Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRFR4615 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr4615trl-datasheets-8210.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 3V | 144W Tc | TO-252AA | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SIS436DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis436dnt1ge3-datasheets-9936.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 15 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 855pF @ 10V | 10.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| AUIRFP064N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfp064n-datasheets-0294.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 9 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 200W | 1 | FET General Purpose Power | 14 ns | 100ns | 70 ns | 43 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | TO-247AC | 0.008Ohm | 480 mJ | 55V | N-Channel | 4000pF @ 25V | 8m Ω @ 59A, 10V | 4V @ 250μA | 110A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRF3504 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirf3504-datasheets-0210.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 143W | 1 | FET General Purpose Power | 9.9 ns | 61ns | 29 ns | 24 ns | 87A | 20V | SILICON | DRAIN | SWITCHING | 2V | 143W Tc | TO-220AB | 0.0092Ohm | 40V | N-Channel | 2150pF @ 25V | 2 V | 9.2m Ω @ 52A, 10V | 4V @ 100μA | 87A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRF4905L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-auirf4905l-datasheets-0216.pdf | TO-262 | 10.67mm | 9.65mm | 4.83mm | 3 | 9 Weeks | 3 | EAR99 | No | Single | 25W | 1 | Other Transistors | 20 ns | 51 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 55V | 200W Tc | 280A | 0.02Ohm | -55V | P-Channel | 3500pF @ 25V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRF2807 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf2807-datasheets-0223.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 230W | 1 | FET General Purpose Power | 13 ns | 64ns | 48 ns | 49 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 230W Tc | TO-220AB | 280A | 75V | N-Channel | 3820pF @ 25V | 2 V | 13m Ω @ 43A, 10V | 4V @ 250μA | 75A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRF2903ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-auirf2903zl-datasheets-0229.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 231W | 1 | FET General Purpose Power | 24 ns | 100ns | 37 ns | 48 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 231W Tc | 0.0024Ohm | 30V | N-Channel | 6320pF @ 25V | 2 V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 160A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AUIRF9540N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirf9540n-datasheets-0236.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 250 | 30 | 140W | 1 | Other Transistors | 15 ns | 67ns | 51 ns | 51 ns | -23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | -2V | 140W Tc | TO-220AB | 76A | -100V | P-Channel | 1300pF @ 25V | 117m Ω @ 11A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRF9Z34N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirf9z34n-datasheets-0241.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 9 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | Single | 68W | 1 | Other Transistors | 13 ns | 55ns | 41 ns | 30 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 55V | -2V | 68W Tc | TO-220AB | 68A | -55V | P-Channel | 620pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AUIRF1404S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1404strl-datasheets-2747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 140ns | 26 ns | 72 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 200W Tc | 650A | 0.004Ohm | 40V | N-Channel | 7360pF @ 25V | 2 V | 4m Ω @ 95A, 10V | 4V @ 250μA | 75A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| AUIRLR3915TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirlr3915trl-datasheets-0252.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | 3 | EAR99 | No | 120W | 1 | FET General Purpose Power | 7.4 ns | 51ns | 100 ns | 83 ns | 61A | 16V | Single | 120W Tc | 55V | N-Channel | 1870pF @ 25V | 14m Ω @ 30A, 10V | 3V @ 250μA | 30A Tc | 92nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3007 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf3007-datasheets-0261.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 8 Weeks | 3 | EAR99 | No | Single | 200W | 1 | FET General Purpose Power | 12 ns | 80ns | 49 ns | 55 ns | 75A | 20V | 200W Tc | 75V | N-Channel | 3270pF @ 25V | 12.6m Ω @ 48A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFB3806 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfb3806-datasheets-0270.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 11 Weeks | No SVHC | 3 | No | Single | 71W | 1 | TO-220AB | 1.15nF | 6.3 ns | 49 ns | 43A | 20V | 60V | 2V | 71W Tc | 15.8mOhm | 60V | N-Channel | 1150pF @ 50V | 15.8mOhm @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 15.8 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AUIRF3808S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf3808s-datasheets-0277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 9 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 140ns | 120 ns | 68 ns | 106A | 20V | SILICON | DRAIN | SWITCHING | 2V | 200W Tc | 550A | 0.007Ohm | 75V | N-Channel | 5310pF @ 25V | 7m Ω @ 82A, 10V | 4V @ 250μA | 106A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRFP2602 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirfp2602-datasheets-0283.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 11 Weeks | No SVHC | 3 | EAR99 | No | Single | 380W | 1 | FET General Purpose Power | 70 ns | 490ns | 270 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 24V | 24V | 380W Tc | TO-247AC | 400 mJ | N-Channel | 11220pF @ 25V | 1.6m Ω @ 180A, 10V | 4V @ 250μA | 180A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRFR2407 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr2407trl-datasheets-4382.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 90ns | 66 ns | 65 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 0.026Ohm | 75V | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRF2805 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf2805-datasheets-0193.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 8 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 330W | 1 | FET General Purpose Power | 14 ns | 120ns | 110 ns | 68 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 330W Tc | TO-220AB | 700A | 0.0047Ohm | 55V | N-Channel | 5110pF @ 25V | 2 V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 75A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| AUIRF2805S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf2805s-datasheets-0200.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 120ns | 110 ns | 68 ns | 135A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 700A | 0.0047Ohm | 55V | N-Channel | 5110pF @ 25V | 2 V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 135A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| AUIRF7207Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-auirf7207q-datasheets-0205.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 5.4A | 43A | 0.06Ohm | 140 mJ | P-Channel | 780pF @ 15V | 60m Ω @ 5.4A, 4.5V | 1.6V @ 250μA | 5.4A Ta | 22nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| AUIRLL024NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll024ntr-datasheets-0086.pdf | TO-261-4, TO-261AA | 4 | 9 Weeks | No SVHC | 4 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.1W | 1 | FET General Purpose Power | 7.4 ns | 21ns | 25 ns | 18 ns | 3.1A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 1W Ta | 0.065Ohm | 55V | N-Channel | 510pF @ 25V | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 3.1A Ta | 15.6nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| AUIRF7416QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7416qtr-datasheets-0092.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 26 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 18 ns | 49ns | 60 ns | 59 ns | -10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1V | 2.5W Ta | 45A | 0.02Ohm | 370 mJ | -30V | P-Channel | 1700pF @ 25V | 20m Ω @ 5.6A, 10V | 2.04V @ 250μA | 10A Ta | 92nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRFH7004TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7004trpbf-datasheets-8205.pdf | 8-VQFN Exposed Pad | No SVHC | 5 | No | 156W | 8-PQFN (5x6) | 6.419nF | 15 ns | 51ns | 49 ns | 73 ns | 100A | 20V | 40V | N-Channel | 6419pF @ 25V | 3 V | 1.4mOhm @ 100A, 10V | 3.9V @ 150μA | 100A Tc | 194nC @ 10V | 1.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7401SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7401sfg13-datasheets-1622.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | Lead Free | 5 | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Gold | No | e3 | Matte Tin (Sn) | DUAL | 260 | 1 | Single | 40 | 1 | Other Transistors | S-PDSO-N5 | 11.3 ns | 15.4ns | 22 ns | 38 ns | 9.8A | 25V | SILICON | DRAIN | SWITCHING | 30V | 940mW Ta | -30V | P-Channel | 2987pF @ 15V | 11m Ω @ 12A, 20V | 3V @ 250μA | 9.8A Ta | 58nC @ 10V | 4.5V 20V | ±25V | |||||||||||||||||||||||||||||
| AUIRLZ44ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2017 | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7478QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-auirf7478qtr-datasheets-0131.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 26 Weeks | 26MOhm | 8 | EAR99 | No | 2.5W | 1 | FET General Purpose Power | 7.7 ns | 2.6ns | 13 ns | 44 ns | 7A | 20V | Single | 2.5W Ta | 7A | 60V | N-Channel | 1740pF @ 25V | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFL024NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfl024ntr-datasheets-0140.pdf | TO-261-4, TO-261AA | 4 | 9 Weeks | No SVHC | 4 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1W | 1 | FET General Purpose Power | 8.1 ns | 13.4ns | 17.7 ns | 22.2 ns | 2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta | 0.0028A | 0.075Ohm | 55V | N-Channel | 400pF @ 25V | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta | 18.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRF1018ES | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf1018es-datasheets-0147.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Lead, Tin | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRLR014NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirlr014ntrl-datasheets-0154.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 28W Tc | 10A | N-Channel | 265pF @ 25V | 140m Ω @ 6A, 10V | 3V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTGS3455T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TSOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL1404STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirl1404strl-datasheets-0162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 9 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | TO-263AB | 160A | 640A | 0.004Ohm | 520 mJ | N-Channel | 6600pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V |
