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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU3710Z-701P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3710ztrl-datasheets-6109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | 42A | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3711ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP08CN10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cn10lg-datasheets-7661.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 167W Tc | TO-220AB | 98A | 392A | 0.008Ohm | 254 mJ | N-Channel | 8610pF @ 50V | 8m Ω @ 98A, 10V | 2.4V @ 130μA | 98A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF1010ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1010zstrlpbf-datasheets-9374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 7.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP100N04S204AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n04s204atma1-datasheets-3827.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | 3 | 3 | EAR99 | AVALANCHE RATED | Halogen Free | NO | Single | 300W | 1 | 27 ns | 46ns | 33 ns | 56 ns | 100A | 20V | 40V | SILICON | 300W Tc | TO-220AB | 400A | 810 mJ | 40V | N-Channel | 5300pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL5602STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602spbf-datasheets-8829.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 75W | 1 | D2PAK | 1.46nF | 73ns | 84 ns | 53 ns | -24A | 8V | 20V | 75W Tc | 42mOhm | -20V | P-Channel | 1460pF @ 15V | 42mOhm @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 42 mΩ | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44VZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz44vzspbf-datasheets-3027.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 92W Tc | N-Channel | 1690pF @ 25V | 12mOhm @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLGF3501NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntlgf3501nt2g-datasheets-7608.pdf | 6-VDFN Exposed Pad | 6 | 4 Weeks | 6 | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | C BEND | 260 | 6 | 40 | 1.74W | 1 | 4.8 ns | 13.6ns | 13.6 ns | 9 ns | 3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.14W Ta | 2.8A | 13.8A | 0.09Ohm | 20V | N-Channel | 275pF @ 10V | 90m Ω @ 3.4A, 4.5V | 2V @ 250μA | 2.8A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRFS4227PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs4227trlpbf-datasheets-8692.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 33 ns | 20ns | 31 ns | 21 ns | 62A | 30V | 240V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | 150 ns | 260A | 0.026Ohm | 200V | N-Channel | 4600pF @ 25V | 5 V | 26m Ω @ 46A, 10V | 5V @ 250μA | 62A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IRL3714STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714lpbf-datasheets-8347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 47W | D2PAK | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 47W Tc | 20mOhm | 20V | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7833-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | TO-252-4, DPak (3 Leads + Tab) | I-PAK (LF701) | 30V | 140W Tc | N-Channel | 4010pF @ 15V | 4.5mOhm @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7843-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | TO-252-4, DPak (3 Leads + Tab) | I-PAK (LF701) | 30V | 140W Tc | N-Channel | 4380pF @ 15V | 3.3mOhm @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3708pbf-datasheets-1914.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 87W Tc | N-Channel | 2417pF @ 15V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3709pbf-datasheets-7962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.1W Ta 120W Tc | N-Channel | 2672pF @ 16V | 9mOhm @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4857N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4857nt4g-datasheets-7004.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Power | Not Qualified | 18.7ns | 3.6 ns | 26 ns | 14.6A | 20V | SILICON | DRAIN | SWITCHING | 1.31W Ta 56.6W Tc | 12A | 156A | 0.008Ohm | 144.5 mJ | 25V | N-Channel | 1960pF @ 12V | 5.7m Ω @ 30A, 10V | 2.5V @ 250μA | 12A Ta 78A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7425PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7425trpbf-datasheets-3578.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 15A | 60A | 0.0082Ohm | P-Channel | 7980pF @ 15V | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 15A Ta | 130nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP070N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb067n08n3gatma1-datasheets-8491.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 136W Tc | TO-220AB | 80A | 320A | 0.007Ohm | 150 mJ | N-Channel | 3840pF @ 40V | 7m Ω @ 73A, 10V | 3.5V @ 73μA | 80A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF5210SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf5210lpbf-datasheets-8886.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 170W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2780pF @ 25V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6216PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6216trpbf-datasheets-4195.pdf | 8-SOIC (0.154, 3.90mm Width) | 39 Weeks | EAR99 | 150V | 2.5W Ta | P-Channel | 1280pF @ 25V | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 2.2A Ta | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57W Tc | 42A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS3307PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs3307trlpbf-datasheets-6111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 6.2MOhm | 3 | No | Single | 200W | 1 | 26 ns | 120ns | 63 ns | 51 ns | 130A | 20V | 200W Tc | 75V | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL024ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll024ztrpbf-datasheets-8545.pdf | 55V | 5A | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Contains Lead | 10 Weeks | No SVHC | 60MOhm | 3 | EAR99 | No | Single | 2.8W | 1 | 8.6 ns | 33ns | 15 ns | 20 ns | 5A | 16V | 55V | 3V | 1W Ta | 55V | N-Channel | 380pF @ 25V | 3 V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Tc | 11nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFU3706-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3706pbf-datasheets-7064.pdf | TO-252-4, DPak (3 Leads + Tab) | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 14MOhm | 3 | EAR99 | No | Single | 140mW | 1 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | 100V | 2.5V | 140W Tc | 51 ns | 100V | N-Channel | 3980pF @ 25V | 2.5 V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 57W Tc | N-Channel | 1220pF @ 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7210PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7210pbf-datasheets-7531.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 7mOhm | 8 | No | 2.5W | 1 | 8-SO | 17.179nF | 50 ns | 3ns | 30 ns | 6.5 ns | -16A | 12V | 12V | 12V | 600mV | 2.5W Ta | 247 ns | 7mOhm | -12V | P-Channel | 17179pF @ 10V | 600 mV | 7mOhm @ 16A, 4.5V | 600mV @ 500μA | 16A Ta | 212nC @ 5V | 7 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRFU3518-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3518trpbf-datasheets-0018.pdf | TO-252-4, DPak (3 Leads + Tab) | 80V | 110W Tc | N-Channel | 1710pF @ 25V | 29m Ω @ 18A, 10V | 4V @ 250μA | 38A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1404ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf1404zpbf-datasheets-2186.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 52 Weeks | EAR99 | 40V | 200W Tc | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 150μA | 180A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910CPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3910cpbf-datasheets-7446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 100V | 79W Tc | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V |
