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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SK3565(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | Copper, Silver, Tin | No | TO-220SIS | 1.15nF | 30ns | 60 ns | 5A | 30V | 900V | 45W Tc | N-Channel | 1150pF @ 25V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 5A Ta | 28nC @ 10V | 2.5 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8660AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/onsemiconductor-fdms8660as-datasheets-6675.pdf | 8-PowerTDFN | Lead Free | 68.1mg | 2.1MOhm | 8 | yes | Single | 2.5W | 1 | 8ns | 5 ns | 42 ns | 28A | 20V | 2.5W Ta 104W Tc | 30V | N-Channel | 5865pF @ 15V | 2.1m Ω @ 28A, 10V | 3V @ 1mA | 28A Ta 49A Tc | 83nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM23N15-73-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum23n1573e3-datasheets-6634.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | Unknown | 73mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 60ns | 45 ns | 30 ns | 23A | 20V | SILICON | SWITCHING | 4V | 3.75W Ta 100W Tc | 150V | N-Channel | 1290pF @ 25V | 4 V | 73m Ω @ 15A, 10V | 4V @ 250μA | 23A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDI8442 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdi8442-datasheets-6706.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 254W Tc | N-Channel | 12200pF @ 25V | 2.9m Ω @ 80A, 10V | 4V @ 250μA | 23A Ta 80A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM47N10-24L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum47n1024le3-datasheets-6710.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 3.75W | 1 | TO-263 (D2Pak) | 2.4nF | 40ns | 80 ns | 15 ns | 47A | 20V | 100V | 3.75W Ta 136W Tc | 21mOhm | 100V | N-Channel | 2400pF @ 25V | 24mOhm @ 40A, 10V | 3V @ 250μA | 47A Tc | 60nC @ 10V | 24 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIB412DK-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib412dkt1e3-datasheets-6377.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | 95.991485mg | 34mOhm | 1 | Single | PowerPAK® SC-75-6L Single | 535pF | 6.6 ns | 16ns | 14 ns | 50 ns | 9A | 8V | 20V | 2.4W Ta 13W Tc | 34mOhm | 20V | N-Channel | 535pF @ 10V | 34mOhm @ 6.6A, 4.5V | 1V @ 250μA | 9A Tc | 10.16nC @ 5V | 34 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7603TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7603trpbf-datasheets-6531.pdf | 30V | 5.6A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | 8 | Single | 1.8W | 1 | Micro8™ | 520pF | 5.7 ns | 28ns | 12 ns | 18 ns | 5.6A | 20V | 30V | 1.8W Ta | 35mOhm | 30V | N-Channel | 520pF @ 25V | 35mOhm @ 3.7A, 10V | 1V @ 250μA | 5.6A Ta | 27nC @ 10V | 35 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK3127(TE24L,Q) | Toshiba Semiconductor and Storage | $8.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3127te24lq-datasheets-6496.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12mOhm | Single | 65W | TO-220SM | 2.3nF | 12ns | 75 ns | 45A | 30V | 30V | 65W Tc | 12mOhm | 30V | N-Channel | 2300pF @ 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 45A Ta | 66nC @ 10V | 12 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8453LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb8453lz-datasheets-6498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1.31247g | 3 | yes | Single | 3.1W | 1 | 6ns | 5 ns | 37 ns | 16.1A | 20V | 3.1W Ta 66W Tc | 40V | N-Channel | 3545pF @ 20V | 7m Ω @ 17.6A, 10V | 3V @ 250μA | 16.1A Ta 50A Tc | 66nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2967(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 150W | 1 | 30A | 250V | 150W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6N50FTF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | FDD6N50 | D-Pak | 500V | 89W Tc | N-Channel | 960pF @ 25V | 1.15Ohm @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 19.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3132(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3132q-datasheets-6504.pdf | TO-3PL | Lead Free | 3 | No | Single | 250W | 1 | 160ns | 245 ns | 65 ns | 50A | 30V | 250W Tc | 500V | N-Channel | 11000pF @ 10V | 95m Ω @ 25A, 10V | 3.4V @ 1mA | 50A Ta | 280nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75344A3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf75344a3-datasheets-6506.pdf | TO-3P-3, SC-65-3 | TO-3P | 55V | 288.5W Tc | N-Channel | 4855pF @ 25V | 8mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 208nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2993(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2993te24lq-datasheets-6507.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 250V | 100W Tc | N-Channel | 4000pF @ 10V | 105m Ω @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2917(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2917f-datasheets-6512.pdf | TO-3P-3, SC-65-3 | 500V | 90W Tc | N-Channel | 3720pF @ 10V | 270m Ω @ 10A, 10V | 4V @ 1mA | 18A Ta | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf3704strlpbf-datasheets-2633.pdf | 20V | 77A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 90W | 1 | D2PAK | 1.996nF | 98ns | 77A | 20V | 20V | 87W Tc | 13.5mOhm | 20V | N-Channel | 1996pF @ 10V | 9mOhm @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUM09N20-270-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum09n20270e3-datasheets-6518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 270mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10 ns | 35ns | 40 ns | 25 ns | 9A | 20V | SILICON | 3.75W Ta 60W Tc | 9A | 200V | N-Channel | 580pF @ 25V | 270m Ω @ 5A, 10V | 4V @ 250μA | 9A Tc | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TP0610KL-TR1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-bs250kltr1e3-datasheets-7676.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 4.7mm | 4.7mm | 3.68mm | Lead Free | 453.59237mg | 10Ohm | 3 | 1 | Single | 800mW | 1 | TO-226AA | 2.4 ns | 15.5ns | 15.5 ns | 21 ns | -270mA | 20V | 60V | 800mW Ta | 6Ohm | -60V | P-Channel | 6Ohm @ 500mA, 10V | 3V @ 250μA | 270mA Ta | 3nC @ 15V | 6 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF2804S-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2804s7ppbf-datasheets-6547.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 330W Tc | 160A | 1360A | 0.0016Ohm | 1050 mJ | N-Channel | 6930pF @ 25V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP17N50L | Vishay Siliconix | $2.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp17n50lpbf-datasheets-2660.pdf | 500V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | Unknown | 3 | 1 | Single | 220W | TO-247-3 | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 320mOhm | 500V | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FDMS8692 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8692-datasheets-6556.pdf | 8-PowerTDFN | Lead Free | 68.1mg | 8 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | 3ns | 2 ns | 19 ns | 12A | 20V | 2.5W Ta 41W Tc | 30V | N-Channel | 1265pF @ 15V | 9m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 28A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2995(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2995f-datasheets-6490.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 90W | 1 | 30A | 250V | 90W Tc | N-Channel | 5400pF @ 10V | 68m Ω @ 15A, 10V | 3.5V @ 1mA | 30A Ta | 132nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum36n2054pe3-datasheets-6502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 3.12W | TO-263 (D2Pak) | 3.1nF | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | 3.12W Ta 166W Tc | 44mOhm | 200V | N-Channel | 3100pF @ 25V | 53mOhm @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 53 mΩ | 10V 15V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2847(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2847f-datasheets-6492.pdf | TO-3P-3, SC-65-3 | 15.9mm | 20mm | 4.8mm | Lead Free | 3 | No | Single | 85W | 1 | 60 ns | 25ns | 20 ns | 30 ns | 8A | 30V | 85W Tc | 900V | N-Channel | 2040pF @ 25V | 1.4 Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2719(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2719f-datasheets-6494.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 125W | 1 | 15ns | 30 ns | 3A | 30V | 900V | 125W Tc | N-Channel | 750pF @ 25V | 4.3 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE806DF-T1-E3 | Vishay Siliconix | $11.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie806dft1e3-datasheets-6367.pdf | 10-PolarPAK® (L) | Lead Free | 4 | No SVHC | 1.7mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 50ns | 10 ns | 85 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | 1.3V | 5.2W Ta 125W Tc | 202A | 30V | N-Channel | 13000pF @ 15V | 1.7m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 250nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SIA450DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia450djt1e3-datasheets-6346.pdf | PowerPAK® SC-70-6 | 3 | 6 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | Single | 40 | 15W | 1 | Not Qualified | S-XDSO-F3 | 22ns | 19 ns | 23 ns | 1.52A | 20V | SILICON | DRAIN | SWITCHING | 3.3W Ta 15W Tc | 1.5A | 240V | N-Channel | 167pF @ 120V | 40.5ns | 23.25ns | 2.9 Ω @ 700mA, 10V | 2.4V @ 250μA | 1.52A Tc | 7.04nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDFS2P753AZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfs2p753az-datasheets-6404.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 3.1W Ta | P-Channel | 455pF @ 15V | 115mOhm @ 3A, 10V | 3V @ 250μA | 3A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811WTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7811wtr-datasheets-6430.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | N-Channel | 2335pF @ 16V | 12m Ω @ 15A, 4.5V | 1V @ 250μA | 14A Ta | 33nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0201K-T1-E3 | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn0201kt1e3-datasheets-6409.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 1.4Ohm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Powers | 4.5 ns | 8ns | 8 ns | 9 ns | 420mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.42A | 20V | N-Channel | 1 V | 1 Ω @ 300mA, 10V | 3V @ 250μA | 420mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V |
