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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR9010TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | Other Transistors | R-PSSO-G2 | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD80R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd80r2k0p7atma1-datasheets-0162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 24W Tc | TO-252AA | 6A | 2Ohm | 6 mJ | N-Channel | 175pF @ 500V | 2 Ω @ 940mA, 10V | 3.5V @ 50μA | 3A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R5-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r530yl115-datasheets-0077.pdf | SC-100, SOT-669 | Lead Free | 12 Weeks | 4 | No | 88W | 1 | LFPAK56, Power-SO8 | 3.468nF | 39 ns | 62ns | 25 ns | 61 ns | 100A | 20V | 30V | 30V | 88W Tc | 2.5mOhm | 30V | N-Channel | 3468pF @ 12V | 2.4mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 57nC @ 10V | 2.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4015SPSQ-13 | Diodes Incorporated | $7.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4015spsq13-datasheets-0200.pdf | 8-PowerTDFN | 5 | 14 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 8.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1.3W Ta | 0.011Ohm | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 8.5A Ta | 47.5nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y18-75B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y1875b115-datasheets-0051.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 105W | 1 | 18.5 ns | 22.5ns | 19.8 ns | 44.5 ns | 49A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 105W Tc | MO-235 | N-Channel | 2173pF @ 25V | 18m Ω @ 20A, 10V | 4V @ 1mA | 49A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AO4430 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | No | DUAL | GULL WING | 8 | 3W | 1 | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Ta | 0.0055Ohm | N-Channel | 7270pF @ 15V | 5.5m Ω @ 18A, 10V | 2.5V @ 250μA | 18A Ta | 124nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD160P05TL | ROHM Semiconductor | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | yes | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | 260 | 3 | 10 | 1 | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 20W Tc | 32A | 0.05Ohm | P-Channel | 2000pF @ 10V | 50m Ω @ 16A, 10V | 3V @ 1mA | 16A Ta | 16nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5844NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-nvmfs5844nlt1g-datasheets-4463.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 89W | 1 | FET General Purpose Power | 12 ns | 25ns | 10 ns | 20 ns | 11.2A | 20V | SILICON | DRAIN | 3.7W Ta 107W Tc | 243A | 48 mJ | 60V | N-Channel | 1460pF @ 25V | 12m Ω @ 10A, 10V | 2.3V @ 250μA | 11.2A Ta | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K4C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r1k4c6-datasheets-5273.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 12 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 3.2A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 28.4W Tc | 8A | 26 mJ | N-Channel | 200pF @ 100V | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 3.2A Tc | 9.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y12-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y1255b115-datasheets-0122.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 106W | 1 | 29 ns | 78ns | 63 ns | 100 ns | 61.8A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | N-Channel | 2880pF @ 25V | 11m Ω @ 20A, 10V | 2.15V @ 1mA | 61.8A Tc | 32nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-25MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r825mlc115-datasheets-9857.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | No | e3 | Tin (Sn) | IEC-60134 | YES | SINGLE | GULL WING | 8 | 88W | 1 | R-PSSO-G4 | 16.4 ns | 24.6ns | 13.1 ns | 19.9 ns | 70A | 1.95V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 88W Tc | 536A | 0.00375Ohm | 77 mJ | 25V | N-Channel | 2432pF @ 12.5V | 2.8m Ω @ 25A, 10V | 2.15V @ 1mA | 70A Tc | 37.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDMA86265P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma86265p-datasheets-9889.pdf | 6-WDFN Exposed Pad | 6 | 8 Weeks | 30mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag) | DUAL | NO LEAD | 260 | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 5.8 ns | 2.2ns | 6.4 ns | 8 ns | 1A | 25V | SILICON | DRAIN | SWITCHING | 150V | 2.4W Ta | 1A | 5 pF | P-Channel | 210pF @ 75V | 1.2 Ω @ 1A, 10V | 4V @ 250μA | 1A Ta | 4nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| IPN80R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn80r2k0p7atma1-datasheets-9840.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 6W Tc | 2Ohm | N-Channel | 175pF @ 500V | 2 Ω @ 940mA, 10V | 3.5V @ 50μA | 3A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC042N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc042n03lsgatma1-datasheets-9848.pdf | 8-PowerTDFN | Contains Lead | 8 | 39 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 57W | 1 | Not Qualified | 4.4ns | 93A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 57W Tc | 20A | 372A | 0.0065Ohm | 50 mJ | N-Channel | 3500pF @ 15V | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 20A Ta 93A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr014trlpbf-datasheets-8479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 200mOhm | 8 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 7.7A | 20V | 60V | 2.5W Ta 25W Tc | 200mOhm | N-Channel | 300pF @ 25V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R0-30MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn3r030mlc115-datasheets-9824.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | not_compliant | e3 | Tin (Sn) | IEC-60134 | YES | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 88W Tc | 70A | 498A | 0.00405Ohm | 64 mJ | N-Channel | 2330pF @ 15V | 3.15m Ω @ 25A, 10V | 2.15V @ 1mA | 70A Tc | 34.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RT1A050ZPTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-rt1a050zptr-datasheets-9940.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 96MOhm | 8 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 8 | 10 | 1.25W | 1 | Other Transistors | 12 ns | 95ns | 220 ns | 410 ns | 5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 600mW Ta | 5A | 20A | -12V | P-Channel | 2800pF @ 6V | 26m Ω @ 5A, 4.5V | 1V @ 1mA | 5A Ta | 34nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SI4101DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4101dyt1ge3-datasheets-9954.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6W | 1 | 9ns | 11 ns | 80 ns | 25.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 6W Tc | MS-012AA | 0.006Ohm | -30V | P-Channel | 8190pF @ 15V | 6m Ω @ 15A, 10V | 2.5V @ 250μA | 25.7A Tc | 203nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A08E6QTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a08e6qta-datasheets-9972.pdf | SOT-23-6 | 15 Weeks | No SVHC | 6 | ZXMN6A08 | 1 | Single | SOT-26 | 459pF | 2.6 ns | 2.1ns | 4.6 ns | 12.3 ns | 2.8A | 20V | 60V | 1.1W Ta | 150mOhm | 60V | N-Channel | 459pF @ 40V | 80mOhm @ 4.8A, 10V | 1V @ 250μA | 2.8A Ta | 5.8nC @ 10V | 80 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN4R303NL,L1Q | Toshiba Semiconductor and Storage | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpn4r303nll1q-datasheets-0015.pdf | 8-PowerVDFN | 12 Weeks | 8 | 1 | Single | 8-TSON Advance (3.3x3.3) | 1.4nF | 10.5 ns | 4.5ns | 3.5 ns | 19 ns | 40A | 20V | 30V | 700mW Ta 34W Tc | 6.3mOhm | 30V | N-Channel | 1400pF @ 15V | 4.3mOhm @ 20A, 10V | 2.3V @ 200μA | 40A Tc | 14.8nC @ 10V | 4.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC034N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc034n03lsgatma1-datasheets-9868.pdf | 8-PowerTDFN | Contains Lead | 5 | 39 Weeks | No SVHC | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-N5 | 6.9 ns | 4.8ns | 4.6 ns | 28 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2V | 2.5W Ta 57W Tc | 22A | 400A | 55 mJ | N-Channel | 4300pF @ 15V | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 22A Ta 100A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| ZXMN7A11KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn7a11ktc-datasheets-9733.pdf | 70V | 6.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 130mOhm | 3 | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 8.5W | 1 | R-PSSO-G2 | 1.9 ns | 2ns | 5.8 ns | 11.5 ns | 6.1A | 20V | SILICON | DRAIN | SWITCHING | 2.11W Ta | 4.2A | 70V | N-Channel | 298pF @ 40V | 130m Ω @ 4.4A, 10V | 1V @ 250μA | 4.2A Ta | 7.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD50R280CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd50r280ceatma1-datasheets-7455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 550V | 119W Tc | 42.9A | 0.28Ohm | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 13A Ta | 32.6nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4850EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4850eyt1ge3-datasheets-8598.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SO | 60V | 6.8W Tc | N-Channel | 1250pF @ 25V | 22mOhm @ 6A, 5V | 2.5V @ 250μA | 12A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD3672 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdd3672-datasheets-8747.pdf | 100V | 44A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 5.59mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 28MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11 ns | 59ns | 44 ns | 26 ns | 44A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 135W Tc | TO-252AA | 6.5A | 100V | N-Channel | 1710pF @ 25V | 4 V | 28m Ω @ 44A, 10V | 4V @ 250μA | 6.5A Ta 44A Tc | 36nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| IRF9530NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9530nstrrpbf-datasheets-0029.pdf | -100V | -14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 200mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 3.8W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 15 ns | 58ns | 46 ns | 45 ns | -14A | 20V | 100V | SILICON | DRAIN | SWITCHING | -4V | 3.8W Ta 79W Tc | 190 ns | 56A | 250 mJ | -100V | P-Channel | 760pF @ 25V | -4 V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STL4N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl4n80k5-datasheets-8853.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | Lead Free | 17 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL4 | 1 | Single | NOT SPECIFIED | 38W | 16.5 ns | 15ns | 21 ns | 36 ns | 2.5A | 30V | 38W Tc | 800V | N-Channel | 175pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 2.5A Tc | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR825TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfr825pbf-datasheets-9592.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 1.3Ohm | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 119W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.5 ns | 25ns | 20 ns | 30 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 119W Tc | TO-252AA | 6A | 24A | 500V | N-Channel | 1346pF @ 25V | 1.3 Ω @ 3.7A, 10V | 5V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQD40031EL_GE3 | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40031elge3-datasheets-8857.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 136W Tc | P-Channel | 15000pF @ 25V | 3.2mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 280nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0906NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0906nsatma1-datasheets-7859.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 3.8ns | 63A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 30W Tc | 252A | 0.0064Ohm | 14 mJ | N-Channel | 870pF @ 15V | 4.5m Ω @ 30A, 10V | 2V @ 250μA | 18A Ta 63A Tc | 13nC @ 10V | 4.5V 10V | ±20V |
