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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPCC8A01-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 1.9nF | 2.2ns | 3.4 ns | 21A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 1900pF @ 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 21A Ta | 20nC @ 10V | 9.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J108TU(TE85L) | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | Lead Free | 3 | No | Single | 800mW | 1 | 1.8A | 8V | 20V | 500mW Ta | -20V | P-Channel | 250pF @ 10V | 158m Ω @ 800mA, 4V | 1V @ 1mA | 1.8A Ta | 1.8V 4V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP6448ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb6448ant4g-datasheets-5206.pdf | TO-220-3 | 3 | 3 | yes | e3 | Tin (Sn) | 188W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | 80A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | TO-220AB | 76A | 500 mJ | N-Channel | 4500pF @ 25V | 13m Ω @ 76A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM3K303T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | No | Single | 700mW | 2.9A | 20V | 700mW Ta | 30V | N-Channel | 180pF @ 10V | 83m Ω @ 1.5A, 10V | 2.6V @ 1mA | 2.9A Ta | 3.3nC @ 4V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4959NHT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4959nh1g-datasheets-5251.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 2W | 1 | Not Qualified | R-PSSO-G2 | 58A | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta 52W Tc | 9A | 0.0125Ohm | 112.5 mJ | 30V | N-Channel | 2155pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9A Ta 58A Tc | 44nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTD6416AN-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd6416ant4g-datasheets-1332.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 81MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSIP-T3 | 9.2 ns | 22ns | 20 ns | 24 ns | 17A | 20V | SILICON | DRAIN | 71W Tc | 62A | 100V | N-Channel | 620pF @ 25V | 81m Ω @ 17A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTD4959NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4959nt4g-datasheets-5239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 58A | 30V | 1.3W Ta 52W Tc | N-Channel | 1456pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9A Ta 58A Tc | 25nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4897NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4897nft1g-datasheets-7615.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | No SVHC | 5 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 96.2W | 1 | 26 ns | 24ns | 13 ns | 36 ns | 171A | 20V | SILICON | DRAIN | SWITCHING | 950mW Ta 96.2W Tc | 288A | 0.003Ohm | 30V | N-Channel | 5660pF @ 15V | 2 V | 2m Ω @ 22A, 10V | 2.5V @ 1mA | 17A Ta 171A Tc | 83.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| NVMS10P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 10A | 20V | P-Channel | 10A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4963N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4963n35g-datasheets-5243.pdf | TO-251-3 Stub Leads, IPak | 6.73mm | 6.35mm | 2.38mm | Lead Free | 3 | No SVHC | 9.6MOhm | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 35.7W | 1 | FET General Purpose Powers | 12 ns | 20ns | 3 ns | 14 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 1.45V | 1.1W Ta 35.7W Tc | 30V | N-Channel | 1035pF @ 12V | 9.6m Ω @ 30A, 10V | 2.5V @ 250μA | 8.1A Ta 44A Tc | 16.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NDF08N50ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndf08n50zg-datasheets-5246.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 4 Weeks | 4.535924g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 31W | 1 | FET General Purpose Powers | 13 ns | 23ns | 29 ns | 31 ns | 4.7A | 30V | SILICON | ISOLATED | 35W Tc | TO-220AB | 7.5A | 0.85Ohm | 500V | N-Channel | 1095pF @ 25V | 4.5 V | 850m Ω @ 3.6A, 10V | 4.5V @ 100μA | 8.5A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SSM3K106TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 3 | No | Single | 800mW | 1.2A | 20V | 500mW Ta | 20V | N-Channel | 36pF @ 10V | 310m Ω @ 600mA, 10V | 2.3V @ 100μA | 1.2A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4959NH-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4959nh1g-datasheets-5251.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 58A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.3W Ta 52W Tc | 9A | 0.0125Ohm | 112.5 mJ | N-Channel | 2155pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9A Ta 58A Tc | 44nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD4959N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4959nt4g-datasheets-5239.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 58A | 30V | 1.3W Ta 52W Tc | N-Channel | 1456pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9A Ta 58A Tc | 25nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9GTHP-55PJTR,51 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 28-SOIC (0.295, 7.50mm Width) | 28-SO | 55V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K15FS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SC-75, SOT-416 | 100mA | 30V | 200mW Ta | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCC8001-H(TE12LQM | Toshiba Semiconductor and Storage | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8001hte12lqm-datasheets-5272.pdf | 8-PowerVDFN | 8 | No | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3m Ω @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4946NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4946nt1g-datasheets-8271.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | 100A | SILICON | DRAIN | SWITCHING | 30V | 30V | 890mW Ta 55.5W Tc | 12.7A | N-Channel | 3250pF @ 12V | 3.4m Ω @ 30A, 10V | 2.5V @ 250μA | 12.7A Ta 100A Tc | 53nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD4959NH-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4959nh1g-datasheets-5251.pdf | TO-251-3 Stub Leads, IPak | 3 | 3 | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 58A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.3W Ta 52W Tc | 9A | 0.0125Ohm | 112.5 mJ | N-Channel | 2155pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9A Ta 58A Tc | 44nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTB6410ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp6410ang-datasheets-5723.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 4.535924g | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 188W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 170ns | 190 ns | 120 ns | 76A | 20V | SILICON | DRAIN | 188W Tc | 500 mJ | 100V | N-Channel | 4500pF @ 25V | 4 V | 13m Ω @ 76A, 10V | 4V @ 250μA | 76A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NDD02N60Z-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd02n60z1g-datasheets-5213.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 28 Weeks | 4.8Ohm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 57W | 1 | FET General Purpose Powers | R-PSIP-T3 | 9 ns | 7ns | 7 ns | 15 ns | 2.2A | 30V | SILICON | DRAIN | 57W Tc | 9A | 600V | N-Channel | 274pF @ 25V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2.2A Tc | 10.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| ZXMP6A17N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp6a17n8tc-datasheets-5216.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 2.7A | 20V | SILICON | SWITCHING | 60V | 60V | 1.56W Ta | P-Channel | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA | 2.7A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMFS4898NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntmfs4898nft3g-datasheets-5237.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | No SVHC | 5 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 5 | Single | 73.5W | 1 | 17.6 ns | 23ns | 8.3 ns | 28 ns | 117A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 930mW Ta 73.5W Tc | 234A | 0.0048Ohm | 228 mJ | 30V | N-Channel | 3233pF @ 12V | 3m Ω @ 30A, 10V | 2.5V @ 1mA | 13.2A Ta 117A Tc | 49.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMG8880LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg8880lss13-datasheets-5129.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 73.992255mg | No SVHC | 10MOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | 7.04 ns | 17.52ns | 19.67 ns | 36.13 ns | 11.6A | 20V | SILICON | SWITCHING | 1.43W Ta | 30V | N-Channel | 1289pF @ 15V | 10m Ω @ 11.6A, 10V | 2V @ 250μA | 11.6A Ta | 27.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFH5255TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5255tr2pbf-datasheets-5155.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | 26W | 1 | 8-PQFN (5x6) | 988pF | 7.9 ns | 10.7ns | 3.8 ns | 6.5 ns | 51A | 20V | 25V | 1.8V | 17 ns | 10.9mOhm | 25V | N-Channel | 988pF @ 13V | 1.8 V | 6mOhm @ 15A, 10V | 2.35V @ 25μA | 15A Ta 51A Tc | 14.5nC @ 10V | 6 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRLH5030TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlh5030trpbf-datasheets-5856.pdf | 8-PowerVDFN | 6.1468mm | 990.6μm | 5.15mm | No SVHC | 8 | No | 3.6W | 250W | 1 | PQFN (5x6) Single Die | 5.185nF | 21 ns | 72ns | 41 ns | 41 ns | 100A | 16V | 100V | 2.5V | 48 ns | 9.9mOhm | 100V | N-Channel | 5185pF @ 50V | 2.5 V | 9mOhm @ 50A, 10V | 2.5V @ 150μA | 13A Ta 100A Tc | 94nC @ 10V | 9 mΩ | |||||||||||||||||||||||||||||||||||||||||
| DMG3420U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg3420u7-datasheets-5091.pdf&product=diodesincorporated-dmg3420u7-6867057 | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 5 Weeks | No SVHC | 29mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | Single | 40 | 740mW | 1 | FET General Purpose Powers | 6.5 ns | 8.3ns | 5.3 ns | 21.6 ns | 5.47A | 12V | SILICON | SWITCHING | 950mV | 740mW Ta | 20V | N-Channel | 434.7pF @ 10V | 29m Ω @ 6A, 10V | 1.2V @ 250μA | 5.47A Ta | 5.4nC @ 4.5V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||
| IRFH5015TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh5015trpbf-datasheets-3605.pdf | 8-PowerVDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | No SVHC | 31MOhm | 8 | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 2.3nF | 9.4 ns | 9.7ns | 3.4 ns | 14 ns | 56A | 20V | 150V | 5V | 78 ns | 31mOhm | 150V | N-Channel | 2300pF @ 50V | 5 V | 31mOhm @ 34A, 10V | 5V @ 150μA | 10A Ta 56A Tc | 50nC @ 10V | 31 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRFH5255TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5255tr2pbf-datasheets-5155.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 6MOhm | 8 | EAR99 | No | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 7.9 ns | 10.7ns | 3.8 ns | 6.5 ns | 51A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 26W Tc | 60A | 53 mJ | 25V | N-Channel | 988pF @ 13V | 6m Ω @ 15A, 10V | 2.35V @ 25μA | 15A Ta 51A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFH5004TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5004trpbf-datasheets-4577.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 4.29nF | 13 ns | 13ns | 28 ns | 28 ns | 100A | 20V | 40V | 4V | 48 ns | 2.6mOhm | 40V | N-Channel | 4490pF @ 20V | 4 V | 2.6mOhm @ 50A, 10V | 4V @ 150μA | 28A Ta 100A Tc | 110nC @ 10V | 2.6 mΩ |
