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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7855PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7855pbf-datasheets-7234.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 14 Weeks | No SVHC | 9.4MOhm | 8 | EAR99 | No | Single | 97mW | 1 | 8.7 ns | 13ns | 12 ns | 16 ns | 12A | 20V | 4.9V | 2.5W Ta | 50 ns | 60V | N-Channel | 1560pF @ 25V | 9.4m Ω @ 12A, 10V | 4.9V @ 100μA | 12A Ta | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7534D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7534d1pbf-datasheets-7243.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.05mm | 910μm | 3.05mm | Lead Free | No SVHC | 8 | Micro8™ | 1.066nF | 10 ns | 60 ns | 4.3A | 12V | 20V | -1.2V | 1.25W Ta | 55mOhm | P-Channel | 1066pF @ 10V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250μA | 4.3A Ta | 15nC @ 5V | Schottky Diode (Isolated) | 55 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR13N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr13n15dtrpbf-datasheets-1929.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 150V | 86W Tc | N-Channel | 620pF @ 25V | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 14A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3303CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-944737-datasheets-0525.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 57W Tc | N-Channel | 750pF @ 25V | 31mOhm @ 18A, 10V | 4V @ 250μA | 33A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJS3113PTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntljs3113pt1g-datasheets-1259.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 5 Weeks | 40MOhm | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | YES | DUAL | C BEND | 6 | Single | 1.9W | 1 | Other Transistors | 6.9 ns | 17.5ns | 17.5 ns | 60 ns | -5.8A | 8V | SILICON | DRAIN | SWITCHING | 700mW Ta | 3.5A | 23A | 20V | P-Channel | 1329pF @ 16V | 40m Ω @ 3A, 4.5V | 1V @ 250μA | 3.5A Ta | 15.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRL3713SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irl3713strlpbf-datasheets-3021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 3mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 160ns | 57 ns | 40 ns | 260A | 20V | 30V | SILICON | DRAIN | SWITCHING | 2.5V | 330W Tc | 75A | 30V | N-Channel | 5890pF @ 15V | 2.5 V | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 260A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR8721PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8721trpbf-datasheets-4868.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 8.4MOhm | 3 | EAR99 | No | 8541.29.00.95 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 30 | 65W | 1 | R-PSSO-G2 | 8.8 ns | 30ns | 6.5 ns | 9.4 ns | 65A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.9V | 65W Tc | TO-252AA | 26 ns | 260A | 30V | N-Channel | 1030pF @ 15V | 8.4m Ω @ 25A, 10V | 2.35V @ 25μA | 65A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF3805SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf3805strlpbf-datasheets-3006.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | 75A | 890A | 0.0033Ohm | 940 mJ | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR7807ZCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 40W Tc | N-Channel | 780pF @ 15V | 13.8m Ω @ 15A, 10V | 2.25V @ 250μA | 43A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf2907zpbf-datasheets-0354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 75V | 300W Tc | N-Channel | 7500pF @ 25V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8721PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8721trpbf-datasheets-4711.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 39 Weeks | No SVHC | 8.5MOhm | 8 | EAR99 | No | Single | 2.5W | 1 | 8.2 ns | 11ns | 7 ns | 8.1 ns | 14A | 20V | 2.35V | 2.5W Ta | 21 ns | 30V | N-Channel | 1040pF @ 15V | 2.35 V | 8.5m Ω @ 14A, 10V | 2.35V @ 25μA | 14A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR5505CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5505cpbf-datasheets-7304.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55V | 57W Tc | P-Channel | 650pF @ 25V | 110mOhm @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7524D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7524d1pbf-datasheets-7208.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | NOT SPECIFIED | NOT SPECIFIED | 1.25W | 1 | 35ns | 43 ns | 38 ns | -1.7A | 12V | 20V | 1.25W Ta | -20V | P-Channel | 240pF @ 15V | 270m Ω @ 1.2A, 4.5V | 700mV @ 250μA | 1.7A Ta | 8.2nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSS060P05FU6TB | ROHM Semiconductor | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss060p05fu6tb-datasheets-7013.pdf | 8-SOIC (0.154, 3.90mm Width) | 10 Weeks | No SVHC | 8 | yes | EAR99 | Other Transistors | 6A | Single | 45V | -2.5V | 2W Ta | 6A | P-Channel | 2700pF @ 10V | 36m Ω @ 6A, 10V | 6A Ta | 32.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8736PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8736pbf-datasheets-7216.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 4.8MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 12 ns | 15ns | 7.5 ns | 13 ns | 18A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 24 ns | 30V | N-Channel | 2315pF @ 15V | 1.8 V | 4.8m Ω @ 18A, 10V | 2.35V @ 50μA | 18A Ta | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6215L-103PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 3.8W Ta 110W Tc | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7811WCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 71W Tc | N-Channel | 2260pF @ 15V | 10.5mOhm @ 15A, 10V | 2.5V @ 250μA | 64A Tc | 31nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3716SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3716pbf-datasheets-0487.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 210W Tc | N-Channel | 5090pF @ 10V | 4m Ω @ 90A, 10V | 3V @ 250μA | 180A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8707PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8707trpbf-datasheets-5320.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 3.9878mm | Lead Free | 8 | No SVHC | 11.9MOhm | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 6.7 ns | 7.9ns | 4.4 ns | 7.3 ns | 11A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 18 ns | 53 mJ | 30V | N-Channel | 760pF @ 15V | 1.8 V | 11.9m Ω @ 11A, 10V | 2.35V @ 25μA | 11A Ta | 9.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RSS065N06FU6TB | ROHM Semiconductor | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss065n06fu6tb-datasheets-7096.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | yes | EAR99 | 2W | FET General Purpose Power | 20 ns | 60 ns | 6.5A | Single | 2W Ta | 60V | N-Channel | 900pF @ 10V | 37m Ω @ 6.5A, 10V | 2.5V @ 1mA | 6.5A Ta | 16nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3706CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5305CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5305cpbf-datasheets-7174.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55V | 110W Tc | P-Channel | 1200pF @ 25V | 65mOhm @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7854PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7854trpbf-datasheets-3676.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 13.4MOhm | 8 | No | 2.5W | 1 | 8-SO | 1.62nF | 2.5A | 9.4 ns | 8.5ns | 8.6 ns | 15 ns | 10A | 20V | 80V | 80V | 4.9V | 2.5W Ta | 65 ns | 13.4mOhm | 80V | N-Channel | 1620pF @ 25V | 4.9 V | 13.4mOhm @ 10A, 10V | 4.9V @ 100μA | 10A Ta | 41nC @ 10V | 13.4 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFU4104-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | TO-252-4, DPak (3 Leads + Tab) | 40V | 140W Tc | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NCPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu220n-datasheets-5159.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 200V | 43W Tc | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Ta | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RDX080N50FU6 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdx080n50fu6-datasheets-7080.pdf | TO-220-3 Full Pack | 17 Weeks | yes | 40W | 8A | 40W Tc | 500V | N-Channel | 920pF @ 25V | 850m Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711pbf-datasheets-8504.pdf | 20V | 110A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 6MOhm | 3 | 120W | D2PAK | 2.98nF | 220ns | 110A | 20V | 20V | 3.1W Ta 120W Tc | 8.5mOhm | 20V | N-Channel | 2980pF @ 10V | 6mOhm @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4841NHT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4841nht1g-datasheets-9595.pdf | 8-PowerTDFN, 5 Leads | 6 | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 8 | Single | 40 | 5.7W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F6 | 20.6ns | 2.9 ns | 21.9 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 870mW Ta 41.7W Tc | 13.5A | 177A | 0.0116Ohm | 98 mJ | 30V | N-Channel | 2113pF @ 12V | 7m Ω @ 30A, 10V | 2.5V @ 250μA | 8.6A Ta 59A Tc | 33nC @ 11.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLR4343-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr4343trr-datasheets-8952.pdf | TO-252-4, DPak (3 Leads + Tab) | 55V | 79W Tc | N-Channel | 740pF @ 50V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 26A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSS070N05FU6TB | ROHM Semiconductor | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss070n05fu6tb-datasheets-7060.pdf | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 23mOhm | 8 | 7A | 45V | 2.5V | 2W Ta | N-Channel | 1000pF @ 10V | 2.5 V | 25m Ω @ 7A, 10V | 7A Ta | 16.8nC @ 5V | 4V 10V | 20V |
