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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTD25P03LRLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntd25p03lt4g-datasheets-2079.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 75W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 37ns | 16 ns | 15 ns | 25A | 15V | SILICON | DRAIN | SWITCHING | 30V | 75W Tj | 75A | 0.08Ohm | 200 mJ | -30V | P-Channel | 1260pF @ 25V | 80m Ω @ 25A, 5V | 2V @ 250μA | 25A Ta | 20nC @ 5V | 4V 5V | ±15V | ||||||||||||||||||||||||||||||||||||||
| NTD4809NA-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4809nat4g-datasheets-6875.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | No | Single | 2W | 1 | 22.7ns | 2.3 ns | 25.3 ns | 11.5A | 20V | 1.3W Ta 52W Tc | 30V | N-Channel | 1456pF @ 12V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.6A Ta 58A Tc | 13nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002WT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | SC-70, SOT-323 | 3 | 3 | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 3 | Single | 280mW | 1 | FET General Purpose Power | 12.2 ns | 9ns | 9 ns | 55.8 ns | 310mA | 20V | SILICON | SWITCHING | 280mW Tj | 60V | N-Channel | 24.5pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 310mA Ta | 0.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002KT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-2n7002kt1g-datasheets-2546.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 300mW | 1 | FET General Purpose Power | Not Qualified | 9ns | 9 ns | 55.8 ns | 320mA | 20V | SILICON | SWITCHING | 350mW Ta | 60V | N-Channel | 24.5pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 320mA Ta | 0.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD4804N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4804nt4g-datasheets-4064.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NO | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 19ns | 5 ns | 35 ns | 117A | 20V | SILICON | DRAIN | SWITCHING | 1.43W Ta 107W Tc | 230A | 0.0055Ohm | 30V | N-Channel | 4490pF @ 12V | 4m Ω @ 30A, 10V | 2.5V @ 250μA | 14.5A Ta 124A Tc | 40nC @ 4.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD135N03LGXT | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n03lgxt-datasheets-6793.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 3 ns | 3ns | 2.2 ns | 12 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 31W Tc | TO-252AA | 210A | 20 mJ | N-Channel | 1000pF @ 15V | 13.5m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDZ4670S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdz4670s-datasheets-6853.pdf | 20-FLFBGA (30 pos) | 20-FLFBGA (3.55x4) | 30V | 2.5W Ta | N-Channel | 3845pF @ 15V | 2.4mOhm @ 25A, 10V | 3V @ 1mA | 25A Ta | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA411DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia411djt1ge3-datasheets-2938.pdf | PowerPAK® SC-70-6 | Lead Free | 6 | Unknown | 30MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | UNSPECIFIED | 260 | 6 | Single | 40 | 3.5W | 1 | Other Transistors | 12 ns | 65ns | 100 ns | 40 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | -1V | 3.5W Ta 19W Tc | 20A | 20V | P-Channel | 1200pF @ 10V | -1 V | 30m Ω @ 5.9A, 4.5V | 1V @ 250μA | 12A Tc | 38nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SUM90N08-4M8P-E3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n084m8pe3-datasheets-6685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4.8MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3.75W | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 23 ns | 17ns | 8 ns | 34 ns | 90A | 20V | DRAIN | SWITCHING | 240A | 245 mJ | 75V | N-Channel | 6460pF @ 40V | 4.8m Ω @ 20A, 10V | 4V @ 250μA | 90A Tc | 160nC @ 10V | |||||||||||||||||||||||||||||||||||||||||
| SUM110N04-05H-E3 | Vishay Siliconix | $19.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0405he3-datasheets-6698.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | 3 | Single | 3.75W | 1 | TO-263 (D2Pak) | 6.7nF | 20 ns | 95ns | 12 ns | 50 ns | 11A | 20V | 40V | 3.75W Ta 150W Tc | 5.3mOhm | 40V | N-Channel | 6700pF @ 25V | 5.3mOhm @ 30A, 10V | 5V @ 250μA | 110A Tc | 95nC @ 10V | 5.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3068(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3068te24lq-datasheets-6763.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 500V | 100W Tc | N-Channel | 2040pF @ 10V | 520m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM33N20-60P-E3 | Vishay Siliconix | $11.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum33n2060pe3-datasheets-6509.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 3 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 170ns | 9 ns | 26 ns | 33A | 25V | 200V | SILICON | 4.5V | 3.12W Ta 156W Tc | 114 ns | 80A | 0.144Ohm | 20 mJ | 200V | N-Channel | 2735pF @ 25V | 4.5 V | 59m Ω @ 20A, 15V | 4.5V @ 250μA | 33A Tc | 113nC @ 15V | 10V 15V | ±25V | ||||||||||||||||||||||||||||||||||||
| BSC050N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc050n03msgatma1-datasheets-6798.pdf | 8-PowerTDFN | 5 | 16 Weeks | 8 | no | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PDSO-F5 | 7.2ns | 16A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 50W Tc | 320A | 0.0063Ohm | 35 mJ | N-Channel | 3600pF @ 15V | 5m Ω @ 30A, 10V | 2V @ 250μA | 16A Ta 80A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMS8662 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8662-datasheets-6750.pdf | 8-PowerTDFN | Lead Free | 68.1mg | 2MOhm | 8 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | 10ns | 7 ns | 45 ns | 28A | 20V | 2.5W Ta 83W Tc | 30V | N-Channel | 6420pF @ 15V | 2m Ω @ 28A, 10V | 3V @ 250μA | 28A Ta 49A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC100N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsc100n03lsgatma1-datasheets-6819.pdf | 8-PowerTDFN | 5 | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | DUAL | FLAT | 260 | 8 | 40 | 1 | Not Qualified | R-PDSO-F5 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 30W Tc | 13A | 176A | 0.0142Ohm | 10 mJ | N-Channel | 1500pF @ 15V | 10m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 44A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMS8672AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8672as-datasheets-6714.pdf | 8-PowerTDFN | Lead Free | 68.1mg | 8 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | 12 ns | 4ns | 3 ns | 27 ns | 28A | 20V | 2.5W Ta 70W Tc | 30V | N-Channel | 2600pF @ 15V | 5m Ω @ 18A, 10V | 3V @ 1mA | 18A Ta 28A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4805N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4805nt4g-datasheets-3598.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 2.24W | 1 | FET General Purpose Power | R-PSIP-T3 | 20.3ns | 8 ns | 20.8 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 1.41W Ta 79W Tc | 95A | 288 mJ | 30V | N-Channel | 2865pF @ 12V | 5m Ω @ 30A, 10V | 2.5V @ 250μA | 12.7A Ta 95A Tc | 48nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMN2170U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2170u7-datasheets-6740.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 7.994566mg | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 2.3A | 12V | SILICON | SWITCHING | 600mW Ta | 0.07Ohm | 20V | N-Channel | 217pF @ 10V | 70m Ω @ 3A, 4.5V | 1V @ 250μA | 2.3A Ta | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD105N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd105n03lgatma1-datasheets-6785.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSSO-G2 | 3.7 ns | 14ns | 2.4 ns | 14 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 38W Tc | TO-252AA | 245A | 30 mJ | 30V | N-Channel | 1500pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 35A Tc | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP8443 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp8443-datasheets-6717.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 188W Tc | TO-220AB | 20A | 0.0035Ohm | 531 mJ | N-Channel | 9310pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 20A Ta 80A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDMS8674 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8674-datasheets-6727.pdf | 8-PowerTDFN | compliant | 30V | 2.5W Ta 78W Tc | N-Channel | 2320pF @ 15V | 5m Ω @ 17A, 10V | 3V @ 250μA | 17A Ta 21A Tc | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP04CN10NG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp04cn10ng-datasheets-6730.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 300W Tc | TO-220AB | 100A | 400A | 0.0042Ohm | 1000 mJ | N-Channel | 13800pF @ 50V | 4.2m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SK2916(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2916f-datasheets-6586.pdf | TO-3P-3, SC-65-3 | 3 | Single | 80W | 1 | TO-3P(N)IS | 2.6nF | 106ns | 89 ns | 108 ns | 14A | 30V | 500V | 80W Tc | 400mOhm | 500V | N-Channel | 2600pF @ 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 14A Ta | 58nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6622TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6622trpbf-datasheets-6588.pdf | 25V | 15A | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | 3 | 5 | EAR99 | No | BOTTOM | 34W | 1 | FET General Purpose Power | R-XBCC-N3 | 9.4 ns | 16ns | 4.6 ns | 13 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 34W Tc | 120A | 0.0063Ohm | 13 mJ | 25V | N-Channel | 1450pF @ 13V | 6.3m Ω @ 15A, 10V | 2.35V @ 25μA | 15A Ta 59A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDPF52N20T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp52n20-datasheets-3622.pdf | TO-220-3 Full Pack | compliant | NOT SPECIFIED | NOT SPECIFIED | 200V | 38.5W Tc | N-Channel | 2900pF @ 25V | 49m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3515STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 150V | N-Channel | 2260pF @ 25V | 45m Ω @ 25A, 10V | 4.5V @ 250μA | 41A Tc | 107nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N06-3M9H-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sum110n063m9he3-datasheets-6610.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 45 ns | 160ns | 14 ns | 75 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 60V | 3.4V | 3.75W Ta 375W Tc | 440A | 245 mJ | 40V | N-Channel | 15800pF @ 25V | 3.9m Ω @ 30A, 10V | 4.5V @ 250μA | 110A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUM18N25-165-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum18n25165e3-datasheets-6641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 165MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 130ns | 100 ns | 30 ns | 18A | 20V | SILICON | SWITCHING | 250V | 250V | 3.75W Ta 150W Tc | 20A | N-Channel | 1950pF @ 25V | 165m Ω @ 14A, 10V | 4V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUM50N06-16L-E3 | Vishay Siliconix | $5.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50n0616le3-datasheets-6668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 16mOhm | 3 | No | Single | TO-263 (D2Pak) | 1.325nF | 10 ns | 9ns | 7 ns | 25 ns | 50A | 20V | 60V | 2V | 3.7W Ta 93W Tc | 16mOhm | N-Channel | 1325pF @ 25V | 16mOhm @ 20A, 10V | 3V @ 250μA | 50A Tc | 40nC @ 10V | 16 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM40N10-30-E3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40n1030e3-datasheets-6651.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | Unknown | 30mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 12ns | 12 ns | 30 ns | 40A | 20V | SILICON | SWITCHING | 100V | 3.75W Ta 107W Tc | 75A | N-Channel | 2400pF @ 25V | 4 V | 30m Ω @ 15A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 6V 10V | ±20V |
