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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDPF52N20T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp52n20-datasheets-3622.pdf | TO-220-3 Full Pack | compliant | NOT SPECIFIED | NOT SPECIFIED | 200V | 38.5W Tc | N-Channel | 2900pF @ 25V | 49m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3515STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 150V | N-Channel | 2260pF @ 25V | 45m Ω @ 25A, 10V | 4.5V @ 250μA | 41A Tc | 107nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N06-3M9H-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sum110n063m9he3-datasheets-6610.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 45 ns | 160ns | 14 ns | 75 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 60V | 3.4V | 3.75W Ta 375W Tc | 440A | 245 mJ | 40V | N-Channel | 15800pF @ 25V | 3.9m Ω @ 30A, 10V | 4.5V @ 250μA | 110A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SUM18N25-165-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum18n25165e3-datasheets-6641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 165MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 130ns | 100 ns | 30 ns | 18A | 20V | SILICON | SWITCHING | 250V | 250V | 3.75W Ta 150W Tc | 20A | N-Channel | 1950pF @ 25V | 165m Ω @ 14A, 10V | 4V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUM50N06-16L-E3 | Vishay Siliconix | $5.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50n0616le3-datasheets-6668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 16mOhm | 3 | No | Single | TO-263 (D2Pak) | 1.325nF | 10 ns | 9ns | 7 ns | 25 ns | 50A | 20V | 60V | 2V | 3.7W Ta 93W Tc | 16mOhm | N-Channel | 1325pF @ 25V | 16mOhm @ 20A, 10V | 3V @ 250μA | 50A Tc | 40nC @ 10V | 16 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| SUM40N10-30-E3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum40n1030e3-datasheets-6651.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | Unknown | 30mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 12ns | 12 ns | 30 ns | 40A | 20V | SILICON | SWITCHING | 100V | 3.75W Ta 107W Tc | 75A | N-Channel | 2400pF @ 25V | 4 V | 30m Ω @ 15A, 10V | 4V @ 250μA | 40A Tc | 60nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| 2SK3565(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | TO-220SIS | 1.15nF | 30ns | 60 ns | 5A | 30V | 900V | 45W Tc | N-Channel | 1150pF @ 25V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 5A Ta | 28nC @ 10V | 2.5 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUM09N20-270-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum09n20270e3-datasheets-6518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 270mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10 ns | 35ns | 40 ns | 25 ns | 9A | 20V | SILICON | 3.75W Ta 60W Tc | 9A | 200V | N-Channel | 580pF @ 25V | 270m Ω @ 5A, 10V | 4V @ 250μA | 9A Tc | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TP0610KL-TR1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-bs250kltr1e3-datasheets-7676.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 4.7mm | 4.7mm | 3.68mm | Lead Free | 453.59237mg | 10Ohm | 3 | 1 | Single | 800mW | 1 | TO-226AA | 2.4 ns | 15.5ns | 15.5 ns | 21 ns | -270mA | 20V | 60V | 800mW Ta | 6Ohm | -60V | P-Channel | 6Ohm @ 500mA, 10V | 3V @ 250μA | 270mA Ta | 3nC @ 15V | 6 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF2804S-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2804s7ppbf-datasheets-6547.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 330W Tc | 160A | 1360A | 0.0016Ohm | 1050 mJ | N-Channel | 6930pF @ 25V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFP17N50L | Vishay Siliconix | $2.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp17n50lpbf-datasheets-2660.pdf | 500V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | Unknown | 3 | 1 | Single | 220W | TO-247-3 | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 320mOhm | 500V | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDMS8692 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8692-datasheets-6556.pdf | 8-PowerTDFN | Lead Free | 68.1mg | 8 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | 3ns | 2 ns | 19 ns | 12A | 20V | 2.5W Ta 41W Tc | 30V | N-Channel | 1265pF @ 15V | 9m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 28A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2995(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2995f-datasheets-6490.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 90W | 1 | 30A | 250V | 90W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum36n2054pe3-datasheets-6502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 3.12W | TO-263 (D2Pak) | 3.1nF | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | 3.12W Ta 166W Tc | 44mOhm | 200V | N-Channel | 3100pF @ 25V | 53mOhm @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 53 mΩ | 10V 15V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2847(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2847f-datasheets-6492.pdf | TO-3P-3, SC-65-3 | 15.9mm | 20mm | 4.8mm | Lead Free | 3 | No | Single | 85W | 1 | 60 ns | 25ns | 20 ns | 30 ns | 8A | 30V | 85W Tc | 900V | N-Channel | 2040pF @ 25V | 1.4 Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2719(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2719f-datasheets-6494.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 125W | 1 | 15ns | 30 ns | 3A | 30V | 900V | 125W Tc | N-Channel | 750pF @ 25V | 4.3 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3127(TE24L,Q) | Toshiba Semiconductor and Storage | $8.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3127te24lq-datasheets-6496.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12mOhm | Single | 65W | TO-220SM | 2.3nF | 12ns | 75 ns | 45A | 30V | 30V | 65W Tc | 12mOhm | 30V | N-Channel | 2300pF @ 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 45A Ta | 66nC @ 10V | 12 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8453LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb8453lz-datasheets-6498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.31247g | 3 | yes | Single | 3.1W | 1 | 6ns | 5 ns | 37 ns | 16.1A | 20V | 3.1W Ta 66W Tc | 40V | N-Channel | 3545pF @ 20V | 7m Ω @ 17.6A, 10V | 3V @ 250μA | 16.1A Ta 50A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2967(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 150W | 1 | 30A | 250V | 150W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6N50FTF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | FDD6N50 | D-Pak | 500V | 89W Tc | N-Channel | 960pF @ 25V | 1.15Ohm @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 19.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3132(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3132q-datasheets-6504.pdf | TO-3PL | Lead Free | 3 | No | Single | 250W | 1 | 160ns | 245 ns | 65 ns | 50A | 30V | 250W Tc | 500V | N-Channel | 11000pF @ 10V | 95m Ω @ 25A, 10V | 3.4V @ 1mA | 50A Ta | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75344A3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf75344a3-datasheets-6506.pdf | TO-3P-3, SC-65-3 | TO-3P | 55V | 288.5W Tc | N-Channel | 4855pF @ 25V | 8mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 208nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2993(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2993te24lq-datasheets-6507.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 250V | 100W Tc | N-Channel | 4000pF @ 10V | 105m Ω @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2917(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2917f-datasheets-6512.pdf | TO-3P-3, SC-65-3 | 500V | 90W Tc | N-Channel | 3720pF @ 10V | 270m Ω @ 10A, 10V | 4V @ 1mA | 18A Ta | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf3704strlpbf-datasheets-2633.pdf | 20V | 77A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 90W | 1 | D2PAK | 1.996nF | 98ns | 77A | 20V | 20V | 87W Tc | 13.5mOhm | 20V | N-Channel | 1996pF @ 10V | 9mOhm @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7433TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 12V | 2.5W Ta | P-Channel | 1877pF @ 10V | 24m Ω @ 8.7A, 4.5V | 900mV @ 250μA | 8.9A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE800DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishay-sie800dft1e3-datasheets-2613.pdf | 10-PolarPAK® (S) | Lead Free | 4 | No SVHC | 7.2mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15ns | 10 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 5.2W Ta 104W Tc | 20.6A | 60A | 80 mJ | 30V | N-Channel | 1600pF @ 15V | 7.2m Ω @ 11A, 10V | 3V @ 250μA | 50A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7483ADP-T1-E3 | Vishay Siliconix | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7483adpt1ge3-datasheets-2953.pdf | PowerPAK® SO-8 | Lead Free | 5 | 5.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 22 ns | 33ns | 130 ns | 210 ns | -24A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | P-Channel | 5.7m Ω @ 24A, 10V | 3V @ 250μA | 14A Ta | 180nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIE830DF-T1-E3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie830dft1e3-datasheets-6381.pdf | 10-PolarPAK® (S) | 5 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-N5 | 35 ns | 105ns | 95 ns | 70 ns | 50A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 27A | 80A | 0.0042Ohm | 45 mJ | 30V | N-Channel | 5500pF @ 15V | 4.2m Ω @ 16A, 10V | 2V @ 250μA | 50A Tc | 115nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| SIE832DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie832dft1e3-datasheets-6384.pdf | 10-PolarPAK® (S) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | No SVHC | 5.5mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 45 ns | 260ns | 55 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 5.2W Ta 104W Tc | 23.6A | 80A | 40V | N-Channel | 3800pF @ 20V | 5.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 77nC @ 10V | 4.5V 10V | ±20V |
