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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7107DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7107dnt1ge3-datasheets-2911.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | Unknown | 10.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 27 ns | 55ns | 55 ns | 270 ns | -15.3A | 8V | SILICON | DRAIN | SWITCHING | -1V | 1.5W Ta | 40A | 20V | P-Channel | 10.8m Ω @ 15.3A, 4.5V | 1V @ 450μA | 9.8A Ta | 44nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI6459BDQ-T1-E3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6459bdqt1ge3-datasheets-2841.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1W | 1 | Not Qualified | 10 ns | 15ns | 15 ns | 50 ns | 2.2A | 20V | SILICON | 60V | 60V | 1W Ta | P-Channel | 115m Ω @ 2.7A, 10V | 3V @ 250μA | 2.2A Ta | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFPS43N50K | Vishay Siliconix | $4.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps43n50k-datasheets-6058.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | 38.000013g | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 8.31nF | 25 ns | 140ns | 74 ns | 55 ns | 47A | 30V | 500V | 540W Tc | 90mOhm | N-Channel | 8310pF @ 25V | 90mOhm @ 28A, 10V | 5V @ 250μA | 47A Tc | 350nC @ 10V | 90 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRF5805TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 Thin, TSOT-23-6 | EAR99 | e3 | Matte Tin (Sn) | YES | Other Transistors | Single | 30V | 2W Ta | 3.8A | P-Channel | 511pF @ 25V | 98m Ω @ 3.8A, 10V | 2.5V @ 250μA | 3.8A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7100DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7100dnt1e3-datasheets-6067.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 14 ns | 52ns | 8 ns | 53 ns | 26.1A | 8V | SILICON | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 35A | 60A | 0.0035Ohm | 8V | N-Channel | 3810pF @ 4V | 3.5m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 105nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SI6435ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6435adqt1ge3-datasheets-2846.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | 8 | No SVHC | 30mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | 12 ns | 10ns | 10 ns | 42 ns | 4.7A | 20V | -30V | 30V | -1V | -30V | P-Channel | -1 V | 30m Ω @ 5.5A, 10V | 1V @ 250μA (Min) | 4.7A Ta | 20nC @ 5V | ||||||||||||||||||||||||||||||||||
| SI6410DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6410dqt1ge3-datasheets-2843.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | 8 | 14mOhm | 8 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | Single | 10 | 1.5W | 1 | FET General Purpose Power | 15 ns | 10ns | 10 ns | 70 ns | 7.8A | 20V | SILICON | 1.5W Ta | 30A | 30V | N-Channel | 14m Ω @ 7.8A, 10V | 1V @ 250μA (Min) | 33nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR13N15DTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu13n15d-datasheets-1189.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 150V | 86W Tc | N-Channel | 620pF @ 25V | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 14A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB42N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-220-3 | 3 | EAR99 | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 2.4W Ta 330W Tc | TO-220AB | 44A | 180A | 0.055Ohm | 510 mJ | N-Channel | 3430pF @ 25V | 55m Ω @ 26A, 10V | 5.5V @ 250μA | 44A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7702TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 12V | 1.5W Tc | P-Channel | 3470pF @ 10V | 14mOhm @ 8A, 4.5V | 1.2V @ 250μA | 8A Tc | 81nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7702 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | -12V | -8A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8-TSSOP | 3.47nF | 8A | 12V | 1.5W Tc | P-Channel | 3470pF @ 10V | 14mOhm @ 8A, 4.5V | 1.2V @ 250μA | 8A Tc | 81nC @ 4.5V | 14 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7241 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | ULTRA LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.5W Ta | MS-012AA | 6.2A | 0.041Ohm | P-Channel | 3220pF @ 25V | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 6.2A Ta | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trl-datasheets-4784.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 47W Tc | TO-252AA | 36A | 140A | 0.02Ohm | 72 mJ | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5857DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5857dut1e3-datasheets-5947.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 58mOhm | 1 | PowerPAK® ChipFet Dual | 480pF | 5 ns | 15ns | 10 ns | 25 ns | 6A | 12V | 20V | 2.3W Ta 10.4W Tc | 58mOhm | -20V | P-Channel | 480pF @ 10V | 58mOhm @ 3.6A, 4.5V | 1.5V @ 250μA | 6A Tc | 17nC @ 10V | Schottky Diode (Isolated) | 58 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu220n-datasheets-5159.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 43W Tc | TO-252AA | 5A | 20A | 0.6Ohm | 46 mJ | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7706TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 1.51W Ta | P-Channel | 2211pF @ 25V | 22mOhm @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI620 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi620gpbf-datasheets-3357.pdf | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 260pF | 4.1A | 200V | 30W Tc | N-Channel | 260pF @ 25V | 800mOhm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7705TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 1.5W Tc | P-Channel | 2774pF @ 25V | 18mOhm @ 8A, 10V | 2.5V @ 250μA | 8A Tc | 88nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7453TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | 250V | 2.2A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8-SO | 930pF | 2.5ns | 2.2A | 250V | 2.5W Ta | N-Channel | 930pF @ 25V | 230mOhm @ 1.3A, 10V | 5.5V @ 250μA | 2.2A Ta | 38nC @ 10V | 230 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2405trr-datasheets-5970.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 30A | 220A | 0.0016Ohm | 130 mJ | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFIZ46G | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 50V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5855DC-T1-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5855dct1e3-datasheets-5977.pdf | 8-SMD, Flat Lead | Lead Free | 8 | Unknown | 110mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 1.1W | 1 | Other Transistors | 16 ns | 30ns | 30 ns | 30 ns | 2.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 20V | P-Channel | -450 mV | 110m Ω @ 2.7A, 4.5V | 1V @ 250μA | 2.7A Ta | 7.7nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| IRF7807VD2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7703TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 40V | 1.5W Ta | P-Channel | 5220pF @ 25V | 28mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 62nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7477TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 30V | 2.5W Ta | N-Channel | 2710pF @ 15V | 8.5m Ω @ 14A, 10V | 2.5V @ 250μA | 14A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP31N50L | Vishay Siliconix | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp31n50l-datasheets-5920.pdf | 500V | 31A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | No | 1 | Single | 460W | 1 | TO-247-3 | 5nF | 28 ns | 115ns | 53 ns | 54 ns | 31A | 30V | 500V | 460W Tc | 180mOhm | N-Channel | 5000pF @ 25V | 180mOhm @ 19A, 10V | 5V @ 250μA | 31A Tc | 210nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF7704TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 40V | 1.5W Ta | P-Channel | 3150pF @ 25V | 46mOhm @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807VD1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | 8-SOIC (0.154, 3.90mm Width) | YES | FET General Purpose Power | Single | 30V | 2.5W Ta | 8.3A | N-Channel | 25m Ω @ 7A, 4.5V | 3V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7451 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 3.6A | 28A | 0.09Ohm | 210 mJ | N-Channel | 990pF @ 25V | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 3.6A Ta | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7726 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | ULTRA LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.79W Ta | 7A | 28A | 0.026Ohm | P-Channel | 2204pF @ 25V | 26m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 69nC @ 10V | 4.5V 10V | ±20V |
