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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7779L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7779l2trpbf-datasheets-0244.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 11MOhm | 8 | No | Single | 125W | 1 | DIRECTFET L8 | 6.66nF | 16 ns | 19ns | 12 ns | 36 ns | 11A | 20V | 150V | 4V | 3.3W Ta 125W Tc | 170 ns | 9mOhm | 150V | N-Channel | 6660pF @ 25V | 4 V | 11mOhm @ 40A, 10V | 5V @ 250μA | 375A Tc | 150nC @ 10V | 11 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHG22N60S-E3 | Vishay Siliconix | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60se3-datasheets-4483.pdf | TO-247-3 | Lead Free | Unknown | 190mOhm | 3 | No | 250W | TO-247AC | 5.62nF | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | 600V | 4V | 250W Tc | 160mOhm | 600V | N-Channel | 5620pF @ 25V | 4 V | 190mOhm @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 190 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHF18N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf18n50ce3-datasheets-4486.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 38W | 1 | FET General Purpose Power | 22 ns | 60ns | 30 ns | 45 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 38W Tc | TO-220AB | 72A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFN39N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn39n90-datasheets-4380.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 68ns | 30 ns | 125 ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 0.2Ohm | 900V | N-Channel | 9200pF @ 25V | 220m Ω @ 500mA, 10V | 5V @ 8mA | 39A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK90N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n30-datasheets-5288.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN230N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn230n10-datasheets-4384.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 8 Weeks | No SVHC | 6mOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 40 ns | 150ns | 60 ns | 112 ns | 230A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 250 ns | 920A | 100V | N-Channel | 19000pF @ 25V | 4 V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 230A Tc | 570nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFN44N80 | IXYS | $31.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n80-datasheets-4415.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 165mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 48ns | 24 ns | 100 ns | 44A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4.5V | 700W Tc | 250 ns | 176A | 4000 mJ | 800V | N-Channel | 10000pF @ 25V | 4.5 V | 165m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTV02N250S | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth02n250-datasheets-2386.pdf | PLUS-220SMD | Lead Free | 2 | 220 | yes | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 57mW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2500V | 83W Tc | 0.2A | 0.5A | 2.5kV | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFV18N90PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | PLUS-220SMD | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH5306TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irfh5306tr2pbf-datasheets-9382.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 8.1MOhm | 8 | EAR99 | HIGH RELIABILITY | Tin | No | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 9 ns | 26ns | 6.1 ns | 9.1 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 26W Tc | 60A | 46 mJ | 30V | N-Channel | 1125pF @ 15V | 8.1m Ω @ 15A, 10V | 2.35V @ 25μA | 15A Ta 44A Tc | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFL44N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n80-datasheets-4432.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | 3 | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSIP-T3 | 35 ns | 48ns | 24 ns | 100 ns | 44A | 20V | SILICON | ISOLATED | SWITCHING | 550W Tc | 176A | 0.165Ohm | 4000 mJ | 800V | N-Channel | 10000pF @ 25V | 165m Ω @ 22A, 10V | 4V @ 8mA | 44A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFV18N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n90p-datasheets-7103.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 18A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 36A | 0.6Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 600m Ω @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7815PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7815trpbf-datasheets-6277.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 3 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-G3 | 8.4 ns | 3.2ns | 8.3 ns | 14 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta | 62 ns | 0.043Ohm | 529 mJ | 150V | N-Channel | 1647pF @ 75V | 4 V | 43m Ω @ 3.1A, 10V | 5V @ 100μA | 5.1A Ta | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| CSD16325Q5C | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | No SVHC | 8 | NRND (Last Updated: 4 weeks ago) | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16325 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 10.5 ns | 16ns | 12 ns | 32 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 25V | 25V | 1.1V | 3.1W Ta | 33A | 200A | 0.0029Ohm | 500 mJ | N-Channel | 4000pF @ 12.5V | 1.1 V | 2m Ω @ 30A, 8V | 1.4V @ 250μA | 33A Ta 100A Tc | 25nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||
| IXFN38N100Q2 | IXYS | $36.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn38n100q2-datasheets-4474.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 28ns | 15 ns | 57 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 890W Tc | 152A | 0.25Ohm | 5000 mJ | 1kV | N-Channel | 7200pF @ 25V | 250m Ω @ 19A, 10V | 5V @ 8mA | 38A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFV12N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSIP-T3 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH32N50Q | IXYS | $3.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | TO-247-3 | Lead Free | 3 | 160mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 416W | 1 | FET General Purpose Power | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 500V | N-Channel | 4925pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFC14N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc14n80p-datasheets-4347.pdf | ISOPLUS220™ | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSIP-T3 | 75 ns | 8A | SILICON | ISOLATED | SWITCHING | 130W Tc | 8A | 40A | 0.77Ohm | 1200 mJ | 800V | N-Channel | 3900pF @ 25V | 770m Ω @ 7A, 10V | 5.5V @ 4mA | 8A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH30N40Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfh30n40q-datasheets-4353.pdf | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 160mOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 35ns | 12 ns | 51 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 120A | 1.5 mJ | 400V | N-Channel | 3300pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFN280N085 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-ixfn280n085-datasheets-4354.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 390mOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 95ns | 33 ns | 200 ns | 280A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 85V | N-Channel | 19000pF @ 25V | 4.4m Ω @ 100A, 10V | 4V @ 8mA | 280A Tc | 580nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK150N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx150n15-datasheets-8690.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 60ns | 45 ns | 110 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600A | 0.0125Ohm | 150V | N-Channel | 9100pF @ 25V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXCY01N90E | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH28N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh28n50q-datasheets-5608.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 20ns | 12 ns | 51 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 112A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 200m Ω @ 14A, 10V | 4.5V @ 4mA | 28A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN340N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/ixys-ixfn340n07-datasheets-4362.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 Weeks | 4MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 95ns | 33 ns | 200 ns | 340A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 70V | N-Channel | 12200pF @ 25V | 4m Ω @ 100A, 10V | 4V @ 8mA | 340A Tc | 490nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK26N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfx26n60q-datasheets-7450.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 32ns | 16 ns | 80 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 104A | 0.25Ohm | 1500 mJ | 600V | N-Channel | 5100pF @ 25V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFN66N50Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfn66n50q2-datasheets-4366.pdf | SOT-227-4, miniBLOC | 4 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 16ns | 12 ns | 60 ns | 66A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 6800pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 199nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFK120N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n25-datasheets-0756.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 38ns | 35 ns | 175 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 0.022Ohm | 250V | N-Channel | 9400pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN55N50 | IXYS | $36.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | SOT-227-4, miniBLOC | Lead Free | 4 | 6 Weeks | 46g | No SVHC | 80mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 60ns | 45 ns | 120 ns | 55A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4.5V | 625W Tc | 250 ns | 220A | 500V | N-Channel | 9400pF @ 25V | 4.5 V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF7769L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7769l2trpbf-datasheets-3275.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 3.5MOhm | 11 | No | Single | 125W | 1 | DIRECTFET L8 | 11.56nF | 44 ns | 32ns | 41 ns | 92 ns | 20A | 20V | 100V | 2.7V | 3.3W Ta 125W Tc | 2.8mOhm | 100V | N-Channel | 11560pF @ 25V | 2.7 V | 3.5mOhm @ 74A, 10V | 4V @ 250μA | 375A Tc | 300nC @ 10V | 3.5 mΩ | 10V | ±20V |
