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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS4115PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4115trlpbf-datasheets-3250.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 12.1MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18 ns | 73ns | 39 ns | 41 ns | 99A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 375W Tc | 150V | N-Channel | 5270pF @ 50V | 5 V | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 195A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NDB6020P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/onsemiconductor-ndp6020p-datasheets-2437.pdf | -20V | -24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 11.33mm | 4.83mm | Lead Free | 2 | 1.31247g | No SVHC | 50mOhm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | GULL WING | Single | 60W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 27ns | 70 ns | 120 ns | 24A | 8V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 60W Tc | 70A | -20V | P-Channel | 1590pF @ 10V | 50m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 35nC @ 5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||
| IPW60R250CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipw60r250cp-datasheets-8092.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e3 | TIN | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 104W | 1 | FET General Purpose Power | Not Qualified | 12A | 20V | SILICON | SWITCHING | 650V | 104W Tc | 40A | 0.25Ohm | 600V | N-Channel | 1200pF @ 100V | 3 V | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPW15N60CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw15n60cfdfksa1-datasheets-8104.pdf | TO-247-3 | 3 | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 156W Tc | TO-247AD | 13.4A | 33A | 0.33Ohm | 460 mJ | N-Channel | 1820pF @ 25V | 330m Ω @ 9.4A, 10V | 5V @ 750μA | 13.4A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS4615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4615trlpbf-datasheets-9557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 144W Tc | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 5 V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR3636PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3636trpbf-datasheets-8735.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | No SVHC | 6.8MOhm | 3 | EAR99 | No | Single | 143W | 1 | 45 ns | 216ns | 96 ns | 43 ns | 99A | 16V | 2.5V | 143W Tc | 60V | N-Channel | 3779pF @ 50V | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 50A Tc | 49nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPP15N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp15n60cfdxksa1-datasheets-2329.pdf | TO-220-3 | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 156W Tc | TO-220AB | 13.4A | 33A | 0.33Ohm | 460 mJ | N-Channel | 1820pF @ 25V | 330m Ω @ 9.4A, 10V | 5V @ 750μA | 13.4A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPP07N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp07n60cfdhksa1-datasheets-8003.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | No | Not Halogen Free | 3 | 25ns | 9 ns | 36 ns | 6.6A | 600V | 650V | 83W Tc | N-Channel | 790pF @ 25V | 700m Ω @ 4.6A, 10V | 5V @ 300μA | 6.6A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP08P06PHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spp08p06phxksa1-datasheets-8008.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 42W | 1 | Not Qualified | 16 ns | 46ns | 14 ns | 48 ns | 8.8A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 42W Tc | TO-220AB | 70 mJ | P-Channel | 420pF @ 25V | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 8.8A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPP15P10PGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd15p10pgbtma1-datasheets-7159.pdf | TO-220-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 128W | 1 | R-PSFM-T3 | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 128W Tc | TO-220AB | 60A | 0.24Ohm | 230 mJ | P-Channel | 1280pF @ 25V | 240m Ω @ 10.6A, 10V | 2.1V @ 1.54mA | 15A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8734PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf8734pbf-datasheets-8017.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 16ns | 8 ns | 15 ns | 21A | 20V | SILICON | SWITCHING | 2.5W Ta | 30 ns | 0.0035Ohm | 30V | N-Channel | 3175pF @ 15V | 1.8 V | 3.5m Ω @ 21A, 10V | 2.35V @ 50μA | 21A Ta | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFS3004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfs3004trlpbf-datasheets-2716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | Single | 30 | 380W | 1 | R-PSSO-G2 | 23 ns | 220ns | 130 ns | 90 ns | 340A | 20V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | 40V | N-Channel | 9200pF @ 25V | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 195A Ta | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS4115-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4115trl7pp-datasheets-6451.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 6 | 13 Weeks | No SVHC | 11.8MOhm | 7 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 18 ns | 50ns | 23 ns | 37 ns | 105A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 380W Tc | 420A | 230 mJ | 150V | N-Channel | 5320pF @ 50V | 5 V | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 105A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF1324SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1324spbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | No SVHC | 3 | No | 300W | 1 | D2PAK | 7.59nF | 17 ns | 190ns | 120 ns | 83 ns | 340A | 20V | 24V | 24V | 4V | 300W Tc | 1.65mOhm | 24V | N-Channel | 7590pF @ 24V | 4 V | 1.65mOhm @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 1.65 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFSL23N20D102P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb23n20dpbf-datasheets-4027.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 200V | 3.8W Ta 170W Tc | N-Channel | 1960pF @ 25V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS50R520CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ips50r520cp-datasheets-7973.pdf | TO-251-3 Stub Leads, IPak | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 66W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 14ns | 17 ns | 80 ns | 7.1A | 20V | 500V | SILICON | 550V | 66W Tc | 0.52Ohm | 500V | N-Channel | 680pF @ 100V | 3 V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPS01N60C3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-sps01n60c3-datasheets-7978.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | Unknown | 3 | yes | EAR99 | AVALANCHE RATED | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 11W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 25ns | 30 ns | 55 ns | 800mA | 30V | 650V | SILICON | 11W Tc | TO-251AA | 0.8A | 1.6A | 6Ohm | 20 mJ | 650V | N-Channel | 100pF @ 25V | 3 V | 6 Ω @ 500mA, 10V | 3.9V @ 250μA | 800mA Tc | 5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPS03N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sps03n60c3bkma1-datasheets-7982.pdf | TO-251-3 Stub Leads, IPak | 3 | yes | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 38W Tc | TO-251AA | 3.2A | 9.6A | 100 mJ | N-Channel | 400pF @ 25V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPS04N60C3BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-sps04n60c3bkma1-datasheets-7986.pdf | TO-251-3 Stub Leads, IPak | Contains Lead | 3 | yes | No | e3 | Tin (Sn) | Not Halogen Free | SINGLE | 3 | 50W | 1 | R-PSIP-T3 | 6 ns | 2.5ns | 9.5 ns | 58.5 ns | 4.5A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 50W Tc | 0.95Ohm | N-Channel | 490pF @ 25V | 950m Ω @ 2.8A, 10V | 3.9V @ 200μA | 4.5A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPP15N65C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-220-3 | 3 | no | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 156W Tc | TO-220AB | 15A | 45A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPP24N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp24n60cfdhksa1-datasheets-7994.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | No | Not Halogen Free | SINGLE | 3 | 1 | 50 ns | 24ns | 9 ns | 100 ns | 21.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 240W Tc | TO-220AB | 55A | 0.185Ohm | 780 mJ | N-Channel | 3160pF @ 25V | 185m Ω @ 15.4A, 10V | 5V @ 1.2mA | 21.7A Tc | 143nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPI11N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi11n60cfdhksa1-datasheets-7921.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 125W Tc | 11A | 28A | 0.44Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 440m Ω @ 7A, 10V | 5V @ 500μA | 11A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF540ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf540zspbf-datasheets-8683.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | 36A | 140A | 0.0265Ohm | 120 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L06AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l06atma1-datasheets-4279.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Halogen Free | NO | NOT SPECIFIED | Single | NOT SPECIFIED | 250W | 1 | 11 ns | 21ns | 20 ns | 60 ns | 80A | 20V | 55V | SILICON | 250W Tc | TO-220AB | 0.0081Ohm | 55V | N-Channel | 3800pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP47N10SL26AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/infineontechnologies-ipb47n10sl26atma1-datasheets-5437.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 175W Tc | TO-220AB | 47A | 188A | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R350CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw50r350cpfksa1-datasheets-7946.pdf | TO-247-3 | 3 | 8 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 550V | 500V | 89W Tc | TO-247AD | 10A | 22A | 0.35Ohm | 246 mJ | N-Channel | 1020pF @ 100V | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 10A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L09AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l09atma1-datasheets-4143.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 190W Tc | TO-220AB | 80A | 320A | 0.0113Ohm | 370 mJ | N-Channel | 2620pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002NL6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sn7002ne6433-datasheets-1858.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 60V | 360mW Ta | N-Channel | 45pF @ 25V | 5Ohm @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R199CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw50r199cpfksa1-datasheets-7960.pdf | TO-247-3 | 3 | 8 Weeks | yes | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 550V | 500V | 139W Tc | 17A | 40A | 0.199Ohm | 436 mJ | N-Channel | 1800pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2H5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2h5atma1-datasheets-4096.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.0055Ohm | 700 mJ | N-Channel | 4400pF @ 25V | 5.5m Ω @ 80A, 10V | 4V @ 230μA | 80A Tc | 155nC @ 10V | 10V | ±20V |
