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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Switching Frequency | Power Dissipation-Max | JEDEC-95 Code | Max Duty Cycle | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7485DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7485dpt1ge3-datasheets-2943.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 7.3mOhm | 8 | yes | EAR99 | No | 20A | e3 | Matte Tin (Sn) | 20V | 1.8W | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | Other Transistors | R-XDSO-C5 | 80 ns | 140ns | 170 ns | 360 ns | -20A | 8V | DRAIN | SWITCHING | -900mV | 20V | P-Channel | -900 mV | 7.3m Ω @ 20A, 4.5V | 900mV @ 1mA | 12.5A Ta | 150nC @ 5V | ||||||||||||||||||||||||||||||||||||||
| SI7462DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7462dpt1e3-datasheets-6195.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 5 | 130mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.9W | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 15 ns | 40 ns | 4.1A | 20V | DRAIN | SWITCHING | 2.6A | 200V | N-Channel | 130m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A Ta | 30nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| IRF7822TRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf7822trl-datasheets-6001.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 5.5nF | 18A | 30V | 3.1W Ta | N-Channel | 5500pF @ 16V | 6.5mOhm @ 15A, 4.5V | 1V @ 250μA | 18A Ta | 60nC @ 5V | 6.5 mΩ | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7802DN-T1-E3 | Vishay Siliconix | $3.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7802dnt1e3-datasheets-6209.pdf | PowerPAK® 1212-8 | Lead Free | No SVHC | 435MOhm | 8 | No | Single | 1.5W | 1 | PowerPAK® 1212-8 | 10 ns | 10ns | 10 ns | 21 ns | 19.5A | 20V | 250V | 3.6V | 1.5W Ta | 435mOhm | 250V | N-Channel | 435mOhm @ 1.95A, 10V | 3.6V @ 250μA | 1.24A Ta | 21nC @ 10V | 435 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI8407DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8407dbt2e1-datasheets-6218.pdf | 6-MICRO FOOT®CSP | 2.3876mm | 355.6μm | 2.0066mm | Lead Free | 6 | 27mOhm | 6 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 6 | Single | 40 | 1.47W | 1 | Other Transistors | 30 ns | 45ns | 45 ns | 520 ns | -8.2A | 8V | SILICON | SWITCHING | 20V | 1.47W Ta | 5.8A | -20V | P-Channel | 27m Ω @ 1A, 4.5V | 900mV @ 350μA | 5.8A Ta | 50nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7409ADN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7409adnt1e3-datasheets-6098.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 19mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 50ns | 50 ns | 115 ns | -11A | 12V | SILICON | DRAIN | SWITCHING | 30V | 1.5W Ta | 7A | 40A | -30V | P-Channel | 19m Ω @ 11A, 4.5V | 1.5V @ 250μA | 7A Ta | 40nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRF7465 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 1.9A | 0.28Ohm | N-Channel | 330pF @ 25V | 280m Ω @ 1.14A, 10V | 5.5V @ 250μA | 1.9A Ta | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7403BDN-T1-E3 | Vishay Siliconix | $8.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7403bdnt1e3-datasheets-6135.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 5 ns | 51ns | 60 ns | 33 ns | -8A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.1W Ta 9.6W Tc | 20A | 0.074Ohm | -20V | P-Channel | 430pF @ 10V | 74m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 15nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7366DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7366dpt1ge3-datasheets-2897.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.7W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 16ns | 16 ns | 58 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1.7W Ta | 50A | 0.0055Ohm | 20V | N-Channel | 5.5m Ω @ 20A, 10V | 3V @ 250μA | 13A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI6463BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6463bdqt1ge3-datasheets-2888.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | 8 | 15mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.05W | 1 | Other Transistors | 35 ns | 40ns | 40 ns | 190 ns | -7.4A | 8V | 20V | 6.2A | -20V | P-Channel | 15m Ω @ 7.4A, 4.5V | 800mV @ 250μA | 6.2A Ta | 60nC @ 5V | |||||||||||||||||||||||||||||||||||||||||
| SI7448DP-T1-E3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7448dpt1e3-datasheets-6153.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 6.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 750mA | 22 ns | 22ns | 22 ns | 125 ns | 13.4A | 12V | SILICON | DRAIN | SWITCHING | 52kHz | 1.9W Ta | 100 % | 50A | 20V | N-Channel | 600 mV | 6.5m Ω @ 22A, 4.5V | 1.5V @ 250μA | 13.4A Ta | 50nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||
| SI7459DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7459dpt1ge3-datasheets-2901.pdf | PowerPAK® SO-8 | Lead Free | 5 | No SVHC | 6.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 180 ns | -22A | 25V | SILICON | DRAIN | SWITCHING | 30V | -3V | 1.9W Ta | 60A | -30V | P-Channel | 6.8m Ω @ 22A, 10V | 3V @ 250μA | 13A Ta | 170nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SI7848DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7848dpt1e3-datasheets-6148.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | 8 | 1 | Single | 1.83W | 1 | PowerPAK® SO-8 | 15 ns | 10ns | 10 ns | 50 ns | 10.4A | 20V | 40V | 1.83W Ta | 12mOhm | 40V | N-Channel | 9mOhm @ 14A, 10V | 3V @ 250μA | 10.4A Ta | 28nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1704 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~200°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-220-3 | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 230W Tc | TO-220AB | 75A | 680A | 0.004Ohm | 670 mJ | N-Channel | 6950pF @ 25V | 4m Ω @ 100A, 10V | 4V @ 250μA | 170A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7805atr-datasheets-5907.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.1W Ta 120W Tc | N-Channel | 2672pF @ 16V | 9mOhm @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7138DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7138dpt1e3-datasheets-6038.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 12ns | 8 ns | 50 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 93 mJ | 60V | N-Channel | 6900pF @ 30V | 2 V | 7.8m Ω @ 19.7A, 10V | 4V @ 250μA | 30A Tc | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7382DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7382dpt1e3-datasheets-6112.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 8 | 506.605978mg | 4.7mOhm | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | NO LEAD | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N8 | 18 ns | 16ns | 16 ns | 67 ns | 14A | 20V | SILICON | 30V | 1.8W Ta | 24A | 50A | 45 mJ | N-Channel | 4.7m Ω @ 24A, 10V | 3V @ 250μA | 14A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7136DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7136dpt1e3-datasheets-6027.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 3.2mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 19 ns | 42ns | 9 ns | 37 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 39W Tc | 29.5A | 70A | 45 mJ | N-Channel | 3380pF @ 10V | 1 V | 3.2m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7411DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7411dnt1ge3-datasheets-2892.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 19MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 23 ns | 45ns | 45 ns | 135 ns | 7.5A | 8V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 30A | 20V | P-Channel | 19m Ω @ 11.4A, 4.5V | 1V @ 300μA | 7.5A Ta | 41nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI7384DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7384dpt1e3-datasheets-6127.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 8 | 506.605978mg | 8.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.8W | 1 | FET General Purpose Power | 10 ns | 13ns | 13 ns | 45 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 32 mJ | 30V | N-Channel | 8.5m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI6467BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6467bdqt1e3-datasheets-6035.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | Unknown | 12.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.05W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 85ns | 85 ns | 220 ns | 6.8A | 8V | 450mV | 12V | P-Channel | 12.5m Ω @ 8A, 4.5V | 850mV @ 450μA | 6.8A Ta | 70nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR13N15DTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | /files/infineontechnologies-irfu13n15d-datasheets-1189.pdf | 150V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 86W Tc | TO-252AA | 56A | 0.18Ohm | 130 mJ | N-Channel | 620pF @ 25V | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 14A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SI7107DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7107dnt1ge3-datasheets-2911.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | Unknown | 10.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 27 ns | 55ns | 55 ns | 270 ns | -15.3A | 8V | SILICON | DRAIN | SWITCHING | -1V | 1.5W Ta | 40A | 20V | P-Channel | 10.8m Ω @ 15.3A, 4.5V | 1V @ 450μA | 9.8A Ta | 44nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI6459BDQ-T1-E3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6459bdqt1ge3-datasheets-2841.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1W | 1 | Not Qualified | 10 ns | 15ns | 15 ns | 50 ns | 2.2A | 20V | SILICON | 60V | 60V | 1W Ta | P-Channel | 115m Ω @ 2.7A, 10V | 3V @ 250μA | 2.2A Ta | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFPS43N50K | Vishay Siliconix | $4.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps43n50k-datasheets-6058.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | 38.000013g | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 8.31nF | 25 ns | 140ns | 74 ns | 55 ns | 47A | 30V | 500V | 540W Tc | 90mOhm | N-Channel | 8310pF @ 25V | 90mOhm @ 28A, 10V | 5V @ 250μA | 47A Tc | 350nC @ 10V | 90 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5805TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 Thin, TSOT-23-6 | EAR99 | e3 | Matte Tin (Sn) | YES | Other Transistors | Single | 30V | 2W Ta | 3.8A | P-Channel | 511pF @ 25V | 98m Ω @ 3.8A, 10V | 2.5V @ 250μA | 3.8A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7100DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7100dnt1e3-datasheets-6067.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 14 ns | 52ns | 8 ns | 53 ns | 26.1A | 8V | SILICON | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 35A | 60A | 0.0035Ohm | 8V | N-Channel | 3810pF @ 4V | 3.5m Ω @ 15A, 4.5V | 1V @ 250μA | 35A Tc | 105nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI6435ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6435adqt1ge3-datasheets-2846.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | 8 | No SVHC | 30mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | 12 ns | 10ns | 10 ns | 42 ns | 4.7A | 20V | -30V | 30V | -1V | -30V | P-Channel | -1 V | 30m Ω @ 5.5A, 10V | 1V @ 250μA (Min) | 4.7A Ta | 20nC @ 5V | ||||||||||||||||||||||||||||||||||||||
| SI5856DC-T1-E3 | Vishay Siliconix | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5856dct1e3-datasheets-5974.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | ULTRA-LOW RESISTANCE | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.1W | 1 | Not Qualified | 36ns | 36 ns | 30 ns | 5.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 4.4A | 0.04Ohm | 20V | N-Channel | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 4.4A Ta | 7.5nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V |
