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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRL2203N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirl2203n-datasheets-0486.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 8 Weeks | No SVHC | 3 | EAR99 | No | Single | 180W | 1 | FET General Purpose Power | 11 ns | 160ns | 66 ns | 23 ns | 75A | 16V | 1V | 180W Tc | 30V | N-Channel | 3290pF @ 25V | 1 V | 7m Ω @ 60A, 10V | 1V @ 250μA | 75A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRLL014N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll014ntr-datasheets-3150.pdf | TO-261-4, TO-261AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 55V | 1W Ta | N-Channel | 230pF @ 25V | 140m Ω @ 2A, 10V | 2V @ 250μA | 2A Ta | 14nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3006 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3006-datasheets-0498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 182ns | 189 ns | 118 ns | 195A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 0.0025Ohm | 60V | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRFS4010-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs40107p-datasheets-0504.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 6 | 10 Weeks | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 19 ns | 56ns | 48 ns | 100 ns | 190A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 0.004Ohm | 330 mJ | 100V | N-Channel | 9830pF @ 50V | 4m Ω @ 110A, 10V | 4V @ 250μA | 190A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRFS3207Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3207z-datasheets-0510.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 68ns | 68 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 300W Tc | 670A | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRFU1010Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | 13 Weeks | No SVHC | 3 | 140W | TO-262 | 17 ns | 42 ns | 91A | 55V | 5.8mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3107-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs31077p-datasheets-0418.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 6 | 7 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | Single | 370W | 1 | R-PSSO-G6 | 17 ns | 80ns | 64 ns | 100 ns | 240A | 20V | SILICON | DRAIN | SWITCHING | 370W Tc | TO-263CB | 0.0026Ohm | 320 mJ | 75V | N-Channel | 9200pF @ 50V | 2.6m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRFS4410Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs4410z-datasheets-0424.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | IRFS4410 | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 52ns | 57 ns | 43 ns | 97A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 230W Tc | 0.009Ohm | 242 mJ | 100V | N-Channel | 4820pF @ 50V | 2 V | 9m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| AUIRFS3004-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfs30047trl-datasheets-0012.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 16 Weeks | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 380W Tc | TO-263CB | 240A | 1610A | 0.00125Ohm | 290 mJ | N-Channel | 9130pF @ 25V | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRFS3107 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs3107trl-datasheets-0599.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 370W Tc | 195A | 900A | 0.003Ohm | 300 mJ | N-Channel | 9370pF @ 50V | 3m Ω @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFZ44NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-auirfz44ns-datasheets-0441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 60ns | 45 ns | 44 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 94W Tc | 55V | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AUIRLS3034 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirls3034-datasheets-0449.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 39 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 65 ns | 827ns | 355 ns | 97 ns | 195A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 255 mJ | 40V | N-Channel | 10315pF @ 25V | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRFR3607 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr3607-datasheets-0455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | No SVHC | 3 | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | AUIRFR3607 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 110ns | 96 ns | 43 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | TO-252AA | 80A | 0.009Ohm | 75V | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 56A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| AUIRF1405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf1405-datasheets-0462.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 9 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 330W | 1 | FET General Purpose Power | 13 ns | 190ns | 110 ns | 130 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 330W Tc | TO-220AB | 680A | 560 mJ | 55V | N-Channel | 5480pF @ 25V | 2 V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 75A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRFR4620 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr4620trl-datasheets-8257.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 36 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 3V | 144W Tc | TO-252AA | 0.078Ohm | 200V | N-Channel | 1710pF @ 50V | 78m Ω @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRF1902GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 3.9878mm | 8 | 2.5W | Single | 2.5W | 8-SO | 310pF | 5.9 ns | 13ns | 19 ns | 23 ns | 4.2A | 12V | 20V | 85mOhm | 20V | N-Channel | 310pF @ 15V | 85mOhm @ 4A, 4.5V | 700mV @ 250μA | 4.2A Ta | 7.5nC @ 4.5V | 85 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4010 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs4010-datasheets-0391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 720A | 0.0047Ohm | 100V | N-Channel | 9575pF @ 50V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRFS3806 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3806trl-datasheets-9426.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 71W Tc | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRFS3607 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3607trl-datasheets-3350.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | 0.009Ohm | 75V | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 80A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRFL024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfl024ntr-datasheets-0141.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 0.0028A | 0.075Ohm | N-Channel | 400pF @ 25V | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta | 18.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRF7478Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7478qtr-datasheets-0132.pdf | 8-SOIC (0.154, 3.90mm Width) | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.5W Ta | N-Channel | 1740pF @ 25V | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR1018E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr1018e-datasheets-0323.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | AUIRFR1018E | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 79A | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 56A Tc | 69nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NTMFS4854NST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SENSEFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntmfs4854nst1g-datasheets-9741.pdf | 8-PowerTDFN | Lead Free | 8 | 8 | CONSULT SALES OFFICE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.31W | 1 | FET General Purpose Power | 20 ns | 54ns | 45 ns | 38 ns | 24.4A | 16V | SILICON | SWITCHING | 900mW Ta 86.2W Tc | 15.2A | 25V | N-Channel | 4830pF @ 12V | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 15.2A Ta 149A Tc | 85nC @ 11.5V | 3.2V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFSL4510PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs4510trlpbf-datasheets-7679.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 15 Weeks | 2.084002g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | 13 ns | 32ns | 28 ns | 28 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 3V | 140W Tc | 250A | 100V | N-Channel | 3180pF @ 50V | 3 V | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 61A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRFP2907 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirfp2907-datasheets-0340.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 470W | 1 | FET General Purpose Power | 23 ns | 190ns | 130 ns | 130 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 470W Tc | TO-247AC | 840A | 0.0045Ohm | 75V | N-Channel | 13000pF @ 25V | 4.5m Ω @ 125A, 10V | 4V @ 250μA | 90A Tc | 620nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHF22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf22n60se3-datasheets-0345.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | Unknown | 190mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 250W | 1 | FET General Purpose Power | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2V | 250W Tc | TO-220AB | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | |||||||||||||||||||||||||||||||||||
| AUIRFR2405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr2405-datasheets-0350.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 39 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 130ns | 78 ns | 55 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-252AA | 56A | 220A | 55V | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 30A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRFR3806 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr3806trl-datasheets-3059.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 3 | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 71W Tc | TO-252AA | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| AUIRFR4615 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr4615trl-datasheets-8210.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 3V | 144W Tc | TO-252AA | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SIS436DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis436dnt1ge3-datasheets-9936.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 15 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 855pF @ 10V | 10.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V |
