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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPS02N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-sps02n60c3-datasheets-8342.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | Unknown | 3 | no | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | 6 ns | 3ns | 12 ns | 68 ns | 1.8A | 20V | 600V | 650V | SILICON | 25W Tc | 5.4A | 3Ohm | 50 mJ | 650V | N-Channel | 200pF @ 25V | 3 V | 3 Ω @ 1.1A, 10V | 3.9V @ 80μA | 1.8A Tc | 12.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDZ197PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdz197pz-datasheets-8345.pdf | 6-UFBGA, WLCSP | 1mm | 650μm | 1.5mm | 6 | 54mg | No SVHC | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | Single | 1.9W | 1 | Other Transistors | 5.8 ns | 5.9ns | 280 ns | 311 ns | -3.8A | 8V | SILICON | SWITCHING | 20V | 1.9W Ta | 225 pF | -20V | P-Channel | 1570pF @ 10V | -500 mV | 64m Ω @ 2A, 4.5V | 1V @ 250μA | 3.8A Ta | 25nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| IRFH7932TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-irfh7932trpbf-datasheets-6156.pdf | 8-PowerVDFN | 5mm | 939.8μm | 5.1054mm | Lead Free | No SVHC | 3.3MOhm | 8 | No | Single | 3.1W | PQFN (5x6) Single Die | 4.27nF | 20 ns | 48ns | 20 ns | 23 ns | 24A | 20V | 30V | 1.8V | 3.4W Ta | 32 ns | 3.3mOhm | 30V | N-Channel | 4270pF @ 15V | 1.8 V | 3.3mOhm @ 25A, 10V | 2.35V @ 100μA | 24A Ta 104A Tc | 51nC @ 4.5V | 3.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH7936TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh7936tr2pbf-datasheets-8369.pdf | 8-PowerTDFN | 5.2324mm | 950μm | 5mm | Lead Free | No SVHC | 4.8MOhm | 8 | No | 3.1W | Single | 3.1W | 8-PQFN (5x6) | 2.36nF | 17 ns | 12ns | 7 ns | 19 ns | 24A | 20V | 30V | 21 ns | 4.8mOhm | 30V | N-Channel | 2360pF @ 15V | 1.8 V | 4.8mOhm @ 20A, 10V | 2.35V @ 50μA | 20A Ta 54A Tc | 26nC @ 4.5V | 4.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS5615TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs5615pbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | 10 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.9 ns | 23.1ns | 13.1 ns | 17.2 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 5V | 144W Tc | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFH7921TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7921tr2pbf-datasheets-8395.pdf | 8-PowerVDFN | 6mm | 950μm | 5mm | Lead Free | No SVHC | 8.5MOhm | 8 | No | Single | 3.1W | 1 | PQFN (5x6) Single Die | 1.21nF | 12 ns | 7.6ns | 4.7 ns | 14 ns | 15A | 20V | 30V | 1.8V | 3.1W Ta | 18 ns | 8.5mOhm | 30V | N-Channel | 1210pF @ 15V | 1.8 V | 8.5mOhm @ 15A, 10V | 2.35V @ 25μA | 15A Ta 34A Tc | 14nC @ 4.5V | 8.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFE24N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe23n100-datasheets-1164.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 500W Tc | 96A | 0.39Ohm | 3000 mJ | 1kV | N-Channel | 7000pF @ 25V | 390m Ω @ 12A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFC60N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfc60n20-datasheets-8413.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 63ns | 26 ns | 85 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 240A | 1000 mJ | 200V | N-Channel | 5200pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 4mA | 60A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6729MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6729mtr1pbf-datasheets-8285.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | No SVHC | 7 | No | Single | 2.8W | 1 | DIRECTFET™ MX | 6.03nF | 22 ns | 37ns | 15 ns | 20 ns | 31A | 20V | 30V | 1.8V | 2.8W Ta 104W Tc | 2.7mOhm | 30V | N-Channel | 6030pF @ 15V | 1.8 V | 1.8mOhm @ 31A, 10V | 2.35V @ 150μA | 31A Ta 190A Tc | 63nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLS4030PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trlpbf-datasheets-9912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | No SVHC | 4.3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 74 ns | 330ns | 170 ns | 110 ns | 190A | 16V | 100V | SILICON | SWITCHING | 2.5V | 370W Tc | 100V | N-Channel | 11360pF @ 50V | 2.5 V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFB4321GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4321gpbf-datasheets-8180.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | No SVHC | 3 | Tin | No | Single | 330W | 1 | TO-220AB | 4.46nF | 18 ns | 60ns | 35 ns | 25 ns | 83A | 30V | 150V | 5V | 330W Tc | 15mOhm | 150V | N-Channel | 4460pF @ 25V | 5 V | 15mOhm @ 33A, 10V | 5V @ 250μA | 83A Tc | 110nC @ 10V | 15 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRFSL3004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfs3004trlpbf-datasheets-2716.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | 3 | EAR99 | No | Single | 380W | 1 | 23 ns | 220ns | 130 ns | 90 ns | 340A | 20V | SILICON | DRAIN | SWITCHING | 380W Tc | 40V | N-Channel | 9200pF @ 25V | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 195A Ta | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4020PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4020trlpbf-datasheets-5008.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 4.83mm | 15.01mm | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 100W | 1 | FET General Purpose Power | 7.8 ns | 12ns | 6.3 ns | 16 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 52A | 0.105Ohm | 94 mJ | 200V | N-Channel | 1200pF @ 50V | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 18A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF1324LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1324spbf-datasheets-8050.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | No SVHC | 3 | No | 300W | TO-262 | 7.59nF | 17 ns | 190ns | 120 ns | 83 ns | 340A | 20V | 24V | 300W Tc | 1.65mOhm | 24V | N-Channel | 7590pF @ 24V | 4 V | 1.65mOhm @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 1.65 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH3702TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfh3702trpbf-datasheets-6347.pdf | 8-PowerVDFN | 2.9972mm | 939.8μm | 2.9972mm | Lead Free | No SVHC | 7.1MOhm | 8 | No | 2.8W | Single | 2.8W | 1 | 8-PQFN (3x3) | 1.51nF | 9.6 ns | 15ns | 5.8 ns | 11 ns | 16A | 20V | 30V | 26 ns | 7.1mOhm | 30V | N-Channel | 1510pF @ 15V | 1.8 V | 7.1mOhm @ 16A, 10V | 2.35V @ 25μA | 16A Ta 42A Tc | 14nC @ 4.5V | 7.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4115PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-irfs4115trlpbf-datasheets-3250.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12.1MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | 18 ns | 73ns | 39 ns | 41 ns | 99A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 150V | N-Channel | 5270pF @ 50V | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 195A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFS4020PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs4020trlpbf-datasheets-5008.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 4.826mm | 2 | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7.8 ns | 12ns | 6.3 ns | 16 ns | 18A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4.9V | 100W Tc | 120 ns | 52A | 0.105Ohm | 94 mJ | 200V | N-Channel | 1200pF @ 50V | 4.9 V | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 18A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFB3307ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb3307zgpbf-datasheets-8247.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 5.8MOhm | 3 | No | Single | 230W | 1 | TO-220AB | 4.75nF | 15 ns | 64ns | 65 ns | 38 ns | 120A | 20V | 75V | 230W Tc | 5.8mOhm | 75V | N-Channel | 4750pF @ 50V | 5.8mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 110nC @ 10V | 5.8 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2LH5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2lh5atma4-datasheets-3553.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.0065Ohm | 700 mJ | N-Channel | 5000pF @ 25V | 5m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1324STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1324spbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | 300W | D2PAK | 7.59nF | 17 ns | 190ns | 120 ns | 83 ns | 195A | 20V | 24V | 300W Tc | 24V | N-Channel | 7590pF @ 24V | 1.65mOhm @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 1.65 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6717MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf6717mtrpbf-datasheets-0276.pdf | DirectFET™ Isometric MX | 5.45mm | 533.4μm | 5.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.25MOhm | 7 | EAR99 | No | e3 | MATTE TIN | BOTTOM | 260 | Single | 40 | 96W | 1 | R-XBCC-N3 | 25 ns | 37ns | 15 ns | 19 ns | 38A | 20V | 25V | SILICON | DRAIN | SWITCHING | 1.8V | 2.8W Ta 96W Tc | 41 ns | 300A | 290 mJ | 25V | N-Channel | 6750pF @ 13V | 1.8 V | 1.25m Ω @ 38A, 10V | 2.35V @ 150μA | 38A Ta 200A Tc | 69nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFS5615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs5615pbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | 3 | No | 144W | 1 | D2PAK | 1.75nF | 8.9 ns | 23.1ns | 13.1 ns | 17.2 ns | 33A | 20V | 150V | 144W Tc | 42mOhm | 150V | N-Channel | 1750pF @ 50V | 42mOhm @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 42 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPP15P10PLGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp15p10plghksa1-datasheets-8149.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | compliant | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 128W Tc | TO-220AB | 15A | 60A | 0.2Ohm | 230 mJ | P-Channel | 1490pF @ 25V | 200m Ω @ 11.3A, 10V | 2V @ 1.54mA | 15A Tc | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4615trlpbf-datasheets-9557.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 34.5MOhm | 3 | No | 144W | TO-262 | 1.75nF | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | 150V | 150V | 3V | 144W Tc | 42mOhm | 150V | N-Channel | 1750pF @ 50V | 3 V | 42mOhm @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 42 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLS3034-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irls3034trl7pp-datasheets-2501.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 6 | 12 Weeks | No SVHC | 1.4MOhm | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 71 ns | 590ns | 200 ns | 94 ns | 380A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 380W Tc | 240A | 1540A | 250 mJ | 40V | N-Channel | 10990pF @ 40V | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 240A Tc | 180nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF2804SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2804strlpbf-datasheets-9077.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | 40V | 300W Tc | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6218SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6218strlpbf-datasheets-2352.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 250W | 1 | Other Transistors | R-PSSO-G2 | 21 ns | 70ns | 30 ns | 35 ns | -150A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 250W Tc | 27A | P-Channel | 2210pF @ 25V | 150m Ω @ 16A, 10V | 5V @ 250μA | 27A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS4115PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4115trlpbf-datasheets-3250.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 12.1MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 73ns | 39 ns | 41 ns | 99A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 375W Tc | 150V | N-Channel | 5270pF @ 50V | 5 V | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 195A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NDB6020P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/onsemiconductor-ndp6020p-datasheets-2437.pdf | -20V | -24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 11.33mm | 4.83mm | Lead Free | 2 | 1.31247g | No SVHC | 50mOhm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | GULL WING | Single | 60W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 27ns | 70 ns | 120 ns | 24A | 8V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 60W Tc | 70A | -20V | P-Channel | 1590pF @ 10V | 50m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 35nC @ 5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| IPW60R250CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipw60r250cp-datasheets-8092.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e3 | TIN | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 104W | 1 | FET General Purpose Power | Not Qualified | 12A | 20V | SILICON | SWITCHING | 650V | 104W Tc | 40A | 0.25Ohm | 600V | N-Channel | 1200pF @ 100V | 3 V | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V |
