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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR3910CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3910cpbf-datasheets-7446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | 79W Tc | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3418PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80V | 3.8W Ta 140W Tc | N-Channel | 3510pF @ 25V | 14mOhm @ 18A, 10V | 5.5V @ 250μA | 70A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7492PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7492pbf-datasheets-7454.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 4.05mm | Lead Free | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 1.82nF | 15 ns | 13ns | 14 ns | 27 ns | 3.7A | 20V | 200V | 200V | 2.5V | 2.5W Ta | 100 ns | 79mOhm | 200V | N-Channel | 1820pF @ 25V | 2.5 V | 79mOhm @ 2.2A, 10V | 2.5V @ 250μA | 3.7A Ta | 59nC @ 10V | 79 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF3707STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707pbf-datasheets-8617.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | Single | 87W | 1 | 78ns | 3.3 ns | 11.8 ns | 62A | 20V | 87W Tc | 30V | N-Channel | 1990pF @ 15V | 12.5m Ω @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7809PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | 28V | N-Channel | 1V @ 250μA | 14.5A Ta | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4310PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfb4310pbf-datasheets-0629.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 75A | 550A | 0.007Ohm | 980 mJ | N-Channel | 7670pF @ 50V | 7m Ω @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR9120NCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | P-Channel | 350pF @ 25V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Ta | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7601PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7601trpbf-datasheets-6582.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | HIGH RELIABILITY | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.8W Ta | 5.7A | 30A | 0.035Ohm | N-Channel | 650pF @ 15V | 35m Ω @ 3.8A, 4.5V | 700mV @ 250μA | 5.7A Ta | 22nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| NTD4854NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4854n1g-datasheets-6918.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 17.6ns | 8.5 ns | 41 ns | 128A | 20V | SILICON | DRAIN | SWITCHING | 1.43W Ta 93.75W Tc | 15.7A | 225A | 338 mJ | 25V | N-Channel | 4600pF @ 12V | 3.6m Ω @ 30A, 10V | 2.5V @ 250μA | 15.7A Ta 128A Tc | 49.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF8714PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8714trpbf-datasheets-8404.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 8.7MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 10 ns | 9.9ns | 5 ns | 11 ns | 14A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 21 ns | 65 mJ | 30V | N-Channel | 1020pF @ 15V | 1.8 V | 8.7m Ω @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IRFU3709Z-701P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3709z-datasheets-6574.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30V | 79W Tc | N-Channel | 2330pF @ 15V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR540ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr540ztrpbf-datasheets-0898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Lead Free | 19 Weeks | No SVHC | 3 | EAR99 | No | Single | 91W | 1 | 14 ns | 42ns | 34 ns | 43 ns | 35A | 20V | 100V | 4V | 91W Tc | 48 ns | 100V | N-Channel | 1690pF @ 25V | 4 V | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTD4809N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4809nt4g-datasheets-5646.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 2W | 1 | 22.7ns | 2.8 ns | 25.3 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 1.4W Ta 52W Tc | 9A | 30V | N-Channel | 1456pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.6A Ta 58A Tc | 13nC @ 4.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR12N25DCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 250V | 144W Tc | N-Channel | 810pF @ 25V | 260m Ω @ 8.4A, 10V | 5V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7833CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 140W Tc | N-Channel | 140A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8743PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlr8743trpbf-datasheets-6686.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 3.1MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 35ns | 17 ns | 21 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 135W Tc | TO-252AA | 640A | 250 mJ | 30V | N-Channel | 4880pF @ 15V | 1.9 V | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 160A Tc | 59nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| IRF7494PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7494pbf-datasheets-7371.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 44MOhm | 8 | No | 3W | 1 | 8-SO | 1.75nF | 9 ns | 10ns | 14 ns | 29 ns | 5.2A | 20V | 150V | 150V | 4V | 2.5W Ta | 44mOhm | 150V | N-Channel | 1783pF @ 25V | 4 V | 44mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Ta | 53nC @ 10V | 44 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTD4855N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4855nt4g-datasheets-6910.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 2.24W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 16.52ns | 4.35 ns | 32.02 ns | 17.7A | 20V | SILICON | DRAIN | SWITCHING | 1.35W Ta 66.7W Tc | 98A | 197A | 0.006Ohm | 220 mJ | 25V | N-Channel | 2950pF @ 12V | 4.3m Ω @ 30A, 10V | 2.5V @ 250μA | 14A Ta 98A Tc | 32.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF7853PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7853trpbf-datasheets-0120.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 18MOhm | 8 | EAR99 | No | Single | 2.5W | 1 | 13 ns | 6.6ns | 6 ns | 26 ns | 8.3A | 20V | 100V | 4.9V | 2.5W Ta | 68 ns | 100V | N-Channel | 1640pF @ 25V | 4.9 V | 18m Ω @ 8.3A, 10V | 4.9V @ 100μA | 8.3A Ta | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR3704ZCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | N-Channel | 1190pF @ 10V | 8.4m Ω @ 15A, 10V | 60A Ta | 14nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4813N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4813n1g-datasheets-6936.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 1.94W | 1 | FET General Purpose Power | 10.5 ns | 19.3ns | 19.3 ns | 10.1 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.27W Ta 35.3W Tc | 7.6A | 90A | 0.024Ohm | 72 mJ | 30V | N-Channel | 860pF @ 12V | 13m Ω @ 30A, 10V | 2.5V @ 250μA | 7.6A Ta 40A Tc | 7.9nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||
| NTD4856N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntd4856n35g-datasheets-6905.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NO | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 2.14W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 22.5ns | 7.5 ns | 27.2 ns | 16.3A | 20V | SILICON | DRAIN | SWITCHING | 1.33W Ta 60W Tc | 13.3A | 179A | 0.0068Ohm | 180.5 mJ | 25V | N-Channel | 2241pF @ 12V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13.3A Ta 89A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR3410CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/infineon-irf9520nspbf-datasheets-2985.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 9 Weeks | No SVHC | 480mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 47ns | 31 ns | 28 ns | -6.8A | 20V | SILICON | DRAIN | SWITCHING | 100V | -4V | 3.8W Ta 48W Tc | 150 ns | 27A | -100V | P-Channel | 350pF @ 25V | -4 V | 480m Ω @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IRFR6215CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 150V | 110W Tc | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf9z24nstrlpbf-datasheets-8674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 10.54mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 45W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 55ns | 37 ns | 23 ns | -12A | 20V | 55V | SILICON | DRAIN | SWITCHING | -4V | 3.8W Ta 45W Tc | 48A | 96 mJ | -55V | P-Channel | 350pF @ 25V | -4 V | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IRLR2905CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | N-Channel | 36A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4905SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf4905strrpbf-datasheets-8724.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 170W Tc | TO-252 | 42A | 280A | 0.02Ohm | 140 mJ | P-Channel | 3500pF @ 25V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF1405ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1405zlpbf-datasheets-4233.pdf&product=infineontechnologies-irf1405zspbf-6864807 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 4.9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 110ns | 82 ns | 48 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | 600A | 420 mJ | 55V | N-Channel | 4780pF @ 25V | 4 V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IRLR9343-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr9343trpbf-datasheets-9482.pdf | TO-252-4, DPak (3 Leads + Tab) | 55V | 79W Tc | P-Channel | 660pF @ 50V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 20A Tc | 47nC @ 10V | 4.5V 10V | ±20V |
