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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STD134N4F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std134n4f7ag-datasheets-8867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 7 months ago) | STD13 | 40V | 134W Tc | N-Channel | 2790pF @ 25V | 3.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7855TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7855pbf-datasheets-7234.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 9.4MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8.7 ns | 13ns | 12 ns | 16 ns | 12A | 20V | SILICON | SWITCHING | 2.5W Ta | 97A | 540 mJ | 60V | N-Channel | 1560pF @ 25V | 9.4m Ω @ 12A, 10V | 4.9V @ 100μA | 12A Ta | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOD4S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | yes | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 56.8W | 1 | R-PSSO-G2 | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 56.8W Tc | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8453LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8453lz-datasheets-8681.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | 6.7MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FDD8453 | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 6ns | 5 ns | 37 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 65W Tc | TO-252AA | 50A | 40V | N-Channel | 3515pF @ 20V | 6.7m Ω @ 15A, 10V | 3V @ 250μA | 16.4A Ta 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR624DP-T1-GE3 | Vishay Siliconix | $4.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir624dpt1re3-datasheets-1809.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 52W Tc | N-Channel | 1110pF @ 100V | 60mOhm @ 10A, 10V | 4V @ 250μA | 18.6A Tc | 23nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR616DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir616dpt1ge3-datasheets-8705.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 52W Tc | N-Channel | 1450pF @ 100V | 50.5m Ω @ 10A, 10V | 4V @ 250μA | 20.2A Tc | 28nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD8N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std8n60dm2-datasheets-8713.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STD8N | 600V | 85W Tc | N-Channel | 375pF @ 100V | 600m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 13.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7862TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/sparkfunelectronics-rob09107-datasheets-8054.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 3.3MOhm | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | 16 ns | 19ns | 11 ns | 18 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 350 mJ | 30V | N-Channel | 4090pF @ 15V | 2.35 V | 3.7m Ω @ 20A, 10V | 2.35V @ 100μA | 21A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AON7292 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerWDFN | 5 | 18 Weeks | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | 23A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4.1W Ta 28W Tc | 45A | 0.024Ohm | 10 mJ | N-Channel | 1170pF @ 50V | 24m Ω @ 9A, 10V | 2.6V @ 250μA | 9A Ta 23A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C628NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c628nlt3g-datasheets-9533.pdf | 8-PowerTDFN | 1.1mm | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 11 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 1 | 3.7W | 175°C | 15 ns | 28 ns | 28A | 20V | 3.7W Ta 110W Tc | 60V | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4090DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4090dyt1ge3-datasheets-8780.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 10MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3.5W | 1 | 16 ns | 36 ns | 19.7A | 20V | SILICON | SWITCHING | 2V | 3.5W Ta 7.8W Tc | 100V | N-Channel | 2410pF @ 50V | 10m Ω @ 15A, 10V | 3.3V @ 250μA | 19.7A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI8410DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8410dbt2e1-datasheets-8553.pdf | 4-UFBGA | 21 Weeks | Unknown | 30mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 5.7A | 20V | 850mV | 780mW Ta 1.8W Tc | N-Channel | 620pF @ 10V | 37m Ω @ 1.5A, 4.5V | 850mV @ 250μA | 16nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7458TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7458pbf-datasheets-7057.pdf | 30V | 14A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 8MOhm | 8 | AVALANCHE RATED | No | DUAL | GULL WING | Single | 2.5W | 1 | 10 ns | 4.6ns | 5 ns | 22 ns | 14A | 30V | 30V | SILICON | SWITCHING | 2.5W Ta | 77 ns | 30V | N-Channel | 2410pF @ 15V | 4 V | 8m Ω @ 14A, 16V | 4V @ 250μA | 14A Ta | 59nC @ 10V | 10V 16V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BS170 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf&product=onsemiconductor-bs170-10057218 | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 11 Weeks | 4.535924g | No SVHC | 5Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | Copper, Silver, Tin | No | 5A | 60V | BS170 | Single | 830mW | 1 | TO-92-3 | 24pF | 500mA | 20V | 60V | 2.1V | 830mW Ta | 5Ohm | 60V | N-Channel | 40pF @ 10V | 2.1 V | 5Ohm @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQJA20EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja20ept1ge3-datasheets-8593.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 14 ns | 27 ns | 22.5A | 20V | 200V | 68W Tc | 41mOhm | 200V | N-Channel | 1300pF @ 25V | 50mOhm @ 10A, 10V | 3.5V @ 250μA | 22.5A Tc | 27nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5403DC-T1-GE3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5403dct1ge3-datasheets-8595.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | No SVHC | 30mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 2.5W | 1 | 50 ns | 140ns | 18 ns | 30 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -3V | 2.5W Ta 6.3W Tc | 6A | P-Channel | 1340pF @ 15V | 30m Ω @ 7.2A, 10V | 3V @ 250μA | 6A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFH5302TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfh5302tr2pbf-datasheets-9395.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 2.1MOhm | 8 | EAR99 | No | DUAL | 100W | 1 | FET General Purpose Power | R-PDSO-N5 | 18 ns | 51ns | 18 ns | 22 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 100W Tc | 400A | 30V | N-Channel | 4400pF @ 15V | 1.8 V | 2.1m Ω @ 50A, 10V | 2.35V @ 100μA | 32A Ta 100A Tc | 76nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN1R1-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r125ylc115-datasheets-8668.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 215W | 1 | 35 ns | 48ns | 36 ns | 74 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 215W Tc | MO-235 | 253 mJ | 25V | N-Channel | 5287pF @ 12V | 1.15m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4162DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4162dyt1ge3-datasheets-8297.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 7.9mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 5W | 1 | 20 ns | 15ns | 10 ns | 25 ns | 13.6A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta 5W Tc | 30V | N-Channel | 1155pF @ 15V | 1 V | 7.9m Ω @ 20A, 10V | 3V @ 250μA | 19.3A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQS415ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs415enwt1ge3-datasheets-8295.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 40V | 62.5W Tc | P-Channel | 4825pF @ 25V | 16.1mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 82nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS405EN-T1_GE3 | Vishay Siliconix | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs405enwt1ge3-datasheets-6349.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 12V | 39W Tc | P-Channel | 2650pF @ 6V | 20mOhm @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 75nC @ 8V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C673NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c673nlaft3g-datasheets-3168.pdf | 8-PowerTDFN, 5 Leads | 1.1mm | 5 | 10 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | 3.6W | 1 | 175°C | R-PDSO-F5 | 6 ns | 16 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 46W Tc | 290A | 88 mJ | 60V | N-Channel | 880pF @ 25V | 9.2m Ω @ 25A, 10V | 2V @ 35μA | 50A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIS454DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sis454dnt1ge3-datasheets-8466.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 15ns | 10 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 0.0054Ohm | 45 mJ | N-Channel | 1900pF @ 10V | 3.7m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 53nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQS407ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs407enwt1ge3-datasheets-8401.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 30V | 62.5W Tc | P-Channel | 4572pF @ 20V | 10.8mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD6NF10T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6nf10-datasheets-4107.pdf | 100V | 6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 250mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | GULL WING | 260 | STD6N | 3 | Single | 30 | 30W | 1 | FET General Purpose Power | R-PSSO-G2 | 6 ns | 10ns | 3 ns | 20 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 30W Tc | TO-252AA | 6A | 24A | 200 mJ | 100V | N-Channel | 280pF @ 25V | 250m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIS488DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis488dnt1ge3-datasheets-8490.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.5mOhm | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 22 ns | 65ns | 9 ns | 24 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3.7W Ta 52W Tc | 20 mJ | 40V | N-Channel | 1330pF @ 20V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TP2104K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microchiptechnology-tp2104n3g-datasheets-8312.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | 3 | 5 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | 4 ns | 4ns | 4 ns | 5 ns | 160mA | 20V | SILICON | SWITCHING | 40V | 360mW Ta | 6Ohm | -40V | P-Channel | 60pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 160mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| ZVP2106ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvp2106a-datasheets-8878.pdf&product=diodesincorporated-zvp2106astz-10057172 | -60V | -280mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 12 ns | 280mA | 20V | SILICON | SWITCHING | 60V | 700mW Ta | 0.28A | -60V | P-Channel | 100pF @ 18V | 5 Ω @ 500mA, 10V | 3.5V @ 1mA | 280mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFP250NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp250npbf-datasheets-8330.pdf | 200V | 30A | TO-247-3 | 15.875mm | 20.2946mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 75mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | Single | 30 | 214W | 1 | FET General Purpose Power | 14 ns | 43ns | 33 ns | 41 ns | 30A | 20V | 200V | SILICON | DRAIN | SWITCHING | 214W Tc | TO-247AC | 279 ns | 200V | N-Channel | 2159pF @ 25V | 4 V | 75m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 123nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFR3709ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3709ztrrpbf-datasheets-4051.pdf | 30V | 86A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 6.5MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 79W | 1 | R-PSSO-G2 | 12 ns | 12ns | 3.9 ns | 15 ns | 86A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 79W Tc | TO-252AA | 44 ns | 30V | N-Channel | 2330pF @ 15V | 1.8 V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V |
