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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW90R1K2C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw90r1k2c3fksa1-datasheets-7912.pdf | TO-247-3 | Lead Free | 3 | 6 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83W | 1 | Not Qualified | 70 ns | 20ns | 40 ns | 400 ns | 5.1A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83W Tc | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP80N06S205AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s205atma1-datasheets-3969.pdf | TO-220-3 | 3 | EAR99 | ULTRA-LOW RESISTANCE | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.0051Ohm | 810 mJ | N-Channel | 5110pF @ 25V | 5.1m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI11N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi11n60cfdhksa1-datasheets-7921.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 125W Tc | 11A | 28A | 0.44Ohm | 340 mJ | N-Channel | 1200pF @ 25V | 440m Ω @ 7A, 10V | 5V @ 500μA | 11A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF540ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf540zspbf-datasheets-8683.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | 36A | 140A | 0.0265Ohm | 120 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP80N06S2L06AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l06atma1-datasheets-4279.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Halogen Free | NO | NOT SPECIFIED | Single | NOT SPECIFIED | 250W | 1 | 11 ns | 21ns | 20 ns | 60 ns | 80A | 20V | 55V | SILICON | 250W Tc | TO-220AB | 0.0081Ohm | 55V | N-Channel | 3800pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP47N10SL26AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/infineontechnologies-ipb47n10sl26atma1-datasheets-5437.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 175W Tc | TO-220AB | 47A | 188A | 0.04Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 26m Ω @ 33A, 10V | 2V @ 2mA | 47A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP50R140CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r140cphksa1-datasheets-7866.pdf | TO-220-3 | PG-TO220-3-1 | 550V | 192W Tc | N-Channel | 2540pF @ 100V | 140mOhm @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW90R800C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw90r800c3fksa1-datasheets-7871.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 70 ns | 20ns | 32 ns | 400 ns | 6.9A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | TO-247AD | 0.8Ohm | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPW50R399CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw50r399cpfksa1-datasheets-7876.pdf | TO-247-3 | 3 | 8 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 83W Tc | TO-247AD | 9A | 20A | 0.399Ohm | 215 mJ | N-Channel | 890pF @ 100V | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP22N03S4L15AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb22n03s4l15atma1-datasheets-3227.pdf | TO-220-3 | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 31W Tc | TO-220AB | 22A | 88A | 0.0149Ohm | 20 mJ | N-Channel | 980pF @ 25V | 14.9m Ω @ 22A, 10V | 2.2V @ 10μA | 22A Tc | 14nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPW90R1K0C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw90r1k0c3fksa1-datasheets-7886.pdf | TO-247-3 | Lead Free | 3 | 6 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 89W | 1 | Not Qualified | 70 ns | 20ns | 35 ns | 400 ns | 5.7A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 89W Tc | TO-247AD | 12A | 1Ohm | 97 mJ | N-Channel | 850pF @ 100V | 1 Ω @ 3.3A, 10V | 3.5V @ 370μA | 5.7A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPU78CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb79cn10ng-datasheets-4178.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 31W Tc | 13A | 52A | 0.078Ohm | 17 mJ | N-Channel | 716pF @ 50V | 78m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP80N06S2L11AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l11atma1-datasheets-4131.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 158W Tc | TO-220AB | 80A | 320A | 0.0147Ohm | 280 mJ | N-Channel | 2075pF @ 25V | 11m Ω @ 60A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPU135N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu135n08n3g-datasheets-7831.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 79W Tc | 50A | 200A | 0.0135Ohm | 40 mJ | N-Channel | 1730pF @ 40V | 13.5m Ω @ 50A, 10V | 3.5V @ 33μA | 50A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD30N03S2L10GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-spd30n03s2l10gbtma1-datasheets-7835.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 100W | 1 | R-PSSO-G2 | 6.1 ns | 13ns | 17 ns | 27 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 100W Tc | N-Channel | 1550pF @ 25V | 10m Ω @ 30A, 10V | 2V @ 50μA | 30A Tc | 41.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP80N06S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipb80n06s2l07atma1-datasheets-4046.pdf | TO-220-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 210W Tc | TO-220AB | 80A | 320A | 0.01Ohm | 450 mJ | N-Channel | 3160pF @ 25V | 7m Ω @ 60A, 10V | 2V @ 150μA | 80A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPU075N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips075n03lgakma1-datasheets-7819.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 47W Tc | 50A | 350A | 0.0114Ohm | 50 mJ | N-Channel | 1900pF @ 15V | 7.5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPU103N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu103n08n3g-datasheets-7848.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 100W Tc | 50A | 200A | 0.0103Ohm | 90 mJ | N-Channel | 2410pF @ 40V | 10.3m Ω @ 46A, 10V | 3.5V @ 46μA | 50A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPI15N60CFDHKSA1 | Infineon Technologies | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi15n60cfdhksa1-datasheets-7851.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | yes | 8541.29.00.95 | Not Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 13.4A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 156W Tc | 460 mJ | N-Channel | 1820pF @ 25V | 330m Ω @ 9.4A, 10V | 5V @ 750μA | 13.4A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP100N06S205AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb100n06s205atma1-datasheets-3859.pdf | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 300W | 1 | 21 ns | 31ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | TO-220AB | 400A | 0.005Ohm | N-Channel | 5110pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPI15N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-spi15n65c3xksa1-datasheets-7860.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.2mm | 9.45mm | 4.5mm | Lead Free | 8 Weeks | 3 | No | Halogen Free | Single | 156W | PG-TO262-3-1 | 1.6nF | 32 ns | 14ns | 11 ns | 70 ns | 15A | 20V | 650V | 650V | 156W Tc | 280mOhm | 650V | N-Channel | 1600pF @ 25V | 3 V | 280mOhm @ 9.4A, 10V | 3.9V @ 675μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s2h4atma2-datasheets-4370.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 300W Tc | TO-220AB | 80A | 320A | 0.004Ohm | 660 mJ | N-Channel | 4400pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP80N06S208AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s208atma1-datasheets-3961.pdf | TO-220-3 | EAR99 | 55V | 215W Tc | N-Channel | 2860pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP77N06S212AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb77n06s212atma1-datasheets-4287.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 158W Tc | TO-220AB | 77A | 308A | 0.012Ohm | 280 mJ | N-Channel | 1770pF @ 25V | 12m Ω @ 38A, 10V | 4V @ 93μA | 77A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPS12CN10LGBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips12cn10lgbkma1-datasheets-7810.pdf | TO-251-3 Stub Leads, IPak | 3 | yes | EAR99 | LOGIC LEVL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSIP-T3 | 69A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 125W Tc | 276A | N-Channel | 5600pF @ 50V | 11.8m Ω @ 69A, 10V | 2.4V @ 83μA | 69A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP90R500C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r500c3xksa1-datasheets-7814.pdf | TO-220-3 | 3 | 6 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 156W Tc | TO-220AB | 11A | 24A | 0.5Ohm | 388 mJ | N-Channel | 1700pF @ 100V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPS075N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ips075n03lgakma1-datasheets-7819.pdf | TO-251-3 Stub Leads, IPak | 3 | No SVHC | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 47W | 1 | Not Qualified | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 47W Tc | 50 mJ | N-Channel | 1900pF @ 15V | 7.5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP80N04S3-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s304atma1-datasheets-4329.pdf | TO-220-3 | 3 | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 136W Tc | TO-220AB | 80A | 320A | 0.0042Ohm | 290 mJ | N-Channel | 5200pF @ 25V | 4.1m Ω @ 80A, 10V | 4V @ 90μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPU64CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd64cn10ng-datasheets-4147.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 44W Tc | 17A | 68A | 0.064Ohm | 34 mJ | N-Channel | 569pF @ 50V | 64m Ω @ 17A, 10V | 4V @ 20μA | 17A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP80N04S303AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n04s303aksa1-datasheets-7750.pdf | TO-220-3 | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 188W Tc | TO-220AB | 80A | 320A | 0.0035Ohm | 526 mJ | N-Channel | 7300pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 120μA | 80A Tc | 110nC @ 10V | 10V | ±20V |
