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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFH30N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n50-datasheets-4425.pdf | TO-247-3 | 3 | 6g | No SVHC | 160mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 42ns | 26 ns | 110 ns | 30A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 360W Tc | 250 ns | 120A | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 4 V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH15N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | No SVHC | 700mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 15A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 360W Tc | 60A | 1kV | N-Channel | 4500pF @ 25V | 4.5 V | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 15A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH60N25Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFE36N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe34n100-datasheets-1100.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 82ns | 40 ns | 150 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 580W Tc | 1kV | N-Channel | 15000pF @ 25V | 240m Ω @ 18A, 10V | 5.5V @ 8mA | 33A Tc | 455nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH150N17T | IXYS | $4.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n17t-datasheets-8516.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830mW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 30ns | 30 ns | 150A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 400A | 0.012Ohm | 1500 mJ | 175V | N-Channel | 9800pF @ 25V | 12m Ω @ 75A, 10V | 5V @ 3mA | 150A Tc | 155nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||
| IXFH14N100 | IXYS | $11.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n100-datasheets-8518.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFH80N15Q | IXYS | $4.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLS3034PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls3034trlpbf-datasheets-6203.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | No SVHC | 1.7MOhm | 3 | EAR99 | No | Single | 375W | 1 | 65 ns | 827ns | 355 ns | 97 ns | 343A | 20V | 2.5V | 375W Tc | 40V | N-Channel | 10315pF @ 25V | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH70N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n15-datasheets-4193.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 52ns | 23 ns | 70 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 280A | 0.028Ohm | 1000 mJ | 150V | N-Channel | 3600pF @ 25V | 28m Ω @ 35A, 10V | 4V @ 4mA | 70A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLS4030-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trl7pp-datasheets-6230.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.3378mm | 4.3434mm | 6.85mm | Lead Free | No SVHC | 3.9MOhm | 7 | EAR99 | No | Single | 370W | 1 | 53 ns | 160ns | 87 ns | 110 ns | 190A | 16V | 100V | 2.5V | 370W Tc | 100V | N-Channel | 11490pF @ 50V | 2.5 V | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 190A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRL3714ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714zspbf-datasheets-8490.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | Single | 35W | 1 | D2PAK | 550pF | 6 ns | 13ns | 5 ns | 10 ns | 36A | 20V | 20V | 35W Tc | 16mOhm | 20V | N-Channel | 550pF @ 10V | 16mOhm @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFE180N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe180n10-datasheets-8423.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 90ns | 65 ns | 140 ns | 176A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 720A | 0.008Ohm | 3000 mJ | 100V | N-Channel | 9100pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 176A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFR5505GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irfr5505gtrpbf-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | Lead Free | 110MOhm | 3 | No | Single | 57W | 1 | D-Pak | 650pF | 12 ns | 28ns | 16 ns | 20 ns | 18A | 20V | 55V | 57W Tc | 110mOhm | -55V | P-Channel | 650pF @ 25V | 110mOhm @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 110 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFP250 | IXYS | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp250-datasheets-8428.pdf | TO-247-3 | Lead Free | 3 | 3 | EAR99 | 3 | Single | 190W | 1 | FET General Purpose Power | Not Qualified | 130ns | 98 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-247AD | 120A | 0.085Ohm | 200V | N-Channel | 2970pF @ 25V | 85m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFC40N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | ISOPLUS220™ | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 36A | 160A | 0.08Ohm | 1000 mJ | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC80N08 | IXYS | $5.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc80n08-datasheets-8450.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 75A | 0.009Ohm | 1000 mJ | 80V | N-Channel | 4800pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFC26N50 | IXYS | $18.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50-datasheets-8452.pdf | ISOPLUS220™ | Lead Free | 3 | 200mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 33ns | 30 ns | 65 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 92A | 500V | N-Channel | 4200pF @ 25V | 200m Ω @ 13A, 10V | 4V @ 4mA | 23A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFE180N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe180n20-datasheets-8464.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | Not Qualified | 85ns | 36 ns | 180 ns | 158A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 720A | 0.012Ohm | 200V | N-Channel | 14400pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 8mA | 158A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFC80N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfc80n10-datasheets-8466.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 75ns | 31 ns | 95 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 0.0125Ohm | 2500 mJ | 100V | N-Channel | 4800pF @ 25V | 12.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFC15N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc15n80q-datasheets-8468.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 27ns | 16 ns | 53 ns | 13A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 60A | 0.65Ohm | 1000 mJ | 800V | N-Channel | 4300pF @ 25V | 650m Ω @ 500mA, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFE39N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe39n90-datasheets-8470.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 68ns | 30 ns | 125 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 580W Tc | 0.22Ohm | 900V | N-Channel | 13400pF @ 25V | 220m Ω @ 19.5A, 10V | 5V @ 8mA | 34A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH74N20 | IXYS | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20-datasheets-8472.pdf | TO-247-3 | Lead Free | 3 | 30MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 26 ns | 120 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 296A | 200V | N-Channel | 5400pF @ 25V | 30m Ω @ 500mA, 10V | 4V @ 4mA | 74A Tc | 280nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFG55N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfg55n50-datasheets-8474.pdf | ISO264™ | 3 | 30 Weeks | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 120 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 220A | 0.09Ohm | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFP470 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp470-datasheets-8476.pdf | TO-3P-3 Full Pack | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFE24N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe23n100-datasheets-1164.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 500W Tc | 96A | 0.39Ohm | 3000 mJ | 1kV | N-Channel | 7000pF @ 25V | 390m Ω @ 12A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFC60N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfc60n20-datasheets-8413.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 63ns | 26 ns | 85 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 240A | 1000 mJ | 200V | N-Channel | 5200pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 4mA | 60A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLS3036PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irls3036trlpbf-datasheets-2628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 2.4MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G2 | 66 ns | 220ns | 110 ns | 110 ns | 270A | 16V | 60V | SILICON | DRAIN | SWITCHING | 2.5V | 380W Tc | 290 mJ | 60V | N-Channel | 11210pF @ 50V | 2.5 V | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| IRL3715ZCSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5053TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5053trpbf-datasheets-4270.pdf | 8-PowerVDFN | 5.9944mm | 939.8μm | 5mm | Lead Free | 8 | No | 3.1W | Single | 3.1W | 1 | PQFN (5x6) Single Die | 1.51nF | 8.6 ns | 7.5ns | 4.1 ns | 18 ns | 9.3A | 20V | 100V | 18mOhm | 100V | N-Channel | 1510pF @ 50V | 18mOhm @ 9.3A, 10V | 4.9V @ 100μA | 9.3A Ta 46A Tc | 36nC @ 10V | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SPI20N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi20n60cfdhksa1-datasheets-8326.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | No | 8541.29.00.95 | SINGLE | 3 | 1 | 12 ns | 15ns | 6.4 ns | 59 ns | 20.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 208W Tc | 52A | 0.22Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 220m Ω @ 13.1A, 10V | 5V @ 1mA | 20.7A Tc | 124nC @ 10V | 10V | ±20V |
