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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF3711ZCSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R520CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r520cpxksa1-datasheets-4017.pdf | TO-220-3 | PG-TO220-3-1 | 550V | 66W Tc | N-Channel | 680pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz44zpbf-datasheets-1663.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 3 | No | Single | 80W | 1 | D2PAK | 1.62nF | 14 ns | 160ns | 42 ns | 25 ns | 51A | 16V | 55V | 80W Tc | 13.5mOhm | 55V | N-Channel | 1620pF @ 25V | 13.5mOhm @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 13.5 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s2h4atma2-datasheets-4370.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 300W Tc | TO-220AB | 80A | 320A | 0.004Ohm | 660 mJ | N-Channel | 4400pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP80N06S208AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s208atma1-datasheets-3961.pdf | TO-220-3 | EAR99 | 55V | 215W Tc | N-Channel | 2860pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP77N06S212AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb77n06s212atma1-datasheets-4287.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 158W Tc | TO-220AB | 77A | 308A | 0.012Ohm | 280 mJ | N-Channel | 1770pF @ 25V | 12m Ω @ 38A, 10V | 4V @ 93μA | 77A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPS12CN10LGBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips12cn10lgbkma1-datasheets-7810.pdf | TO-251-3 Stub Leads, IPak | 3 | yes | EAR99 | LOGIC LEVL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSIP-T3 | 69A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 125W Tc | 276A | N-Channel | 5600pF @ 50V | 11.8m Ω @ 69A, 10V | 2.4V @ 83μA | 69A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP90R500C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r500c3xksa1-datasheets-7814.pdf | TO-220-3 | 3 | 6 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 156W Tc | TO-220AB | 11A | 24A | 0.5Ohm | 388 mJ | N-Channel | 1700pF @ 100V | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 11A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP60R520CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r520cpxksa1-datasheets-7736.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 6.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 66W Tc | TO-220AB | 17A | 0.52Ohm | 166 mJ | N-Channel | 630pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 340μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP35CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd33cn10ngbuma1-datasheets-4125.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 58W Tc | TO-220AB | 27A | 108A | 0.035Ohm | 47 mJ | N-Channel | 1570pF @ 50V | 35m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP080N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp080n03lg-datasheets-7674.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 47W Tc | TO-220AB | 48A | 350A | 0.0119Ohm | 50 mJ | N-Channel | 1900pF @ 15V | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP47N10S33AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb47n10s33atma1-datasheets-5708.pdf | TO-220-3 | 3 | 16 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 175W Tc | TO-220AB | 47A | 188A | 0.033Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 33m Ω @ 33A, 10V | 4V @ 2mA | 47A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP16CN10LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp16cn10lgxksa1-datasheets-7683.pdf | TO-220-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSFM-T3 | 54A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100W Tc | TO-220AB | N-Channel | 4190pF @ 50V | 15.7m Ω @ 54A, 10V | 2.4V @ 61μA | 54A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL8113STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl8113pbf-datasheets-8524.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 110W Tc | N-Channel | 2840pF @ 15V | 6mOhm @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N03S4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-ipb80n03s4l03atma1-datasheets-4406.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | ULTRA LOW RESISTANCE | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 9 ns | 6ns | 7 ns | 37 ns | 80A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | TO-220AB | 95 mJ | N-Channel | 5100pF @ 25V | 3.7m Ω @ 80A, 10V | 2.2V @ 45μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IPP50R399CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r399cpxksa1-datasheets-7949.pdf | TO-220-3 | 3 | PG-TO220-3-1 | 890pF | 9A | 560V | 83W Tc | N-Channel | 890pF @ 100V | 399mOhm @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 399 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S207AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n06s207atma1-datasheets-3976.pdf | TO-220-3 | 3 | EAR99 | No | 18 ns | 35ns | 31 ns | 28 ns | 80A | 20V | 55V | 250W Tc | N-Channel | 3400pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZCSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57W Tc | 42A | 260A | 0.0079Ohm | 36 mJ | N-Channel | 1220pF @ 10V | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP230N06L3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp230n06l3g-datasheets-7708.pdf | TO-220-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 36W Tc | TO-220AB | 30A | 120A | 0.023Ohm | 13 mJ | N-Channel | 1600pF @ 30V | 23m Ω @ 30A, 10V | 2.2V @ 11μA | 30A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF9540NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf9540nlpbf-datasheets-3671.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 110W Tc | 23A | 92A | 0.117Ohm | 84 mJ | P-Channel | 1450pF @ 25V | 117m Ω @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP80N04S204AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb80n04s204atma1-datasheets-3954.pdf | TO-220-3 | Contains Lead | 3 | 17 Weeks | 3 | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 300W | 1 | 26 ns | 45ns | 32 ns | 56 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | N-Channel | 5300pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP60R600CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r600cpxksa1-datasheets-7727.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 60W | 1 | Not Qualified | R-PSFM-T3 | 6.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60W Tc | TO-220AB | 0.6Ohm | N-Channel | 550pF @ 100V | 600m Ω @ 3.3A, 10V | 3.5V @ 220μA | 6.1A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP80N04S306AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipb80n04s306atma1-datasheets-1223.pdf | TO-220-3 | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 100W Tc | TO-220AB | 80A | 320A | 0.0057Ohm | 125 mJ | N-Channel | 3250pF @ 25V | 5.7m Ω @ 80A, 10V | 4V @ 52μA | 80A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP08CN10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cn10lg-datasheets-7661.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 167W Tc | TO-220AB | 98A | 392A | 0.008Ohm | 254 mJ | N-Channel | 8610pF @ 50V | 8m Ω @ 98A, 10V | 2.4V @ 130μA | 98A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF1010ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1010zstrlpbf-datasheets-9374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 7.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IPP100N04S204AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n04s204atma1-datasheets-3827.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | 3 | 3 | EAR99 | AVALANCHE RATED | Halogen Free | NO | Single | 300W | 1 | 27 ns | 46ns | 33 ns | 56 ns | 100A | 20V | 40V | SILICON | 300W Tc | TO-220AB | 400A | 810 mJ | 40V | N-Channel | 5300pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRL5602STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602spbf-datasheets-8829.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 75W | 1 | D2PAK | 1.46nF | 73ns | 84 ns | 53 ns | -24A | 8V | 20V | 75W Tc | 42mOhm | -20V | P-Channel | 1460pF @ 15V | 42mOhm @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 42 mΩ | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44VZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz44vzspbf-datasheets-3027.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 92W Tc | N-Channel | 1690pF @ 25V | 12mOhm @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLGF3501NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntlgf3501nt2g-datasheets-7608.pdf | 6-VDFN Exposed Pad | 6 | 4 Weeks | 6 | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | C BEND | 260 | 6 | 40 | 1.74W | 1 | 4.8 ns | 13.6ns | 13.6 ns | 9 ns | 3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.14W Ta | 2.8A | 13.8A | 0.09Ohm | 20V | N-Channel | 275pF @ 10V | 90m Ω @ 3.4A, 4.5V | 2V @ 250μA | 2.8A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±12V |
