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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDFS2P753AZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfs2p753az-datasheets-6404.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 3.1W Ta | P-Channel | 455pF @ 15V | 115mOhm @ 3A, 10V | 3V @ 250μA | 3A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811WTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7811wtr-datasheets-6430.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | N-Channel | 2335pF @ 16V | 12m Ω @ 15A, 4.5V | 1V @ 250μA | 14A Ta | 33nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0201K-T1-E3 | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn0201kt1e3-datasheets-6409.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 1.4Ohm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Powers | 4.5 ns | 8ns | 8 ns | 9 ns | 420mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.42A | 20V | N-Channel | 1 V | 1 Ω @ 300mA, 10V | 3V @ 250μA | 420mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TP0202K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-tp0202kt1e3-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 3.5Ohm | 3 | yes | EAR99 | No | 4A | e3 | Matte Tin (Sn) | 20V | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | Other Transistors | 9 ns | 6ns | 6 ns | 30 ns | -385A | 20V | SILICON | SWITCHING | 30V | -2V | 350mW Ta | P-Channel | 31pF @ 15V | -1.3 V | 1.4 Ω @ 500mA, 10V | 3V @ 250μA | 385mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TP0101K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-tp0101kt1e3-datasheets-6443.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | No SVHC | 650mOhm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 350mW | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | Other Transistors | 25 ns | 30ns | 30 ns | 55 ns | -580mA | 8V | SWITCHING | 20V | 700mV | 0.58A | -20V | P-Channel | -700 mV | 650m Ω @ 580mA, 4.5V | 1V @ 50μA | 2.2nC @ 4.5V | ||||||||||||||||||||||||||||||||||
| IRFU5410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr5410tr-datasheets-4735.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7241TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 2.5W Ta | MS-012AA | 6.2A | P-Channel | 3220pF @ 25V | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 6.2A Ta | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7433TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 12V | 2.5W Ta | P-Channel | 1877pF @ 10V | 24m Ω @ 8.7A, 4.5V | 900mV @ 250μA | 8.9A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE800DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishay-sie800dft1e3-datasheets-2613.pdf | 10-PolarPAK® (S) | Lead Free | 4 | No SVHC | 7.2mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 15ns | 10 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 5.2W Ta 104W Tc | 20.6A | 60A | 80 mJ | 30V | N-Channel | 1600pF @ 15V | 7.2m Ω @ 11A, 10V | 3V @ 250μA | 50A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIE820DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie820dft1ge3-datasheets-4394.pdf | 10-PolarPAK® (S) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-N4 | 35ns | 10 ns | 55 ns | 50A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 5.2W Ta 104W Tc | 136A | 80A | 0.0035Ohm | 45 mJ | N-Channel | 4300pF @ 10V | 3.5m Ω @ 18A, 4.5V | 2V @ 250μA | 50A Tc | 143nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI8405DB-T1-E1 | Vishay Siliconix | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8405dbt1e1-datasheets-6204.pdf | 4-XFBGA, CSPBGA | 4 | No | Single | 1.47W | 4-Microfoot | 16 ns | 32ns | 32 ns | 120 ns | 3.6A | 8V | 12V | 1.47W Ta | 55mOhm | -12V | P-Channel | 55mOhm @ 1A, 4.5V | 950mV @ 250μA | 3.6A Ta | 21nC @ 4.5V | 55 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA810DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia810djt1ge3-datasheets-4651.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 28.009329mg | 53mOhm | EAR99 | e3 | MATTE TIN | C BEND | NOT SPECIFIED | 6 | 1 | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-C6 | 5 ns | 32ns | 32 ns | 30 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.9W Ta 6.5W Tc | 20A | N-Channel | 400pF @ 10V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 4.5A Tc | 11.5nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI9424BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9424bdyt1e3-datasheets-6263.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 25MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 2W | 1 | Other Transistors | 30 ns | 40ns | 40 ns | 130 ns | -7.1A | 9V | SILICON | 1.25W Ta | 5.6A | 20V | P-Channel | 25m Ω @ 7.1A, 4.5V | 850mV @ 250μA | 5.6A Ta | 40nC @ 4.5V | 2.5V 4.5V | ±9V | |||||||||||||||||||||||||||||||||||||
| SI7344DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7344dpt1e3-datasheets-6107.pdf | PowerPAK® SO-8 | 8 | Single | 1.8W | PowerPAK® SO-8 | 15ns | 15 ns | 40 ns | 11A | 20V | 20V | 1.8W Ta | 8mOhm | 20V | N-Channel | 8mOhm @ 17A, 10V | 2.1V @ 250μA | 11A Ta | 15nC @ 4.5V | 8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8402DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si8402dbt1e1-datasheets-6269.pdf | 4-XFBGA, CSPBGA | 1.5748mm | 355.6μm | 1.6002mm | Lead Free | 4 | 37MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.47W | BOTTOM | BALL | 260 | 4 | Single | 40 | 1.47W | 1 | FET General Purpose Power | 30 ns | 145ns | 145 ns | 45 ns | 7.3A | 8V | SWITCHING | 5.3A | 20V | N-Channel | 37m Ω @ 1A, 4.5V | 1V @ 250μA | 5.3A Ta | 26nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||
| SI8415DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8415dbt1e1-datasheets-6296.pdf | 4-XFBGA, CSPBGA | 4 | No SVHC | 4 | yes | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 40 | 1.47W | 1 | Other Transistors | 15 ns | 32ns | 32 ns | 180 ns | -7.3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | -1V | 1.47W Ta | 5.3A | 25A | 0.037Ohm | P-Channel | 37m Ω @ 1A, 4.5V | 1V @ 250μA | 5.3A Ta | 30nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI9434BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9434bdyt1e3-datasheets-6300.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.3W | 1 | 15 ns | 45ns | 45 ns | 80 ns | -6.3A | 8V | SILICON | 20V | 20V | 1.3W Ta | 4.5A | 20A | P-Channel | 40m Ω @ 6.3A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SIB411DK-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib411dkt1e3-datasheets-6312.pdf | PowerPAK® SC-75-6L | 6 | Single | 2.4W | 1 | PowerPAK® SC-75-6L Single | 470pF | 10ns | 10 ns | 25 ns | 4.8A | 8V | 20V | 2.4W Ta 13W Tc | 66mOhm | P-Channel | 470pF @ 10V | 66mOhm @ 3.3A, 4.5V | 1V @ 250μA | 9A Tc | 15nC @ 8V | 66 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2405trr-datasheets-5970.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 30A | 220A | 0.016Ohm | 130 mJ | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIA811DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia811djt1e3-datasheets-6329.pdf | PowerPAK® SC-70-6 Dual | 94mOhm | Single | PowerPAK® SC-70-6 Dual | 355pF | 5 ns | 10ns | 10 ns | 20 ns | 4.5A | 8V | 20V | 1.9W Ta 6.5W Tc | 94mOhm | -20V | P-Channel | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 13nC @ 8V | Schottky Diode (Isolated) | 94 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7476DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7476dpt1e3-datasheets-6287.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | Unknown | 5.3mOhm | 8 | 1 | Single | PowerPAK® SO-8 | 30 ns | 22ns | 22 ns | 130 ns | 25A | 20V | 40V | 1.9W Ta | 5.3mOhm | N-Channel | 1 V | 5.3mOhm @ 25A, 10V | 3V @ 250μA | 15A Ta | 177nC @ 10V | 5.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TN0200K-T1-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn0200kt1e3-datasheets-6356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 3.05mm | Lead Free | 3 | Unknown | 400mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 12A | e3 | 20V | 350mW | DUAL | GULL WING | 260 | 3 | Single | 30 | 350mW | 1 | FET General Purpose Power | 17 ns | 20ns | 20 ns | 55 ns | 730mA | 8V | SWITCHING | 600mV | 20V | N-Channel | 600 mV | 400m Ω @ 600mA, 4.5V | 1V @ 50μA | 2nC @ 4.5V | ||||||||||||||||||||||||||||||||
| SIE822DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 15 Weeks | No SVHC | 5.5MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 15 ns | 25ns | 10 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 104W Tc | 80A | 45 mJ | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFBA1404 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-273AA | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 212A | 650A | 0.0035Ohm | 2000 mJ | N-Channel | 7360pF @ 25V | 3.7m Ω @ 95A, 10V | 4V @ 250μA | 206A Ta | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8404DB-T1-E1 | Vishay Siliconix | $3.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8404dbt1e1-datasheets-6187.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | 1 | Single | 2.78W | 1 | 4-Microfoot | 1.95nF | 8 ns | 12ns | 40 ns | 110 ns | 8.1A | 5V | 8V | 2.78W Ta 6.25W Tc | 31mOhm | 8V | N-Channel | 1950pF @ 4V | 31mOhm @ 1A, 4.5V | 1V @ 250μA | 12.2A Tc | 33nC @ 5V | 31 mΩ | 1.8V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7866ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7866adpt1e3-datasheets-6244.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.0038mm | Lead Free | 5 | 506.605978mg | 2.4mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 105ns | 9 ns | 49 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 35A | 70A | N-Channel | 5415pF @ 10V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI8424DB-T1-E1 | Vishay Siliconix | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8424dbt1e1-datasheets-6198.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | Unknown | 31MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | UNSPECIFIED | 260 | 4 | 40 | 2.78W | 1 | FET General Purpose Power | 8 ns | 12ns | 40 ns | 110 ns | 1.3A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | 1V | 2.78W Ta 6.25W Tc | 20A | 8V | N-Channel | 1950pF @ 4V | 1 V | 31m Ω @ 1A, 4.5V | 1V @ 250μA | 12.2A Tc | 33nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||
| SIA443DJ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia443djt1e3-datasheets-6259.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 45mOhm | 1 | Single | PowerPAK® SC-70-6 Single | 750pF | 5 ns | 15ns | 75 ns | 35 ns | 9A | 8V | 20V | 3.3W Ta 15W Tc | 45mOhm | -20V | P-Channel | 750pF @ 10V | 45mOhm @ 4.7A, 4.5V | 1V @ 250μA | 9A Tc | 25nC @ 8V | 45 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7413DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7413dnt1e3-datasheets-6150.pdf | PowerPAK® 1212-8 | Lead Free | 5 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 50ns | 50 ns | 200 ns | -13.2A | 8V | SILICON | DRAIN | SWITCHING | -1V | 1.5W Ta | 30A | 20V | P-Channel | 15m Ω @ 13.2A, 4.5V | 1V @ 400μA | 8.4A Ta | 51nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI7491DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7491dpt1e3-datasheets-6165.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 8.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | Other Transistors | R-XDSO-C5 | 150 ns | 190ns | 190 ns | 120 ns | -18A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 1.8W Ta | 50A | -30V | P-Channel | -3 V | 8.5m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 85nC @ 5V | 4.5V 10V | ±20V |
