DUAL | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | R-PDSO-F6 | 5.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2W Ta | 22A | 0.063Ohm | N-Channel | 730pF @ 10V | 49m Ω @ 5.5A, 10V | 3V @ 1mA | 5.5A Ta | 14nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRFR3504 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr3504trl-datasheets-0076.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 53ns | 22 ns | 36 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | TO-252AA | 87A | 0.0092Ohm | 480 mJ | 40V | N-Channel | 2150pF @ 25V | 9.2m Ω @ 30A, 10V | 4V @ 250μA | 56A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||
| AUIRFS4010-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs40107p-datasheets-0504.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 6 | 10 Weeks | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 19 ns | 56ns | 48 ns | 100 ns | 190A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 0.004Ohm | 330 mJ | 100V | N-Channel | 9830pF @ 50V | 4m Ω @ 110A, 10V | 4V @ 250μA | 190A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| AUIRFS3207Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3207z-datasheets-0510.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 68ns | 68 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 300W Tc | 670A | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||
| AUIRLL024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll024ntr-datasheets-0086.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 3.1A | 12A | 0.065Ohm | 120 mJ | N-Channel | 510pF @ 25V | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 3.1A Ta | 15.6nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||
| BUK961R4-30E,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk961r430e118-datasheets-9939.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 3 | 2013-06-14 00:00:00 | 30V | 357W Tc | N-Channel | 16150pF @ 25V | 1.4m Ω @ 25A, 5V | 2.1V @ 1mA | 120A Tc | 113nC @ 5V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLR3114Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirlu3114z-datasheets-1860.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 140ns | 50 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 1V | 140W Tc | TO-252AA | 500A | 0.0065Ohm | 260 mJ | 40V | N-Channel | 3810pF @ 25V | 4.9m Ω @ 42A, 10V | 2.5V @ 100μA | 42A Tc | 56nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||
| AUIRFZ44N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirfz44n-datasheets-0530.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 45W | 1 | FET General Purpose Power | 7.3 ns | 69ns | 60 ns | 47 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2V | 94W Tc | TO-220AB | 55V | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| AUIRLR3110Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | AUIRLR3110Z | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 1V | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||
| AUIRFS3306 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs3306trl-datasheets-1635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 230W Tc | 120A | 620A | 0.0042Ohm | 184 mJ | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRLR120N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirlr120n-datasheets-0551.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 4 ns | 35ns | 22 ns | 23 ns | 10A | 16V | SILICON | DRAIN | SWITCHING | 1V | 48W Tc | TO-252AA | 0.225Ohm | 85 mJ | 100V | N-Channel | 440pF @ 25V | 1 V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||
| AUIRL1404S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirl1404strl-datasheets-0162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.67mm | 4.83mm | 9.65mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 270ns | 130 ns | 38 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 640A | 0.004Ohm | 520 mJ | 40V | N-Channel | 6600pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V |
